CN105529917A - High efficiency fast voltage generating circuit - Google Patents
High efficiency fast voltage generating circuit Download PDFInfo
- Publication number
- CN105529917A CN105529917A CN201610042213.XA CN201610042213A CN105529917A CN 105529917 A CN105529917 A CN 105529917A CN 201610042213 A CN201610042213 A CN 201610042213A CN 105529917 A CN105529917 A CN 105529917A
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- China
- Prior art keywords
- voltage
- semiconductor
- oxide
- metal
- boosting unit
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
Abstract
The invention discloses a high efficiency fast voltage generating circuit, comprising a voltage input end and a voltage output end; a plurality of voltage rising units are successively connected between the voltage input end and the voltage output end; the voltage rising units comprise first MOS transistors, second MOS transistors and first capacitors for storing electric energy; the first MOS transistors and the second MOS transistors are serially connected between a power supply end VCC and a ground end; every voltage rising unit is equipped with a control node; the control nodes are connected to the gates of the first MOS transistors; the control nodes after inversion are connected to the gates of the second MOS transistors; one end of every first capacitor is connected to a former stage circuit; the other end is connected to the serial connection points of the first MOS transistors and the second MOS transistors; the serial connection points are connected to the later stage circuit; and a first diode and a second capacitor are arranged at the voltage output end. According to the invention, the output voltage is risen by using a multi-stage voltage superposing principle; the voltage rising efficiency is relatively high; the circuit is simple in structure and few in components and parts; and the size and the cost of an integrated circuit are effectively reduced.
Description
Technical field
The present invention relates to the pressure build-up technique be applied in integrated circuit, especially relate to a kind of high efficiency quick voltage circuit for generating.
Background technology
At present, in integrated circuit, be all provided with voltage generator, voltage generator can be some circuit with stable, the voltage of varying level value, to meet, each circuit unit is powered, the needs of source signal etc.Mostly there is boosting slowly and the many problem of component number in existing voltage generator, the reaction time causing integrated circuit slowly and cost high.
Summary of the invention
For solving the deficiencies in the prior art problem, the invention provides a kind of high efficiency quick voltage circuit for generating, this circuit adopts the boosting unit of the mutual series connection of many groups to carry out circuit boosting, the boosting efficiency of this boosting mode components and parts that are fast and that use are fewer, reduce the cost of integrated circuit and improve the reaction rate of integrated circuit, its concrete technology contents is as follows:
A kind of high efficiency quick voltage circuit for generating, comprise voltage input end and voltage output end, some boosting units are connected with in turn between this voltage input end and voltage output end, this boosting unit comprise be connected in series in power end VCC and ground hold between the first metal-oxide-semiconductor and the second metal-oxide-semiconductor, and for the first electric capacity of store electrical energy, each boosting unit is provided with a Controlling vertex; This Controlling vertex is connected with the grid of this first metal-oxide-semiconductor, be connected with the grid of this second metal-oxide-semiconductor after this Controlling vertex is anti-phase, one end of this first electric capacity connects previous stage circuit, what the other end was connected to this first metal-oxide-semiconductor and the second metal-oxide-semiconductor is connected in series a little, and this is connected in series and connects a rear stage circuit; This voltage output end place is provided with the first diode and the second electric capacity.
In the middle of one or more embodiment of the present invention, this boosting unit has four, comprise and connect the first boosting unit, the second boosting unit, the 3rd boosting unit and the 4th boosting unit successively, first electric capacity of this first boosting unit connects this voltage input end, first metal-oxide-semiconductor of the 4th boosting unit is connected in series an anode being connected this first diode, using the negative electrode of this first diode as output with the second metal-oxide-semiconductor.
In the middle of one or more embodiment of the present invention, the input of the Controlling vertex of those boosting units be cycle switch signal, this cycle switch signal is square wave or sine wave.
In the middle of one or more embodiment of the present invention, between the first electric capacity of this first boosting unit and this voltage input end, be connected with inverter.
The invention provides a kind of high efficiency quick voltage circuit for generating, this circuit adopts the boosting unit of the mutual series connection of many groups to carry out circuit boosting, each boosting unit is under the signal controlling of Controlling vertex, electric capacity can be realized instantaneously and repeatedly repeat the charging that adds up step by step, thus reach the effect improving output voltage values, the boosting efficiency of this boosting mode components and parts that are fast and that use are fewer, reduce the cost of integrated circuit and improve the reaction rate of integrated circuit.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of high efficiency quick voltage circuit for generating of the present invention.
Fig. 2 is the waveform voltage signal figure of each node of Fig. 1.
Embodiment
Following by reference to the accompanying drawings 1 and 2, the application's scheme is further described:
A kind of high efficiency quick voltage circuit for generating, comprises voltage input end E and voltage output end OUT, is connected with first, second, third and fourth boosting unit between this voltage input end and voltage output end in turn,
This first boosting unit comprise be connected in series in power end VCC and ground hold between metal-oxide-semiconductor Q1(i.e. the first metal-oxide-semiconductor) and metal-oxide-semiconductor Q2(i.e. the second metal-oxide-semiconductor), and for electric capacity C1(i.e. first electric capacity of store electrical energy), this first boosting unit is provided with a Controlling vertex D; This Controlling vertex D is connected with the grid of this metal-oxide-semiconductor Q1, is connected after this Controlling vertex D is anti-phase with the grid of this metal-oxide-semiconductor Q2, and one end of this electric capacity C1 connects voltage input end E by inverter, and what the other end was connected to this metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 is connected in series a N
d;
This second boosting unit comprise be connected in series in power end VCC and ground hold between metal-oxide-semiconductor Q3 and metal-oxide-semiconductor Q4, and for the electric capacity C2 of store electrical energy, this first boosting unit is provided with a Controlling vertex C; This Controlling vertex C is connected with the grid of this metal-oxide-semiconductor Q3, is connected after this Controlling vertex C is anti-phase with the grid of this metal-oxide-semiconductor Q4, and one end of this electric capacity C2 connects the some N of the first boosting unit
d, what the other end was connected to this metal-oxide-semiconductor Q3 and metal-oxide-semiconductor Q4 is connected in series a Nc;
3rd boosting unit comprise be connected in series in power end VCC and ground hold between metal-oxide-semiconductor Q5 and metal-oxide-semiconductor Q6, and for the electric capacity C3 of store electrical energy, this first boosting unit is provided with a Controlling vertex B; This Controlling vertex B is connected with the grid of this metal-oxide-semiconductor Q5, is connected after this Controlling vertex B is anti-phase with the grid of this metal-oxide-semiconductor Q6, and one end of this electric capacity C3 connects the some Nc of the second boosting unit, and what the other end was connected to this metal-oxide-semiconductor Q5 and metal-oxide-semiconductor Q6 is connected in series a N
b;
4th boosting unit comprise be connected in series in power end VCC and ground hold between metal-oxide-semiconductor Q7 and metal-oxide-semiconductor Q8, and for the electric capacity C4 of store electrical energy, this first boosting unit is provided with a Controlling vertex A; This Controlling vertex A is connected with the grid of this metal-oxide-semiconductor Q7, is connected after this Controlling vertex A is anti-phase with the grid of this metal-oxide-semiconductor Q8, and one end of this electric capacity C4 connects the some N of the 3rd boosting unit
b, what the other end was connected to this metal-oxide-semiconductor Q7 and metal-oxide-semiconductor Q8 is connected in series a N
a;
The point N of the 4th boosting unit
aconnect diode D1(i.e. the first diode) anode, the negative electrode of diode D as output, and is connected with electric capacity C5(i.e. the second electric capacity).
Those boosting units Controlling vertex A, B, C and D input be cycle switch signal, this cycle switch signal is square wave or sine wave, see accompanying drawing 2.
The specific works principle of the present embodiment is:
The Controlling vertex A of the 4th boosting unit provides a high level to the grid of metal-oxide-semiconductor Q7, and metal-oxide-semiconductor Q7 conducting is that electric capacity C4 charges, and metal-oxide-semiconductor Q8 ends, and is full of the voltage that rear electric capacity C4 two ends form 5V; When the Controlling vertex B of the 3rd boosting unit provides a high level to the grid of metal-oxide-semiconductor Q5, metal-oxide-semiconductor Q5 conducting is that power supply C2 charges, and metal-oxide-semiconductor Q6 ends, and is full of the voltage that rear electric capacity C3 two ends form 5V; Now electric capacity C1 two ends keep the voltage of 5V equally, and the 3rd boosting unit and the 4th boosting unit are equivalent to series connection, produce the voltage of 10V;
By that analogy, a boosting unit of often connecting, corresponding output voltage then increases 5V; If four boosting units of the present embodiment are by the output voltage of generation four times (i.e. 20V), meanwhile, when the level of inverter output overturns (carry a high level, meaning is hidden boost action and completed), this output voltage will raise to 25V, and this makes circuit easily obtain voltage lifting.
A kind of high efficiency quick voltage circuit for generating of the present embodiment can realize electric capacity instantaneously and repeatedly repeat cumulative charging, effective total capacitance of superposition is produced during every grade of control signal charging, the principle utilizing multilevel voltage to superpose realizes the raising of output voltage, there is higher boosting efficiency, and circuit structure is simple, components and parts are few, can effectively reduce integrated circuit volume and cost.
Above-mentioned preferred implementation should be considered as illustrating of the application's scheme implementation mode, allly to duplicate with the application's scheme, technology that is approximate or that make based on this is deduced, replaces, improvement etc., all should be considered as the protection range of this patent.
Claims (4)
1. a high efficiency quick voltage circuit for generating, comprise voltage input end and voltage output end, it is characterized in that: between this voltage input end and voltage output end, be connected with some boosting units in turn, this boosting unit comprise be connected in series in power end VCC and ground hold between the first metal-oxide-semiconductor and the second metal-oxide-semiconductor, and for the first electric capacity of store electrical energy, each boosting unit is provided with a Controlling vertex; This Controlling vertex is connected with the grid of this first metal-oxide-semiconductor, be connected with the grid of this second metal-oxide-semiconductor after this Controlling vertex is anti-phase, one end of this first electric capacity connects previous stage circuit, what the other end was connected to this first metal-oxide-semiconductor and the second metal-oxide-semiconductor is connected in series a little, and this is connected in series and connects a rear stage circuit; This voltage output end place is provided with the first diode and the second electric capacity.
2. a kind of high efficiency quick voltage circuit for generating according to claim 1, it is characterized in that: this boosting unit has four, comprise and connect the first boosting unit, the second boosting unit, the 3rd boosting unit and the 4th boosting unit successively, first electric capacity of this first boosting unit connects this voltage input end, first metal-oxide-semiconductor of the 4th boosting unit is connected in series an anode being connected this first diode, using the negative electrode of this first diode as output with the second metal-oxide-semiconductor.
3. a kind of high efficiency quick voltage circuit for generating according to claim 1, is characterized in that: the input of the Controlling vertex of those boosting units be cycle switch signal, this cycle switch signal is square wave or sine wave.
4. a kind of high efficiency quick voltage circuit for generating according to claims 1 to 3 any one, is characterized in that: be connected with inverter between the first electric capacity of this first boosting unit and this voltage input end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610042213.XA CN105529917A (en) | 2016-01-21 | 2016-01-21 | High efficiency fast voltage generating circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610042213.XA CN105529917A (en) | 2016-01-21 | 2016-01-21 | High efficiency fast voltage generating circuit |
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| CN105529917A true CN105529917A (en) | 2016-04-27 |
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| CN201610042213.XA Pending CN105529917A (en) | 2016-01-21 | 2016-01-21 | High efficiency fast voltage generating circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107612318A (en) * | 2017-09-30 | 2018-01-19 | 北京大学深圳研究生院 | Charge pump circuit |
| CN113306413A (en) * | 2016-08-31 | 2021-08-27 | 袁博 | Direct current charger with communication function suitable for lithium battery |
| CN116704961A (en) * | 2022-10-18 | 2023-09-05 | 荣耀终端有限公司 | Backlight power consumption reduction hardware circuit and device |
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| CN103872903A (en) * | 2014-03-11 | 2014-06-18 | 中山芯达电子科技有限公司 | Stackable voltage generator |
| CN204615628U (en) * | 2015-05-26 | 2015-09-02 | 广州视源电子科技股份有限公司 | A kind of multi-stage negative pressure produces circuit |
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| CN2138856Y (en) * | 1992-03-23 | 1993-07-21 | 王黎 | DC transformer |
| CN1905189A (en) * | 2005-06-23 | 2007-01-31 | 精工爱普生株式会社 | Semiconductor device and boosting circuit |
| US20070085598A1 (en) * | 2005-10-07 | 2007-04-19 | Musa Saglam | Integrated semiconductor circuit comprising a voltage pump and method for operating an integrated semiconductor circuit comprising a voltage pump |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113306413A (en) * | 2016-08-31 | 2021-08-27 | 袁博 | Direct current charger with communication function suitable for lithium battery |
| CN113306413B (en) * | 2016-08-31 | 2022-07-26 | 袁博 | Direct current charger with communication function suitable for lithium battery |
| CN107612318A (en) * | 2017-09-30 | 2018-01-19 | 北京大学深圳研究生院 | Charge pump circuit |
| CN107612318B (en) * | 2017-09-30 | 2020-04-14 | 北京大学深圳研究生院 | Charge pump circuit |
| CN116704961A (en) * | 2022-10-18 | 2023-09-05 | 荣耀终端有限公司 | Backlight power consumption reduction hardware circuit and device |
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Application publication date: 20160427 |