CN105924175A - Fine-grained boron carbide ceramic and preparation method thereof - Google Patents
Fine-grained boron carbide ceramic and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a fine-grained boron carbide ceramic and a preparation method thereof, belonging to the technical field of ceramic materials. The fine-grained boron carbide ceramic has an average grain size less than 1 [mu]m, a relative density of 98% or above, a Vickers hardness of 38 GPa or above, and a fracture toughness of 4.9 MPa.m1/2 or above. The preparation method for the fine-grained boron carbide ceramic is as follows: with boron powder and carbon powder as raw materials, the powder obtained by chemical-mechanical treatment is prepared into a blank; the exterior of the blank is coated with a reaction raw material of a self-propagating reaction system; and through a self-propagating high-temperature rapid pressure sintering technology, the fine-grained boron carbide ceramic is obtained. The boron carbide ceramic prepared by using the method provided by the invention has the advantages of small grain size, and high compactness, toughness and hardness; meanwhile, the process route in the invention has the advantages of simple process, high yield, low consumption of time, low requirement for particle size of raw materials, low cost, and facilitation to industrial production.
Description
Technical field
The present invention relates to boron carbide ceramics material and preparation method thereof, particularly relate to a kind of fine crystalline carbon boron pottery and preparation side thereof
Method, belongs to technical field of ceramic material.
Background technology
Boron carbide ceramics is a kind of important engineering material, except have structural ceramics Common advantages (wear-resistant, anticorrosive,
High temperature resistant etc.) outward, its advantage highlighted the most is exactly to have the hardness of superelevation and low density simultaneously.At room temperature, boron carbide
Hardness be only second to diamond and cubic boron nitride and occupy the 3rd, but, at high temperature (more than 1300 DEG C), boron carbide
Hardness can exceed diamond and cubic boron nitride and become first.Additionally, the density of boron carbide only has 2.52g/cm3, only steel
About the 1/3 of ferrum, less than most of ceramic materials.The ultrahigh hardness of boron carbide and Lightness make it in modern industry, aviation boat
It and national defense construction field has highly important application prospect.But, owing in boron carbide crystal, covalent bond content is up to
93.9%, and its plasticity is poor, and crystal boundary moving resistance is big, and during solid-state, surface tension is the least, and therefore the fracture of boron carbide ceramics is tough
Property relatively low, densification sintering temperature is too high, though use pressureless sintering the high temperature more than 2200 DEG C also be difficult to obtain consistency
Boron carbide block more than 95%, this is the preparation of boron carbide ceramics and application brings extreme difficulties.
For ceramic material, the current techique means that raising fracture toughness, lower sintering temperature are taked are that refiner material is brilliant
Grain, interpolation sintering aid and second-phase dispersion reinforcement technique.But, for boron carbide ceramics, current research mostly collects
In by add sintering aid or use second-phase dispersion distribution technique prepare boron carbide base composite ceramic with improve its fracture toughness,
Reduce sintering temperature.But, in composite ceramics, owing to the hardness of the second phase is both less than boron carbide, density is both greater than boron carbide,
Therefore the introducing of the second phase can reduce the hardness of boron carbide ceramics, destroys the Lightness of boron carbide ceramics simultaneously, therefore, prepares carbon
Change boron composite ceramics and can sacrifice some excellent properties of boron carbide one-component ceramic.Although single-phase boron carbide ceramics material has it can not
The advantage substituted, but less with the research improving its fracture toughness to using refinement boron carbide crystal grain mode at present, and reason is:
1, the acquisition of thin boron carbide powder is the most difficult, and the particle diameter of the boron carbide powder that general industry produces, more than 3 μm, uses this
Powder body is sintered, it is impossible to prepare the size of microcrystal boron carbide ceramics less than 3 μm；Although the 2 advanced flouring technologies of employing can
To prepare the boron carbide powder of particle diameter less (less than 1 μm), but its high cost, yield and little, laboratory can only be used
Research；Even if 3 employing small particle boron carbide powders are raw material, due to pure boron carbide material sintering densification difficulty, common
Sintering process (pressureless sintering, hot pressed sintering, discharge plasma sintering etc.) needs high sintering temperature, causes boron carbide brilliant
Grain length is big, still cannot obtain fine crystalline carbon boron pottery.Therefore, the report preparing pure boron carbide ceramics is less.At present, although
Have a relevant report preparing on a small quantity pure boron carbide ceramics, but its prepared Sinter of Boron Carbide Ceramics temperature is higher, crystal grain relatively
Greatly, it is impossible to obtain thin brilliant pure boron carbide ceramics, thus the fracture toughness of boron carbide ceramics cannot be improved.
Summary of the invention
The technical problem to be solved is the deficiency existed for above-mentioned prior art and provides a kind of fine crystalline carbon boron pottery
And preparation method thereof, this preparation technology is simple, and efficiency is high and consumes energy low, prepared fine crystalline carbon boron pottery average grain size
Less than 1 μm, and have high rigidity and higher fracture toughness.
The present invention solves that the technical scheme that problem set forth above is used is:
A kind of fine crystalline carbon boron pottery, its average grain size is less than 1 μm, and relative density is more than 98%, and Vickers hardness is
More than 38GPa, fracture toughness is 4.9MPa.m1/2Above.
The preparation method of above-mentioned fine crystalline carbon boron pottery, it is with boron powder and carbon dust as raw material, gained after mechanochemistry processes
Amorphous B-C nano-powder makes idiosome, and described green external wraps up the reaction raw materials of self-propagating system, fast by self propagating high temperature
Speed pressure sintering technology obtains fine crystalline carbon boron pottery..
Preferably, the preparation method of described fine crystalline carbon boron pottery, it is with boron powder and carbon dust as raw material, at mechanochemistry
After reason, gained amorphous B-C nano-powder makes idiosome, and the reaction raw materials of described green external parcel self-propagating system, by causing
Self-propagating reaction supply amorphous B-C nano-powder changes generation boron carbide nanocrystalline institute calorific requirement, is then passed through pressure, heat treatment
Thus obtain fine crystalline carbon boron pottery.
Preferably, the preparation method of described fine crystalline carbon boron pottery, comprise the steps:
1) by weight percentage, weigh boron powder 78-79%, carbon dust 21-22% is raw material, after carrying out mechanochemistry process, obtain
Obtain amorphous B-C nano-powder；
2) gained amorphous B-C nano-powder is pressed into interior embryo；
3) by weight percentage, weighing carbon dust 18%-20%, titanium valve 72%-80%, carbonized titanium powder 0-10%, mixing is all
Even, obtain the material powder of self-propagating system；
4) by step 2) step 3 in embryo outer wrap in gained) material powder of gained self-propagating system be pressed into multiple embryo,
Then ignite self-propagating reaction, and reaction presses after terminating immediately, and (self-propagating reaction combines with pressure, is self-propagating high in compacting
Temperature Quick-pressing sintering technology), until temperature discharges pressure after being less than 1200 DEG C, after cooling, i.e. obtain boron carbide block materials；
5) by step 4) gained boron carbide block materials carries out heat treatment, it is thus achieved that fine crystalline carbon boron pottery.
By such scheme, step 1) described in mechanochemical treatment step use ball-milling technology.Specifically, ball-milling technology is:
Ball material mass ratio is 20:1-40:1, and rotational speed of ball-mill is 300-500rpm, Ball-milling Time 30-50h, and whole mechanical milling process is in inertia
Atmosphere is carried out.
By such scheme, described step 1) and step 2) between also include washing and be dried step.Preferably, described
Washing includes pickling and washing；Described is dried as vacuum drying.Specifically, described pickling is: at 40 DEG C, hydrochloric acid is molten
Sucking filtration after stirring in liquid；Described washing, for dissolving in deionized water, stirring, then carries out sucking filtration.
By such scheme, step 2) described in embryo and multiple embryo the most cylindric, both volume relationships are: multiple embryo height is
6-8 times of interior embryo height, 6-10 times of diameter.Such as, interior embryo is the cylinder of diameter 1-2cm, highly 0.5-1cm, multiple
Embryo be height be 6cm, a diameter of 10cm, cylinder, now a multiple embryo can uniformly place interior embryo 1-4.
By such scheme, step 2) described in suppress and the most first use the axial compressive force of 15-30MPa to suppress, then use 150-
300MPa carries out isostatic cool pressing process.
By such scheme, step 3) described in carbon dust, the preferred 1:4 of titanium valve mass ratio.
By such scheme, step 4) in, step 2) gained idiosome and step 3) gained self-propagating system material powder it
Between have wall.Preferably, described wall is graphite paper and or boron nitride.
By such scheme, step 4) described in press the axial compressive force that pressure is 150-200MPa of compacting, until reactant
Being release pressure after temperature is less than 1200 DEG C, the dwell time is usually 40-60s.
By such scheme, step 5) in, described heat treatment temperature is 1400-1600 DEG C, and the time is 1-2h.
By such scheme, described step 1) in the particle diameter of boron powder be 1-75 μm, purity is more than 98%, and the particle diameter of carbon dust is
0.1-3 μm, purity is more than 99%.
The ultimate principle of the present invention is as follows:
First, raw material carbon dust and boron powder simple substance powder body are after mechanochemical process, it is possible to synthesis amorphous state, highly active B-C
Nano-powder.The noncrystalline state being in instability of this nano-powder, has sintering activity height, can Spontaneous conversion be that boron carbide is brilliant
The trend of body.
Then, the present invention uses self propagating high temperature Quick-pressing sintering technology, carries out amorphous B-C nano-powder idiosome quickly
Sintering, i.e. with carbon-titanium system for self-propagating combustion system, carbon-titanium system has reaction temperature height, and (maximum temperature is up to 3000 DEG C
Above), the advantage energy of persistent period short (keeping about 50s 2200 DEG C of temperatures above), and can be by carbon-titanium system
Addition titanium carbide powder is with diluting reaction system, thus reaches reaction temperature and the purpose in response time.Additionally, should be from climing
Prolong and reducing atmosphere after combustion system ignites, can be produced, under high temperature reducing atmospheres, it is ensured that boron carbide sample can be not oxidized.
During self-propagating reaction, heating rate is up to 3000 DEG C/more than min, and in temperature-rise period, amorphous B-C nano-powder is fast
Speed is transformed into boron carbide nanocrystal, and reaction moment completes.Under high temperature, built-in boron carbide just base is in red soft state, this
Time, quickly apply the high pressure of a 150-200MPa, and continue about 1 minute, make boron carbide sample densification, thus one
Secondary property completes synthesis and the densification process of boron carbide ceramics.Fast by heating rate, temperature retention time is short, it is possible to effectively suppress sintering
During the carrying out of flooding mechanism, the boron carbide nanocrystal of formation has little time to grow up, and has just been pressed into ceramic block by high pressure,
Its main densification Mechanism is no longer mass transfer but red heat state sample under high pressure produces Grain Boundary Sliding and plastic deformation,
Thus the crystal grain of sample prepared by this technique substantially will not be grown up in sintering process, so that boron carbide keeps less crystal grain chi
Very little.
After self propagating high temperature Quick-pressing sintering, although boron carbide ceramics is the most densified, but owing to it is quick by amorphous powder
Changing, the temperature-rise period being exceedingly fast and extremely short sintering process cause the crystallinity of its crystal poorly, affect its mechanicalness
Can, accordingly, it would be desirable to it is carried out follow-up heat treatment, treatment temperature at 1400-1600 DEG C, the heat treatment temperature of this scope
Its crystal structure degree can be made perfect, but be not result in that its crystal grain is grown up, therefore, the boron carbide ceramics obtained has thin crystalline substance
The crystallinity that particle size is become reconciled, and aplitic texture is conducive to improving fracture toughness and the hardness of boron carbide.
Compared with prior art, beneficial effects of the present invention is as follows:
First, the present invention has thin brilliant pure boron carbide ceramics without using thin boron carbide powder just can prepare, and this pottery is brilliant
Particle size is less than 1 μm, and degree of compaction is high, hardness is high, fracture toughness is preferable.
Second, the present invention uses mechanochemical reaction to prepare amorphous B-C nano-powder, to ensure at self propagating high temperature Quick-pressing
Realize the synthesis of nano boron carbide crystal grain in sintering process, a closely knit step completes, and compared with conventional sintering means, has intensification speed
Degree is fast, and sintering time is short, and consume energy low advantage.
3rd, the material powder B powder of the present invention and C need to be through mechanochemical process, the therefore original size requirement to raw material
Relatively low, it is possible to decrease production cost, and the purity and particle diameter to self-propagating system powder body has no special requirements, and therefore can reduce producing into
This.
4th, present invention process is simple, and efficiency is high, manufacturing cycle is short, is advantageously implemented industrialized mass.
Accompanying drawing explanation
Fig. 1 is the embodiment of the present invention 1 gained amorphous B-C nano-powder and the XRD figure of boron carbide, and wherein, (a) is machinery
Chemical technology obtains amorphous B-C nano-powder；B boron carbide block materials that () self propagating high temperature Quick-pressing sintering obtains；
C fine crystalline carbon boron pottery that () obtains after Overheating Treatment.
Fig. 2 is the embodiment of the present invention 2 gained fine crystalline carbon boron pottery section SEM figure.
Fig. 3 is the polishing of the embodiment of the present invention 2 gained fine crystalline carbon boron pottery, etched surface SEM figure.
Detailed description of the invention
In order to be more fully understood that the present invention, it is further elucidated with present disclosure below in conjunction with embodiment, but present disclosure is not
It is limited only to the following examples.
Embodiment 1
A kind of preparation method of fine crystalline carbon boron pottery, it comprises the following steps:
1) the B-C nano-powder of amorphous disordered structure is prepared
By weight percentage, by weighing 78% boron powder (particle diameter is 75 μm, and purity is 99%) and 22% carbon dust (particle diameter
Being 3 μm, purity is 99%) put in the ball grinder of planetary ball mill and carry out mechanochemistry process, ball grinder is taken out very
Being filled with argon after sky to process, ball grinder and ball material are rustless steel, and ball, material mass ratio are 30:1, and rotational speed of ball-mill is 500
Rpm, Ball-milling Time is 30h, it is thus achieved that amorphous B-C nano-powder；
The amorphous B-C nano-powder obtained is used at 40 DEG C in the hydrochloric acid solution of 2mol/L and stirs 6h, then carry out sucking filtration,
The powder body leached is dissolved the most in deionized water, after sucking filtration, is placed in 24h in 60 DEG C of vacuum drying ovens, i.e. obtains the non-of purification
Brilliant B-C nano-powder；
2) embryo in preparation
Amorphous B-C nano-powder is pressed into the disk of diameter 1cm, highly 0.5cm, then under the axial compressive force of 20MPa
Disk is put into the cold isostatic cool pressing process waiting and carrying out 200MPa, 5min in press, it is thus achieved that the nanocrystalline interior embryo of amorphous B-C；
3) self-propagating system material powder is prepared
By weight percentage, weigh carbon dust 18%, titanium valve 72%, carbonized titanium powder 10%, after mix homogeneously, obtain self-propagating
System material powder；
4) self propagating high temperature Quick-pressing sintering
By step 2) the interior embryo outer layer that obtains superscribes graphite paper and boron nitride powder successively, then 4 interior embryos uniformly placed
In step 3) in the self-propagating system material powder of gained, it is pressed into height for 6cm, the multiple embryo of a diameter of 10cm, by institute
Stating multiple idiosome to be positioned in self propagating high temperature Quick-pressing equipment, ignite self-propagating reaction, and apply 150MPa's when 60s
Axial compressive force, after pressurize 40s, temperature is less than 1200 DEG C, natural cooling after release pressure, obtains boron carbide block materials；
5) boron carbide block heat treatment
By step 4) the boron carbide block materials that obtains puts in the high temperature furnace of argon gas atmosphere and carries out heat treatment, and heat treatment temperature is
1400 DEG C, the time is 2h, it is thus achieved that fine crystalline carbon boron pottery.
The performance of the present embodiment gained fine crystalline carbon boron ceramics sample is as follows: relative density 99.1%, Vickers hardness 38.1GPa, fracture
Toughness 4.96MPa.m1/2, average grain size 0.89 μm.
Embodiment 2
A kind of preparation method of fine crystalline carbon boron pottery, it comprises the following steps:
1) the B-C nano-powder of amorphous disordered structure is prepared
By weight percentage, by weighing 79% boron powder (particle diameter is 1 μm, and purity is 98%) and 21% carbon dust (particle diameter
Being 0.1 μm, purity is 99%) put in the ball grinder of planetary ball mill and carry out mechanochemistry process, ball grinder is taken out
Being filled with argon after vacuum to process, ball grinder and ball material are rustless steel, and ball, material mass ratio are 30:1, and rotational speed of ball-mill is 400
Rpm, Ball-milling Time is 50h, it is thus achieved that amorphous B-C nano-powder；
The amorphous B-C nano-powder obtained is used at 40 DEG C in the hydrochloric acid solution of 2mol/L and stirs 6h, then carry out sucking filtration,
The powder body leached is dissolved the most in deionized water, after sucking filtration, is placed in 24h in 60 DEG C of vacuum drying ovens, i.e. obtains the non-of purification
Brilliant B-C nano-powder；
2) embryo in preparation
Under the axial compressive force of 20MPa, amorphous B-C nano-powder is pressed into the disk of diameter 2cm, highly 1cm, then will
Disk puts into the cold isostatic cool pressing process waiting and carrying out 200MPa, 5min in press, it is thus achieved that the nanocrystalline interior embryo of amorphous B-C；
3) self-propagating system material powder is prepared
By weight percentage, weigh carbon dust 20%, titanium valve 80%, after mix homogeneously, obtain self-propagating system material powder；
4) self propagating high temperature Quick-pressing sintering
By step 2) the interior embryo outer layer that obtains superscribes graphite paper and boron nitride powder successively, then 1 interior embryo uniformly placed
In step 3) in the self-propagating system material powder of gained, it is pressed into height for 6cm, the multiple embryo of a diameter of 10cm, by institute
Stating multiple idiosome to be positioned in self propagating high temperature Quick-pressing equipment, ignite self-propagating reaction, and apply 200MPa's when 40s
Axial compressive force, pressurize 60s temperature is less than 1200 DEG C, natural cooling after release pressure, obtains boron carbide block materials；
5) boron carbide block heat treatment
By step 4) the boron carbide block materials that obtains puts in the high temperature furnace of argon gas atmosphere and carries out heat treatment, and heat treatment temperature is
1600 DEG C, the time is 1h, it is thus achieved that fine crystalline carbon boron pottery.
The performance of the present embodiment gained fine crystalline carbon boron ceramics sample is as follows: relative density 99.6%, Vickers hardness 39.8GPa, fracture
Toughness 4.92MPa.m1/2, average grain size 0.87 μm.
Embodiment 3
The present embodiment is with the difference of embodiment 2: step 3) in, carbon dust 19%, titanium valve 76%, carbonized titanium powder
5%.
Embodiment 4
The present embodiment is with the difference of embodiment 2: step 3) in, carbon dust 18%, titanium valve 72%, carbonized titanium powder
10%.
Relative density, Vickers hardness, fracture toughness and the crystallite dimension of the fine crystalline carbon boron pottery prepared by embodiment of the present invention 2-4 are such as
Shown in table 1:
Table 1 fine crystalline carbon boron pottery properties
The feature specifically introducing fine crystalline carbon boron ceramic material prepared by the present invention below in conjunction with legend (includes relative density, Vickers
Hardness, fracture toughness and average grain size).
By Fig. 1 (a) it can be seen that the present invention is with boron powder and carbon dust as raw material, prepare amorphous B-C by mechanochemical process
The XRD spectra of nano-powder is a smooth curve, illustrates after ball milling, and material powder defines unformed non-
Crystalline flour body, and this powder body does not comprise crystalline silicon carbide boron thing phase.At 15-25 °, in the range of 30-40 °, diffraction spectrogram occurs
One peak bag the mildest, and this scope characteristic peak mutually main with boron carbide thing is corresponding, although illustrating that powder body is formed without
Boron carbide crystal, but define distortion B-C key, it is the mixed powder transitional face to boron carbide crystal.And from Fig. 1 (b)
It can be seen that spectrogram comprises only the characteristic peak of boron carbide thing phase, illustrate amorphous powder after self-propagating high-pressure sinter, shape
Become pure boron carbide thing phase.But, the diffraction maximum that Fig. 1 (b) represents is more weak compared with Fig. 1 (c), illustrates only by from climing
After prolonging high-pressure sinter, the crystallinity of boron carbide sample is poor, and can significantly improve its crystal knot through subsequent heat treatment technique
Crystalline substance.
As seen from Figure 2, the fine crystalline carbon boron ceramics sample that prepared by the present invention comprises only and minimal amount of is smaller in size than 100nm
Minute pores, sample is almost completely fine and close.
Fig. 3 is it can be seen that the crystallite dimension minimum of fine crystalline carbon boron ceramic material sample prepared by the present invention only has 0.3 μm left
The right side, largest grain size is also less than 1.5 μm, and its average particle diameter size only has 0.87 μm, it is achieved that thin brilliant target.
As can be seen from Table 1, the boron carbide ceramics that the present invention prepares has high solidity (> 98%), high Vickers hardness
(> 38GPa), higher fracture toughness (> 4.9MPa.m1/2) and little crystallite dimension (average grain size < 1 μm), say
The bright present invention has bigger advantage to preparing fine crystalline carbon boron pottery；In addition, it could be seen that along with diluent in self-propagating system
The increase of titanium carbide content, the relative density of pottery and Vickers hardness reduce, and fracture toughness increases, and average grain size
Rule without significant change.This is that the increase of diluent can reduce reaction owing to titanium carbide is a kind of diluent in self-propagating system
The reaction temperature of system and persistent period, the partial properties of target sample can be regulated by changing the content of diluent, but,
The content of titanium carbide should not be the highest, it is impossible to more than 10%.
The above is only the preferred embodiment of the present invention, and cited each raw material can realize the present invention, each raw material upper and lower
Limit value and its interval value can realize the present invention, the bound of present invention process parameter (such as proportioning, temperature, time etc.)
Value and its interval value can realize the present invention, embodiment numerous to list herein.It should be pointed out that, for this area is common
For technical staff, without departing from the concept of the premise of the invention, it is also possible to make some modifications and variations, these all belong to
In protection scope of the present invention.
Claims (10)
1. a fine crystalline carbon boron pottery, it is characterised in that its average grain size is less than 1 μm.
2. the preparation method of fine crystalline carbon boron pottery, it is characterised in that with boron powder and carbon dust as raw material, through mechanochemistry
After process, gained amorphous B-C nano-powder makes idiosome, and the reaction raw materials of described green external parcel self-propagating system, by certainly
Spread high temperature Quick-pressing sintering technology and obtain thin brilliant pure boron carbide ceramics.
3. the preparation method of fine crystalline carbon boron pottery, it is characterised in that with boron powder and carbon dust as raw material, through mechanochemistry
After process, gained amorphous B-C nano-powder makes idiosome, and the reaction raw materials of described green external parcel self-propagating system, by drawing
Send out self-propagating reaction supply amorphous B-C nano-powder and change generation boron carbide nanocrystalline institute calorific requirement, be then passed through at pressure, heat
Manage thus obtain thin brilliant pure boron carbide ceramics.
4. the preparation method of a fine crystalline carbon boron pottery, it is characterised in that comprise the steps:
1) by weight percentage, weigh boron powder 78-79%, carbon dust 21-22% is raw material, after carrying out mechanochemistry process, obtain
Obtain amorphous B-C nano-powder；
2) gained amorphous B-C nano-powder is pressed into interior embryo；
3) by weight percentage, weighing carbon dust 18%-20%, titanium valve 72%-80%, carbonized titanium powder 0-10%, mixing is all
Even, obtain the material powder of self-propagating system；
4) by step 2) step 3 in embryo outer wrap in gained) material powder of gained self-propagating system be pressed into multiple embryo,
Then ignite self-propagating reaction, reacts the compacting that presses immediately after terminating, until release is pressed after temperature of reaction system is less than 1200 DEG C
Power, i.e. obtains boron carbide block materials after cooling；
5) by step 4) gained boron carbide block materials carries out heat treatment, it is thus achieved that fine crystalline carbon boron pottery.
A kind of fine crystalline carbon boron the most according to claim 4 pottery preparation method, it is characterised in that step 1) in institute
Stating mechanochemical treatment step and use ball-milling technology, ball-milling technology is: ball material mass ratio is 20:1-40:1, and rotational speed of ball-mill is
300-500rpm, Ball-milling Time 30-50h, whole mechanical milling process is carried out in an inert atmosphere.
A kind of fine crystalline carbon boron the most according to claim 4 pottery preparation method, it is characterised in that step 2) in institute
Stating compacting first uses the axial compressive force of 15-30MPa to suppress, then uses 150-300MPa to carry out isostatic cool pressing process.
The preparation method of a kind of fine crystalline carbon boron the most according to claim 4 pottery, it is characterised in that step 4) in,
Step 2) gained idiosome and step 3) gained self-propagating system material powder between to have wall, described wall be graphite
Paper and or boron nitride.
The preparation method of a kind of fine crystalline carbon boron the most according to claim 4 pottery, it is characterised in that described interior embryo is with multiple
Embryo is cylindric, and both volume relationships are: multiple embryo height is 6-8 times of interior embryo height, 6-10 times of diameter.
The preparation method of a kind of fine crystalline carbon boron the most according to claim 4 pottery, it is characterised in that step 4) in,
The axial compressive force that pressure is 150-200MPa of pressure compacting；Step 5) in, described heat treatment temperature is 1400-1600 DEG C,
Time is 1-2h.
The preparation method of a kind of fine crystalline carbon boron the most according to claim 4 pottery, it is characterised in that described step 1)
The particle diameter of middle boron powder is 1-75 μm, and purity is more than 98%, and the particle diameter of carbon dust is 0.1-3 μm, and purity is more than 99%.
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| CN107827464A (en) * | 2017-12-15 | 2018-03-23 | 中国科学院理化技术研究所 | A kind of method that conbustion synthesis prepares ZrTiCB quaternary ceramic powders |
| CN108950535A (en) * | 2018-06-29 | 2018-12-07 | 武汉科技大学 | A kind of preparation method of high-frequency induction auxiliary self-spreading titanium carbide base composite coating |
| CN111116203A (en) * | 2020-02-28 | 2020-05-08 | 中国工程物理研究院流体物理研究所 | Preparation method of high-density nano boron carbide ceramic material |
| EP4223694A1 (en) * | 2022-02-07 | 2023-08-09 | Akademia Gorniczo-Hutnicza im. Stanislawa Staszica w Krakowie | Method of obtaining boron carbide nanoparticles |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107827464A (en) * | 2017-12-15 | 2018-03-23 | 中国科学院理化技术研究所 | A kind of method that conbustion synthesis prepares ZrTiCB quaternary ceramic powders |
| CN108950535A (en) * | 2018-06-29 | 2018-12-07 | 武汉科技大学 | A kind of preparation method of high-frequency induction auxiliary self-spreading titanium carbide base composite coating |
| CN108950535B (en) * | 2018-06-29 | 2020-08-04 | 武汉科技大学 | Preparation method of high-frequency induction assisted self-propagating titanium carbide-based composite coating |
| CN111116203A (en) * | 2020-02-28 | 2020-05-08 | 中国工程物理研究院流体物理研究所 | Preparation method of high-density nano boron carbide ceramic material |
| CN111116203B (en) * | 2020-02-28 | 2022-01-21 | 中国工程物理研究院流体物理研究所 | Preparation method of high-density nano boron carbide ceramic material |
| EP4223694A1 (en) * | 2022-02-07 | 2023-08-09 | Akademia Gorniczo-Hutnicza im. Stanislawa Staszica w Krakowie | Method of obtaining boron carbide nanoparticles |
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