CN106768524A - A kind of diaphragm pressure sensor and its manufacture method - Google Patents
A kind of diaphragm pressure sensor and its manufacture method Download PDFInfo
- Publication number
- CN106768524A CN106768524A CN201710090793.4A CN201710090793A CN106768524A CN 106768524 A CN106768524 A CN 106768524A CN 201710090793 A CN201710090793 A CN 201710090793A CN 106768524 A CN106768524 A CN 106768524A
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- thin film
- pressure sensor
- insulating barrier
- diaphragm pressure
- elastic base
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
Abstract
The present invention relates to pressure sensor technique field, more particularly, to a kind of diaphragm pressure sensor and its manufacture method, the diaphragm pressure sensor includes elastic base, insulating barrier, thin film strain resistor, electrode district, passivation layer and gold thin film；The insulating barrier is on elastic base, and insulating barrier is the insulating thick film medium slurry bed of material；Thin film strain resistor and electrode district are on the insulating barrier；Passivation layer is equipped with the exposed insulating barrier of thin film strain resistor and surface；The gold thin film is located on electrode district to form electrode welding zone.A kind of diaphragm pressure sensor of the present invention and its manufacture method, by using the insulating thick film medium slurry bed of material, so that elastic base need not be ground polishing and can have disposed thereon the insulating thick film medium slurry bed of material, to reach the purpose that elastic base insulate with thin film strain resistor and electrode district, preparation cost is low, preparation efficiency is high, and with high accuracy, high stability.
Description
Technical field
The present invention relates to pressure sensor technique field, more particularly, to a kind of diaphragm pressure sensor and its manufacture
Method.
Background technology
Diaphragm pressure sensor be the progress with thin film technique and semiconductor process technique and gradually grow up it is new
Type pressure sensor, also referred to as third generation pressure sensor, it has high precision, good stability, adverse environment resistant（High temperature,
Burn into vibrates）The advantages of, had a wide range of applications in fields such as Aero-Space, military equipment, petrochemical industry, engineering machinery.
Existing diaphragm pressure sensor is to sputter insulating barrier on the stainless steel elastic base of fine surface treatment（Dioxy
SiClx etc.）To realize the insulation of stainless steel elastic base and thin film strain resistor layer.Elastic base will be by strict corase grind, thin
Mill and polishing, the surface roughness requirements of elastic base are less than 0.1 μm, and abrasive polishing process is set using different machinery
For what is carried out, small per lot number amount, time-consuming, and efficiency is low；Insulating barrier needs to be sputtered for a long time in high vacuum, therefore stainless steel bomb
The surface treatment of elastic base and the processing of insulating barrier of property base film pressure sensor are high with preparation cost, efficiency is low.
With the development of modern thick film technology, dielectric paste and sintering process have a significant raising, thick film ink it is exhausted
Edge resistance can be more than 1010Ώ；Stainless steel elastic base by after simple surface treatment, in its surface coated media slurry
And the sintering of short time is carried out at 850 DEG C -860 DEG C, can just reach the requirement of sensor insulation, thick film dielectric paste be not required to otherwise
Rust steel bomb base-plates surface carries out strict Surface Machining, is not also limited by vacuum equipment, and process time is short, therefore it is processed
Low cost, efficiency high, high yield rate, can produce in enormous quantities；But thick-film strain resistor is prepared using thick film technology, thick film should
Becoming resistance will be influenceed by the composition of resistance slurry, the edge effect of printed resistor bar, sintering process so that thick-film strain resistor
There is the shortcomings of precision is low, stability is poor in sensor.
Therefore, develop that a kind of preparation cost is low, preparation efficiency is high, and the pressure sensor with high accuracy, high stability
It is of crucial importance.
The content of the invention
It is an object of the invention to overcome the deficiencies in the prior art, there is provided a kind of diaphragm pressure sensor, the pressure sensing
The preparation cost of device is low, preparation efficiency is high, and with high accuracy, high stability.
To reach above-mentioned purpose, the technical solution adopted by the present invention is：
A kind of diaphragm pressure sensor, including elastic base, insulating barrier, thin film strain resistor, electrode district, passivation layer and gold are provided
Film；The insulating barrier is on elastic base, and insulating barrier is the insulating thick film medium slurry bed of material；Thin film strain resistor and electrode
Qu Jun is on the insulating barrier；Passivation layer is equipped with the exposed insulating barrier of thin film strain resistor and surface；The gold thin film
Forming electrode welding zone on electrode district.Gold thin film has good electric conductivity and welding performance.
In such scheme, by using the insulating thick film medium slurry bed of material so that elastic base need not be ground at polishing
Reason can have disposed thereon the insulating thick film medium slurry bed of material, to reach what elastic base and thin film strain resistor and electrode district insulated
Purpose.A kind of diaphragm pressure sensor of the present invention, preparation cost is low, preparation efficiency is high, and with high accuracy, high stability.
Preferably, the passivation layer is silicon nitride passivation layer.So set can protective film strain resistor surface,
The exposed insulating thick film medium slurry bed of material in edge and surface of thin film strain resistor is not influenceed by factors such as air and humidities, is made
Obtain the diaphragm pressure sensor and adapt to the work of the adverse circumstances such as high temperature, high humidity；And silicon nitride passivation layer is compared to two
It is not only finer and close for silicon oxide passivation layer, with more preferable barrier, and it is avoided that sputtering silica as passivation
Influence of the oxygen to thin film strain resistor during layer.It is further preferred that the thickness of the silicon nitride passivation layer is 0.3 ~ 0.5 μ
m。
Preferably, the elastic base includes circular flat diaphragm and stainless steel bracing frame, and the stainless steel bracing frame is located at
The periphery of circular flat diaphragm；The insulating barrier is located on circular flat diaphragm.It is further preferred that whole elastic base be geneva not
Rust steel construction, so sets and causes that the good corrosion resistance of elastic base, intensity are high.
Preferably, thin film strain resistor and electrode district are chrome-nickel alloy thin film structure.So set and cause thin film strain
Resistance has stability higher；And the electrode district of chrome-nickel alloy thin film structure can effectively prevent gold film electrode from being diffused into absolutely
Edge layer, and then destroy the insulating properties of insulating barrier.It is further preferred that the thickness of the chrome-nickel alloy thin film structure is 0.1 ~ 0.3 μ
m。
Preferably, the thickness of the insulating barrier is 50 ~ 60 μm.
It is another object of the present invention to provide a kind of manufacture method of diaphragm pressure sensor, comprise the following steps：
S1. it is uniform on elastic base to coat insulating thick film dielectric paste and sinter to form the insulating thick film medium slurry bed of material；
S2. thin film electrostrictive strain resistance layer is sputtered on the insulating thick film medium slurry bed of material, light is used on thin film strain resistor layer
The method at quarter processes to form thin film strain resistor and electrode district；
S3. passivation layer is covered on the exposed insulating barrier of thin film strain resistor and surface；
S4. gold thin film is sputtered on electrode district to form electrode welding zone.
Such as in step S1, first the surface to elastic base carries out simple process, simple milled processed, then thick film is exhausted
Edge dielectric paste is coated uniformly on elastic base.
A kind of manufacture method of diaphragm pressure sensor of the present invention, thick film is sintered into by using insulating thick film dielectric paste
The mode of dielectric pulp layer so that it is exhausted that elastic base is sintered thick film thereon by need not being ground polishing
The edge medium slurry bed of material, eliminates time-consuming abrasive polishing process, without the long-time sputtered film insulating barrier in high vacuum, drop
While the low sensor preparation cost, preparation efficiency is improve, and the pressure sensor also retains diaphragm pressure sensing
The high accuracy and high stability of device, overcome the shortcoming that thick film pressure transducer precision is low, stability is poor.
Preferably, insulating thick film dielectric paste is coated uniformly on elastic base in step S1,20 is dried at 125 DEG C
After minute, sinter 10 minutes to complete first sintering through 850 DEG C in atmosphere, then having been carried out the elasticity of first sintering
Second sintering with first sintering technique the same terms is carried out on pedestal, by forming thick after the sintering of similarity condition twice
Film dielectric pulp layer.The pin hole between the sintering energy blocking insulation layer of the same terms twice and gap are carried out, is further improved
The insulating properties of insulating barrier.
Preferably, passivation layer described in step S3 is silicon nitride passivation layer.So setting can protective film electrostrictive strain
The surface of resistance, the exposed insulating thick film medium slurry bed of material in the edge of thin film strain resistor and surface be not by factors such as air and humidities
Influence so that the diaphragm pressure sensor adapt to the adverse circumstances such as high temperature, high humidity work；And silicon nitride passivation layer
It is not only finer and close for silicon dioxide passivation layer, with more preferable barrier, and it is avoided that sputtering silica
Influence of the oxygen to thin film strain resistor during as passivation layer.
Compared with prior art, the beneficial effects of the invention are as follows：
A kind of diaphragm pressure sensor of the present invention, by using the insulating thick film medium slurry bed of material so that elastic base need not be carried out
Grinding and polishing treatment can have disposed thereon the insulating thick film medium slurry bed of material, to reach elastic base and thin film strain resistor and electricity
The purpose of polar region insulation, this is caused, and the sensor preparation cost is low, preparation efficiency is high, and with high accuracy, high stability；Pass through
Passivation layer is set to silicon nitride passivation layer, can the surface of protective film strain resistor, the edge of thin film strain resistor and
The insulating thick film medium slurry bed of material is not influenceed by factors such as air and humidities so that the diaphragm pressure sensor adapt to high temperature,
The adverse circumstances such as high humidity work, and silicon nitride passivation layer is not only finer and close for silicon dioxide passivation layer, tool
There are more preferable barrier, and influence of the oxygen to thin film strain resistor when being avoided that sputtering silica as passivation layer；It is logical
Cross and thin film strain resistor and electrode district are disposed as chrome-nickel alloy thin film structure so that thin film strain resistor has higher steady
Qualitative and chrome-nickel alloy thin film structure electrode district can effectively prevent gold film electrode from being diffused into insulating barrier, and then destroy insulation
The insulating properties of layer；A kind of manufacture method of diaphragm pressure sensor of the present invention, is sintered into by using insulating thick film dielectric paste
The mode of the insulating thick film medium slurry bed of material so that elastic base is sintered thickness thereon by need not being ground polishing
Film dielectric pulp layer, eliminates time-consuming abrasive polishing process, is insulated without the long-time sputtered film in high vacuum
Layer, while reducing the sensor preparation cost, improves preparation efficiency, and the pressure sensor also retains diaphragm pressure
The high accuracy and high stability of sensor, overcome the shortcoming that thick film pressure transducer precision is low, stability is poor.
Brief description of the drawings
Fig. 1 is a kind of structural representation of diaphragm pressure sensor of the present embodiment.
Fig. 2 is the structural representation of thin film strain resistor and electrode district in Fig. 1.
Specific embodiment
With reference to specific embodiment, the present invention is further illustrated.Wherein, being for illustration only property of accompanying drawing explanation,
What is represented is only schematic diagram, rather than pictorial diagram, it is impossible to be interpreted as the limitation to this patent；In order to reality of the invention is better described
Apply example, accompanying drawing some parts have omission, zoom in or out, and do not represent the size of actual product；To those skilled in the art
For, some known features and its explanation may be omitted and will be understood by accompanying drawing.
The same or analogous part of same or analogous label correspondence in the accompanying drawing of the embodiment of the present invention；Retouched of the invention
In stating, it is to be understood that if having term " on ", D score, the orientation of the instruction such as "left", "right" or position relationship be based on accompanying drawing
Shown orientation or position relationship, are for only for ease of and describe of the invention and simplify description, signified rather than instruction or hint
Device or element must be with specific orientation, with specific azimuth configuration and operation, therefore position relationship described in accompanying drawing
Term being for illustration only property explanation, it is impossible to be interpreted as the limitation to this patent, for the ordinary skill in the art, can
To understand the concrete meaning of above-mentioned term as the case may be.
Embodiment
A kind of structural representation of diaphragm pressure sensor of the present embodiment as shown in Figure 1 to Figure 2, including elastic base 1, absolutely
Edge layer 2, thin film strain resistor 3, electrode district 4, passivation layer 5 and gold thin film 6；The insulating barrier 2 is located on elastic base 1, and absolutely
Edge layer 2 is the insulating thick film medium slurry bed of material；Thin film strain resistor 3 and electrode district 4 are on the insulating barrier 2；Thin film strain
Passivation layer 5 is equipped with the exposed insulating barrier 2 of resistance 3 and surface；The gold thin film 6 is welded on electrode district 4 with forming electrode
Meet area.Gold thin film 6 has good electric conductivity and welding performance.
A kind of diaphragm pressure sensor of the present invention, by using the insulating thick film medium slurry bed of material so that elastic base need not
It is ground polishing and can have disposed thereon the insulating thick film medium slurry bed of material, reaches elastic base and thin film strain resistor
And the purpose of electrode district insulation, preparation cost is low, preparation efficiency is high, and with high accuracy, high stability.
Specifically, when the diaphragm pressure sensor is manufactured, comprise the following steps：
S1. it is uniform on elastic base 1 to coat insulating thick film dielectric paste and sinter to form the insulating thick film medium slurry bed of material；
S2. thin film electrostrictive strain resistance layer is sputtered on the insulating thick film medium slurry bed of material, light is used on thin film strain resistor layer
The method at quarter processes to form thin film strain resistor 3 and electrode district 4；
S3. passivation layer 5 is covered on the exposed insulating barrier 2 of thin film strain resistor 3 and surface；
S4. gold thin film 6 is sputtered on electrode district 4 to form electrode welding zone.
In the manufacturing process of the pressure sensor, insulating thick film medium slurry is sintered into by using insulating thick film dielectric paste
The mode of the bed of material so that elastic base 1 is sintered insulating thick film medium slurry thereon by need not being ground polishing
The bed of material, eliminates time-consuming abrasive polishing process, without the long-time sputtered film insulating barrier in high vacuum, reduces the sensing
While device preparation cost, preparation efficiency is improve, and the pressure sensor also retains the high-precision of diaphragm pressure sensor
Degree and high stability, overcome the shortcoming that thick film pressure transducer precision is low, stability is poor.
Wherein, the passivation layer 5 is silicon nitride passivation layer 5.The table of energy protective film strain resistor 3 is so set
Face, the exposed insulating thick film medium slurry bed of material in the edge of thin film strain resistor 3 and surface be not by the shadow of the factors such as air and humidity
Ring so that the diaphragm pressure sensor adapts to the work of the adverse circumstances such as high temperature, high humidity；And silicon nitride passivation layer is compared
It is not only finer and close for silicon dioxide passivation layer, with more preferable barrier, and it is avoided that sputtering silica conduct
Influence of the oxygen to thin film strain resistor 3 during passivation layer.In the present embodiment, the thickness of the silicon nitride passivation layer 5 for 0.3 ~
0.5μm。
In addition, the elastic base 1 includes circular flat diaphragm 11 and stainless steel bracing frame 12, the stainless steel bracing frame 12
Located at the periphery of circular flat diaphragm 11；The insulating barrier 2 is located on circular flat diaphragm 11.In the present embodiment, whole elastic base 1
It is geneva stainless steel structure, so sets and cause that the good corrosion resistance of elastic base 1, intensity are high.
Wherein, thin film strain resistor 3 and electrode district 4 are chrome-nickel alloy thin film structure.So set and cause thin film strain
Resistance 3 has stability higher；And the electrode district 4 of chrome-nickel alloy thin film structure can effectively prevent the electrode diffusion of gold thin film 6
To insulating barrier 2, and then destroy the insulating properties of insulating barrier 2.In the present embodiment, the thickness of the chrome-nickel alloy thin film structure for 0.1 ~
0.3μm。
In addition, the thickness of the insulating barrier 2 is 50 ~ 60 μm.
The present embodiment additionally provides a kind of manufacture method of diaphragm pressure sensor, comprises the following steps：
S1. it is uniform on elastic base 1 to coat insulating thick film dielectric paste and sinter to form the insulating thick film medium slurry bed of material；
S2. thin film electrostrictive strain resistance layer is sputtered on the insulating thick film medium slurry bed of material, light is used on thin film strain resistor layer
The method at quarter processes to form thin film strain resistor 3 and electrode district 4；
S3. passivation layer 5 is covered on the exposed insulating barrier 2 of thin film strain resistor 3 and surface；
S4. gold thin film 6 is sputtered on electrode district 4 to form electrode welding zone.
In step S1, first the surface to elastic base 1 carries out simple process, such as simple milled processed, then by thick film
Dielectric slurry is coated uniformly on elastic base 1.
A kind of manufacture method of diaphragm pressure sensor of the present invention, thick film is sintered into by using insulating thick film dielectric paste
The mode of dielectric pulp layer so that elastic base 1 is sintered thick film thereon by need not being ground polishing
Dielectric pulp layer, eliminates time-consuming abrasive polishing process, without the long-time sputtered film insulating barrier in high vacuum,
While reducing the sensor preparation cost, preparation efficiency is improve, and the pressure sensor also retains diaphragm pressure biography
The high accuracy and high stability of sensor, overcome the shortcoming that thick film pressure transducer precision is low, stability is poor.
Wherein, insulating thick film dielectric paste is coated uniformly on elastic base 1 in step S1,20 is dried at 125 DEG C
After minute, sinter 10 minutes to complete first sintering through 850 DEG C in atmosphere, then having been carried out the elasticity of first sintering
Second sintering with first sintering technique the same terms is carried out on pedestal 1, by being formed after the sintering of similarity condition twice
The insulating thick film medium slurry bed of material.The pin hole between the sintering energy blocking insulation layer 2 of the same terms twice and gap are carried out, is further carried
The insulating properties of high insulation 2.
In addition, passivation layer 5 described in step S3 is silicon nitride passivation layer 5.So setting can protective film electrostrictive strain
Surface, the exposed insulating thick film medium slurry bed of material in the edge of thin film strain resistor 3 and surface of resistance 3 by air and humidity etc. because
The influence of element so that the diaphragm pressure sensor adapts to the work of the adverse circumstances such as high temperature, high humidity；And silicon nitride is passivated
Layer is not only finer and close for silicon dioxide passivation layer, with more preferable barrier, and is avoided that sputtering titanium dioxide
Influence of the oxygen to thin film strain resistor 3 when silicon is as passivation layer.
Obviously, the above embodiment of the present invention is only intended to clearly illustrate example of the present invention, and is not right
The restriction of embodiments of the present invention.For those of ordinary skill in the field, may be used also on the basis of the above description
To make other changes in different forms.There is no need and unable to be exhaustive to all of implementation method.It is all this
Any modification, equivalent and improvement made within the spirit and principle of invention etc., should be included in the claims in the present invention
Protection domain within.
Claims (10)
1. a kind of diaphragm pressure sensor, it is characterised in that including elastic base（1）, insulating barrier（2）, thin film strain resistor
（3）, electrode district（4）, passivation layer（5）And gold thin film（6）；The insulating barrier（2）Located at elastic base（1）On, and insulating barrier（2）
It is the insulating thick film medium slurry bed of material；Thin film strain resistor（3）And electrode district（4）It is located at the insulating barrier（2）On；Thin film strain
Resistance（3）And the exposed insulating barrier in surface（2）On be equipped with passivation layer（5）；The gold thin film（6）Located at electrode district（4）On with
Form electrode welding zone.
2. a kind of diaphragm pressure sensor according to claim 1, it is characterised in that the passivation layer（5）It is four nitridations
Three silicon passivation layers（5）.
3. a kind of diaphragm pressure sensor according to claim 2, it is characterised in that the silicon nitride passivation layer
（5）Thickness be 0.3 ~ 0.5 μm.
4. a kind of diaphragm pressure sensor according to claim 1, it is characterised in that the elastic base（1）Including circle
Shape flat diaphragm（11）And stainless steel bracing frame（12）, the stainless steel bracing frame（12）Located at circular flat diaphragm（11）Periphery；
The insulating barrier（2）Located at circular flat diaphragm（11）On.
5. a kind of diaphragm pressure sensor according to claim 1, it is characterised in that thin film strain resistor（3）And electrode
Area（4）It is chrome-nickel alloy thin film structure.
6. a kind of diaphragm pressure sensor according to claim 5, it is characterised in that the chrome-nickel alloy thin film structure
Thickness is 0.1 ~ 0.3 μm.
7. a kind of diaphragm pressure sensor according to any one of claim 1 to 6, it is characterised in that the insulating barrier（2）
Thickness be 50 ~ 60 μm.
8. a kind of manufacture method of diaphragm pressure sensor, it is characterised in that comprise the following steps：
S1. in elastic base（1）Upper uniform coating insulating thick film dielectric paste simultaneously sinters to form the insulating thick film medium slurry bed of material；
S2. thin film electrostrictive strain resistance layer is sputtered on the insulating thick film medium slurry bed of material, light is used on thin film strain resistor layer
The method at quarter processes to form thin film strain resistor（3）And electrode district（4）；
S3. in thin film strain resistor（3）And the exposed insulating barrier in surface（2）Upper covering passivation layer（5）；
S4. in electrode district（4）Upper sputtering gold thin film（6）To form electrode welding zone.
9. the manufacture method of a kind of diaphragm pressure sensor according to claim 8, it is characterised in that by thickness in step S1
Film dielectric slurry is coated uniformly on elastic base（1）On, after being dried 20 minutes at 125 DEG C, in atmosphere through 850 DEG C of burnings
Knot 10 minutes is completing first sintering, then is having been carried out the elastic base of first sintering（1）On carry out and for the first time burn
Second sintering of knot technique the same terms, by forming the insulating thick film medium slurry bed of material after the sintering of similarity condition twice.
10. a kind of manufacture method of diaphragm pressure sensor according to claim 8, it is characterised in that institute in step S3
State passivation layer（5）It is silicon nitride passivation layer（5）.
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| CN111417830A (en) * | 2017-09-29 | 2020-07-14 | 美蓓亚三美株式会社 | Strain gauge and sensor module |
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| CN112775619A (en) * | 2019-11-11 | 2021-05-11 | 太原市精微测控技术有限公司 | Method for processing elastic diaphragm of sputtering film pressure sensor |
| CN113728217A (en) * | 2019-04-26 | 2021-11-30 | 长野计器株式会社 | Pressure sensor |
| US11454488B2 (en) | 2017-09-29 | 2022-09-27 | Minebea Mitsumi Inc. | Strain gauge with improved stability |
| US11542590B2 (en) | 2017-09-29 | 2023-01-03 | Minebea Mitsumi Inc. | Strain gauge |
| US11543308B2 (en) | 2017-09-29 | 2023-01-03 | Minebea Mitsumi Inc. | Strain gauge |
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| CN111417830A (en) * | 2017-09-29 | 2020-07-14 | 美蓓亚三美株式会社 | Strain gauge and sensor module |
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| US11692806B2 (en) | 2017-09-29 | 2023-07-04 | Minebea Mitsumi Inc. | Strain gauge with improved stability |
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| US11543309B2 (en) | 2017-12-22 | 2023-01-03 | Minebea Mitsumi Inc. | Strain gauge and sensor module |
| CN111742189A (en) * | 2017-12-22 | 2020-10-02 | 美蓓亚三美株式会社 | Strain gauge and sensor module |
| US11747225B2 (en) | 2018-04-05 | 2023-09-05 | Minebea Mitsumi Inc. | Strain gauge with improved stability and stress reduction |
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