CN105223421B - Nano wire huge piezoresistive characteristic measurement apparatus and manufacture method thereof - Google Patents

Nano wire huge piezoresistive characteristic measurement apparatus and manufacture method thereof Download PDF

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Publication number
CN105223421B
CN105223421B CN201510758072.7A CN201510758072A CN105223421B CN 105223421 B CN105223421 B CN 105223421B CN 201510758072 A CN201510758072 A CN 201510758072A CN 105223421 B CN105223421 B CN 105223421B
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nano wire
capacitance measurement
electrode
piezoresistive characteristic
measurement apparatus
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CN105223421A (en
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张加宏
赵阳
李敏
杨敏
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Nanjing University of Information Science and Technology
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Nanjing University of Information Science and Technology
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips

Abstract

The invention discloses a kind of nano wire huge piezoresistive characteristic measurement apparatus, including: nano wire, platinum resistance temperature sensor, electric heating actuator, displacement transducer based on capacitance measurement, electrode, load sensor based on capacitance measurement, described platinum resistance temperature sensor, electric heating actuator, displacement transducer based on capacitance measurement, load sensor based on capacitance measurement is sequentially connected with, described number of electrodes is set to four, described four electrodes are arranged between displacement transducer based on capacitance measurement and load sensor based on capacitance measurement, it is provided with nano wire between the electrode of two horizontal positioned, the upper and lower both sides of described nano wire are provided with electrode.The nano wire huge piezoresistive characteristic measurement apparatus of present invention offer and manufacture method thereof, it is achieved measure while the mechanical property of nano wire and electrical characteristic, thus complete the sign of piezoresistance coefficient, be applicable to multiple different measuring sample.

Description

Nano wire huge piezoresistive characteristic measurement apparatus and manufacture method thereof
Technical field
The present invention relates to nano wire huge piezoresistive characteristic measurement apparatus and manufacture method thereof, belong to minute mechanical and electrical system technology neck Territory.
Background technology
Nano wire, as typical One, Dimensional Semiconductor Nano Materials, in addition to having the feature of general nano material, also has Mutually compatible with modern lsi technology, it is easy to prepare in a large number, and be easy to the features such as surface modification.Due to nano wire Semiconductor property demonstrate uniqueness electricity, mechanics, both thermally and chemically characteristic so that it is research range and application cover from The various fields such as chemistry, physics, biology, environmental sensor, field-effect transistor and logic circuit.In addition, silicon nanowires Also demonstrate and be different from the Flied emission of body silicon materials, thermal conductivity, visible photoluminescent and quantum limitation effect, at nanoelectronic device The aspects such as part, opto-electronic device and new forms of energy have huge potential using value.
On the one hand, when the performance of nano-scale line is with application, huge piezoresistive effect is owing to it is in pickoff and strain Value potential in engineering becomes the characteristic that people are most interested in.While it is true, the current huge piezo-resistive arrangement of nano wire Preparing or relatively difficult, its preparation method mainly has: 1, by thermal oxide repeatedly and etching process thinning reduction nanometer The diameter of line forms significant quantum limitation effect to promote the piezoresistive characteristic of nano wire；2, utilize chemical technology that nano wire is entered Row surface is modified；3, SEMICONDUCTOR-METAL heterojunction structure is prepared.
On the other hand, sign to nanostructured piezoresistance coefficient is mainly segmented into two big classes at present: a class is based on former Sub-force microscope (Atomic Force Microscope, AFM) or the loading method of other probe techniques, main feature It is to need AFM/ probe integrated nanometer mechanics sensor and nano-precision executor, need to use nano-manipulation technology handle Nanostructured is assembled into needle point and gets on etc..But this kind of experiment test system is sufficiently complex, and experimental cost is the most sufficiently expensive.And And, the size of afm tip structure is more much bigger than nanostructured, and the control accuracy during mechanical load is extremely difficult to nanometer amount Level.Additionally, the experiment of most of AFM mechanical load is all at scanning electron microscope (Scanning Electron Microscopy, SEM) in carry out, the imaging technique of SEM can produce impact to the measurement of electrical characteristic.Another kind of, it is to utilize Nanostructured is loaded by microelectromechanical systems microdrive, currently mainly has the driving of Piezoelectric Driving, static broach, heat to drive Dynamic three kinds of MEMS actuator parts, the measurement of its resistance all uses two-point measurement, due to the existence of the factors such as contact resistance, undoubtedly Increase the measurement error of the piezoresistance coefficient of nano wire.
Significantly, since temperature drift makes the sensitivity of the huge piezoresistance sensor of quasiconductor and stability produce one Fixing sound, and reduce the precision of measurement, so for the semiconductor pressure resistance sensor needs being applied to various temperature environment Consider its temperature drift effect, but the research currently for the temperature characterisitic of the piezoresistance coefficient of nano wire is the most less, thus compel Be essential measurement to be correlated with and research method.
Summary of the invention
Purpose: in order to overcome the deficiencies in the prior art, the present invention provides a kind of huge piezoresistive characteristic of nano wire to measure Device and manufacture method thereof.
Technical scheme: for solving above-mentioned technical problem, the technical solution used in the present invention is:
A kind of nano wire huge piezoresistive characteristic measurement apparatus, including: nano wire, platinum resistance temperature sensor, electric heating actuator, Displacement transducer based on capacitance measurement, electrode, load sensor based on capacitance measurement, described platinum resistance temperature sensor, Electric heating actuator, displacement transducer based on capacitance measurement, load sensor based on capacitance measurement are sequentially connected with, described electrode Quantity is set to four, and described four electrodes are arranged on displacement transducer based on capacitance measurement and load based on capacitance measurement Between sensor, being provided with nano wire between the electrode of two horizontal positioned, the upper and lower both sides of described nano wire are provided with electrode.
Also including calibrating probe, described calibration probe is connected with load sensor based on capacitance measurement.
Also include electric insulation module, it is characterised in that: described electric heating actuator and displacement sensing based on capacitance measurement Between device, between displacement transducer based on capacitance measurement and electrode, between electrode and load sensor based on capacitance measurement, It is provided with electric insulation module between load sensor based on capacitance measurement and calibration probe.
Described nano wire uses outgrowth silicon nanowires, by preparing the nanoparticle of silver on nano wire, it is carried out table Face is modified and is formed huge piezoresistive characteristic.
Described nano wire uses chemical gaseous phase depositing process, based on radially having huge pressure drag with the control of axial growth synthesis The SiGe radial heterostructure nano wire of characteristic.
The SiGe longitudinal direction hetero-junctions that described nano wire uses solution Meteorological Act to have huge piezoresistive characteristic from growth self assembly is received Rice noodle.
Described nano wire uses STM needle point to operate the nano wire with huge piezoresistive characteristic preparation completed two suspensions Electrode top relevant position carries out positioning, calibrates, strains the assembly manipulations such as nano wire, utilizes e-beam induced deposition by nanometer Linear array is fixed on bridged electrode.
Nano wire huge piezoresistive characteristic measurement apparatus manufacture method, it is characterised in that: comprise the steps:
Step one: select top layer silicon 25 m, buried oxide layer 2 m, the soi wafer of bottom silicon 300 m, silicon chip is successively put Enter and the mixed solution of acetone, hydrogen peroxide and concentrated sulphuric acid carries out ultrasonic cleaning, more repeatedly clean up with deionized water；Then will The silicon chip cleaned up is put in the HF solution of dilution and is reacted, to remove the oxide layer of silicon chip surface；
Step 2: by the SiO of the LPCVD technology top layer at soi wafer with bottom siliceous deposits 1 m2Oxide layer；
Step 3: etch top layer Si O by RIE technology2Oxide layer forms platinum resistance region；Platinum is etched by DRIE technology Resistance region；
Step 4: etch top layer Si O by RIE technology2Oxide layer, forms boron doped resistor district；By diffusion technique, Resistance area carries out boron doping, and the resistivity of described resistance area is set to 1.7 ~ 1.9 × 10-5Ω m, forms p-type doped silicon resistance District；
Step 5: use buffer oxide etch BOE to peel off the SiO of silicon face2Oxide layer；
Step 6: etch bottom SiO by RIE technology2Oxide layer, forms insulation module figure；
Step 7: at soi wafer bottom spin coating photoresist；Utilize mask plate, be lithographically formed oxide skin(coating) etching mask figure Case；
Step 8: by DRIE technology to bottom silicon etching 100 m；
Step 9: be not photo-etched the bottom SiO of glue protection by RIE technology etching2Oxide layer；
Step 10: by DRIE technology to not being photo-etched the bottom silicon etching that glue is protected with oxide layer；
Step 11: use positive photoresist to form platinum resistance figure, use stripping technology method, at SiO2Bury The platinum resistance of temperature unit is produced on layer；
Step 12: use positive photoresist to form electrode and lead district figure；Sputtered aluminum, uses stripping technology method, Form lead-in wire and electrode on aluminum；
Step 13: etch SiO2 buried layer by RIE technology, expose insulation module；
Step 14: peel off residual photoresist, the SiO2 oxide layer of bottom；
Step 15: by DRIE technology, top layer silicon has been etched device architecture, formed complete structure after annealing, utilized Photoetching, etching, stripping technology form aluminum bottom electrode at measurement structure substrate.
Beneficial effect: the nano wire huge piezoresistive characteristic measurement apparatus of present invention offer and manufacture method thereof, uses external electricity Field is modified, with chemical technology surface, the method combined and is modified the surface state structure of nano wire, or utilizes self-growing Silicon germanium heterojunction structure completes to have the nano wire of huge piezoresistive characteristic to be prepared.
The MEMS technology using the standard CMOS process being suitable for producing in enormous quantities compatible completes the huge piezoresistive characteristic of nano wire Measurement apparatus, this MEMS measurement apparatus can realize the mechanical property of nano wire and measure while electrical characteristic, thus complete The sign of piezoresistance coefficient, and it is applicable to multiple different measuring sample.
This measurement apparatus is changed by the electric capacity numeral that displacement transducer based on capacitance measurement is external with load sensor Chip obtains elongation and the load data of nano wire, thus does not relies on sweep electron microscope imaging, thus avoids electricity Son bundle irradiates the impact measuring electrical characteristic.The temperature being simultaneous for sample affects the problem that piezoresistance coefficient is measured, should Measurement apparatus is also integrated with the temperature sensor temperature-compensating for piezoresistance coefficient, reduces the impact of environmental system, thus completes The purpose of the high-acruracy survey of the multiple huge piezoresistance coefficient of measurement sample.
1. the invention provides 5 kinds of preparation methoies with the nano wire of huge piezoresistive characteristic, the MEMS of huge piezoresistive characteristic surveys Amount device has the ability applying bias field, can modulate the piezoresistive characteristic of nano wire.
2. MEMS temperature sensor and measurement apparatus are integrated and carry out temperature-compensating by the present invention, it is ensured that it is consistent Property, improve huge piezoresistance coefficient degree of accuracy.
3. the present invention combines four probe structures and eliminates the impact of contact resistance so that nano wire huge piezoresistance coefficient Measurement result is more accurate.
4. the invention provides a higher sample rate, in accident, such as: plastic deformation and the data of destruction Point can capture.
Device the most involved in the present invention is placed in the outside sign of vacuum chamber so that it is be easier to research environment factor to receiving Rice properties of materials, such as the impact of gas, light or temperature.
6. the present invention obtain all measurement data power and displacement, not against sweep electron microscope imaging, it is to avoid The impact that the electrical characteristic of sample is measured by electron beam irradiation.
7. the measurement sample of the present invention can be two-dimensional film, one-dimensional nano structure, and its nanostructured can be single half Nanowires structure, can be heterojunction nano-wire, it is possible to for nano-wire array.
Accompanying drawing explanation
Fig. 1 is the structural representation of nano wire huge piezoresistive characteristic measurement apparatus；
Fig. 2 is the workflow diagram of nano wire huge piezoresistive characteristic measurement apparatus；
Fig. 3 is nano wire huge piezoresistive characteristic measurement apparatus preparation technology flow chart；
Fig. 4 be SiGe radially heterojunction nano-wire prepare schematic diagram；
Fig. 5 is the growth schematic diagram of SiGe longitudinal direction heterojunction nano-wire；
Fig. 6 is the schematic diagram that nano wire is fixed on electrode by STM probe operation；
Fig. 7 is that nano wire is from the schematic diagram being grown on electrode；
Fig. 8 is MEMS technology flow chart prepared by the integral measuring structure of beamwriter lithography nano wire；
Fig. 9 is the structural representation of four electrode measurements of nano wire；
Figure 10 is the mechanistic model of the mechanics characterization device of nano wire sample；
Figure 11 is wavelet neural network temperature-compensating flow chart based on improved adaptive GA-IAGA.
Detailed description of the invention
Below in conjunction with the accompanying drawings the present invention is further described.
As it is shown in figure 1, a kind of nano wire huge piezoresistive characteristic measurement apparatus is platinum resistance temperature sensor the most respectively 1, for temperature-compensating；Electric heating actuator 2, is used as driving means and makes displacement transducer, nano wire and load sensor Mobile；Displacement transducer 3 based on capacitance measurement, is used for measuring the displacement of thermal actuator, is simultaneously implemented as driving of thermal actuator Galvanic electricity pressure decoupling function；Four electrodes 4 for four-point probe measurment；There is the nano wire 6 of huge piezoresistive characteristic；Based on capacitance measurement Load sensor 9, be used for the measurement of displacement itself and pulling force；Correcting probe 10, for carrying out school for force transducer Accurate.Above-mentioned all unit are stablized by one group of beam being anchored on top layer silicon and are done single axial movement in the same plane, whole to guarantee Nano wire specimen uniform load.
Electric heating actuator 2 and displacement transducer 3, displacement transducer 3 and electrode 4, electrode 4 and load sensor 9, load passes Sensor 9 realizes being mechanically connected, with to nanometer by the electric insulation module 11 of four SOI buried layers with calibration probe 10 respectively Line sample provides independent electric measurement；It is also used for the mechanical connection of load sensor 9 and calibration probe 10, it is achieved effectively survey Amount.Two bridged electrodes 4 realize being mechanically connected with nano wire 6.
As in figure 2 it is shown, the measuring process of a kind of nano wire huge piezoresistive characteristic measurement apparatus: the first step, the completeest Displacement transducer is become to calibrate with load sensor；Second step, electric heating actuator promotes position as driving means by insulation module Displacement sensor is moved to the left, and pulls nano wire to be moved to the left by insulation module simultaneously, and nano wire draws also by insulation module Dynamic load sensor is moved to the left；3rd step, by the electricity that load sensor based on capacitance measurement and displacement transducer are external Hold numeral conversion chip and obtain load and the elongation data of nano wire, meanwhile obtain pressure drag by the measurement of four probes and become Change；4th step, characterizes piezoresistive effect by the coefficient of strain.
As it is shown on figure 3, the preparation method of a kind of nano wire huge piezoresistive characteristic measurement apparatus, the method concrete steps:
1) top layer silicon 25 m is selected, buried oxide layer 2 m, the soi wafer of bottom silicon 300 m, silicon chip is successively put into third The mixed solution of ketone, hydrogen peroxide and concentrated sulphuric acid carries out ultrasonic cleaning, more repeatedly cleans up with deionized water；Then will clean Clean silicon chip is put in the HF solution of dilution and is reacted, to remove the oxide layer of silicon chip surface；
2) by the SiO of the LPCVD technology top layer at soi wafer with bottom siliceous deposits 1 m2Oxide layer；
3) etched by RIE(reactive ion) technology etching top layer Si O2Oxide layer forms platinum resistance region；Pass through DRIE (deep reactive ion etch) technology etching platinum resistance region；
4) top layer Si O is etched by RIE technology2Oxide layer, forms boron doped resistor district；By diffusion technique, at resistance District carries out boron doping (resistivity: 1.7 ~ 1.9 × 10-5Ω m), form p-type doped silicon resistance area；
5) buffer oxide etch (BOE) is used to peel off the SiO of silicon face2Oxide layer；
6) bottom SiO is etched by RIE technology2Oxide layer, forms insulation module figure;
7) at soi wafer bottom spin coating photoresist；Utilize mask plate, be lithographically formed oxide skin(coating) etching mask pattern；
8) by DRIE technology to bottom silicon etching 100 m；
9) the bottom SiO of glue protection it is not photo-etched by RIE technology etching2Oxide layer；
10) by DRIE technology to not being photo-etched the bottom silicon etching that glue is protected with oxide layer；
11) use positive photoresist to form platinum resistance figure, use stripping technology method, at SiO2Make on buried layer Go out the platinum resistance of temperature unit；
12) positive photoresist is used to form electrode and lead district figure；Sputtered aluminum, use stripping technology method, formed and Lead-in wire and electrode on aluminum；
13) SiO is etched by RIE technology2Buried layer, exposes insulation module；
14) residual photoresist, the SiO of bottom are peeled off2Oxide layer；
15) by DRIE technology top layer silicon etch device architecture, formation complete structure after annealing, utilize photoetching, Etching, stripping technology form aluminum bottom electrode at measurement structure substrate.
It should be noted that addition bias voltage between the bridged electrode and substrate of MEMS measurement apparatus, can exhaust Conducting channel forming part region pinch off in nano wire thus be advantageously implemented the huge piezoresistive characteristic of nano wire.
Next completes the calibration of load sensor and displacement transducer.The data sampling rate of device calibration is 45Hz.Give electricity Thermal arrest device makes displacement transducer be moved to the left with electric heating actuator after powering on, read the position of displacement transducer in micro-imaging Move and the output voltage of electric capacity numeral conversion chip circuit corresponding with displacement, obtain displacement transducer respectively with corresponding electricity The relation of pressure output.Use probe device promote correcting probe move, read in micro-imaging the displacement of load sensor and The output voltage of electric capacity numeral conversion chip circuit corresponding with displacement, obtains load sensor defeated with corresponding voltage respectively The relation gone out.Use precise microbalance calibration load sensor simultaneously, obtain the relation of displacement and load.
The present invention gives 5 kinds of nano wire methods to set up with huge piezoresistive characteristic, specific as follows:
Embodiment 1: the silicon nanowires of band silver
Experimentation prepared by Si nano wire is: first with 2% HF solution (HF:H2O=1:50) Si sheet is cleaned 3 points Clock, to remove the natural oxidizing layer on Si sheet surface；Then, the mixing that silicon chip is successively put into acetone, hydrogen peroxide and concentrated sulphuric acid is molten Liquid carries out ultrasonic cleaning, more repeatedly cleans up with deionized water；Then vacuum evaporating coating machine is utilized to evaporate high-purity Au, Si substrate surface deposits certain thickness metallic catalyst;Finally, the sample having deposited metallic catalyst is placed on control automatically In the quartz ampoule of temperature tubular type oxidation furnace, under temperature is the 800-1100 DEG C of protective atmosphere with certain flow, carry out high annealing To grow Si nano wire.Falling oxide-film on nano wire by hydrofluoric acid treatment, the surface of the nano wire of silicon is passivated by hydrogen, surface quilt The silicon nanometer that hydrogen is passivated is put in silver nitrate solution, is prepared for the nanoparticle of silver on silicon nanowires.
Embodiment 2: SiGe radially heterojunction nano-wire
Gold nanoclusters is deposited on the silicon wafer of oxidation, and is placed on a quartz tube furnace.Under the conditions of 450 DEG C, use silicon Alkane is as precursor gas so that silicon nanowires core is axially the most about growing with the rate of increase of 2 m/min, then use silane and The diborane of 100ppm helium is as precursor gas depositing p-type silicon shell, and with the radial growth speed of 10nm/min.Exist subsequently Under the conditions of 380 DEG C, in the relevant argon of Ge nanoline 10%, the speed with axial growth speed as 0.72um/min grows, and germanium Shell is deposited with the radial velocity of 10nm/min by the location circumstances changing growth substrates in stove.Can by repeating process above To complete the nano wire of various core-shell structure, such as Si/Ge, Ge/Si, or Si/Ge/Si, Ge/Si/Ge etc..Its process chart Such as Fig. 4.
Embodiment 3: SiGe longitudinal direction heterojunction nano-wire
The first step, is placed in the clean silicon chip washed with organic solvent in vacuum sputtering coating instrument, sputters at silicon chip surface The stannum of one layer of about 10nm, is heated to 600 DEG C, and stannum is agglomerated into nano-particle；Second step, at 450-470 DEG C, by stupid silane Thermally decompose to yield silane gas, then silane gas is grown silicon nanometer as precursor gas in tin nanoparticles catalyst layer surface Fragment, is passed through (Ar+5%H after reaction completely2) gas, remove remaining different precursor gas；3rd step, at 420-440 DEG C, By triphenyl germane liquid heat decompose obtain Germane gas, then using as grow germanium nanometer fragment precursor gas, at silicon Grow germanium nanometer fragment in nanometer fragment, after reaction completely, be passed through (Ar+5%H2) gas, remove remaining different precursor gas. Form the silicon germanium heterojunction nano wire of abrupt interface by being iteratively repeated two above step, its structure is until growing suitable long The silicon germanium heterojunction nano wire (Si/Ge/Si/Ge) of degree.Its process chart such as Fig. 5.
For above-mentioned three kinds of case study on implementation, STM(is utilized to sweep to tunnel microscope) needle point operates the nanometer that preparation completed Line carries out two bridged electrode upper surface relevant positions positioning, calibrates, strains the assembly manipulations such as nano wire, utilizes electron beam to lure Leading deposition and nano-wire array is fixed on bridged electrode, its effect is shown in Fig. 6.
Embodiment 4: the silicon nanowires that self-growing surface is modified
Model is formed the oxide layer of 30-60 nanometer thin, then photoetching is positioned to, except the oxide layer of groove sidewall, form growth The window of silicon nanowires.Use photoetching auxiliary positioning growth district, utilize electro-deposition method to obtain at growth district highdensity Tin nanoparticles catalyst, is immersed in substrate containing tin-salt solution, hydrofluoric acid solution and surfactant in deposition process In microemulsion, the granule becoming radius to be 10-20 nanometer.Stupid silane (PS) is thermally decomposed at 450-470 DEG C, obtains silane Gas；After using silane gas as precursor gas tin nanoparticles catalyst layer surface grow silicon nanowires so that bridged electrode It is connected by nanometer linear array, nano wire is carried out Ba, the surface moditied processing of Hf, Zr doping, improves surface density of states, increase table Face effect and piezoresistive characteristic, as shown in Figure 7.
Embodiment 5: silicon nanowires is modified on surface based on MEMS technology
Complete the calibration of load sensor and displacement transducer for said structure, use beamwriter lithography nano wire, Complete the preparation of silicon nanowires huge piezoresistive characteristic measurement apparatus, as shown in Figure 8.Specifically comprise the following steps that
1) top layer silicon 25 m is selected, buried oxide layer 2 m, the soi wafer of bottom silicon 300 m, silicon chip is successively put into third The mixed solution of ketone, hydrogen peroxide and concentrated sulphuric acid carries out ultrasonic cleaning, more repeatedly cleans up with deionized water；Then will clean Clean silicon chip is put in the HF solution of dilution and is reacted, to remove the oxide layer of silicon chip surface；
2) by the SiO of the LPCVD technology top layer at soi wafer with bottom siliceous deposits 1um2Oxide layer；
3) etched by RIE(reactive ion) technology etching top layer Si O2Oxide layer forms platinum resistance region；Pass through DRIE (deep reactive ion etch) technology etching platinum resistance region；
4) top layer Si O is etched by RIE technology2Oxide layer, forms boron doped resistor district；By diffusion technique, at resistance District carries out boron doping (resistivity: 1.7 ~ 1.9 × 10-5Ω m), form p-type doped silicon resistance area；
5) buffer oxide etch (BOE) is used to peel off the SiO of silicon face2 Oxide layer；
6) bottom SiO is etched by RIE technology2Oxide layer, forms insulation module figure;
7) at soi wafer bottom spin coating photoresist；Utilize mask plate, be lithographically formed oxide skin(coating) etching mask pattern；
8) by DRIE technology to bottom silicon etching 100 m；
9) the bottom SiO of glue protection it is not photo-etched by RIE technology etching2Oxide layer；
10) by DRIE technology to not being photo-etched the bottom silicon etching that glue is protected with oxide layer；
11) SiO is etched by RIE technology2Buried layer, exposes insulation module, peels off residual photoresist, the SiO of bottom2Oxygen Change layer；
12) use positive photoresist to form platinum resistance figure, use stripping technology method, at SiO2 Make on buried layer Go out the platinum resistance of temperature unit；
13) by LPCVD method at the silicon nitride of soi wafer one layer of 1 m of top layer accumulation, the method etching cashier of RIE is used Nanowire regions；
14) under 1100 degree of pure oxygen environments, aoxidize upper layer of silicon, use BOE solution corrosion to fall silicon dioxide, then carry out many Aoxidize under secondary same environment, corrode silicon dioxide, until nanowire thickness reaches 100nm；Adulterate Hf, Ba to nano wire region Or Zr；
15) falling oxide-film on nano wire by hydrofluoric acid treatment, the surface of the nano wire of silicon is passivated by hydrogen, surface by hydrogen institute The silicon nanometer of passivation is put in silver nitrate solution, is prepared for the nanoparticle of silver on silicon nanowires；Use the method etching of RIE Fall the silicon nitride of remnants；
16) positive photoresist is used to form electrode and lead district figure；Sputtered aluminum, use stripping technology method, formed and Lead-in wire and aluminum electrode；
17) first step is by photoresist negative in soi wafer spin coating, carries out soft baking after gluing；Second step electron beam is in photoetching Glue surface scan obtains nano wire bargraphs and the component graphics thereof of the various sizes of needs；The figure of exposure is entered by the 3rd step Row development, the part then removing exposure has etched device architecture by DRIE technology to top layer silicon；Finally by unexposed portion The photoresist divided is removed.Photoetching, etching, stripping technology is utilized to form bottom electrode at measurement structure substrate.
Then, nano wire initial resistance is tried to achieve.As it is shown in figure 9, provide perseverance by two electrodes of horizontal direction for nano wire Stream source I, two electrodes of vertical direction provide voltage V for nano wire0, obtain the initial resistance of nano wire.D1 is vertical The distance of nano wire between the electrode of two, direction, the distance of nano wire between two electrodes of d0 horizontal direction；As highlighted previously , between nano wire bridged electrode and substrate, add bias voltage simultaneously, exhaust nano wire conducting channel forming part region Pinch off can be conducive to fully realizing the huge piezoresistive characteristic of nano wire.
Therewith, provide voltage for electric heating actuator, make whole device work.Electric heating actuator passes through absolutely as driving means Edge module promotes displacement-capacitance sensor to be moved to the left movement, pulls nano wire to be moved to the left by insulation module, nanometer simultaneously Line pulls load sensor to be moved to the left by insulation module.Nano wire tensile elongation dsIt is the displacement of displacement transducer for nanometer daDeduct the displacement d of load sensorf, try to achieve nano wire strain stress=ds/d0.Nanowire length elongation dsAfter, vertical direction two The voltage of individual electrode becomes V1 , nano wire change after resistance R1For,.Pass through piezoresistance coefficientCharacterize piezoresistive effect.
Such as Figure 10, owing to the sample of nano wire becomes a part for the mechanical system in the test process of this device, ksds = kf df； Fa=kada+ ksds, wherein ks、ka、kfIt is respectively nano wire, load sensor, the rigidity of electric heating actuator；ds、da、df It is respectively nano wire, load sensor, the displacement of electric heating actuator；The power that electric heating actuator produces , wherein α is the thermal coefficient of expansion of silicon, and Δ T is the mean temperature of V-type beam, and N is the number of V-type beam, and A is the cross section of V-type beam Long-pending.The rigidity of nano wireCan be obtained by the ratio of the load sensor load corresponding to output voltage with displacement.Nano wire can be obtained Rigidity ks=F/ ds, nano wire stress δ=F/S, F is load sensor load, and S is the cross-sectional area of nano wire.Thus received Rice noodle Young mould E=δ/ε.
Completed the measurement of nano wire mechanical property and electrical characteristic by above step, characterize the huge of nano wire simultaneously Piezoresistive effect.During measuring, the temperature of sample and resistivity have direct relation, thus affect the survey of piezoresistance coefficient Amount, so first having to grasp the temperature of sample before measuring, if the temperature of print is not in applicable measurement when measuring Scope, just influences whether final piezoresistance coefficient, then wavelet-neural network model based on improved adaptive GA-IAGA must be used to enter Row revise, idiographic flow as shown in figure 11:
Step 1: initialization of population: random initializtion population, to the link between wavelet neural network input layer and hidden layer Weights, hidden layer encode to the link weights of output layer, flexible silver and shift factor, produce the initialization kind of certain scale Group.
Step 2: according to the link weights of the wavelet neural network that individuality obtains, flexible and shift factor.Input measurement obtains The piezoresistance coefficient arrived and temperature data, as training data, obtain prediction output and the target of system after training wavelet neural network Error between value is as adaptive value F.
Step 3: select, intersects and mutation operation.
Step 4: whether judge to evolve and terminate, here by two termination conditions: whether fitness value meets relation, heredity is calculated Method reaches the number of iterations set, and meets the two condition and just can utilize the weights searched for, and flexible and shift factor is carried out Wavelet neural network calculates.
The present invention passes through nano wire huge piezoresistive characteristic measurement apparatus and MEMS measuring method thereof, it is achieved multiple measurement sample Mechanical property and the measurement of electrical characteristic, and characterize piezoresistance coefficient.Can be extended to other kinds of nano wire, such as metal- The measurement of the mechanics of silicon heterogenous nano wire, electricity and piezoresistive characteristic.
The above is only the preferred embodiment of the present invention, it should be pointed out that: for the ordinary skill people of the art For Yuan, under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications also should It is considered as protection scope of the present invention.

Claims (7)

1. a nano wire huge piezoresistive characteristic measurement apparatus, it is characterised in that: including: nano wire, platinum resistance temperature sensor, electricity Thermal actuator, displacement transducer based on capacitance measurement, electrode, load sensor based on capacitance measurement, described platinum resistance temperature Degree sensor, electric heating actuator, displacement transducer based on capacitance measurement, load sensor based on capacitance measurement connect successively Connecing, described number of electrodes is set to four, and described four electrodes are arranged on displacement transducer based on capacitance measurement and based on electricity Hold between the load sensor measured, between the electrode of two horizontal positioned, be provided with nano wire, the upper and lower both sides of described nano wire It is provided with electrode.
Nano wire the most according to claim 1 huge piezoresistive characteristic measurement apparatus, it is characterised in that: also include calibrating probe, Described calibration probe is connected with load sensor based on capacitance measurement.
Nano wire the most according to claim 2 huge piezoresistive characteristic measurement apparatus and manufacture method thereof, also include electric insulation Module, it is characterised in that: between described electric heating actuator and displacement transducer based on capacitance measurement, position based on capacitance measurement Between displacement sensor and electrode, between electrode and load sensor based on capacitance measurement, load sensing based on capacitance measurement It is provided with electric insulation module between device and calibration probe.
The method arranging nano wire in nano wire the most according to claim 1 huge piezoresistive characteristic measurement apparatus, its feature exists Use outgrowth silicon nanowires in: described nano wire, it is carried out surface repair by preparing the nanoparticle of silver on nano wire Decorations form huge piezoresistive characteristic.
The method arranging nano wire in nano wire the most according to claim 1 huge piezoresistive characteristic measurement apparatus, its feature exists In: described nano wire uses chemical gaseous phase depositing process, based on radially having huge piezoresistive characteristic with the control of axial growth synthesis SiGe radial heterostructure nano wire.
The method arranging nano wire in nano wire the most according to claim 1 huge piezoresistive characteristic measurement apparatus, its feature exists In: described nano wire uses solution Meteorological Act to have the SiGe longitudinal direction heterojunction nano-wire of huge piezoresistive characteristic from growth self assembly.
The method arranging nano wire in nano wire the most according to claim 1 huge piezoresistive characteristic measurement apparatus, its feature exists In: described nano wire uses STM needle point to operate the nano wire with huge piezoresistive characteristic preparation completed at two bridged electrodes Upper surface relevant position carries out positioning, calibrates, strains the assembly manipulations such as nano wire, utilizes e-beam induced deposition by nanometer linear array Row are fixed on bridged electrode.
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