CN105698977A - Application of WTe2 monocrystalline as low-temperature pressure transducer material - Google Patents
Application of WTe2 monocrystalline as low-temperature pressure transducer material Download PDFInfo
- Publication number
- CN105698977A CN105698977A CN201610163120.2A CN201610163120A CN105698977A CN 105698977 A CN105698977 A CN 105698977A CN 201610163120 A CN201610163120 A CN 201610163120A CN 105698977 A CN105698977 A CN 105698977A
- Authority
- CN
- China
- Prior art keywords
- monocrystalline
- wte
- temperature
- low
- resistance value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/12—Measuring force or stress, in general by measuring variations in the magnetic properties of materials resulting from the application of stress
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/16—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in the magnetic properties of material resulting from the application of stress
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention, which belongs to the technical field of the low-temperature pressure transducer, particularly provides an application of a WTe2 monocrystalline as a low-temperature pressure transducer material. According to the invention, on the basis of the characteristic of the great difference between reluctances of the WTe2 monocrystalline under different pressures at a low temperature, the WTe2 monocrystalline can be used as a pressure transducer with high sensitivity at a low temperature. The experiment demonstrates that the reluctance values of the WTe2 monocrystalline material under different pressures are different from each other obviously. When the temperature is 0.3K and the magnetic field is 14.5T, the reluctance value can reach 125000% under the pressure of 0 kbar. The reluctance value is in an obvious downtrend with increase of the pressure; and when the pressure reaches 23.6 kbar, the reluctance value is only 7470%.
Description
Technical field
The invention belongs to low-temperature pressure sensor technical field, be specifically related to WTe2Monocrystalline is as the application of new type low temperature pressure transducer material。
Background technology
Pressure transducer is the sensor that pressure is converted to signal of telecommunication output。It is a kind of means very common in industry and scientific research that system applies at present pressure。And be one significantly invent for the pressure size of applying can be calibrated exactly。Pressure transducer is widely used in various industry automatic control environment by industrial practice, has related to penetrating among numerous related application industry。And in scientific research, the accurate force value that must calibrate in pressure environment can have important impact for the pressure effect of research system。Current many instruments are to adopt plumbous (Pb) or stannum (Sn) simple substance as superconducting coil, have the feature of relative significant change to demarcate the force value of system according to its superconducting transition temperature at various pressures。But the parameter attribute that under searching different pressures, rate of change becomes apparent from can more precisely calibrate pressure。
Summary of the invention
It is an object of the invention to overcome prior art not enough, it is proposed to a kind of WTe2Monocrystalline is as the application of low-temperature pressure sensor material, and this material can more precisely calibrate force value at various pressures。
The WTe that the present invention proposes2Monocrystalline, as the application of low-temperature pressure sensor material, concretely comprises the following steps:
(1) first, by WTe2Electrode made by monocrystalline so that electric current flows along tungsten chain direction (a direction)；
(2) then, the WTe of electrode will be carried out2Monocrystalline is inserted in below 5K low temperature environment；
(3) then, apply high-intensity magnetic field along single crystalline vertical in tungsten tellurium layer direction (c direction), obtain the magnetic resistance value of this monocrystalline；
(4) repeat step (1), (2), (3) at various pressures, demarcate the magnetic resistance value of this sample under different pressures；
(5) last, utilize WTe2Monocrystalline magnetic resistance value at various pressures has the feature of significant difference, applies the magnetic field of some strength, with the WTe demarcated2Monocrystalline is as pressure transducer material more accurate under low temperature。
Present invention additionally comprises Te2Monocrystalline is as the low-temperature pressure sensor of sensing material。
The present invention utilizes WTe2Monocrystalline magnetic resistance value at various pressures has the feature of significant difference, substantially increases the accurate resolution of pressure, can as good pressure transducer material。Experiments show that, at low temperatures, this material magnetic resistance value at various pressures has the difference of highly significant。When temperature be 0.3K magnetic field is 14.5T, when 0kbar, magnetic resistance value has reached 125000%。But being as the increase of pressure, magnetic resistance has a significantly downward trend, and when pressure reaches 23.6kbar, magnetic resistance value is only 7470%。And when temperature is in 0.3K, force value from 0kbar change to 23.6kbar time, traditional pressure resolved way (utilizes stannum (Sn) simple substance as superconducting coil, have the feature of relative significant change to demarcate the force value of system according to its superconducting transition temperature at various pressures) have 28% decline, and the WTe of the present invention2Monocrystalline magnetic resistance value at various pressures has the decline of 94%, and the parameter comparing traditional nominal pressure change becomes apparent from significant decline, it is possible to be used for more accurately calibrating the different pressures value under low temperature。
Accompanying drawing explanation
Fig. 1 implements the WTe in step process in embodiment 1-22Monocrystalline pattern picture。
Fig. 2 implements the WTe in step process in embodiment 1-22Mono-crystalline structures figure。
Fig. 3 implements the WTe in step process in embodiment 1-22Single crystal X-ray diffraction figure。
Fig. 4 is the embodiment 1-2 WTe when 0.3K finally obtained afterwards2Monocrystalline is magnetic resistance value figure at various pressures。
Fig. 5 is the embodiment 1-2 WTe when 0.3K finally obtained afterwards2Monocrystalline is magnetic resistance change rate figure at various pressures。
Detailed description of the invention
Below in conjunction with drawings and Examples, technical solution of the present invention is described further。
Embodiment 1, a kind of new type low temperature pressure transducer material WTe2Monocrystalline and application thereof。
1, first, a piece of 2.0*0.7*0.02mm is selected3Size WTe2Monocrystalline, by WTe2Electrode carried out by monocrystalline so that electric current flows along a direction, and recording its room temperature resistivity is 355 μ Ω * cm。
2, being lowered the temperature from room temperature by sample, resistivity when obtaining 2k is 1.93 μ Ω * cm。
3, temperature is controlled at 0.3K, apply the high-intensity magnetic field along monocrystalline c direction, it is possible to obtain the magnetic resistance value of this monocrystalline。
4, at various pressures repetitive process (1), (2), (3), it is possible to demarcate the magnetic resistance value of this sample under different pressures。
5 finally, due to WTe2Monocrystalline magnetic resistance value at various pressures has significant difference, it is possible to the WTe demarcated2Monocrystalline is as pressure transducer material more accurate under low temperature。
Embodiment 2, a kind of new type low temperature pressure transducer material WTe2Monocrystalline and application thereof。
1, a piece of 2.15*0.55*0.02mm is first selected3Size WTe2Monocrystalline, by WTe2Monocrystalline is carried out electrode and electric current is flowed along a direction, and recording its room temperature resistivity is 396 μ Ω * cm。
2, being lowered the temperature from room temperature by sample, resistivity when obtaining 2k is 2.31 μ Ω * cm。
3, temperature is controlled at 0.3K, apply the high-intensity magnetic field along monocrystalline c direction, it is possible to obtain the magnetic resistance value of this monocrystalline。
4, at various pressures repetitive process (1), (2), (3), it is possible to demarcate the magnetic resistance value of this sample under different pressures。
5 finally, due to WTe2Monocrystalline magnetic resistance value at various pressures has significant difference, it is possible to the WTe demarcated2Monocrystalline is as pressure transducer material more accurate under low temperature。
Embodiment 3, a kind of new type low temperature pressure transducer material WTe2Monocrystalline and application thereof。
1, a piece of 2.0*0.69*0.02mm is first selected3Size WTe2Monocrystalline, by WTe2Monocrystalline is carried out electrode and electric current is flowed along a direction, and recording its room temperature resistivity is 403 μ Ω * cm。
2, being lowered the temperature from room temperature by sample, resistivity when obtaining 2k is 1.95 μ Ω * cm。
3, temperature is controlled at 0.3K, apply the high-intensity magnetic field along monocrystalline c direction, it is possible to obtain the magnetic resistance value of this monocrystalline。
4, at various pressures repetitive process (1), (2), (3), it is possible to demarcate the magnetic resistance value of this sample under different pressures。
5 finally, due to WTe2Monocrystalline magnetic resistance value at various pressures has significant difference, it is possible to the WTe demarcated2Monocrystalline is as pressure transducer material more accurate under low temperature。
Fig. 1 is WTe2Monocrystalline pattern photo。It will be clear that WTe2Monocrystalline has obviously along the striped in a direction。Fig. 2 is WTe2Monocrystalline structure cell schematic diagram, has obvious zigzag shape along W chain direction。Fig. 3 is WTe2The X-ray diffractogram of monocrystalline, lattice paprmeter c=14.054 angstrom obtained。
The present embodiment is by by WTe2Monocrystalline is carried out electrode and is made electric current be placed in low temperature environment along the flowing of a direction, applies the high-intensity magnetic field along monocrystalline c direction at various pressures, it is possible to obtain the magnetic resistance value of this monocrystalline, as shown in Figure 4。When 14.5T, the magnetic resistance value (numerical value of smooth back end) under each pressure is analyzed respectively, it is possible to finding along with the change of pressure, magnetic resistance (0.3K, 14.5T) has the change obviously declined, and therefore, it can with the WTe demarcated2Monocrystalline is as pressure transducer material more accurate under low temperature。
Claims (2)
1.WTe2Monocrystalline is as the application of low-temperature pressure sensor material, it is characterised in that concretely comprise the following steps:
(1) first, by WTe2Electrode made by monocrystalline so that electric current connects direction flowing along tungsten；
(2) then, the WTe of electrode will be carried out2Monocrystalline is inserted in below 5K low temperature environment；
(3) then, apply high-intensity magnetic field along single crystalline vertical in tungsten tellurium layer direction, obtain the magnetic resistance value of this monocrystalline；
(4) repeat step (1), step (2), step (3) at various pressures, demarcate the magnetic resistance value of this sample under different pressures；
(5) last, utilize WTe2Monocrystalline magnetic resistance value at various pressures has the feature of significant difference, applies the magnetic field of some strength, with the WTe demarcated2Monocrystalline is as pressure transducer material more accurate under low temperature。
2. one kind by WTe2Monocrystalline is as the low-temperature pressure sensor of sensing material。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610163120.2A CN105698977A (en) | 2016-03-19 | 2016-03-19 | Application of WTe2 monocrystalline as low-temperature pressure transducer material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610163120.2A CN105698977A (en) | 2016-03-19 | 2016-03-19 | Application of WTe2 monocrystalline as low-temperature pressure transducer material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105698977A true CN105698977A (en) | 2016-06-22 |
Family
ID=56231549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610163120.2A Pending CN105698977A (en) | 2016-03-19 | 2016-03-19 | Application of WTe2 monocrystalline as low-temperature pressure transducer material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105698977A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004001805A2 (en) * | 2002-06-21 | 2003-12-31 | California Institute Of Technology | Sensors based on giant planar hall effect in dilute magnetic semiconductors |
| CN1725455A (en) * | 2004-07-19 | 2006-01-25 | 精工爱普生株式会社 | Method for fabricating a semiconductor element from a dispersion of semiconductor particles |
| CN102084513A (en) * | 2008-07-08 | 2011-06-01 | 住友化学株式会社 | Photoelectric conversion element |
-
2016
- 2016-03-19 CN CN201610163120.2A patent/CN105698977A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004001805A2 (en) * | 2002-06-21 | 2003-12-31 | California Institute Of Technology | Sensors based on giant planar hall effect in dilute magnetic semiconductors |
| CN1725455A (en) * | 2004-07-19 | 2006-01-25 | 精工爱普生株式会社 | Method for fabricating a semiconductor element from a dispersion of semiconductor particles |
| CN102084513A (en) * | 2008-07-08 | 2011-06-01 | 住友化学株式会社 | Photoelectric conversion element |
Non-Patent Citations (2)
| Title |
|---|
| MAZHAR N. ALI: "Large, non-saturating magnetoresistance in WTe2", 《NATURE》 * |
| P.L.CAI: "Drastic pressure e_ect on the extremely large magnetoresistance in WTe2: quantum oscillation study", 《PHYSICAL REVIEW LETTERS》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2612122B1 (en) | Method and apparatus for calibrating a thermometer in situ | |
| EP3551981B1 (en) | Method for the in-situ calibration of a thermometer | |
| US20140130591A1 (en) | Methods and Apparatus for Determining Downhole Parameters | |
| DE3628017A1 (en) | THERMAL FLOW SENSOR | |
| DE102007053859A1 (en) | Pressure-measuring device | |
| EP2921833B1 (en) | Thermoanalytical sensor and method for its production | |
| US9766173B2 (en) | Multimodal sensor including a tensiometer, method of use and fabrication | |
| CN104345084B (en) | PH sensors with the bonding agent being arranged in patterns | |
| JP2024019227A (en) | Systems and methods for process condition measurement wafer assembly | |
| CN105492718A (en) | Downhole cooling with electrocaloric effect | |
| US10174603B2 (en) | Downhole visualisation method | |
| CN105698977A (en) | Application of WTe2 monocrystalline as low-temperature pressure transducer material | |
| CN110196115B (en) | Method for measuring temperature by using magnetic tunnel junction magnetoresistance | |
| KR102633304B1 (en) | Hall Sensor of using Anomalous Hall Effect and Method of manufacturing the same | |
| JP4528943B2 (en) | Capacitance temperature sensor and temperature measuring device | |
| CN105047814A (en) | Si-based magnetic sensing device with low magnetic field and giant magnetoresistance, preparation method and performance testing method | |
| CN104345083B (en) | There are the pH sensors of the substrate or binder course that are configured to maintain ISFET tube core piezoresistances | |
| DE102016103563A1 (en) | Method for detecting a substance contained in a gaseous medium, computer program, evaluation unit and sensor device | |
| RU46857U1 (en) | DEVICE FOR THERMOMAGNETIC MEASUREMENTS UNDER PRESSURE | |
| EP3325958A1 (en) | Sensor element for a chemical sensor and chemical sensor | |
| EP3012604B1 (en) | Sensor for the detection of infrared radiation and method for operating the sensor | |
| DE102016210300A1 (en) | Microelectromechanical bolometer and method for detecting an ambient temperature | |
| RU2380206C2 (en) | Method for manufacturing of nuclear reactor fuel element | |
| CN203271722U (en) | Storage type axial tension recording device of under-pit oil pipe | |
| DE102016010974A1 (en) | Material conversion arrangement and method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160622 |