CN106840476A - The three-dimensional quick sensing element of carbon nanomaterial field-effect flexible force and preparation method - Google Patents
The three-dimensional quick sensing element of carbon nanomaterial field-effect flexible force and preparation method Download PDFInfo
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- CN106840476A CN106840476A CN201710062972.7A CN201710062972A CN106840476A CN 106840476 A CN106840476 A CN 106840476A CN 201710062972 A CN201710062972 A CN 201710062972A CN 106840476 A CN106840476 A CN 106840476A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 100
- 230000009975 flexible effect Effects 0.000 title claims abstract description 41
- 230000005669 field effect Effects 0.000 title claims abstract description 21
- 229910052799 carbon Inorganic materials 0.000 title claims description 44
- 239000002086 nanomaterial Substances 0.000 title claims description 37
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 45
- 229920001971 elastomer Polymers 0.000 claims abstract description 23
- 239000000806 elastomer Substances 0.000 claims abstract description 23
- 238000005259 measurement Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 69
- 229910052802 copper Inorganic materials 0.000 claims description 69
- 239000010949 copper Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 64
- 239000010408 film Substances 0.000 claims description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000012528 membrane Substances 0.000 claims description 20
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 18
- 239000002070 nanowire Substances 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000000084 colloidal system Substances 0.000 claims description 16
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 13
- 229910000831 Steel Inorganic materials 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 13
- -1 graphite alkene Chemical class 0.000 claims description 13
- 239000010959 steel Substances 0.000 claims description 13
- 239000004433 Thermoplastic polyurethane Substances 0.000 claims description 12
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- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 229920002803 thermoplastic polyurethane Polymers 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 11
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 10
- 239000007864 aqueous solution Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
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- 239000004332 silver Substances 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 9
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 8
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- 239000010409 thin film Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 6
- 239000000908 ammonium hydroxide Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000004070 electrodeposition Methods 0.000 claims description 6
- 230000003628 erosive effect Effects 0.000 claims description 6
- 150000002148 esters Chemical class 0.000 claims description 6
- 239000002608 ionic liquid Substances 0.000 claims description 6
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- IBZJNLWLRUHZIX-UHFFFAOYSA-N 1-ethyl-3-methyl-2h-imidazole Chemical class CCN1CN(C)C=C1 IBZJNLWLRUHZIX-UHFFFAOYSA-N 0.000 claims description 5
- 229920001577 copolymer Polymers 0.000 claims description 5
- 239000010977 jade Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 229920002725 thermoplastic elastomer Polymers 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
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- 239000007792 gaseous phase Substances 0.000 claims description 4
- 229910021392 nanocarbon Inorganic materials 0.000 claims description 4
- 238000010583 slow cooling Methods 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 238000010792 warming Methods 0.000 claims description 4
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 3
- 239000003792 electrolyte Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 claims description 3
- 239000012047 saturated solution Substances 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 239000002238 carbon nanotube film Substances 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 238000007711 solidification Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims description 2
- 229920001169 thermoplastic Polymers 0.000 claims description 2
- 239000004416 thermosoftening plastic Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 3
- 240000007594 Oryza sativa Species 0.000 claims 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 13
- 239000002041 carbon nanotube Substances 0.000 abstract description 9
- 229910021393 carbon nanotube Inorganic materials 0.000 abstract description 9
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- 241000209094 Oryza Species 0.000 description 8
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- 238000000576 coating method Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920003225 polyurethane elastomer Polymers 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 206010013786 Dry skin Diseases 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- 238000005660 chlorination reaction Methods 0.000 description 1
- JRJUCFIOBFDDBP-UHFFFAOYSA-N chlorobenzene 2-methylprop-2-enoic acid Chemical compound ClC1=CC=CC=C1.C(C(=C)C)(=O)O JRJUCFIOBFDDBP-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/08—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor
Abstract
The present invention relates to design and preparation method that a class is based on the quick sensing element of the flexible force of continuous three-dimensional grapheme or carbon nanotube field-effect structure.The sensing element is changed using the field-effect conductance of elastomeric edges pricker bar belt surface Graphene or CNT under constant grid potential is covered in, design grid is the planar flexible electrode for being covered in Graphene or CNT pyramid band or array top, grid is to causing that source drain channel area increases under pyramid compressive deformation, and field-effect conductance increases, element is presented deformation or load sensitivity very high.By designing strip width, array density, base elastomer body elasticity modulus of materials, load measurement scope 0 to the quick sensing element of power of different sensitivity in the range of 3MPa can be obtained, and the quick sense film of power for being prepared into transparency higher than 80%, bending curvature less than 3 millimeters can be designed.
Description
Technical field
The invention belongs to electronic information field, more particularly to a quick sensing element of class carbon nanomaterial flexible force and preparation side
Method.
Background technology
The quick sensing element of flexible force is widely used in various fields, for example, be used for complex-curved surface in robot field
The touch sensor that contact load is perceived, biomedical sector body surface tension force or antiotasis sensor, and presentation of information neck
Quick touch-screen of domain power etc., is matrix by using polymeric material, and load is obtained with sensing physical quantity with different sensing principles
Corresponding relation.The practical quick sensing element of flexible force is substantially thin polymeric piezoelectric material Kynoar (PVDF) at present
Film, due to weak output signal, it is necessary to carry out preposition amplification to signal, therefore noise is smaller for such force sensing element, to ambient noise
Suppression there are certain requirements, and because piezo-electric effect has larger relaxation property, have larger uncertainty to the quantitative measurment of load.Closely
Nian Lai, many scholar's research prepare flexible force quick sensing element using various nano materials, for example, prepared using CNT
Resistance-type drawing, the quick sensing element of pressure, zinc oxide nanowire prepare the quick sensing element of piezoelectric type nanometer power, micrometer structure surface electricity
Appearance formula or the quick sensing element of field-effect tubular type power etc..
Graphene is used as a kind of two-dimensional material, the electrical properties with many brilliances, its high carrier mobility and low temperature
Degree sensitiveness causes that Graphene is used for various fieldtrons, and because Graphene has outstanding bending flexible and visible
Optical clarity, therefore using the flexible and field-effect characteristic of Graphene, the quick sensing element of power is designed, use other principles with Billy
Sensitivity higher and signal to noise ratio, it is possible to obtain the transparency higher, possess the condition for being applied to various flexible force sensing elements.
It is the flexible structure of field-effect sensitive material with Graphene, attempts in recent years using organic ion colloid dielectric material conduct
Dielectric layer, because this kind of organic ion colloid dielectric material has very big dielectric constant, can cause graphene field effect unit
Part works under relatively low grid voltage, preferably avoids the dielectric layer caused due to high gate voltage and deformation from puncturing or leak electricity, it is ensured that field
Field effect transistor devices can work under multiple deformation.
The CNT scene effect on-off ratio of semi-conductor type, deformation stability, chemical stability aspect and Graphene phase
Than there is certain superiority.Field-effect force-sensing sensor is prepared using semiconductor type carbon nano-tube, with the spirit higher than Graphene
Sensitivity and deformation stability, it is ensured that FET device has high duplication under multiple deformation.Semi-conductor type carbon nanometer
The separation and preparation technology of pipe has Physical and chemical method, and the metal and semi-conductor type that can be prepared from batch chemical vapor deposition are mixed
Semiconductor type carbon nano-tube is isolated in compound.
Present invention pyramid band minus structure on three-dimensional Copper substrate by design, uses chemical gaseous phase depositing process thereon
The controllable Graphene single or multiple lift film of thickness is prepared, then elastomer eurymeric surface is transferred graphene to transfer method, or directly
Elastomer eurymeric surface coating semiconductor type CNT is connected on, with silver or copper nano-wire as source, drain conducting electrodes, to cover
It is dielectric layer in the Ionic colloid of Graphene or carbon nano tube surface, to be covered in CNT, the silver of polymeric film surface
Nano wire or copper nano-wire are conductive grid, and grid conducting layer is contacted with pyramid tips, form parallel removable gate field
Effect transistor structure, when biasing fixed between grid voltage and source and drain, the source-drain current of the structure be applied to grid to pyramid
Compressive deformation is proportional, by designing different pyramid band and the supporting constructions between grid and pyramid band, can design
The quick sensing element of power of different loads sensitive range.
Because said structure pyramid size can reach 20 microns, with integration, single pyramid naked eyes are difficult to differentiate,
Graphene and nano line electrode have high transparency, therefore said structure is adapted to be additionally operable to the flexible force higher to transparency requirement
Quick touch-screen and other force sensing elements.To transparent less demanding application scenario, can be obtained using pyramid size wider
To more Large strain sensitivity and more HDR, therefore can be designed that various different loads are measured by above-mentioned basic structure
The force sensing element of scope, has a wide range of applications.
The content of the invention
The purpose of the present invention is to provide a kind of design, prepare high sensitivity, the method for high stability flexible force sensitive sensor,
Sensor sensitivity in the range of 0 to 3MPa can be designed by structural adjustment, and maximum sensitivity can reach 3MPa-1, with high-temperature, strain stable, minimum dimension can be wide to 20 microns, can be made into transparent, bending curvature thin less than 3 millimeters
Membrane forces sensing structure.
The technical scheme is that；One class is based on the quick sensing element of flexible force of three-dimensional carbon nanomaterial fet structure
Part, is made up of centrum layer and the conductive gate layer being covered on centrum layer；Described centrum Ceng You centers are outwards followed successively by elasticity
Body three-dimensional rib body cone film layer, carbon nanomaterial film layer, parallel strip-like electrodes layer, Ionic colloid dielectric materials layer；Described bullet
Gonosome three-dimensional rib body cone film layer be the taper of some three-dimensional rib bodies into parallel one-dimensional pyramid band or array, described three-dimensional rib body
Bottom width 20-150 microns of cone；The matrix of described conductive gate layer is elastomeric material, and covering flexible conducting material in surface is led
Material layer and the tip contact of the three-dimensional rib body cone of centrum layer, form removable field effect transistor gate；Described carbon is received
Rice material film layers are continuous graphite alkene or dispersing Nano carbon tubes.
Described elastomer three-dimensional rib body cone film layer material is room curing silicon rubber, thermoplastic polyurethane, Etheric ester type heat
Any one in thermoplastic elastic.
The Ionic colloid dielectric materials layer be the double fluoroform semi-annular jade pendant imide salts ionic liquids of 1- ethyl-3-methylimidazoles with
The mixture of vinylidene fluoride-hexafluoropropylene copolymer, carbon nanomaterial thin-film surface is deposited on solution lacquering technique, and thickness is not
More than 200 nanometers.
The matrix of described conductive gate layer is any one in thermoplastic polyurethane, Etheric ester type thermoplastic elastomer, covering
Flexible conducting material be any one in CNT, nano silver wire, copper nano-wire, density causes that square resistance is not more than
1000 ohm.
Described parallel strip-like electrodes layer is silver-colored or copper nano-wire is used as electrode conductive material, using inkjet printing methods system
It is standby to be taken in the pyramid bar for being coated with carbon nanomaterial film layer, as single or fet structure of the parallel edge pricker bar with array
Source, leakage measuring electrode.
The method for preparing the described quick sensing element of flexible force based on three-dimensional carbon nanomaterial fet structure, first prepares
Three-dimensional rib body bores layer, then prepares carbon nanomaterial film layer, then, field is prepared in carbon nanomaterial thin-film surface with photoetching process
Effect measurement area, first covers aqueous photoresist by pyramid strip portion with photoetching process, then removes exposed portion with oxygen plasma
Divide carbon nanomaterial film layer, then prepare silver or copper nano-wire electrode on pyramid band or band array with ink-jet printing process,
A width of 40 to 150 microns of electrode wires, the density of the nano line electrode remains square resistance and is not higher than 200 ohm, is adhered to
In the source of carbon nanomaterial thin-film surface, drain electrode；One layer of Ionic colloid is deposited in above-mentioned carbon nanomaterial thin-film surface,
One layer of conductive gate layer is covered on said structure surface again, matrix is elastomeric material, and surface covers flexible conducting material, and this is led
Electric layer lower surface is contacted with pyramid tips, forms removable field effect transistor gate；Wherein, when carbon nanomaterial film layer is
During continuous graphite alkene, prepare copper surface three dimension rib body with template and electrodeposition process and bore Rotating fields；Existed with chemical vapour deposition technique
Above-mentioned steel structure surface deposits single or multiple lift Graphene；Filled in the minus of above-mentioned steel structure surface with elastomeric material, shape
Into successive substrates thick film；Copper film is dissolved with aqueous solution, the Graphene that formation is covered in 3 d elastic body pyramidal structure surface connects
Continuous film；When carbon nanomaterial film layer is dispersing Nano carbon tubes, prepares elastomer three-dimensional rib body with template and bore Rotating fields；
Layer of semiconductor type single armed CNT is deposited in above-mentioned surface of elastomer with solution lacquering technique, scattered CNT is formed thin
Film layer, thickness is not more than 10 nanometers；Described CNT is prepared with chemical gaseous phase depositing process, 0.8 to 2.5 microns of length,
0.7 to 1.3 nanometers of diameter, electron mobility is not less than 102/ Vs, semi-conductor type carbon pipe content is more than 95%, and dispersion liquid is first
Benzene.
Prepare copper surface three dimension rib body to bore Rotating fields with template and electrodeposition process is first to prepare elastomer precursor gum with template
Film three-dimensional structure, step is：
(5) single or multiple ribbon windows first are made by lithography in the silicon chip surface for having oxide layer, then uses HF erosion removals
Oxide layer, then add isopropanol with tetramethyl aqueous ammonium hydroxide, corrode and pyramid band etch pit minus；
(6) the above-mentioned pyramid-shaped silicon minus of heating is filled with the thermoplastic polyurethane of fusing, machinery after solidifying under vacuo
Peel off, form the polyurethane laminate of eurymeric；
(7) a strata methyl methacrylate is coated with lacquering technique on above-mentioned polyurethane eurymeric surface, thickness is micro- less than 1
Rice, after fully drying, then is suspended on sulphur in one layer of fine copper of surface evaporation with vacuum vapor deposition method by the glued membrane that surface is coated with copper film
In sour copper electrolyte, with fine copper as anode, above-mentioned glued membrane eurymeric is negative electrode, and one layer of fine copper is slowly deposited on surface；
(8) will deposit finish copper film cleaning, dry after immerse toluene in 1 minute, take out drying, glued membrane eurymeric peel off,
After copper film continuation is soaked 10 hours with chloroform, drying is taken out, preserved pure nitrogen gas environment is dried.
Single or multiple lift Graphene is deposited on steel structure surface with chemical vapor deposition method, specifically：By above-mentioned steel structure
Annealed 1 hour for 700 DEG C in hydrogen, be then discharged out hydrogen, be warming up to 900~1020 DEG C, kept for 1 hour, then by 1:1 flow leads to
Enter methane and hydrogen, kept for 15 minutes at 900~1020 DEG C, then slow cooling, obtains being grown in the individual layer on copper surface or many
Layer graphene.
Elastomer three-dimensional rib body is prepared with template bore concretely comprising the following steps for Rotating fields：
(1) single or multiple ribbon windows first are made by lithography in the silicon chip surface for having oxide layer, then uses HF erosion removals
Oxide layer, then add isopropanol with tetramethyl aqueous ammonium hydroxide, corrode and pyramid band etch pit silicon minus；
(2) filled in the minus of above-mentioned silicon structure surface with elastomeric material, successive substrates thick film is formed, after vacuum solidification
Mechanical stripping, forms elastomer glued membrane eurymeric.
Described aqueous solution is iron chloride, ferric nitrate saturated solution.
Beneficial effect
The flexible force sensitive sensor prepared according to the method for the present invention has the advantages that high sensitivity, high stability.The biography
Sensor sensitivity in the range of 0 to 3MPa can be designed by structural adjustment, and maximum sensitivity can reach 3MPa-1, tool
There are high-temperature, strain stable, minimum dimension can be wide to 20 microns, can be made into transparency higher than 80%, bending curvature less than 3 millis
The film power sensing structure of rice.
Brief description of the drawings
Fig. 1 is the quick sensing element preparation process schematic diagram of flexible force.
Fig. 2 is the quick sensing element pyramidal structure micro-image of typical structure flexible force.
Fig. 3 is the quick sensing element structural representation of flexible force.
Wherein, 1 is movable grid, and 2 is leakage, and 3 is gate bias, and 4 bias for source, and 5 is Ionic colloid.
Fig. 4 is the load-field-effect conductance plots of typical element.
Specific embodiment
Graphene used by the present invention be with chemical vapor deposition in the individual layer on three-dimensional copper pyramid minus surface or
Multi-layer graphene, the Graphene forms continuous covering to copper surface, and the uniformity of single or multiple lift film is more than 90%, the copper minus
Means of Electrodeposition is deposited on surface evaporation to be had in one layer of thermoplastic polyurethane eurymeric of copper, and the eurymeric is with after being filled in silicon minus
Prepared by stripping means, prepared by the photoetching on surface oxidation monocrystalline silicon piece of silicon minus, caustic solution, control corrosion rate condition, silicon rib
Taper minus surface roughness reaches bright level, and pyramid tip radius of curvature is less than 1 micron.
CNT used by the present invention is semi-conductor type single-walled structure, is prepared using chemical gaseous phase depositing process, length
0.8 to 2.5 microns, 0.7 to 1.3 nanometers of diameter, electron mobility is not less than 10cm2/ Vs, semi-conductor type carbon pipe content is
100%.
The Graphene on copper pyramid band minus surface is transferred to by elastomer eurymeric surface using transfer method, then in chlorination
Copper substrate is dissolved in iron or ferric nitrate saturated aqueous solution, obtains shifting the continuous graphite alkene on elastomeric edges wimble structure surface.
CNT is coated in elastomer eurymeric using lacquering technique, carbon nanotube layer thickness is not more than 10 nanometers.
The above-mentioned photoetching of elastomeric edges wimble structure and oxygen plasma treatment for being coated with Graphene or CNT is gone
Unnecessary Graphene or CNT in addition to measured zone, then prepare source, drain electrode parallel stripes, i.e., with ink-jet printing process again
In the measured zone including pyramid band by photoetching, development, the photoresist in protection region, development exposure measurement zone are obtained
Part outside domain, the part Graphene or CNT are removed with oxygen plasma, then with ink-jet printing process in vertical rib
Cone strip direction printing silver or copper nano-wire electrode, its density cause that square resistance is not more than 200 ohm, and width 40 to 150 is micro-
Rice, it is source, the flexible structure of leakage measuring electrode to obtain with silver or copper nano-wire.
Dielectric layer uses Ionic colloid, and one is coated in above-mentioned Graphene or CNT and measuring electrode surface with lacquering technique
The mixing of the double fluoroform semi-annular jade pendant imide salts ionic liquids of layer 1- ethyl-3-methylimidazoles and vinylidene fluoride-hexafluoropropylene copolymer
Thing film, its thickness is not more than 200 nanometers.Elastomer thin film of the grid using hardness more than pyramidal structure, in the spray of its surface
Mist method coats one layer of CNT or nano silver wire or copper nano-wire, and its density causes that square resistance is not more than 1000 ohm.
The voltage on grid, the conductance on measurement Graphene or CNT band or band array are applied to by fixation
Change, obtains the measurement to being applied to gate surface compressive load, and grid voltage is not more than 2 volts, source, electric leakage interpolar measurement voltage
No more than 1 volt.
The load measurement scope of above-mentioned sensing arrangement is by designing the area and material of grid and pyramid bar interband supporting construction
Expect to adjust, the occasion transparent to requiring sensor requirements, using single pyramid band, width is less than 40 microns, using relatively low
The grid conducting layer of density, can obtain the power sensing structure that naked eyes can not be differentiated, whole clearing degree is more than 80%；It is small curved to requiring
The occasion of curvature, the grid of pyramid strip substrates and thickness less than 0.05 millimeter using thickness less than 0.1 millimeter, pyramid bar
Belt length side can be bent flexible sensing element of the curvature less than 3 millimeters parallel to bending direction.The measurement spirit of said structure
Sensitivity can realize that effective pyramid width is at 20 microns to 150 microns by adjusting pyramid width.
Said structure measurement signal is that microampere obtains a millivolt magnitude voltages to the electric current of milliampere magnitude or using sampling resistor
Signal, because Graphene has relatively low temperature specific conductance, using the quick sensing element of the power of Graphene without temperature-compensating, stone
The high flexibility of black alkene, CNT causes that force sensing element possesses longer-term service life, by selecting single band to multiple
Parallel stripes constitute array, can prepare tens microns to several millimeters sensing units of measurement area.
The present invention discloses the quick sensing element of flexible force and its preparation that a class is based on three-dimensional carbon nanomaterial fet structure
Method；
Silicon face three-dimensional structure is prepared with template, the structure is the parallel one-dimensional pyramid band of 20 to 150 microns of bottom width
Or array minus；
Copper surface three dimension structure, the structure and above-mentioned silicon structure identical pyramid band are prepared with template and electrodeposition process
Or array minus；
With chemical vapour deposition technique single or multiple lift Graphene is deposited on above-mentioned steel structure surface；
Filled in the minus of above-mentioned steel structure surface with elastomeric material, form successive substrates thick film；
Copper film is dissolved with aqueous solution, formation is covered in the Graphene continuous film on 3 d elastic body pyramidal structure surface；
The template prepares coating semiconductor type CNT elastomer three-dimensional rib body cone Rotating fields, and its step is：
(1) single or multiple ribbon windows first are made by lithography in the silicon chip surface for having oxide layer, then uses HF erosion removals
Oxide layer, then add isopropanol with tetramethyl aqueous ammonium hydroxide, corrode and pyramid band etch pit minus；
(2) filled in the minus of above-mentioned silicon structure surface with elastomeric material, successive substrates thick film is formed, after mechanical stripping
Form elastomer eurymeric glued membrane；
(3) with lacquering technique in above-mentioned eurymeric film surface coating semiconductor type CNT, coating thickness is not more than 10 and receives
Rice.
Parallel strip-like electrodes are prepared in Graphene or carbon nano tube surface with ink-jet printing process, with silver or copper nano-wire conduct
Electrode conductive material, as fet structure source single or that parallel edge pricker bar is with array, leakage measuring electrode；
One layer of Ionic colloid dielectric material is deposited in above-mentioned Graphene or carbon nano tube surface, dielectric layer is formed；
One layer of conductive grid is covered on said structure surface, its matrix is elastomeric material, surface covering compliant conductive material
Material, the conductive layer lower surface is contacted with pyramid tips, forms removable field effect transistor gate；
Compressive load is applied to gate upper surface and base film lower surface, and constant voltage is applied between grid and source and drain,
Curent change between measurement source and drain, obtains the source-drain current changed with compressive load, forms high sensitivity flexible compression loading force quick
Sensing element；
When Ionic colloid dielectric material and relatively thin flexible conducting material, overall absorptivity is smaller than said structure
20%.
The preparation method of described copper surface three dimension structure, first prepares thermoplastic polyurethane three-dimensional structure with template, its
Step is：
(1) single or multiple ribbon windows first are made by lithography in the silicon chip surface for having oxide layer, then uses HF erosion removals
Oxide layer, then add isopropanol with tetramethyl aqueous ammonium hydroxide, corrode and pyramid band etch pit minus；
(2) the above-mentioned pyramid-shaped silicon minus of heating is filled with the thermoplastic polyurethane of fusing, machinery after solidifying under vacuo
Peel off, form the polyurethane laminate of eurymeric；
(3) a strata methyl methacrylate is coated with lacquering technique on above-mentioned polyurethane eurymeric surface, thickness is micro- less than 1
Rice, after fully drying, then with vacuum vapor deposition method one layer of fine copper of its surface evaporation, sulphur is suspended on by the glued membrane that surface is coated with copper film
In sour copper electrolyte, with fine copper as anode, above-mentioned glued membrane eurymeric is negative electrode, and one layer of fine copper is slowly deposited on surface；
(4) will deposit finish copper film cleaning, dry after immerse toluene in 1 minute, take out drying, glued membrane eurymeric peel off,
After copper film continuation is soaked 10 hours with chloroform, drying is taken out, preserved pure nitrogen gas environment is dried.
The use chemical vapor-phase method, in steel structure surface deposited graphite alkene, is to move back above-mentioned steel structure for 700 DEG C in hydrogen
Fire 1 hour, is then discharged out hydrogen, is warming up to 900~1020 DEG C, is kept for 1 hour, then by 1:1 flow is passed through methane and hydrogen,
900~1020 DEG C are kept for 15 minutes, and then slow cooling, obtains being grown in the single or multiple lift Graphene on copper surface.
The elastomeric material fills to form successive substrates thick film on above-mentioned steel structure surface, and elastomer is cold curing
In silicon rubber, thermoplastic polyurethane, Etheric ester type thermoplastic elastomer (TPE) any one；
The aqueous solution dissolves copper film, and aqueous solution is iron chloride, iron nitrate solution saturated solution.
It is described to prepare field-effect measurement zone used in Graphene or carbon nano tube surface, first by pyramid strip portion photoetching process
Aqueous photoresist is covered, then expose portion Graphene or CNT is removed with oxygen plasma, then existed with ink-jet printing process
Preparation silver or copper nano-wire electrode on pyramid band or band array, a width of 40 to 150 microns of electrode wires, the nano line electrode
Density remains square resistance and is not higher than 200 ohm, obtains being attached to source, the drain electrode of Graphene or carbon nano tube surface.
It is described graphenic surface deposit the double fluoroform semi-annular jade pendant imide salts ionic liquids of one layer of 1- ethyl-3-methylimidazole with
The mixture Ionic colloid dielectric film of vinylidene fluoride-hexafluoropropylene copolymer, Graphene or carbon are deposited on solution lacquering technique
Nanotube surface, thickness is not more than 200 nanometers.
Described conductive grid, matrix be thermoplasticity polyurethane, Etheric ester type thermoplastic elastomer in any one, covering it is soft
Property conductive material be CNT, nano silver wire, copper nano-wire, its density causes that square resistance is not more than 1000 ohm.
Embodiment one
1st, in oxidated layer thickness it is 500 nanometers with photoetching process, crystal orientation is<100>Monocrystalline silicon piece on to prepare width 20 micro-
Rice is to 150 microns, the single or multiple parallel photoresist window of 150 microns to 500 microns of length, at hydrofluoric acid dissolution window
Oxide layer, then inserts 1：1 25% weight than tetramethylammonium hydroxide aqueous solution and isopropyl alcohol mixture in, at 95 DEG C
Lower corrosion, is taken out when taper tip is sufficiently formed, and silicon pyramid minus is obtained after cleaning-drying；
2nd, the thermoplastic polyurethane thin slice of 2 millimeters of thickness is covered in silicon pyramid minus surface, 165 is heated in a vacuum
DEG C, pressurization is kept for 5 minutes, is taken out, and peel-strength polyurethane glue-line after cooling and solidifying obtains polyurethane elastomer glued membrane eurymeric；
3rd, first by glued membrane eurymeric in molecular weight 996K, concentration be about 6% weight than polymethyl methacrylate chlorobenzene it is molten
Soaked in liquid, taken out in 150 DEG C of dryings 5 minutes, one layer of fine copper is deposited with its surface with vacuum vapor deposition method, thickness is received more than 100
Rice, then by its surface conductive adhesive electrode cable, dries after fixing, and inserts in the bright electroplate liquid of bronzing, with glued membrane eurymeric
It is negative electrode, pure copper sheet is positive pole, one layer of fine copper is deposited in silastic surface under constant voltage, thickness is not less than 1 millimeter；
4th, will deposit after the copper film that finishes clean with pure water, dries, insert in toluene, place 1 minute, glued membrane eurymeric will be shelled
From, drying is taken out, copper minus is obtained, glued membrane can be with repeat step 3, for preparing another copper minus；
5th, the copper minus peeled off is soaked 10 hours in chloroform, takes out drying, insert the preservation of pure nitrogen gas environment；
6th, with chemical vapour deposition technique in copper minus surface deposited graphite alkene, its step is：By copper minus in 0.6Pa hydrogen
In 700 DEG C anneal 1 hour, be then discharged out hydrogen, be warming up to 900~1020 DEG C, kept for 1 hour, then by 1:1 flow is passed through methane
And hydrogen, kept for 15 minutes at 900~1020 DEG C, then slow cooling, obtains being grown in the single or multiple lift graphite on copper surface
Alkene.
7th, the room curing silicon rubber liquid that will be mixed with curing agent is added dropwise the copper minus surface for having Graphene in growth, true
After aerial degasification 5 minutes, kept for 24 hours at room temperature, after silicon rubber fully solidifies, then by the copper minus of filled silicon rubber
Insert in the iron nitrate aqueous solution of saturation, place 24 hours, treat that copper fully dissolves, take out silicon rubber, wash, dry, obtain table
Face is coated with the silicon rubber eurymeric of continuous graphite alkene；
8th, the photoetching offset plate figure of covering pyramid measured zone is prepared with photoetching process, then exposed region is removed with oxygen plasma
The Graphene in domain, then banding source, drain electrode are prepared in the pyramidal surface for being coated with Graphene with ink-jet printing process, by 0.5mg/ml
Copper nano-wire ethanol/glycolic suspension the ink-jet printer of concentration prints continuous parallel electricity in vertical pyramid strip direction
Pole, density causes that square resistance is not more than 200 ohm, obtains field-effect source, drain electrode with conducting nanowires as electrode, will
Source, drain electrode extraction wire；
9th, by 10% weight than the double fluoroform semi-annular jade pendant imide salts ionic liquids of 1- ethyl-3-methylimidazoles and inclined fluorine second
(weight compares 1 to the mixture of alkene-hexafluoropropylene copolymer:2) Ionic colloid dimethyl formamide solution, is covered with lacquering technique in painting
Graphene and electrode surface are stated, is dried 1 hour at 150 DEG C, form Ionic colloid dielectric film, thickness is not more than 200 nanometers；
10th, with spray method in the thermoplastic polyurethane film surface coated copper that thickness is not more than 0.2 millimeter, hardness is 65A
Nano wire, spraying density causes that square resistance is not more than 1000 ohm, and conducting surface is covered in step 8 by extraction wire after drying
The pyramid band for the being coated with ionic liquid top for preparing forms field effect element grid, is encapsulated with silicon rubber, obtains gross thickness
The quick sensing element of flexible force less than 1 millimeter；
11st, apply constant 1 volt of positive voltage on grid, depending on measurement area size and band number, applied in source, electric leakage interpolar
Plus 0.1 to 1 volt of positive voltage, electric current obtains sensing element with the change for being applied to gate upper surface compressive load between measurement source, leakage
Standard calibration curve, obtain Load Sensitive scope is endogenous, the corresponding load of leakage current, obtaining to unknown with this calibration curve
The measurement of load.
Embodiment two
1st, with embodiment one, 1；
2nd, with embodiment one, 2；
3rd, layer of semiconductor type CNT, CNT dispersion are coated in polyurethane elastomer glued membrane eurymeric with lacquering technique
In toluene solution, concentration is 0.02mg/ml, and 10 nanometers are not more than in the scattered carbon nano-tube film thickness of pyramidal surface,
Dried 1 hour at 140 DEG C；
4th, with embodiment one, 8；
5th, with embodiment one, 9；
6th, with embodiment one, 10；
7th, with embodiment one, 11.
Claims (10)
1. a class is based on the quick sensing element of flexible force of three-dimensional carbon nanomaterial fet structure, it is characterized in that：By centrum layer and
The conductive gate layer being covered on centrum layer is constituted；Described centrum Ceng You centers are outwards followed successively by elastomer three-dimensional rib body cone film
Layer, carbon nanomaterial film layer, parallel strip-like electrodes layer, Ionic colloid dielectric materials layer；Described elastomer three-dimensional rib body cone
Film layer be the taper of some three-dimensional rib bodies into parallel one-dimensional pyramid band or array, the bottom width 20-150 of described three-dimensional rib body cone
Micron；The matrix of described conductive gate layer is elastomeric material, surface covering flexible conducting material, conductive material layer and centrum
The tip contact of the three-dimensional rib body cone of layer, forms removable field effect transistor gate；Described carbon nanomaterial film layer is
Continuous graphite alkene or dispersing Nano carbon tubes.
2. the quick sensing element of flexible force of three-dimensional carbon nanomaterial fet structure, its feature are based on as claimed in claim 1
It is：Described elastomer three-dimensional rib body cone film layer material is room curing silicon rubber, thermoplastic polyurethane, Etheric ester type thermoplastic elastomehc
Any one in gonosome.
3. the quick sensing element of flexible force of three-dimensional carbon nanomaterial fet structure, its feature are based on as claimed in claim 1
It is：The Ionic colloid dielectric materials layer is the double fluoroform semi-annular jade pendant imide salts ionic liquids of 1- ethyl-3-methylimidazoles and inclined fluorine
The mixture of ethene-hexafluoropropylene copolymer, carbon nanomaterial thin-film surface is deposited on solution lacquering technique, and thickness is not more than
200 nanometers.
4. the quick sensing element of flexible force of three-dimensional carbon nanomaterial fet structure, its feature are based on as claimed in claim 1
It is：The matrix of described conductive gate layer is any one in thermoplastic polyurethane, Etheric ester type thermoplastic elastomer, the flexibility of covering
Conductive material is any one in CNT, nano silver wire, copper nano-wire, and density causes that square resistance is not more than 1000 Europe
Nurse.
5. the quick sensing element of flexible force of three-dimensional carbon nanomaterial fet structure, its feature are based on as claimed in claim 1
It is：Described parallel strip-like electrodes layer silver or copper nano-wire are prepared as electrode conductive material using inkjet printing methods
The pyramid bar for being coated with carbon nanomaterial film layer takes, as fet structure source single or that parallel edge pricker bar is with array,
Leakage measuring electrode.
6. any described quick sensing elements of flexible force based on three-dimensional carbon nanomaterial fet structure of claim 1-5 are prepared
Method, it is characterized in that：Three-dimensional rib body cone layer is first prepared, then prepares carbon nanomaterial film layer, then, received in carbon with photoetching process
Rice material film layer surface prepares field-effect measurement zone, pyramid strip portion first is covered into aqueous photoresist with photoetching process, then
Expose portion carbon nanomaterial film layer is removed with oxygen plasma, then with ink-jet printing process on pyramid band or band array
Silver or copper nano-wire electrode are prepared, a width of 40 to 150 microns of electrode wires, the density of the nano line electrode remains square resistance not
Higher than 200 ohm, obtain being attached to source, the drain electrode of carbon nanomaterial thin-film surface；In above-mentioned carbon nanomaterial film layer
Surface deposits one layer of Ionic colloid, then covers one layer of conductive gate layer on said structure surface, and matrix is elastomeric material, surface
Covering flexible conducting material, the conductive layer lower surface is contacted with pyramid tips, forms removable field effect transistor gate；Its
In, when carbon nanomaterial film layer is continuous graphite alkene, prepares copper surface three dimension rib body with template and electrodeposition process and bore layer
Structure；With chemical vapour deposition technique single or multiple lift Graphene is deposited on above-mentioned steel structure surface；With elastomeric material above-mentioned
Filled in the minus of steel structure surface, form successive substrates thick film；Copper film is dissolved with aqueous solution, formation is covered in 3 d elastic body
The Graphene continuous film on pyramidal structure surface；When carbon nanomaterial film layer is dispersing Nano carbon tubes, prepared with template
Elastomer three-dimensional rib body cone Rotating fields；With solution lacquering technique layer of semiconductor type single armed carbon nanometer is deposited in above-mentioned surface of elastomer
Pipe, forms scattered carbon nano-tube film layer, and thickness is not more than 10 nanometers；Described CNT chemical gaseous phase depositing process
Prepare, 0.8 to 2.5 microns of length, 0.7 to 1.3 nanometers of diameter, electron mobility is not less than 102/ Vs, semi-conductor type carbon pipe contains
Amount is more than 95%, and dispersion liquid is toluene.
7. it is as claimed in claim 6 to prepare the quick sensing element of flexible force based on continuous three-dimensional carbon nanomaterial fet structure
Method, it is characterized in that：Prepare copper surface three dimension rib body to bore Rotating fields with template and electrodeposition process is first to be prepared with template
Elastomer glued membrane three-dimensional structure, step is：
(1) single or multiple ribbon windows first are made by lithography in the silicon chip surface for having oxide layer, is then aoxidized with HF erosion removals
Layer, then add isopropanol with tetramethyl aqueous ammonium hydroxide, corrode and pyramid band etch pit minus；
(2) the above-mentioned pyramid-shaped silicon minus of heating is filled with the thermoplastic polyurethane of fusing, mechanical stripping after solidifying under vacuo,
Form the polyurethane laminate of eurymeric；
(3) a strata methyl methacrylate is coated with lacquering technique on above-mentioned polyurethane eurymeric surface, thickness is less than 1 micron, fills
Divide after drying, then the glued membrane that surface is coated with copper film is suspended on copper sulphate in one layer of fine copper of surface evaporation with vacuum vapor deposition method
In electrolyte, with fine copper as anode, above-mentioned glued membrane eurymeric is negative electrode, and one layer of fine copper is slowly deposited on surface；
(4) will deposit finish copper film cleaning, dry after immerse toluene in 1 minute, take out drying, glued membrane eurymeric peel off, by copper
After film continuation is soaked 10 hours with chloroform, drying is taken out, preserved pure nitrogen gas environment is dried.
8. it is as claimed in claim 6 to prepare the quick sensing element of flexible force based on continuous three-dimensional carbon nanomaterial fet structure
Method, it is characterized in that：Single or multiple lift Graphene is deposited on steel structure surface with chemical vapor deposition method, specifically：Will be upper
State steel structure to be annealed 1 hour for 700 DEG C in hydrogen, be then discharged out hydrogen, be warming up to 900~1020 DEG C, kept for 1 hour, then press
1:1 flow is passed through methane and hydrogen, is kept for 15 minutes at 900~1020 DEG C, and then slow cooling, obtains being grown in copper surface
Single or multiple lift Graphene.
9. it is as claimed in claim 7 to prepare the quick sensing element of flexible force based on continuous three-dimensional carbon nanomaterial fet structure
Method, it is characterized in that：Elastomer three-dimensional rib body is prepared with template bore concretely comprising the following steps for Rotating fields：
(1) single or multiple ribbon windows first are made by lithography in the silicon chip surface for having oxide layer, is then aoxidized with HF erosion removals
Layer, then add isopropanol with tetramethyl aqueous ammonium hydroxide, corrode and pyramid band etch pit silicon minus；
(2) filled in the minus of above-mentioned silicon structure surface with elastomeric material, form successive substrates thick film, machinery after vacuum solidification
Peel off, form elastomer glued membrane eurymeric.
10. it is as claimed in claim 7 to prepare the quick sensing element of flexible force based on continuous three-dimensional carbon nanomaterial fet structure
The method of part, it is characterized in that：Described aqueous solution is iron chloride, ferric nitrate saturated solution.
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