CN105890827A - Capacitive pressure sensor and manufacturing method thereof - Google Patents
Capacitive pressure sensor and manufacturing method thereof Download PDFInfo
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- CN105890827A CN105890827A CN201610031110.3A CN201610031110A CN105890827A CN 105890827 A CN105890827 A CN 105890827A CN 201610031110 A CN201610031110 A CN 201610031110A CN 105890827 A CN105890827 A CN 105890827A
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- groove
- substrate
- free standing
- structure film
- standing structure
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
- G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
Abstract
The invention discloses a capacitive pressure sensor and a manufacturing method thereof. The method comprises the following steps: forming a cavity in a substrate and a suspended thin film arranged above the cavity, wherein the suspended thin film and the substrate form first grooves therebetween, and are connected through a first groove interval structure; carrying out electrical isolation processing to form a surface electrical isolation layer; forming a mask layer on the surface electrical isolation layer; carrying out pattern etching on the mask layer and the surface electrical isolation layer to form second grooves above the suspended thin film and in the substrate respectively; forming a conductive layer, which fills and covers the second grooves; etching the conductive layer and the mask layer to form electrical isolation trenches; depositing an isolation layer and etching the isolation layer to form third grooves above the suspended thin film and above the substrate respectively; and filling and covering the third grooves above the suspended thin film and above the substrate with a first electrode and a second electrode respectively. The effects of simple technological process, preventing adhesion phenomenon and high reliability are realized.
Description
Technical field
The present embodiments relate to technical field of manufacturing semiconductors, particularly relate to a kind of capacitance pressure transducer
And its manufacture method.
Background technology
Produce capacitive MEMS sensor at present and generally use the surface micromachined work with sacrifice layer
Skill.Surface micromachined technique contains sacrifice layer, needs to use wet etch techniques, uses wet etching skill
The capacitance type sensor preparation technology process CIMS that art obtains is complicated, and uses this technology to be susceptible to adhere to now
As, causing component failure, reliability is relatively low.
Summary of the invention
The present invention provides a kind of capacitance pressure transducer and manufacture method thereof, it is achieved that the letter of preparation technology flow process
Single and can avoid the effect of adhesion, reliability is high.
First aspect, embodiments provides the manufacture method of a kind of capacitance pressure transducer, including:
Form cavity in the substrate and be positioned at the free standing structure film above cavity, wherein, between free standing structure film and substrate
Form the first groove, and connected by the first groove interstitial structure；
Carry out electric isolution process, form surface electricity isolated layer at free standing structure film surface and substrate surface, and make the
One groove interstitial structure insulating；
Forming mask layer, wherein, the first groove is sealed by mask layer；
Graphical etching mask layer and surface electricity isolated layer, formed above free standing structure film and on substrate respectively
Second groove；
Form conductive layer, fill and cover the second groove；
Graphical etching conductive layer and mask layer, form electric isolution groove；
Depositing insulating layer, and graphical etching insulating layer in electric isolution trench region, formed respectively and be positioned at
The 3rd groove above free standing structure film and above substrate；
Form the first electrode and the second electrode, fill covering free standing structure film respectively with the first electrode and the second electrode
The 3rd groove corresponding above top and substrate.
Second aspect, the embodiment of the present invention additionally provides a kind of capacitance pressure transducer, this pressure transducer
Any embodiment capacitance pressure transducer manufacture method of the present invention is used to be fabricated by.
The technical scheme that the present invention provides, by formed in the substrate cavity and be positioned at above cavity unsettled thin
Film, wherein, is formed the first groove, and is connected by the first groove interstitial structure between free standing structure film and substrate；
Carry out electric isolution process, form surface electricity isolated layer at free standing structure film surface and substrate surface, and make first recessed
Groove interstitial structure insulating；Forming mask layer, wherein, the first groove is sealed by mask layer；Graphical etching
Mask layer and surface electricity isolated layer, form the second groove respectively above free standing structure film and on substrate；Formed
Conductive layer, fills and covers the second groove；Graphical etching conductive layer and mask layer, form electric isolution groove；
Depositing insulating layer, and graphical etching insulating layer in electric isolution trench region, formed respectively and be positioned at unsettled
The 3rd groove above thin film and above substrate；Form the first electrode and the second electrode, with the first electrode and
Second electrode is filled respectively and is covered above free standing structure film and the 3rd groove corresponding above substrate.Solve existing
There is the capacitance type sensor workflow obtained with wet etch techniques in technology more complicated, and use this skill
Art is susceptible to adhesion, and reliability is relatively low, it is achieved that preparation technology flow process is simple and can avoid gluing
Phenomenon, the effect that reliability is high.
Accompanying drawing explanation
The flow chart of the manufacture method of a kind of capacitance pressure transducer that Fig. 1 provides for the embodiment of the present invention one；
Fig. 2 a is the top view that the embodiment of the present invention one step S110 is corresponding；
Fig. 2 b is the profile in A1A2 direction along Fig. 2 a；
Fig. 2 c is the top view that the embodiment of the present invention one step S120 is corresponding；
Fig. 2 d is the profile in A1A2 direction along Fig. 2 c；
Fig. 2 e is the profile that the embodiment of the present invention one step S130 is corresponding；
Fig. 2 f is the top view that the embodiment of the present invention one step S140 is corresponding；
Fig. 2 g is the profile in A1A3 direction along Fig. 2 f；
Fig. 2 h is the profile that the embodiment of the present invention one step S150 is corresponding；
Fig. 2 i is the top view that the embodiment of the present invention one step S160 is corresponding；
Fig. 2 j is the profile in A1A3 direction along Fig. 2 i；
Fig. 2 k is the profile that the embodiment of the present invention one step S170 is corresponding；
Fig. 2 l is the profile that the embodiment of the present invention one step S180 is corresponding；
Fig. 2 m is the profile after the embodiment of the present invention one deposits protective layer；
The flow chart of the manufacture method of a kind of capacitance pressure transducer that Fig. 3 provides for the embodiment of the present invention two；
Fig. 4 a be the embodiment of the present invention two step S210 second graph be circular corresponding top view；
Fig. 4 b be the embodiment of the present invention two step S210 second graph be top view corresponding to rectangle；
Fig. 4 c is the profile that the embodiment of the present invention two step S220 is corresponding；
Fig. 4 d is the profile that the embodiment of the present invention two step S230 is corresponding；
Fig. 4 e is the top view that the embodiment of the present invention two step S240 is corresponding；
Fig. 4 f is the profile in A1A2 direction along Fig. 4 e；
The structure top view in a kind of second groove gap that Fig. 4 g provides for the embodiment of the present invention two；
The structure top view in another the second groove gap that Fig. 4 h provides for the embodiment of the present invention two；
The flow chart of the manufacture method of a kind of capacitance pressure transducer that Fig. 5 provides for the embodiment of the present invention three；
Fig. 6 a is the top view that the embodiment of the present invention three step S310 is corresponding；
Fig. 6 b is the profile that the embodiment of the present invention three step S320 is corresponding；
Fig. 6 c is the top view that the embodiment of the present invention three step S330 is corresponding；
Fig. 6 d is the profile in A1A2 direction along Fig. 6 c；
The structure chart of a kind of capacitance pressure transducer that Fig. 7 provides for the embodiment of the present invention four.
Detailed description of the invention
The present invention is described in further detail with embodiment below in conjunction with the accompanying drawings.It is understood that this
Specific embodiment described by place is used only for explaining the present invention, rather than limitation of the invention.The most also need
It is noted that for the ease of describing, accompanying drawing illustrate only part related to the present invention and not all knot
Structure.
Embodiment one
The flow chart of the manufacture method of a kind of capacitance pressure transducer that Fig. 1 provides for the embodiment of the present invention one,
Fig. 2 a is the top view that the embodiment of the present invention one step S110 is corresponding, and Fig. 2 b is A1A2 side along Fig. 2 a
To profile, see Fig. 2 a and Fig. 2 b.
S110, in substrate 10, form cavity 11 and be positioned at the free standing structure film 12 above cavity 11, wherein,
Form the first groove 13 between free standing structure film 12 and substrate 10, and connected by the first groove interstitial structure 14.
Substrate 10 is formed cavity 11, free standing structure film 12 above cavity 11, wherein, free standing structure film 12
And form the first groove 13 between substrate 10, and connected by the first groove interstitial structure 14.Wherein substrate 10
Being preferably silicon wafer substrate, the crystal orientation of silicon wafer substrate can need specifically to distinguish selection according to reality application,
Such as use the silicon wafer substrate in<100>crystal orientation.
Fig. 2 c is the top view that the embodiment of the present invention one step S120 is corresponding, and Fig. 2 d is A1A2 along Fig. 2 c
The profile in direction, sees Fig. 2 c and Fig. 2 d.
S120, carry out electric isolution process, free standing structure film 12 surface and formation surface, substrate 10 surface electricity every
Absciss layer 15, and make the first groove interstitial structure 14 insulating.
The structure forming step S110 carries out electric isolution process, and concrete can be that said structure is carried out heat
Oxidation processes, at free standing structure film 12 surface and formation surface, substrate 10 surface electricity isolated layer 15, and makes first
Groove interstitial structure 14 is completely insulated.
Fig. 2 e is the profile that the embodiment of the present invention one step S130 is corresponding, sees Fig. 2 e.
S130, formation mask layer 16, wherein, the first groove 13 is sealed by mask layer 16.
First groove 13 is sealed by mask layer 16.Mask layer 16 can be such as epitaxially grown polysilicon,
Mask layer 16 covers above whole substrate 10, the step for can be by that may be present for thermal oxide rear surface
Pinhole arrangement seals, and prevents subsequent step from having liquid to flow in cavity 11.
Fig. 2 f is the top view that the embodiment of the present invention one step S140 is corresponding, and Fig. 2 g is A1A3 along Fig. 2 f
The profile in direction, sees Fig. 2 f and Fig. 2 g.
S140, graphical etching mask layer 16 and surface electricity isolated layer 15, respectively above free standing structure film 12
And on substrate 10, form the second groove 17.
Litho pattern, removes the part mask layer 16 above free standing structure film 12 and on substrate 10 and surface electricity
Sealing coat 15, forms the second groove 17, exposed portion free standing structure film 12 and section substrate 10.
Fig. 2 h is the profile that the embodiment of the present invention one step S150 is corresponding, sees Fig. 2 h.
S150, formation conductive layer 18, fill and cover the second groove 17.
The second groove 17 is filled and covered to conductive layer 18.Optional conductive layer 18 can use epitaxially grown
Doped polycrystalline silicon materials.
Fig. 2 i is the top view that the embodiment of the present invention one step S160 is corresponding, and Fig. 2 j is A1A3 along Fig. 2 i
The profile in direction, sees Fig. 2 i and Fig. 2 j.
S160, graphical etching conductive layer 18 and mask layer 16, form electric isolution groove 19.
Etching conductive layer 18 and mask layer 16, surface, exposed portion electricity isolated layer 15, form electric isolution groove
19。
Fig. 2 k is the profile that the embodiment of the present invention one step S170 is corresponding, sees Fig. 2 k.
S170, depositing insulating layer 110, and graphical etching insulating layer 110 in electric isolution groove 19 region,
Formed respectively and be positioned at the 3rd groove 120 above free standing structure film 12 and above substrate 10.
After depositing insulating layer 110, electric isolution groove 19 region in and be positioned at above free standing structure film 12 etch
Insulating barrier 110, exposed portion conductive layer 18, formed and be positioned at the 3rd groove 120 above free standing structure film 12.?
Electric isolution is positioned at etching insulating layer 110 above substrate 10 in groove 19 region, exposed portion conductive layer 18,
Formation is positioned at the 3rd groove 120 above substrate 10, and insulating barrier 110 can be to utilize low-pressure chemical vapor phase deposition
Silica material.
Fig. 2 l is the profile that the embodiment of the present invention one step S180 is corresponding, sees Fig. 2 l.
S180, form the first electrode 131 and the second electrode 132, with the first electrode 131 and the second electrode 132
Fill respectively and cover above free standing structure film 12 and the 3rd groove 120 corresponding above substrate 10.
Concrete, respectively with the first electrode 131 and the second electrode 132, fill and cover above free standing structure film 12
And the 3rd groove 120 of correspondence above substrate 10.
Additionally, it is optional, after forming the first electrode 131 and the second electrode 132, it is also possible to carry out annealing treatment
Reason, it is achieved Ohmic contact, reduces contact resistance.
Preferably, it is also possible to after forming the first electrode 131 and the second electrode 132, protective layer 140 is formed.
Fig. 2 m is the profile after the embodiment of the present invention one deposits protective layer, sees Fig. 2 m, the graphical etching of deposition
Protective layer 140, the protective layer 140 above the first electrode 131 and the second electrode 132 all manifests part electricity
Pole, to realize electrical connection during encapsulation.
The embodiment of the present invention is by forming cavity in the substrate and being positioned at the free standing structure film above cavity, wherein,
Form the first groove between free standing structure film and substrate, and connected by the first groove interstitial structure；Electrically insulate
Process, form surface electricity isolated layer on free standing structure film surface and substrate surface, and make the first groove interstitial structure
Insulating；Forming mask layer, wherein, the first groove is sealed by mask layer；Graphical etching mask layer and table
Face electricity isolated layer, forms the second groove respectively above free standing structure film and on substrate；Form conductive layer, fill out
Fill and cover the second groove；Graphical etching conductive layer and mask layer, form electric isolution groove；Deposition insulation
Layer, and graphical etching insulating layer in electric isolution trench region, formed respectively and be positioned at above free standing structure film
And the 3rd groove above substrate；Form the first electrode and the second electrode, with the first electrode and the second electrode
Fill respectively and cover above free standing structure film and the 3rd groove corresponding above substrate.Solve in prior art
The capacitance type sensor workflow obtained with wet etch techniques is more complicated, is susceptible to adhesion
Problem, it is achieved that technological process is simple and can avoid adhesion, improves the effect of reliability.
Embodiment two
The flow chart of the manufacture method of a kind of capacitance pressure transducer that Fig. 3 provides for the embodiment of the present invention two.
Fig. 4 a be the embodiment of the present invention two step S210 second graph be circular corresponding top view；Fig. 4 b is this
Bright embodiment two step S210 second graph is the top view that rectangle is corresponding, sees Fig. 4 a and 4b.
S210, the most graphically forming the first pattern 21, the first pattern 21 includes multiple first figure
Shape 211.
The first pattern 21 formed on substrate 20 includes multiple first figure 211.First figure 211 can be
Circular or polygon (the present embodiment exemplary the first figure 211 is set for circular or rectangle).
Fig. 4 c is the profile that the embodiment of the present invention two step S220 is corresponding, sees Fig. 4 c.
S220, multiple first figures 211 etching the first pattern 21 form multiple 4th groove 22.
Multiple first figures 211 etching the first pattern 21 form multiple 4th groove 22, and wherein, the 4th is recessed
The groove depth of groove 22 is h.
Fig. 4 d is the profile that the embodiment of the present invention two step S230 is corresponding, sees Fig. 4 d.
S230, carry out anaerobic annealing, make the 4th groove 22 close, to form cavity 23 and to be positioned at sky
Free standing structure film 24 above chamber 23.
Concrete, move back under high temperature (such as 1000 DEG C-1300 DEG C) anaerobic (such as hydrogen or argon) environment
Fire (5-60mins), the temperature and time of anaerobic annealing can be with specific reference to the aperture (circle of above-mentioned first figure 211
Shape) or width (rectangle) and adjacent first figure 211 spacing specifically arrange.Due to high temperature lower surface atom
The physical phenomenon migrated, the 4th groove 22 closes, formed cavity 23 and be positioned at above cavity 23 unsettled thin
Film 24.
It should be noted that the 4th groove 22 groove depth h, the aperture d of the first figure 211, adjacent first figure
The number of plies of free standing structure film 24, thickness T and the cavity that the value of distance s of shape 211 is formed after determining
Degree of depth D of 23.The present invention only need to form free standing structure film 24 and a cavity 23, a kind of design chi of employing
Very little it is exemplified as: d=0.7 μm；S=0.5 μm；H=5 μm；The free standing structure film 24 thickness T formed is 1.3 μm；
Cavity 23 degree of depth D formed is 0.8 μm.Adjust parameter d, s and h according to specific design, can be hanged
The free standing structure film structure that empty thin film 24 thickness is different with cavity 23 degree of depth.
Fig. 4 e is the top view that the embodiment of the present invention two step S240 is corresponding, and Fig. 4 f is A1A2 along Fig. 4 e
The profile in direction, sees Fig. 4 e and 4f.
S240, graphical etching free standing structure film 24, form multiple first groove 25, free standing structure film 24 and lining
The end 20, is connected by the first groove interstitial structure 26.
On free standing structure film 24, etching forms multiple first grooves 25, and free standing structure film 24 passes through with substrate 20
First groove interstitial structure 26 connects.
Further, optionally, the first groove interstitial structure 26 is cylinder, snakelike girder construction or Stress Release beam
Any one in structure.It is cylinder that Fig. 4 e and Fig. 4 f schematically arranges the first groove interstitial structure 26.
The structural representation of a kind of first groove interstitial structure that Fig. 4 g provides for the embodiment of the present invention two, in Fig. 4 g
First groove interstitial structure 26 is snakelike girder construction, and free standing structure film 24 and substrate 20 are by the first groove gap
Structure 26 connects.The structure of another the first groove interstitial structure that Fig. 4 h provides for the embodiment of the present invention two
Schematic diagram, in Fig. 4 h, the first groove interstitial structure 26 is Stress Release girder construction.
It should be noted that the quantity of the first groove interstitial structure 26 determines according to specific design, design principle
After over etching, the first groove interstitial structure 26 have enough rigidity prevent due to etching may cause or
The free standing structure film 24 that person's subsequent technique may cause adheres to substrate 20.
S250, carry out electric isolution process, form surface electricity isolated layer on free standing structure film surface and substrate surface,
And make the first groove interstitial structure insulating；
S260, formation mask layer, wherein, the first groove is sealed by mask layer；
S270, graphical etching mask layer and surface electricity isolated layer, respectively above free standing structure film and substrate
Upper formation the second groove；
S280, formation conductive layer, fill and cover the second groove；
S290, graphical etching conductive layer and mask layer, form electric isolution groove；
S2100, depositing insulating layer, and graphical etching insulating layer in electric isolution trench region, formed respectively
And it is positioned at the 3rd groove above free standing structure film and above substrate.
S2110, form the first electrode and the second electrode, fill covering respectively with the first electrode and the second electrode outstanding
The 3rd groove corresponding above empty thin film and above substrate.
It should be noted that step S250-S2110 is similar with the process of above-described embodiment one S120-S180,
Therefore not to repeat here for the embodiment of the present invention.
The embodiment of the present invention by the first figures multiple in etching the first pattern, then carry out anaerobic annealing and
Thermal oxidation forms cavity in the substrate and is positioned at the free standing structure film above cavity, by each film of depositing subsequent
Layer and graphical etching form capacitance pressure transducer, and it is simple that the present embodiment method achieves technological process
And adhesion can be avoided, improve the effect of reliability.
Embodiment three
The flow process of the manufacture method of a kind of capacitance pressure transducer that Fig. 5 provides for the embodiment of the present invention three
Figure.The embodiment of the present invention is the further optimization on the basis of above-described embodiment one.
Fig. 6 a is the top view that the embodiment of the present invention three step S310 is corresponding, sees Fig. 6 a.
S310, on the substrate 30 graphical the second pattern 31 formed, the second pattern 31 edge includes multiple
Second graph 311, the second pattern 31 is internal includes multiple 3rd figure 312, and second graph 311 size is big
In the 3rd figure 312 size.
The most graphically forming the second pattern 31, the second pattern 31 edge includes multiple second graph
311, the second pattern 31 is internal includes multiple 3rd figure 312, and the size of second graph 311 is more than the 3rd figure
The size of shape 312.What Fig. 6 a was exemplary arranged, and the second pattern 31 is circle, it is also possible to for rectangle or its
His shape, the shape of the concrete free standing structure film depending on wanting obtaining, second graph 311 and the 3rd figure
312 is circular, and not restriction to the embodiment of the present invention, in other embodiments, should according to reality
With.Second graph 311 and the 3rd figure 312 can also is that other shapes such as polygon, as long as ensureing second
The size of figure 311 is more than the size of described 3rd figure 312.
Fig. 6 b is the profile that the embodiment of the present invention three step S320 is corresponding, sees Fig. 6 b.
S320, multiple second graphs of graphical etching the second pattern and the 3rd figure form the 5th groove respectively
32 and the 6th groove 33.
The groove depth of the the 5th recessed poor 32 and the 6th groove 33 is h.
Fig. 6 c is the top view that the embodiment of the present invention three step S330 is corresponding, and Fig. 6 d is A1A2 along Fig. 6 c
The profile in direction, sees Fig. 6 c and Fig. 6 d.
S330, carry out anaerobic annealing, make six grooves 33 close, form cavity 35 and be positioned at cavity 35
The free standing structure film 36 of top, the 5th groove 32 contraction formation the first groove 34, and free standing structure film 36 and substrate
30 are connected by the first groove interstitial structure 37.
Concrete, anneal under high temperature anaerobic environment, due to the physical phenomenon of high temperature lower surface atomic migration,
6th groove 33 closes, and forms cavity 35 and is positioned at the free standing structure film 36 above cavity 35.6th groove
32 shrink formation the first groove 34, and free standing structure film 36 is with substrate 30 by the first groove gap knot 37 even
Connect.
Free standing structure film 36 and the first groove interstitial structure 37 is defined, it is to avoid step by direct high annealing
May produce or the issuable sticking problem of subsequent technique after rapid S240 etching.
S340, carry out electric isolution process, form surface electricity isolated layer on free standing structure film surface and substrate surface,
And make the first groove interstitial structure insulating；
S350, formation mask layer, wherein, the first groove is sealed by mask layer；
S360, graphical etching mask layer and surface electricity isolated layer, respectively above free standing structure film and substrate
Upper formation the second groove；
S370, formation conductive layer, fill and cover the second groove；
S380, graphical etching conductive layer and mask layer, form electric isolution groove；
S390, depositing insulating layer, and graphical etching insulating layer in electric isolution trench region, formed respectively
And it is positioned at the 3rd groove above free standing structure film and above substrate；
S3100, form the first electrode and the second electrode, fill covering respectively with the first electrode and the second electrode outstanding
The 3rd groove corresponding above empty thin film and above substrate.
It should be noted that step S340-S3100 is similar with the process of above-described embodiment two S250-S2110,
Therefore not to repeat here for the embodiment of the present invention.
The method of the embodiment of the present invention avoids and etches issuable or subsequent technique possibility in the second embodiment
The problem of the adhesion produced.
Embodiment four
The embodiment of the present invention four provides a kind of capacitance pressure transducer, and this capacitance pressure transducer can be by upper
The method stating any embodiment makes acquisition.As shown in Figure 7.
This capacitance pressure transducer includes: the cavity 41 being positioned in substrate 40；It is positioned at above cavity 40 and connects
The free standing structure film 42 connect；Wherein, substrate 40 surface and formation surface, free standing structure film 42 surface electricity isolated layer 43,
The junction of free standing structure film 42 and substrate 40 is formed with the first groove gap knot of the first groove 44 and insulating
Structure；Being positioned on surface electricity isolated layer 43 formation mask layer 45, the first groove 44 is sealed by mask layer 45,
Forming the second groove 46 above free standing structure film 42 and on substrate 40 respectively, this second groove runs through mask
Layer 45 and surface electricity isolated layer 43；It is positioned on mask layer 45 formation conductive layer 47, fills and to cover second recessed
Groove 46；Electric isolution groove 48 runs through conductive layer 47 and mask layer 45；It is positioned on conductive layer 47 formation insulation
Layer 49, and graphical etching insulating layer 49 in electric isolution ditch 48 region, formed respectively and be positioned at unsettled thin
The 3rd groove 410 above film 42 and above substrate 40；First electrode 420 is filled on free standing structure film 42
3rd groove 410 of side also electrically connects with conductive layer 47, and the second electrode 430 fills above substrate 40 the
Three grooves 410 also electrically connect with conductive layer 47.Protective layer 440 is formed on insulating barrier 49.
The capacitance pressure transducer that the embodiment of the present invention provides uses any of the above manufacture method to prepare, and
Avoiding the surface micromachined technique using tradition to utilize wet etching dispensing device, reliability is high.
Note, above are only presently preferred embodiments of the present invention and institute's application technology principle.Those skilled in the art
It will be appreciated that the invention is not restricted to specific embodiment described here, can enter for a person skilled in the art
Row various obvious changes, readjust and substitute without departing from protection scope of the present invention.Therefore, though
So by above example, the present invention is described in further detail, but the present invention be not limited only to
Upper embodiment, without departing from the inventive concept, it is also possible to include other Equivalent embodiments more,
And the scope of the present invention is determined by scope of the appended claims.
Claims (9)
1. the manufacture method of a capacitance pressure transducer, it is characterised in that including:
Form cavity in the substrate and be positioned at the free standing structure film above described cavity, wherein, described free standing structure film
And form the first groove between described substrate, and connected by the first groove interstitial structure；
Carry out electric isolution process, form surface electricity isolated layer on described free standing structure film surface and described substrate surface,
And make described first groove interstitial structure insulating；
Forming mask layer, wherein, described first groove is sealed by described mask layer；
Graphical described mask layer and the surface electricity isolated layer of etching, respectively above described free standing structure film and lining
The second groove is formed at the end；
Form conductive layer, fill and cover described second groove；
Graphical described conductive layer and the described mask layer of etching, formation electric isolution groove；
Depositing insulating layer, and the described insulating barrier of graphical etching in electric isolution trench region, formed the most also
It is positioned at the 3rd groove above described free standing structure film and above substrate；
Form the first electrode and the second electrode, fill covering respectively with described first electrode and the second electrode described
The 3rd groove corresponding above free standing structure film and above substrate.
Method the most according to claim 1, it is characterised in that form cavity in the substrate and be positioned at institute
Stating the free standing structure film above cavity, wherein, described free standing structure film is tied by the first groove gap with described substrate
Structure connects and includes:
Graphical formation the first pattern on substrate, described first pattern includes multiple first figure；
Multiple first figures etching described first pattern form multiple 4th groove；
Carry out anaerobic annealing, make described 4th groove Guan Bi, to form described cavity and to be positioned at described sky
Free standing structure film above chamber；
The described free standing structure film of graphical etching, forms multiple first groove, described free standing structure film and described substrate
Connected by the first groove interstitial structure.
Method the most according to claim 2, it is characterised in that described first figure is circular or polygon
Shape.
Method the most according to claim 2, it is characterised in that described first groove interstitial structure is post
Any one in body, snakelike girder construction or Stress Release girder construction.
Method the most according to claim 1, it is characterised in that form cavity in the substrate and be positioned at institute
State the free standing structure film above cavity, wherein, between described free standing structure film and described substrate, form the first groove, and
Connected by the first groove interstitial structure and include:
Graphical the second pattern formed on substrate, described second pattern edge includes multiple second graph,
Including multiple 3rd figure inside described second pattern, described second graph size is more than described 3rd graphic scale
Very little；
Etch multiple second graphs of described second pattern and the 3rd figure forms the 5th groove and the 6th recessed respectively
Groove；
Carry out anaerobic annealing, make described six groove Guan Bis, form described cavity and be positioned on described cavity
The free standing structure film of side, described 5th groove contraction formation the first groove, and described free standing structure film and described substrate
Connected by the first groove interstitial structure.
Method the most according to claim 5, it is characterised in that the spacing of adjacent second graph is more than phase
The spacing of adjacent 3rd figure.
Method the most according to claim 5, it is characterised in that described second graph is circular or polygon
Shape；Described 3rd figure is circular or polygon.
Method the most according to claim 1, it is characterised in that form electrode, at described free standing structure film
After filling the first electrode and the second electrode in the 3rd groove corresponding above top and substrate, also include:
Form protective layer.
9. a capacitance pressure transducer, it is characterised in that use any one of claim 1 to 8
Described capacitance pressure transducer manufacture method is fabricated by.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610031110.3A CN105890827B (en) | 2016-01-18 | 2016-01-18 | A kind of capacitance pressure transducer, and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610031110.3A CN105890827B (en) | 2016-01-18 | 2016-01-18 | A kind of capacitance pressure transducer, and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
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| CN110963458A (en) * | 2018-09-30 | 2020-04-07 | 上海新微技术研发中心有限公司 | Method for forming fine structure in substrate and fine structure |
| CN114608728A (en) * | 2022-03-10 | 2022-06-10 | 苏州敏芯微电子技术股份有限公司 | Capacitive pressure sensor and preparation method thereof |
| CN114608727A (en) * | 2022-03-10 | 2022-06-10 | 苏州敏芯微电子技术股份有限公司 | Capacitive pressure sensor and preparation method thereof |
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