CN106452152A - Switch boost type high-gain quasi-Z-source inverter - Google Patents

Switch boost type high-gain quasi-Z-source inverter Download PDF

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Publication number
CN106452152A
CN106452152A CN201610508665.2A CN201610508665A CN106452152A CN 106452152 A CN106452152 A CN 106452152A CN 201610508665 A CN201610508665 A CN 201610508665A CN 106452152 A CN106452152 A CN 106452152A
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electric capacity
diode
inductance
source
quasi
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CN201610508665.2A
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Chinese (zh)
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张波
朱小全
丘东元
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South China University of Technology SCUT
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South China University of Technology SCUT
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Priority to CN201610508665.2A priority Critical patent/CN106452152A/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/325—Means for protecting converters other than automatic disconnection with means for allowing continuous operation despite a fault, i.e. fault tolerant converters

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

The invention provides a switch boost type high-gain quasi-Z-source inverter comprising a voltage source, a switch boost unit which is composed of a first electric inductor, a first diode, a first MOS transistor, a first capacitor and a second diode, a first quasi-Z-source unit which is composed of a second electric inductor, a second capacitor, a third capacitor and a third diode, a second quasi-Z-source unit which is composed of a third electric inductor, a fourth diode, a fourth capacitor and a fifth capacitor, a three-phase inverter bridge, an output filtering inductor, a filtering capacitor and a load. The single-stage boost-buck characteristics of the switch boost unit and the quasi-Z-source units are combined by the whole circuit so as to have higher output voltage gain, continuous power supply current, continuous load current and output and input common ground. Besides, the circuit has no starting impact current and impact current of the connection instant of switch tubes.

Description

A kind of quasi- Z-source inverter of switching boost type high-gain
Technical field
The present invention relates to Power Electronic Circuit technical field is and in particular to a kind of quasi- Z source inversion of switching boost type high-gain Device circuit.
Background technology
In fuel cell power generation, photovoltaic generation, due to single solar cell or single fuel cell provide straight Stream voltage is relatively low nor to meet grid-connected demand it is impossible to meet the need for electricity of existing electrical equipment, and generally requiring will be multiple Battery is together in series and reaches required voltage.This method one side greatly reduces the reliability of whole system, on the other hand Also need to solve the problems, such as series average-voltage.For this reason, it may be necessary to can be high-tension high-gain converter circuit low voltage transition.Closely several The Z source booster converter that year proposes is a kind of high-gain converter circuit, but this circuit has higher impedance network electric capacity electricity Compression, source current is discontinuous, and output with input not altogether, and has very big inrush current problem during circuit start, Limit the application in practice of this circuit.
Content of the invention
It is an object of the invention to overcoming above-mentioned the deficiencies in the prior art, provide a kind of switching boost type high-gain quasi- Z source Inverter circuit, concrete technical scheme is as follows.
A kind of quasi- Z-source inverter of switching boost type high-gain, including voltage source, by the first inductance, the first diode, first Metal-oxide-semiconductor, the boost switching unit that the first electric capacity and the second diode are constituted, by the second inductance, the second electric capacity, the 3rd electric capacity and the The first quasi- Z source unit that three diodes are constituted, the being made up of the 3rd inductance, the 4th diode, the 4th electric capacity and the 5th electric capacity Two quasi- Z source units, three phase inverter bridge, output inductor, filter capacitor and load.
In a kind of above-mentioned quasi- Z-source inverter of switching boost type high-gain, the positive pole of described voltage source and the first inductance One end connects；The other end of described first inductance is connected with the anode of the first diode and the drain electrode of the first metal-oxide-semiconductor respectively；Described The source electrode of the first metal-oxide-semiconductor is connected with the anode of the second diode and the negative pole of the first electric capacity respectively；The moon of described first diode Pole is connected with the positive pole of the first electric capacity, the anode of the 3rd diode and the negative pole of the second electric capacity respectively；Described 3rd diode Negative electrode is connected with one end of the second inductance, the positive pole of the 3rd electric capacity and the negative pole of the 4th electric capacity respectively；Described second inductance another One end is connected with the positive pole of the second electric capacity, the anode of the 4th diode and the negative pole of the 5th electric capacity respectively；Described 4th diode Negative electrode be connected with the positive pole of the 4th electric capacity and one end of the 3rd inductance respectively；The other end of described 3rd inductance is respectively with the 5th The positive ends of the positive pole of electric capacity and three phase inverter bridge connect；The negative pole of described voltage source respectively with the negative electrode of the second diode, The negative polarity end of the negative pole of the 3rd electric capacity and three phase inverter bridge connects.
Compared with prior art, circuit of the present invention has the advantage that and technique effect：Present invention incorporates boost switching Unit and quasi- Z source unit respective single-stage buck characteristic, have higher output voltage gain, and source current is continuous, load Electric current is continuous, exports with input altogether, and circuit there is not inrush current and switching tube opens the dash current of moment, because And it is more suitably applied to the technical field of new energy power generation such as fuel cell power generation and photovoltaic generation.
Brief description
Fig. 1 is the quasi- Z-source inverter circuit of one of specific embodiment of the invention switching boost type high-gain.
Fig. 2 is the simplification equivalent electric that quasi- Z-source inverter carries out model analysis to switching boost type high-gain a kind of shown in Fig. 1 Road.
Fig. 3 a, Fig. 3 b are that a kind of quasi- Z-source inverter of switching boost type high-gain shown in Fig. 1 is straight in its three phase inverter bridge respectively Equivalent circuit diagram when logical and when non-straight-through.
Fig. 4 a is sensitizing factor curve and the switched inductors Z-source inverter of circuit of the present invention, based on two grades of expansions of diode Quasi- Z-source inverter and traditional Z-source inverter sensitizing factor curve comparison diagram.
Fig. 4 b is the graph of relation of the index of modulation M and AC output voltage gain G of four kinds of inverters.
Fig. 4 c is the comparison diagram of four kinds of inverter breaker in middle device voltage stress.
Fig. 4 d is with Vi=20V, gives circuit direct side of the present invention related with AC as a example straight-through dutycycle D=0.25 The simulation result figure of variable.
Specific embodiment
Above content is explained in detail to technical scheme, concrete to the present invention below in conjunction with accompanying drawing Enforcement is further described.
With reference to Fig. 1, a kind of quasi- Z-source inverter of switching boost type high-gain of the present invention, it includes voltage source, by the The boost switching unit that one inductance, the first diode, the first metal-oxide-semiconductor, the first electric capacity and the second diode are constituted, by the second electricity The first quasi- Z source unit that sense, the second electric capacity, the 3rd electric capacity and the 3rd diode are constituted, by the 3rd inductance, the 4th diode, the Four electric capacity and the second quasi- Z source unit of the 5th electric capacity composition, three phase inverter bridge, output inductor, filter capacitor and load.When The bridge arm direct pass AC load short circuits first metal-oxide-semiconductor S simultaneously of three phase inverter bridge1During conducting, described first diode D1, second Diode D2, the 3rd diode D3With the 4th diode D4It is turned off, the 3rd electric capacity C3With the 4th electric capacity C4 to the 3rd inductance L3Fill Electricity；Described 3rd electric capacity C3With the 5th electric capacity C5To the second inductance L2Charge；Described voltage source ViWith the first electric capacity C1, the second electric capacity C2With the 5th electric capacity C5Together to the first inductance L1Charging energy-storing.Connect into exchange lateral load when the brachium pontis of three phase inverter bridge is non-straight First metal-oxide-semiconductor S simultaneously1During shutoff, described first diode D1, the second diode D2, the 3rd diode D3With the 4th diode D4 It is both turned on, described voltage source ViWith the first inductance L1Give the first electric capacity C respectively1With the 3rd electric capacity C3Charging energy-storing, forms loop； Second inductance L2With the second electric capacity C2Parallel connection, forms loop；3rd inductance L3With the 5th electric capacity C5Formation loop in parallel；Second electricity Sense L2With the 4th electric capacity C4Parallel connection, forms loop.Whole circuit combines boost switching unit and the respective single-stage of quasi- Z source unit Buck characteristic, has higher output voltage gain, and source current is continuous, and load current is continuous, exports with input altogether, and There is not starting current impact in circuit and switching tube opens the current impact of moment.
The concrete connection of circuit of the present invention is as follows：The positive pole of described voltage source is connected with one end of the first inductance；Described The other end of one inductance is connected with the anode of the first diode and the drain electrode of the first metal-oxide-semiconductor respectively；The source electrode of described first metal-oxide-semiconductor It is connected with the anode of the second diode and the negative pole of the first electric capacity respectively；The negative electrode of described first diode respectively with the first electric capacity Positive pole, the anode of the 3rd diode and the second electric capacity negative pole connect；The negative electrode of described 3rd diode is electric with second respectively The negative pole of one end, the positive pole of the 3rd electric capacity and the 4th electric capacity of sense connects；The other end of described second inductance is electric with second respectively The negative pole of the positive pole, the anode of the 4th diode and the 5th electric capacity that hold connects；The negative electrode of described 4th diode is respectively with the 4th One end of the positive pole of electric capacity and the 3rd inductance connects；The other end of described 3rd inductance positive pole and the three-phase with the 5th electric capacity respectively The positive ends of inverter bridge connect；The negative pole of described voltage source respectively with the negative electrode of the second diode, the negative pole of the 3rd electric capacity and The negative polarity end of three phase inverter bridge connects.
Fig. 3 a, Fig. 3 b give the course of work equivalent circuit diagram of circuit of the present invention.Fig. 3 a, Fig. 3 b are that inverter bridge is straight respectively The logical equivalent circuit diagram with the non-straight-through period.In figure solid line represents the part having electric current to flow through in converter, and dotted line represents conversion The part that in device, no current flows through.
The course of work of the present invention is as follows：
Stage 1, such as Fig. 3 a：Bridge arm direct pass AC load short circuits the first metal-oxide-semiconductor S simultaneously when three phase inverter bridge1Conducting When, described first diode D1, the second diode D2, the 3rd diode D3With the 4th diode D4It is turned off, the 3rd electric capacity C3With 4th electric capacity C4 is to the 3rd inductance L3Charge；Described 3rd electric capacity C3With the 5th electric capacity C5To the second inductance L2Charge；Described voltage Source ViWith the first electric capacity C1, the second electric capacity C2With the 5th electric capacity C5Together to the first inductance L1Charging energy-storing.
Stage 2, such as Fig. 3 b：Connect into exchange lateral load the first metal-oxide-semiconductor S simultaneously when the brachium pontis of three phase inverter bridge is non-straight1Close When disconnected, described first diode D1, the second diode D2, the 3rd diode D3With the 4th diode D4It is both turned on, described voltage source ViWith the first inductance L1Give the first electric capacity C respectively1With the 3rd electric capacity C3Charging energy-storing, forms loop；Second inductance L2With the second electricity Hold C2Parallel connection, forms loop；3rd inductance L3With the 5th electric capacity C5Formation loop in parallel；Second inductance L2With the 4th electric capacity C4And Connection, forms loop.
To sum up situation, the first metal-oxide-semiconductor S when inverter bridge leads directly to1Conducting, the first metal-oxide-semiconductor S when inverter bridge is non-straight-through1Close Disconnected.Therefore set the straight-through dutycycle of inverter bridge as D, then the first metal-oxide-semiconductor S1Conducting dutycycle be similarly D, configuration switch cycle For Ts.And set VL1And VL2And VL3It is respectively the first inductance L1, the second inductance L2With the 3rd inductance L3The voltage at two ends, VC1、VC2、 VC3、VC4And VC5It is respectively the first electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3, the 4th electric capacity C4With the 5th electric capacity C5Voltage, VS1For the first metal-oxide-semiconductor S1Voltage between drain electrode and source electrode, VPNFor inversion bridge DC side chain voltage.When inverter enters stable state work After work, draw following voltage relationship derivation.
Stage 1：Inverter bridge leads directly to and (is equivalent to S2Closure) the first metal-oxide-semiconductor S simultaneously1During conducting, corresponding equivalent circuit diagram Shown in 3a, therefore there is equation below：
VL1=Vi+VC1+VC2+VC5(1)
VL2=VC3+VC5(2)
VL3=VC4+VC3(3)
VS1=VPN=0 (4)
The straight-through time of inverter bridge and the first metal-oxide-semiconductor S1The time of conducting is DTs.
Stage 2：Non- the leading directly to of inverter bridge (is equivalent to S2Disconnect) the first metal-oxide-semiconductor S simultaneously1During shutoff, corresponding equivalent circuit As shown in Figure 3 b, therefore there is equation below：
VL1=Vi-VC1(5)
VL2=-VC2(6)
VC1=VC3(7)
VC2=VC4(8)
VL3=-VC5(9)
VS1=VC1(10)
VPN=VC1+VC2+VC5(11)
The non-straight-through time of inverter bridge and the first metal-oxide-semiconductor S1Turn-off time be (1-D) Ts.
Analyzed according to above, to the first inductance L respectively1, the second inductance L2With the 3rd inductance L3With inductance Flux consumption conservation Principle, simultaneous formula (1), formula (2), formula (3), formula (5), formula (6) and formula (9) can obtain：
Vi+DVC5+DVC2=(1-2D) VC1(12)
DVC5+DVC3=(1-D) VC2(13)
DVC2+DVC3=(1-D) VC5(14)
Thus convolution (7), formula (8), the first electric capacity C can be drawn1Voltage VC1, the second electric capacity C2Voltage VC2, the 3rd Electric capacity C3Voltage VC3, the 4th electric capacity C4Voltage VC4With the 5th electric capacity C5Voltage VC5With voltage source ViBetween relational expression divide It is not：
Then the voltage between the drain electrode of the first metal-oxide-semiconductor S1 and source electrode can be obtained by formula (10) is：
Again by formula (11), formula (15) and formula (16), three phase inverter bridge DC-link voltage V can be obtainedPNExpression formula be：
Then sensitizing factor (Boost Factor) B of circuit of the present invention is：
Corresponding AC output voltage gain is：
G=MB=(0～∞) (20)
As shown in Figure 4 a the sensitizing factor curve of circuit of the present invention and switched inductors Z-source inverter, be based on diode two Quasi- Z-source inverter and the sensitizing factor curve comparison diagram of traditional Z-source inverter that level is expanded；In figure includes the liter of circuit of the present invention Pressure factor curve, the sensitizing factor curve of switched inductors Z-source inverter, the quasi- Z-source inverter based on two grades of expansions of diode Sensitizing factor curve, and the sensitizing factor curve of traditional Z-source inverter.As seen from the figure, circuit of the present invention is less than in dutycycle D In the case of 0.29, sensitizing factor B just can reach very big hence it is evident that being higher than the sensitizing factor of other inverter topologies, and Dutycycle D of circuit of the present invention is not over 0.29.
Fig. 4 b is the graph of relation of the index of modulation M and AC output voltage gain G of four kinds of inverters, as seen from the figure In the case of having identical AC output voltage gain G, circuit of the present invention can be used than other three kinds of inverter circuits To bigger index of modulation M, inverter is modulated, and then improves the DC voltage utilization rate of inverter, improve exchange The quality of side output voltage waveforms.
Fig. 4 c is the comparison of four kinds of inverter breaker in middle device voltage stress, opens as seen from the figure in circuit inverter bridge of the present invention The voltage stress closing device will be little than other three kinds of inverter topologies, and then reduces the cost using switching device With.
Fig. 4 d is with Vi=20V, gives circuit direct side of the present invention related with AC as a example straight-through dutycycle D=0.25 The simulation result of variable.During D=0.25, sensitizing factor B=8, inverter bridge DC-link voltage VPN=B*Vi=160V, capacitance voltage VC1=VC3=80V, VC2=VC4=VC5=40V, the voltage V at switch S two endsS=80V.Additionally, giving inductance electricity in Fig. 4 d Stream iL1,iL2And iL3Waveform, AC export phase voltage VphaseWith output line voltage VlineWaveform, and three-phase symmetrical electricity Resistance load both end voltage VRLWaveform.
In sum, circuit of the present invention combines boost switching unit and quasi- Z source unit respective single-stage buck characteristic, There is higher output voltage gain, source current is continuous, load current is continuous, output with input altogether, and does not have startup Dash current and metal-oxide-semiconductor open the dash current of moment.
Above-described embodiment is the present invention preferably embodiment, but embodiments of the present invention are not subject to described embodiment Limit, other any Spirit Essences without departing from the present invention and the change made under principle, modification, replacement, combine, simplify, All should be equivalent substitute mode, be included within protection scope of the present invention.

Claims (3)

1. a kind of quasi- Z-source inverter of switching boost type high-gain is it is characterised in that include voltage source（Vi）, boost switching unit, Surely Z source unit, the second quasi- Z source unit, three phase inverter bridge, output filter capacitor, filter inductance and three phase symmetry load；Described Boost switching unit is by the first inductance（L1）, the first diode（D1）, the first electric capacity（C1）, the first power switch pipe（S1）With Two diodes（D2）Constitute；Described first quasi- Z source unit is by the second inductance（L2）, the second electric capacity（C2）, the 3rd electric capacity（C3）With Three diodes（D3）Constitute；Described second quasi- Z source unit is by the 3rd inductance（L3）, the 4th diode（L4）, the 4th electric capacity（C4）With 5th electric capacity（C5）Constitute.
2. the quasi- Z-source inverter of a kind of switching boost type high-gain according to claim 1 is it is characterised in that described voltage source （Vi）Positive pole and the first inductance（L1）One end connect；Described first inductance（L1）The other end respectively with the first diode （D1）Anode and the first metal-oxide-semiconductor（S1）Drain electrode connect；Described first metal-oxide-semiconductor（S1）Source electrode respectively with the second diode （D2）Anode and the first electric capacity（C1）Negative pole connect；Described first diode（D1）Negative electrode respectively with the first electric capacity（C1） Positive pole, the 3rd diode（D3）Anode and the second electric capacity（C2）Negative pole connect；Described 3rd diode（D3）Negative electrode divide Not with the second inductance（L2）One end, the 3rd electric capacity（C3）Positive pole and the 4th electric capacity（C4）Negative pole connect；Described second inductance （L2）The other end respectively with the second electric capacity（C2）Positive pole, the 4th diode（D4）Anode and the 5th electric capacity（C5）Negative pole Connect；Described 4th diode（D4）Negative electrode respectively with the 4th electric capacity（C4）Positive pole and the 3rd inductance（L3）One end connect； Described 3rd inductance（L3）The other end respectively with the 5th electric capacity（C5）Positive pole and three phase inverter bridge positive ends connect；Institute State voltage source（Vi）Negative pole respectively with the second diode（D2）Negative electrode, the 3rd electric capacity（C3）Negative pole and three phase inverter bridge Negative polarity end connects.
3. a kind of quasi- Z-source inverter of switching boost type high-gain according to claim 1 is it is characterised in that work as three-phase inversion Bridge arm direct pass AC load short circuits first metal-oxide-semiconductor simultaneously of bridge（S1）During conducting, described first diode（D1）, the two or two pole Pipe（D2）, the 3rd diode（D3）With the 4th diode（D4）It is turned off, the 3rd electric capacity（C3）With the 4th electric capacity（C4）To the 3rd electricity Sense（L3）Charge；Described 3rd electric capacity（C3）With the 5th electric capacity（C5）To the second inductance（L2）Charge；Described voltage source（Vi）With One electric capacity（C1）, the second electric capacity（C2）With the 5th electric capacity（C5）Together to the first inductance（L1）Charging energy-storing；When three phase inverter bridge Brachium pontis is non-straight to be connected into exchange lateral load the first metal-oxide-semiconductor simultaneously（S1）During shutoff, described first diode（D1）, the second diode （D2）, the 3rd diode（D3）With the 4th diode（D4）It is both turned on, described voltage source（Vi）With the first inductance（L1）Give the respectively One electric capacity（C1）With the 3rd electric capacity（C3）Charging energy-storing, forms loop；Second inductance（L2）With the second electric capacity（C2）Parallel connection, forms Loop；3rd inductance（L3）With the 5th electric capacity（C5）Formation loop in parallel；Second inductance（L2）With the 4th electric capacity（C4）Parallel connection, shape Become loop.
CN201610508665.2A 2016-06-30 2016-06-30 Switch boost type high-gain quasi-Z-source inverter Pending CN106452152A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107612325A (en) * 2017-08-29 2018-01-19 天津大学 One kind switchs the quasi- wide gain two-way DC converter in Z sources
CN114583990A (en) * 2022-05-07 2022-06-03 深圳古瑞瓦特新能源有限公司 Wide-range gain single-phase inverter, control method and three-phase inverter
CN114759792A (en) * 2022-05-11 2022-07-15 南京航空航天大学 Single-stage high-gain modular multilevel resonant direct-current boost converter
CN116155102A (en) * 2023-04-20 2023-05-23 深圳市恒运昌真空技术有限公司 High-gain converter

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107612325A (en) * 2017-08-29 2018-01-19 天津大学 One kind switchs the quasi- wide gain two-way DC converter in Z sources
CN114583990A (en) * 2022-05-07 2022-06-03 深圳古瑞瓦特新能源有限公司 Wide-range gain single-phase inverter, control method and three-phase inverter
CN114583990B (en) * 2022-05-07 2022-08-16 深圳古瑞瓦特新能源有限公司 High-gain single-phase inverter, control method and three-phase inverter
CN114759792A (en) * 2022-05-11 2022-07-15 南京航空航天大学 Single-stage high-gain modular multilevel resonant direct-current boost converter
CN116155102A (en) * 2023-04-20 2023-05-23 深圳市恒运昌真空技术有限公司 High-gain converter
CN116155102B (en) * 2023-04-20 2023-07-25 深圳市恒运昌真空技术有限公司 High-gain converter

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