CN105206508A - Preparation method of nanometer clearance and application thereof - Google Patents
Preparation method of nanometer clearance and application thereof Download PDFInfo
- Publication number
- CN105206508A CN105206508A CN201510532295.1A CN201510532295A CN105206508A CN 105206508 A CN105206508 A CN 105206508A CN 201510532295 A CN201510532295 A CN 201510532295A CN 105206508 A CN105206508 A CN 105206508A
- Authority
- CN
- China
- Prior art keywords
- sample
- deposition
- photoresist
- metal oxide
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Abstract
Provided in the invention is a preparation method of a nanometer clearance. The preparation method comprises: photoetching is carried out on a sample where a first metallic film is deposited to obtain a sample with the first metallic film protected by one part of photoresist; a first metal unit that is not protected by the photoresist is etched and removed to obtain an etched sample; a metallic oxide is deposited on the etched sample to obtain a sampled with the deposited metallic oxide; the metallic oxide that is arranged on the sample with the deposited metallic oxide at the horizontal direction is etched to obtain a sample where the metallic oxide at the horizontal direction is removed; a second metal unit is deposited on the sample with the removed metallic oxide at the horizontal direction to obtain a sample with a deposited second metallic film; and the photoresist arranged on the sample with the deposited second metallic film, the metallic film on the photoresist, and the metallic oxide are removed to obtain a nanometer clearance. The experiment result demonstrates that the preparation method has the addressing capability and the width uniformity of the nanometer clearance is good and the success rate is high.
Description
Technical field
The invention belongs to field of nanometer technology, particularly relate to a kind of preparation method and application thereof of nano gap.
Background technology
The nano gap of very small dimensions, especially when its spacing distance is less than below 10 nanometers, this special nanotopography characteristic and consequent electromagnetic field height locality, make it be at nano-electrode, molecular device, single-photon light source or all have important application in phasmon components and parts, enhancing Raman, catalytic reaction etc.
The method possessing the following nano gap of preparation 10 nanometer developed at present mainly comprises chemical synthesis, mechanical breaking method, electromigration and shadow deposition method.And in these preparation methods, chemical synthesis can realize the preparation of the nano gap of large batch of gap uniformity by the method for wrapping up intermediate layer in building-up process, but this method lacks addressability, and the nano gap prepared cannot be satisfied with the application of nano-electrode; And mechanical breaking method, electromigration and shadow deposition method are owing to lacking good controlling, the homogeneity of the nano gap thus prepared is poor and success rate is lower.
Summary of the invention
In view of this, technical problem to be solved by this invention is the preparation method providing a kind of nano gap, nano gap provided by the invention while there is addressability, the homogeneity of nano gap is good.
The invention provides a kind of preparation method of nano gap, comprising:
1) metallic film in the sample of deposition first metallic film carries out photoetching treatment, obtains the sample being protected the first metallic film by part photoresist;
2) do not protect the first metal of part to etch to the photoresist in the sample of the first metallic film of being protected by part photoresist obtained, obtain the sample after etching;
3) depositing metal oxide on sample after etching, obtains the sample depositing metal oxide;
4) to the metal oxide etching of horizontal direction deposition in the sample depositing metal oxide, the sample of the metal oxide eliminating horizontal direction deposition is obtained;
5) on the sample of metal oxide eliminating horizontal direction deposition, deposit the second metal, obtain the sample of deposition second metallic film;
6) the second metallic film on the photoresist in the sample of deposition second metallic film, photoresist and metal oxide are removed, obtain nano gap.
Preferably, described first metal is gold, silver, platinum or copper.
Preferably, described second metal is gold, silver, platinum or copper.
Preferably, described metal oxide is be dissolved in the metal oxide of acid or be dissolved in the metal oxide of alkali.
Preferably, described step 1) photoetching treatment comprise the coating of photoresist, exposure, development and fixing;
Wherein, described photoresist is positive photoresist.
Preferably, the Exposure mode of described exposure is electron beam exposure, deep UV lithography, extreme ultraviolet exposure, X-ray exposure or nano impression.
Preferably, described step 2) etching be argon ion etching.
Preferably, described step 3) in the depositional mode of depositing metal oxide be Atomic layer deposition.
Preferably, described step 5) the depositional mode of deposition first metal be argon ion sputtering deposition, pulsed laser deposition, thermal evaporation deposition or electron beam evaporation deposition.
Present invention also offers nano gap prepared by a kind of preparation method of the present invention and prepare the application in electronic device.
Compared with prior art, the invention provides a kind of preparation method of nano gap, by carrying out photoetching treatment on the sample of deposition first metallic film, obtain the sample that the first metallic film protected by part photoresist, then etching removing is not by the first metal that photoresist is protected, obtain the sample after etching, depositing metal oxide on sample after etching, obtains the sample depositing metal oxide; To the metal oxide etching of horizontal direction in the sample depositing metal oxide, obtain the sample removing horizontal direction metal oxide; The sample removing horizontal direction metal oxide deposits the second metal, obtains the sample of deposition second metallic film; Photoresist in the sample of deposition second metallic film, the metallic film on photoresist and metal oxide are removed, obtains nano gap; Experimental result shows, the preparation method of nano gap provided by the invention, not only has addressability, and the gap width homogeneity of nano gap is good and success rate is high; In addition, preparation method provided by the invention can the interval of accuracy controlling nano gap, and can prepare the nano gap structure being less than 10 nanometer intervals.
Accompanying drawing explanation
Fig. 1 is the structural representation that the present invention prepares the sample that each step obtains in the preparation of nano gap;
Fig. 2 is the electron-microscope scanning figure of the nano gap that the embodiment of the present invention 1 prepares;
Fig. 3 is the electron-microscope scanning figure of the nano gap that the embodiment of the present invention 2 prepares.
Embodiment
The invention provides a kind of preparation method of nano gap, comprising:
1) metallic film in the sample of deposition first metallic film carries out photoetching treatment, obtains the sample being protected the first metallic film by part photoresist;
2) do not protect the first metal of part to etch to the photoresist in the sample of the first metallic film of being protected by part photoresist obtained, obtain the sample after etching;
3) depositing metal oxide on sample after etching, obtains the sample depositing metal oxide;
4) to the metal oxide etching of horizontal direction deposition in the sample depositing metal oxide, the sample of the metal oxide eliminating horizontal direction deposition is obtained;
5) on the sample of metal oxide eliminating horizontal direction deposition, deposit the second metal, obtain the sample of deposition second metallic film;
6) the second metallic film on the photoresist in the sample of deposition second metallic film, photoresist and metal oxide are removed, obtain nano gap.
According to the present invention, the metallic film in the sample of deposition first metallic film carries out photoetching treatment, obtain the sample being protected the first metallic film by part photoresist; Described photoetching treatment be specially by photoresist apply, exposure, development and fixing; Wherein, described photoresist is preferably positive photoresist, is more preferably polymethyl methacrylate, auspicious red glue, ZEP glue; When described photoresist is polymethyl methacrylate, the weight average molecular weight of described polymethyl methacrylate is preferably 50000 ~ 950000, and more preferably 100000 ~ 800000, most preferably be 450000 ~ 600000, most preferably be 495000 ~ 550000.
Wherein, described coating is specially:
Metallic film in the sample of deposition first metallic film applies photoresist, obtains the sample scribbling photoresist; The mode of the present invention to coating is not particularly limited, coating method well known in the art, and photoresist is preferably dissolved in organic solvent by the present invention, is then coated on metallic film by spin-coating method by photoresist; Wherein, organic solvent is preferably one or both in chloroform and methyl phenyl ethers anisole; The mass percentage being dissolved in photoresist in the photoresist of organic solvent is preferably 1 ~ 9wt%, is more preferably 4 ~ 6wt%; In spin coating process, the rotating speed of spin coating is preferably 2000 ~ 6000 revolutions per seconds, more preferably 2000 revolutions per seconds; The present invention also comprises dries the sample scribbling photoresist, and the temperature of wherein drying is preferably 170-220 DEG C, more preferably 180 DEG C, and the time of oven dry is preferably 1 ~ 5 minute, more preferably 4 minutes.
Described exposure is specially:
The mode of described exposure is preferably electron beam exposure, deep UV lithography, extreme ultraviolet exposure or X-ray exposure, is more preferably electron beam exposure; When exposing for electron beam exposure, the accelerating voltage of described electron beam is preferably 10KV ~ 20KV, and exposure dose is preferably 70 ~ 210 μ C/cm
2;
In described development, developing time is preferably 30 seconds ~ 2 minutes; Described fixing in, fixing time is preferably 30 seconds ~ 2 minutes, is more preferably 1 minute.
In addition; in this step said protected by part photoresist in the sample of the first metallic film by the part that part photoresist is protected be according to pre-designed figure determine; the present invention does not have particular/special requirement to the protection position of photoresist and size; can according to actual needs, the position protected according to the routine techniques means design photoresist of those skilled in the art and size.
The film of described deposition first metal is preferably prepared in accordance with the following methods:
Deposited on substrates first metal, obtains the sample of deposition first metallic film;
Wherein, the kind of the present invention to backing material is not particularly limited, and well known to a person skilled in the art the backing material that can be applied to and prepare nano gap, and the present invention is preferably the compound substrate of silicon dioxide and silicon; The thickness of described substrate is preferably 100nm ~ 1 μm, is more preferably 200nm ~ 800nm, most preferably is 300nm ~ 500nm; Described first metal is preferably gold, silver, platinum or copper; The thickness of the first metal of described deposition is preferably 5nm ~ 200nm, is more preferably 10nm ~ 100nm, most preferably is 20nm ~ 50nm; The depositional mode of described deposition first metal is preferably argon ion sputtering deposition, magnetron sputtering deposition, thermal evaporation deposition or electron beam evaporation deposition, is more preferably electron beam evaporation deposition; When adopting electron beam evaporation deposition, described evaporation rate is preferably
preferably
According to the present invention, do not protect the first metal of part to etch to the photoresist in the sample of the first metallic film of being protected by part photoresist obtained, obtain the sample after etching; The method of the present invention to etching does not have particular/special requirement, and well known to a person skilled in the art lithographic method, the present invention preferably adopts argon ion etching.
According to the present invention, depositing metal oxide on sample after etching, obtains the sample depositing metal oxide; Described metal oxide is preferably dissolved in the metal oxide of acid or is dissolved in the metal oxide of alkali, is more preferably aluminium oxide, di-iron trioxide, calcium oxide, magnesium oxide or zinc oxide, most preferably is aluminium oxide; The thickness of the metal oxide of described deposition is preferably 1 ~ 20nm, is more preferably 2 ~ 8nm, most preferably is 3 ~ 5nm; The mode of the present invention to deposition does not have particular/special requirement, and the present invention preferably adopts Atomic layer deposition deposition techniques; And the said sample depositing metal oxide refers at the horizontal direction of sample and the equal depositing metal oxide of sidewall in the present invention; The horizontal direction of sample refers to the surface (comprise substrate) parallel with substrate, and as the part of removal first metal that is etched in substrate and the photoresist surface part parallel with substrate, sidewall refers to the face of photoresist and the first metal and substrate transverse.
According to the present invention, to the metal oxide etching of horizontal direction deposition in the sample depositing metal oxide, obtain the sample removing horizontal direction depositing metal oxide; The method of the present invention to etching does not have particular/special requirement, and well known to a person skilled in the art lithographic method, the present invention preferably adopts argon ion etching; It is to be noted, the metal oxide of horizontal direction deposition refers in sample the metal oxide of the direction deposition being parallel to substrate, specifically refer to that photoresist shows the metal oxide on the metal oxide of the part parallel with substrate and substrate, but do not comprise the metal oxide of side-wall metallic oxide and substrate intersection.
According to the present invention, the sample of metal oxide removing horizontal direction deposition deposits the second metal, obtains the sample of deposition second metallic film; Described second metal is preferably gold, silver, platinum or copper; The bimetallic thickness of described deposition is preferably 5nm ~ 200nm, is more preferably 10nm ~ 100nm, most preferably is 20nm ~ 50nm; The bimetallic depositional mode of described deposition is preferably argon ion sputtering deposition, magnetron sputtering deposition, thermal evaporation deposition or electron beam evaporation deposition, is more preferably electron beam evaporation deposition; When adopting electron beam evaporation deposition, described evaporation rate is preferably
preferably
According to the present invention, the photoresist in the sample of deposition second metallic film, the metallic film on photoresist and metal oxide are removed, obtains nano gap; Concrete, the present invention, by the sample of deposition second metallic film is placed in organic solvent, removes the second metallic film of photoresist and photoresist upper surface; Wherein, the present invention does not have particular/special requirement to organic solvent, the organic solvent being dissolved in photoresist well known in the art; Sample is placed in acid or aqueous slkali, the metal oxide of removing sample sidewall; The present invention is to acid or see do not have particular/special requirement, the acid of soluble metal oxide well known in the art or alkali.
And in order to the nano gap that the present invention is obtained relatively clean, the present invention preferably adopts deionized water to wash to the nano gap obtained, and dries up with nitrogen, obtains nano gap.
Concrete, the structural representation preparing the sample that each step obtains in the preparation of nano gap provided by the invention is shown in Fig. 1, and Fig. 1 is the structural representation that the present invention prepares the sample that each step obtains in the preparation of nano gap; Concrete, a structure is protected the sample of the first metallic film by part photoresist, and b structure is the sample after etching removing first metal; C structure is the sample depositing technology oxide; D structure is the sample of the metal oxide removing horizontal direction deposition, and e structure is the sample of deposition second metallic film, and f structure is nano gap; G structure is nano gap array.
Present invention also offers the nano gap that a kind of the present invention prepares and prepare the application in electronic device.
Method provided by the invention is at deposited on substrates first metallic film, resist coating on film again, the first metallic film scribbling photoresist is processed, obtain the sample that the first metallic film protected by part photoresist, then etching removing is not by the first metal that photoresist is protected, obtain the sample after etching, depositing metal oxide on sample after etching, obtains the sample depositing metal oxide; To the metal oxide etching of horizontal direction in the sample depositing metal oxide, obtain the sample removing horizontal direction metal oxide; The sample removing horizontal direction metal oxide deposits the second metal, obtains the sample of deposition second metallic film; The second metallic film on photoresist in the sample of deposition second metallic film, photoresist and metal oxide are removed, obtain nano gap, the nano gap prepared by the method not only has addressability, and due to by realizing nano gap in the form of side wall deposition metal oxide, make the gap width uniformity of the nano gap obtained good, success rate is high, and the interval of nano gap can at below 10nm, minimumly can be sub-nanometer scale.
Technical scheme below in conjunction with the embodiment of the present invention is clearly and completely described, and obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
By Si and SiO
2(wherein, the crystal lattice orientation of Si sheet is 111, SiO to the compound substrate of composition
2the thickness of layer is 300 nanometers) cut into the fritter of 1cm × 1cm, by acetone, absolute ethyl alcohol, deionized water ultrasonic five minutes respectively, nitrogen dried up for subsequent use, obtains substrate.
Substrate evaporates 30 nano-Au films by electron beam evaporation mode, evaporation rate
obtain the sample of deposited gold film;
On the sample of deposited gold film with the speed spin coating weight average molecular weight of the 4000 revolutions per seconds chloroformic solution that is 950000PMMAA4 (wherein, the mass percentage concentration of PMMA in the mixed solution of PMMA and chloroform is 4wt%), thermal station 180 DEG C of drying glues 4 minutes, obtain scribbling the sample that thickness is the photoresist of 280 nanometers.
The sample of PMMA spin coating is had to put into electron beam exposure apparatus (Raithe_Line), under the accelerating voltage of 15KV, with 150 μ C/cm
2dosage, the minimum step of 25.6nm exposes the figure designed in advance, develops 90 seconds, fixing one minute, obtain by part photoresist protection gold thin film sample.
Use argon ion to remove the gold thin film not having PMMA to protect, argon ion energy is 450eV, ion current density 70mA/cm
2, etch period one minute, obtains the sample after etching.
Use in Atomic layer deposition method sample after etching and deposit 5 nano aluminium oxide films, depositing temperature is 150 DEG C, obtains the sample depositing aluminium oxide.
Use argon ion etching to remove the aluminium oxide of horizontal direction deposition, argon ion energy is 450eV, ion current density 70mA/cm
2, etch period two minutes, obtains the sample of the aluminium oxide eliminating horizontal direction deposition;
The sample of aluminium oxide eliminating horizontal direction deposition evaporates 30 nano-Au films by electron beam evaporation mode, evaporation rate again
in evaporation process, open substrate rotate, obtain the sample of deposited gold film again;
Use acetone soln to soak the sample 12 hours of deposited gold film again, remove the gold thin film of photoresist and photoresist upper surface; Then use the aluminum oxide film in dilution heat of sulfuric acid removal metal gap, dilute sulfuric acid concentration is 0.004g/L, and solution stirs etching 8 hours, obtains nano gap crude product;
In deionization current, rinse nano gap crude product, remove residual sulfur acid solution, nitrogen dries up, and namely obtains the nano gap that gap size is 5 nanometers.
The nano gap that embodiment 1 prepares is detected, the results are shown in Figure the electron-microscope scanning figure that 2, Fig. 2 is the nano gap that the embodiment of the present invention 1 prepares.
Embodiment 2
By Si and SiO
2(wherein, the crystal lattice orientation of Si sheet is 111, SiO to the compound substrate of composition
2the thickness of layer is 300 nanometers) cut into the fritter of 1cm × 1cm, by acetone, absolute ethyl alcohol, deionized water ultrasonic five minutes respectively, nitrogen dried up for subsequent use, obtains substrate.
Substrate evaporates 30 nano-Au films by electron beam evaporation mode, evaporation rate
obtain the sample of deposited gold film;
On the sample of deposited gold film with the speed spin coating weight average molecular weight of the 4000 revolutions per seconds chloroformic solution that is 950000PMMAA4 (wherein, the mass percentage concentration of PMMA in the mixed solution of PMMA and chloroform is 4wt%), thermal station 180 DEG C of drying glues 4 minutes, obtain scribbling the sample that thickness is the photoresist of 280 nanometers.
The sample of PMMA spin coating is had to put into electron beam exposure apparatus (Raithe_Line), under the accelerating voltage of 15KV, with 150 μ C/cm
2dosage, the minimum step of 25.6nm exposes the figure designed in advance, develops 90 seconds, fixing one minute, obtain by part photoresist protection gold thin film sample.
Use argon ion to remove the gold thin film not having PMMA to protect, argon ion energy is 450eV, ion current density 70mA/cm
2, etch period one minute, obtains the sample after etching.
Use in Atomic layer deposition method sample after etching and deposit 8 nano aluminium oxide films, depositing temperature is 150 DEG C, obtains the sample depositing aluminium oxide.
Use argon ion etching to remove the aluminium oxide of horizontal direction deposition, argon ion energy is 450eV, ion current density 70mA/cm
2, etch period two minutes, obtains the sample of the aluminium oxide eliminating horizontal direction deposition;
The sample of aluminium oxide eliminating horizontal direction deposition evaporates 30 nano silver films by electron beam evaporation mode, evaporation rate again
in evaporation process, open substrate rotate, obtain the sample of depositing silver film;
Use acetone soln to soak the sample 12 hours of deposited gold film again, remove the gold thin film of photoresist and photoresist upper surface; Then use the aluminum oxide film in dilution heat of sulfuric acid removal metal gap, dilute sulfuric acid concentration is 0.004g/L, and solution stirs etching 8 hours, obtains nano gap crude product;
In deionization current, rinse nano gap crude product, remove residual sulfur acid solution, nitrogen dries up, and namely obtains the nano gap that gap size is 8 nanometers.
The nano gap that embodiment 2 prepares is detected, the results are shown in Figure the electron-microscope scanning figure that 3, Fig. 3 is the nano gap that the embodiment of the present invention 1 prepares.
The explanation of above embodiment just understands method of the present invention and core concept thereof for helping.It should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention, can also carry out some improvement and modification to the present invention, these improve and modify and also fall in the protection range of the claims in the present invention.
Claims (10)
1. a preparation method for nano gap, comprising:
1) metallic film in the sample of deposition first metallic film carries out photoetching treatment, obtains the sample being protected the first metallic film by part photoresist;
2) do not protect the first metal of part to etch to the photoresist in the sample of the first metallic film of being protected by part photoresist obtained, obtain the sample after etching;
3) depositing metal oxide on sample after etching, obtains the sample depositing metal oxide;
4) to the metal oxide etching of horizontal direction deposition in the sample depositing metal oxide, the sample of the metal oxide eliminating horizontal direction deposition is obtained;
5) on the sample of metal oxide eliminating horizontal direction deposition, deposit the second metal, obtain the sample of deposition second metallic film;
6) the second metallic film on the photoresist in the sample of deposition second metallic film, photoresist and metal oxide are removed, obtain nano gap.
2. preparation method according to claim 1, is characterized in that, described first metal is gold, silver, platinum or copper.
3. preparation method according to claim 1, is characterized in that, described second metal is gold, silver, platinum or copper.
4. preparation method according to claim 1, is characterized in that, described metal oxide is be dissolved in the metal oxide of acid or be dissolved in the metal oxide of alkali.
5. preparation method according to claim 1, is characterized in that, described step 1) photoetching treatment comprise the coating of photoresist, exposure, development and fixing;
Wherein, described photoresist is positive photoresist.
6. preparation method according to claim 5, is characterized in that, the Exposure mode of described exposure is electron beam exposure, deep UV lithography, extreme ultraviolet exposure, X-ray exposure or nano impression.
7. preparation method according to claim 1, is characterized in that, described step 2) etching be argon ion etching.
8. preparation method according to claim 1, is characterized in that, described step 3) in the depositional mode of depositing metal oxide be Atomic layer deposition.
9. preparation method according to claim 1, is characterized in that, described step 5) the depositional mode of deposition first metal be argon ion sputtering deposition, magnetron sputtering deposition, thermal evaporation deposition or electron beam evaporation deposition.
10. nano gap prepared by the preparation method described in claim 1 ~ 9 any one is preparing the application in electronic device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510532295.1A CN105206508A (en) | 2015-08-24 | 2015-08-24 | Preparation method of nanometer clearance and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510532295.1A CN105206508A (en) | 2015-08-24 | 2015-08-24 | Preparation method of nanometer clearance and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105206508A true CN105206508A (en) | 2015-12-30 |
Family
ID=54954108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510532295.1A Pending CN105206508A (en) | 2015-08-24 | 2015-08-24 | Preparation method of nanometer clearance and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105206508A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108502840A (en) * | 2018-03-29 | 2018-09-07 | 中国科学技术大学 | A kind of method that high efficiency prepares cyclic annular nano gap oldered array |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1828849A (en) * | 2005-01-10 | 2006-09-06 | 韩国科学技术院 | Method of forming a nanogap and method of manufacturing a nano field effect transitor for molecular device and bio-sensor, and molecular device and bio-sensor manufactured using the same |
| US20090283693A1 (en) * | 2006-06-09 | 2009-11-19 | The Government Of The United States Of America, | Integrally gated carbon nanotube ionizer device |
| CN101767766A (en) * | 2010-01-29 | 2010-07-07 | 北京大学 | Method for manufacturing nanometer space in micro-nano mechanical device |
| US20130266729A1 (en) * | 2012-04-05 | 2013-10-10 | Hon Hai Precision Industry Co., Ltd. | Method for making strip shaped graphene layer |
| CN104465337A (en) * | 2014-12-03 | 2015-03-25 | 复旦大学 | Method for manufacturing metal nanometer slit through PMMA/NEB double-layer glue |
-
2015
- 2015-08-24 CN CN201510532295.1A patent/CN105206508A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1828849A (en) * | 2005-01-10 | 2006-09-06 | 韩国科学技术院 | Method of forming a nanogap and method of manufacturing a nano field effect transitor for molecular device and bio-sensor, and molecular device and bio-sensor manufactured using the same |
| US20090283693A1 (en) * | 2006-06-09 | 2009-11-19 | The Government Of The United States Of America, | Integrally gated carbon nanotube ionizer device |
| CN101767766A (en) * | 2010-01-29 | 2010-07-07 | 北京大学 | Method for manufacturing nanometer space in micro-nano mechanical device |
| US20130266729A1 (en) * | 2012-04-05 | 2013-10-10 | Hon Hai Precision Industry Co., Ltd. | Method for making strip shaped graphene layer |
| CN104465337A (en) * | 2014-12-03 | 2015-03-25 | 复旦大学 | Method for manufacturing metal nanometer slit through PMMA/NEB double-layer glue |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108502840A (en) * | 2018-03-29 | 2018-09-07 | 中国科学技术大学 | A kind of method that high efficiency prepares cyclic annular nano gap oldered array |
| CN108502840B (en) * | 2018-03-29 | 2020-08-28 | 中国科学技术大学 | Method for efficiently preparing annular nanogap ordered array |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6824141B2 (en) | Patterned inorganic layers, radiation patterning compositions, and corresponding methods | |
| CN105271103B (en) | Nano-structure array and preparation method and application thereof | |
| Zhang et al. | Wafer‐Scale Highly Ordered Anodic Aluminum Oxide by Soft Nanoimprinting Lithography for Optoelectronics Light Management | |
| CN106809802A (en) | The preparation method of large-area metal nanometer pinpoint array in a kind of flexible substrate | |
| Girardot et al. | Pulsed transfer etching of PS–PDMS block copolymers self-assembled in 193 nm lithography stacks | |
| CN101813884B (en) | Method for preparing nano-structured matrix on surface of uneven substrate | |
| Guo et al. | Controllable patterning of hybrid silicon nanowire and nanohole arrays by laser interference lithography | |
| Yang et al. | Energy dependence of morphologies on photoresist surfaces under Ar+ ion bombardment with normal incidence | |
| CN105206508A (en) | Preparation method of nanometer clearance and application thereof | |
| Zhao et al. | Transfer and control of the orientation of 3D nanostructures fabricated by nanoskiving | |
| Wang et al. | All-water etching-free electron beam lithography for on-chip nanomaterials | |
| Gebremichael et al. | Controlling metal halide perovskite crystal growth via microcontact printed hydrophobic‐hydrophilic templates | |
| JP2005217390A (en) | Forming method for nanostructure | |
| HerzogAntonia | Pollen-like particles can be prepared by exposure of polymer microparticles to an electron beam | |
| FI130437B (en) | A method and a system for generating a high-resolution pattern on a substrate | |
| Asakura et al. | Fabrication of high-density copper microstructures using vacuum ultraviolet light lithography and hydrofluoric acid etching treatment | |
| US20230399736A1 (en) | A method and a system for generating a high-resolution pattern on a substrate | |
| Fan | Study of in-plane silicon nanowires obtained via a solid-liquid-solid growth process and their self-organization for electronic applications | |
| Wilson et al. | Scalable Nanomanufacturing of Metasurfaces Using Nanosphere Photolithography | |
| Vora et al. | Nanostencil lithography for fabrication of III-V nanostructures | |
| Chen et al. | Formation of self-organized nanostructures on Si surfaces during low energy ion beam erosion |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151230 |
|
| RJ01 | Rejection of invention patent application after publication |