CN105185884A - Flexible two-dimensional material light emitting device - Google Patents
Flexible two-dimensional material light emitting device Download PDFInfo
- Publication number
- CN105185884A CN105185884A CN201510320484.2A CN201510320484A CN105185884A CN 105185884 A CN105185884 A CN 105185884A CN 201510320484 A CN201510320484 A CN 201510320484A CN 105185884 A CN105185884 A CN 105185884A
- Authority
- CN
- China
- Prior art keywords
- metal electrode
- layer
- flexible
- metal
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0037—Devices characterised by their operation having a MIS barrier layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0041—Devices characterised by their operation characterised by field-effect operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to a flexible two-dimensional material light emitting device. The flexible two-dimensional material light emitting device sequentially comprises a flexible substrate layer (1), a first metal layer, a medium layer (4), a two-dimensional semiconductor material layer (5) and a second metal layer which is arranged on the medium layer (4) and at two ends of the two-dimensional semiconductor material layer (5). Compared with the prior art, the flexible two-dimensional material light emitting device has advantages of good portability, fast photoelectric response speed, high integration density, good processing performance and low cost.
Description
Technical field
The present invention relates to a kind of luminescent device, especially relate to a kind of flexible two-dimensional material luminescent device.
Background technology
Transient metal sulfide two-dimension nano materials, as MoS
2, MoSe
2, MoTe
2, WS
2becoming high-performance nano photoelectric device of new generation Deng, is one of core material of international forward position research.Individual layer MoS
2electron mobility at room temperature can reach 200cm
2/ Vs, on-off ratio is up to 1 × 10
8, when obtaining the electron motion of effect same, MoS
2more frivolous than Si, energy consuming ratio Si transistor is little 100,000 times at steady state, simultaneously MoS
2there is direct band gap, use MoS
2the luminescent device made has excellent photoelectric properties.In addition, based on MoS
2flexible characteristic, device is flexible with stretching, extension, numerous new application field of being born thus.
But existing two-dimensional semiconductor material mainly in technology of preparing cost higher, use two-dimensional semiconductor prepare heterostructure needs at MoS
2in adulterate, in technique complicated difficult with realize, be difficult to realize batch production.
Summary of the invention
Object of the present invention is exactly to overcome the defect and the flexible two-dimensional material luminescent device that provides a kind of good portability, cost low that above-mentioned prior art exists.
Object of the present invention can be achieved through the following technical solutions:
A kind of flexible two-dimensional material luminescent device, this luminescent device comprises flexible substrate layer, the first metal layer, dielectric layer, two-dimensional semiconductor material layer from top to bottom successively, and to be arranged on dielectric layer and to be positioned at second metal level at two-dimensional semiconductor material layer two ends, dielectric layer is as grid, second metal level two ends respectively as source electrode and drain electrode, thus form MOS structure.
The left and right sides of described the first metal layer is respectively equipped with the first metal electrode and the second metal electrode, the two ends, left and right of the second described metal level are respectively equipped with the 3rd metal electrode and the 4th metal electrode, wherein, the 3rd metal electrode is source electrode, and the 4th metal electrode is drain electrode;
During work, the 3rd described metal electrode ground connection, reverse biased is applied between first metal electrode and the 3rd metal electrode, forward bias is applied between second metal electrode and the 3rd metal electrode, two-dimensional semiconductor material layer inside is made to form PN junction, two-dimensional semiconductor material layer contacts one end accumulating electrons of the 3rd metal electrode, form N pole, contact the accumulation hole, one end of the 4th metal electrode, form P pole, when applying forward bias between source electrode and drain electrode, the inner Carrier recombination of PN junction, namely sending wavelength is 500 ~ 700nm ruddiness.
The first described metal electrode and the material of the second metal electrode are gold, and its thickness is within 200nm.
The 3rd described metal electrode and the material of the 4th metal electrode are gold, aluminium or titanium, and its thickness is within 300nm.
Described flexible substrate layer adopts flexible material to make, and this flexible material is ultra-thin glass, high molecular polymer or tinsel.
Described high molecular polymer is selected from the one in polyimides, PEN and PETG.
Described tinsel is the one in pure gold paillon foil, silver foil sheet, copper foil or aluminium foil.。
The dielectric material of described dielectric layer is selected from organic material, transparent Al
2o
3with the one in ferroelectric media, the thickness of dielectric layer is in 50nm.Described organic material is the one in poly-four phenol ethylenes, polyvinylpyrrolidone or polymethyl methacrylate.
The material of partly leading of described two-dimensional semiconductor material layer is MoS
2.
The preparation method of above-mentioned flexible two-dimensional material luminescent device comprises the following steps:
(1) substrate is cleaned: flexible substrate layer cleaned up, backing material is ultra-thin glass, high molecular polymer or tinsel;
(2) the first metal layer is made: by electron beam evaporation deposit the first metal layer in flexible substrate layer, the first metal layer comprises two metal electrodes, is the first metal electrode respectively, the second metal electrode.Metal electrode material is gold, and thickness is within 200nm;
(3) dielectric layer is made: above metal electrode layer, grow one deck dielectric layer by atomic layer deposition, dielectric layer material is organic material, transparent Al
2o
3or ferroelectric media, thickness of dielectric layers is within 50nm; Described organic material is the one in poly-four phenol ethylenes, polyvinylpyrrolidone or polymethyl methacrylate.
(4) two-dimensional semiconductor material layer: cover one deck MoS by the method for transfer techniques on dielectric layer
2;
(5) source, drain electrode is made: with PMMA as photoresist, by electron beam lithography at MoS
23rd, the 4th metal electrode of the two ends difference making devices of layer, the 3rd metal electrode is source electrode, and the 4th metal electrode is drain electrode, and the material of source electrode and drain electrode is gold, aluminium or titanium, and thickness is within 200nm.
Compared with prior art, the present invention has the following advantages:
(1) relatively traditional silicon-based substrate cannot meet portable, wear-resistant, scalable, and the technical disadvantages of higher clarity, the material that the present invention adopts all has flexible extensile flexible characteristic, and after bending, the electric property of device remains unchanged, flexible detection can be realized, be easy to carry, scalable, plasticity is strong;
(2) photoelectric response speed is fast: semiconductor MoS
2carrier mobility far above silicon materials carrier mobility, the present invention has very high photoelectric response speed;
(3) production cost is low, easy realizes batch production: the luminescent device that the present invention adopts solves that two-dimensional material doping process is complicated, cost is high and is difficult to realize the technical problem of batch production, and technique is simple, easily realizes batch production technically;
(4) high, the good processability of integration density: the present invention adopts flexibility, transparent flexible substrate, the photoelectric device of preparation can bend arbitrarily, and light transmission is good, individual devices size is at a hundreds of microns, by large-scale integrated, prepare efficient opto-electronic conversion battery, there is good processing characteristics, adopt this structure can realize electronic device, the micro-nano of photoelectric device, high-density integrated in the electronics industry, prepare the electronic product that build is less, quality is lighter, performance is more steady, have broad application prospects.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is the vertical view of the two-dimentional luminescent device of flexibility of the present invention;
Fig. 3 is the PN energy band diagram of the PN junction in two-dimensional semiconductor material layer of the present invention;
In figure, flexible substrate layer 1, the first metal electrode 2, second metal electrode 3, dielectric layer 4, two-dimensional semiconductor material layer the 5, three metal electrode the 6, four metal electrode 7.
Embodiment
Hereafter in conjunction with the execution mode that particular instance illustrates, embodiment herein and various characteristic sum Advantageous details carry out more complete explanation with reference to the non-limiting example described in detail in diagram in accompanying drawing and following description.Omit the description of well-known parts and treatment technology, in order to avoid the unnecessary embodiment indigestion made herein.When making described structure, well-known traditional handicraft in semiconductor technology can be used.Example used herein is only used to help to understand embodiment herein can effective mode, and the embodiment making those skilled in the art can implement herein further.Thus, example herein should be interpreted as the scope of restriction embodiment herein.
Refer to accompanying drawing.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then graphicly only the assembly relevant with the present invention is shown but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Embodiment 1
As shown in Figure 1, a kind of flexible two-dimensional material luminescent device, for the ruddiness of emission wavelength 500 ~ 700nm, this luminescent device comprises flexible substrate layer 1, the first metal layer, dielectric layer 4, two-dimensional semiconductor material layer 5 from top to bottom successively, and to be arranged on dielectric layer 4 and to be positioned at second metal level at two-dimensional semiconductor material layer 5 two ends, flexible substrate layer 1 adopts PETG to make, and dielectric layer 4 is by transparent Al
2o
3make, the thickness of dielectric layer 4 is in 50nm, and the material of partly leading of two-dimensional semiconductor material layer 5 is MoS
2, dielectric layer 4 is as grid, and the second metal level two ends respectively as source electrode and drain electrode, thus form MOS structure;
The material that the left and right sides of the first metal layer is respectively equipped with the first metal electrode 2 and the second metal electrode 3, first metal electrode 2 and the second metal electrode 3 is gold, and its thickness is within 200nm; The two ends, left and right of the second metal level are respectively equipped with the 3rd metal electrode 6 and the 4th metal electrode 7, wherein, the 3rd metal electrode 6 is source electrode, and the 4th metal electrode 7 is drain electrode, the material of the 3rd metal electrode 6 and the 4th metal electrode 7 is gold, and its thickness is within 300nm;
During work, 3rd metal electrode 6 ground connection, reverse biased is applied between first metal electrode 2 and the 3rd metal electrode 6, forward bias is applied between second metal electrode 3 and the 3rd metal electrode 6, two-dimensional semiconductor material layer 5 inside is made to form PN junction, two-dimensional semiconductor material layer 5 contacts one end accumulating electrons of the 3rd metal electrode 6, form N pole, contact the accumulation hole, one end of the 4th metal electrode 7, form P pole, when applying forward bias between source electrode and drain electrode, the inner Carrier recombination of PN junction, namely sends the ruddiness that wavelength is 500 ~ 700nm.
The preparation method of above-mentioned flexible two-dimensional material luminescent device comprises the following steps:
(1) substrate is cleaned: flexible substrate layer cleaned up, backing material is PETG;
(2) the first metal layer is made: by electron beam evaporation deposit the first metal layer in flexible substrate layer, the first metal layer comprises two metal electrodes, is the first metal electrode respectively, the second metal electrode.Metal electrode material is gold, and thickness is within 200nm;
(3) dielectric layer is made: above metal electrode layer, grow layer of transparent medium A l by atomic layer deposition
2o
3, thickness of dielectric layers is within 50nm;
(4) two-dimensional semiconductor material layer: cover one deck MoS by the method for transfer techniques on dielectric layer
2;
(5) source, drain electrode is made: with PMMA as photoresist, by electron beam lithography at MoS
23rd, the 4th metal electrode of the two ends difference making devices of layer, the 3rd metal electrode is source electrode, and the 4th metal electrode is drain electrode, and the material of source electrode and drain electrode is gold, and thickness is within 200nm.
In luminescent device, 3rd metal electrode 6 ground connection, reverse biased is applied between first metal electrode 2 and the 3rd metal electrode 6, forward bias is applied between second metal electrode 3 and the 3rd metal electrode 6, two-dimensional semiconductor material layer inside is made to form PN junction, as shown in Figure 3, two-dimensional semiconductor material layer contacts one end accumulation electronics of the 3rd metal electrode, form N pole, contact the accumulation hole, one end of the 4th metal electrode, form P pole, when applying forward bias between source-drain electrode, the inner Carrier recombination of PN junction, sends the ruddiness of 500 ~ 700nm.In luminescent device, the locus of the first metal electrode 2, second metal electrode 3, the 3rd metal electrode 6, the 4th metal electrode 7 as shown in Figure 2.
Embodiment 2
A kind of flexible two-dimensional material luminescent device, for the ruddiness of emission wavelength 500 ~ 700nm, this luminescent device comprises flexible substrate layer, the first metal layer, dielectric layer, two-dimensional semiconductor material layer from top to bottom successively, and to be arranged on dielectric layer and to be positioned at second metal level at two-dimensional semiconductor material layer two ends, flexible substrate layer adopts polyimides to make, dielectric layer is made up of ferroelectric media, and the thickness of dielectric layer is 50nm, and the material of partly leading of two-dimensional semiconductor material layer is MoS
2, dielectric layer is as grid, and the second metal level two ends respectively as source electrode and drain electrode, thus form MOS structure;
The left and right sides of the first metal layer is respectively equipped with the first metal electrode and the second metal electrode, and the material of the first metal electrode and the second metal electrode is gold, and its thickness is 200nm; The two ends, left and right of the second metal level are respectively equipped with the 3rd metal electrode and the 4th metal electrode, and wherein, the 3rd metal electrode is source electrode, and the 4th metal electrode is drain electrode, and the material of the 3rd metal electrode and the 4th metal electrode is gold, and its thickness is 300nm.
Embodiment 3
A kind of flexible two-dimensional material luminescent device, for the ruddiness of emission wavelength 500 ~ 700nm, this luminescent device comprises flexible substrate layer, the first metal layer, dielectric layer, two-dimensional semiconductor material layer from top to bottom successively, and to be arranged on dielectric layer and to be positioned at second metal level at two-dimensional semiconductor material layer two ends, flexible substrate layer adopts PEN to make, and dielectric layer is the one that organic material gathers in four phenol ethylenes, polyvinylpyrrolidone or polymethyl methacrylate.The thickness of dielectric layer is at 10nm, and the material of partly leading of two-dimensional semiconductor material layer is MoS
2, dielectric layer is as grid, and the second metal level two ends respectively as source electrode and drain electrode, thus form MOS structure;
The left and right sides of the first metal layer is respectively equipped with the first metal electrode and the second metal electrode, and the material of the first metal electrode and the second metal electrode is gold, and its thickness is 100nm; The two ends, left and right of the second metal level are respectively equipped with the 3rd metal electrode and the 4th metal electrode, and wherein, the 3rd metal electrode is source electrode, and the 4th metal electrode is drain electrode, and the material of the 3rd metal electrode and the 4th metal electrode is aluminium, and its thickness is 150nm.
Embodiment 4
A kind of flexible two-dimensional material luminescent device, for the ruddiness of emission wavelength 500 ~ 700nm, this luminescent device comprises flexible substrate layer, the first metal layer, dielectric layer, two-dimensional semiconductor material layer from top to bottom successively, and to be arranged on dielectric layer and to be positioned at second metal level at two-dimensional semiconductor material layer two ends, flexible substrate layer adopts ultra-thin glass to make, and dielectric layer is the one that organic material gathers in four phenol ethylenes, polyvinylpyrrolidone or polymethyl methacrylate.The thickness of dielectric layer is 20nm, and the material of partly leading of two-dimensional semiconductor material layer is MoS
2, dielectric layer is as grid, and the second metal level two ends respectively as source electrode and drain electrode, thus form MOS structure;
The left and right sides of the first metal layer is respectively equipped with the first metal electrode and the second metal electrode, and the material of the first metal electrode and the second metal electrode is gold, and its thickness is 50nm; The two ends, left and right of the second metal level are respectively equipped with the 3rd metal electrode and the 4th metal electrode, and wherein, the 3rd metal electrode is source electrode, and the 4th metal electrode is drain electrode, and the material of the 3rd metal electrode and the 4th metal electrode is titanium, and its thickness is 100nm.
Embodiment 5
A kind of flexible two-dimensional material luminescent device, for the ruddiness of emission wavelength 500 ~ 700nm, this luminescent device comprises flexible substrate layer, the first metal layer, dielectric layer, two-dimensional semiconductor material layer from top to bottom successively, and to be arranged on dielectric layer and to be positioned at second metal level at two-dimensional semiconductor material layer two ends, flexible substrate layer adopts tinsel to make, and dielectric layer is the one that organic material gathers in four phenol ethylenes, polyvinylpyrrolidone or polymethyl methacrylate.The thickness of dielectric layer is at 15nm, and the material of partly leading of two-dimensional semiconductor material layer is MoS
2, dielectric layer is as grid, and the second metal level two ends respectively as source electrode and drain electrode, thus form MOS structure;
The left and right sides of the first metal layer is respectively equipped with the first metal electrode and the second metal electrode, and the material of the first metal electrode and the second metal electrode is gold, and its thickness is 20nm; The two ends, left and right of the second metal level are respectively equipped with the 3rd metal electrode and the 4th metal electrode, and wherein, the 3rd metal electrode is source electrode, and the 4th metal electrode is drain electrode, and the material of the 3rd metal electrode and the 4th metal electrode is gold, and its thickness is 200nm.
Claims (8)
1. a flexible two-dimensional material luminescent device, it is characterized in that, this luminescent device comprises flexible substrate layer (1), the first metal layer, dielectric layer (4), two-dimensional semiconductor material layer (5) from top to bottom successively, and is arranged on dielectric layer (4) and goes up and the second metal level being positioned at two-dimensional semiconductor material layer (5) two ends.
2. the flexible two-dimensional material luminescent device of one according to claim 1, it is characterized in that, the left and right sides of described the first metal layer is respectively equipped with the first metal electrode (2) and the second metal electrode (3), the two ends, left and right of the second described metal level are respectively equipped with the 3rd metal electrode (6) and the 4th metal electrode (7), wherein, 3rd metal electrode (6) is source electrode, 4th metal electrode (7) is drain electrode, forms MOS structure;
During work, the 3rd described metal electrode (6) ground connection, reverse biased is applied between first metal electrode (2) and the 3rd metal electrode (6), forward bias is applied between second metal electrode (3) and the 3rd metal electrode (6), two-dimensional semiconductor material layer (5) inside is made to form PN junction, when applying forward bias between source electrode and drain electrode, the inner Carrier recombination of PN junction, namely sends wavelength 500 ~ 700nm ruddiness.
3. the flexible two-dimensional material luminescent device of one according to claim 2, is characterized in that, described the first metal electrode (2) and the material of the second metal electrode (3) are gold, and its thickness is within 200nm.
4. the flexible two-dimensional material luminescent device of one according to claim 2, is characterized in that, the 3rd described metal electrode (6) and the material of the 4th metal electrode (7) are gold, aluminium or titanium, and its thickness is within 300nm.
5. the flexible two-dimensional material luminescent device of one according to claim 1, is characterized in that, described flexible substrate layer (1) adopts flexible material to make, and this flexible material is ultra-thin glass, high molecular polymer or tinsel.
6. a kind of flexible thermal power conversion device based on Graphene heterojunction according to claim 5, it is characterized in that, described high molecular polymer is selected from the one in polyimides, PEN and PETG.
7. the flexible two-dimensional material luminescent device of one according to claim 1, is characterized in that, the dielectric material of described dielectric layer (4) is selected from organic material, transparent Al
2o
3with the one in ferroelectric media, the thickness of dielectric layer (4) is in 50nm; Described organic material is the one in poly-four phenol ethylenes, polyvinylpyrrolidone or polymethyl methacrylate.
8. the flexible two-dimensional material luminescent device of one according to claim 1, is characterized in that, the material of partly leading of described two-dimensional semiconductor material layer (5) is MoS
2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510320484.2A CN105185884A (en) | 2015-06-11 | 2015-06-11 | Flexible two-dimensional material light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510320484.2A CN105185884A (en) | 2015-06-11 | 2015-06-11 | Flexible two-dimensional material light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105185884A true CN105185884A (en) | 2015-12-23 |
Family
ID=54907854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510320484.2A Pending CN105185884A (en) | 2015-06-11 | 2015-06-11 | Flexible two-dimensional material light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105185884A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018119814A1 (en) * | 2016-12-27 | 2018-07-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | Photonic integrated device and preparation method therefor |
| CN108695414A (en) * | 2018-05-18 | 2018-10-23 | 中国科学院半导体研究所 | On piece infrared LED and preparation method based on two-dimensional material hetero-junctions |
| CN109698260A (en) * | 2019-01-30 | 2019-04-30 | 上海电力学院 | The luminescent device of two-dimensional material luminous intensity and peak position can be precisely controlled |
| CN109950403B (en) * | 2019-03-29 | 2024-03-26 | 中国科学院上海技术物理研究所 | Ferroelectric field regulated two-dimensional material PN junction photoelectric detector and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1725455A (en) * | 2004-07-19 | 2006-01-25 | 精工爱普生株式会社 | Method for fabricating a semiconductor element from a dispersion of semiconductor particles |
| US20140284631A1 (en) * | 2011-10-28 | 2014-09-25 | Georgetown University | METHOD AND SYSTEM FOR GENERATING A PHOTO-RESPONSE FROM MoS2 SCHOTTKY JUNCTIONS |
-
2015
- 2015-06-11 CN CN201510320484.2A patent/CN105185884A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1725455A (en) * | 2004-07-19 | 2006-01-25 | 精工爱普生株式会社 | Method for fabricating a semiconductor element from a dispersion of semiconductor particles |
| US20140284631A1 (en) * | 2011-10-28 | 2014-09-25 | Georgetown University | METHOD AND SYSTEM FOR GENERATING A PHOTO-RESPONSE FROM MoS2 SCHOTTKY JUNCTIONS |
Non-Patent Citations (2)
| Title |
|---|
| DEEP JARIWALA ET AL: "Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides", 《ASC NANO》 * |
| JIANG PU ET AL: "Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics", 《NANO LETTER》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018119814A1 (en) * | 2016-12-27 | 2018-07-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | Photonic integrated device and preparation method therefor |
| US11004893B2 (en) | 2016-12-27 | 2021-05-11 | Qingdao Yichenleishuo Technology Co., Ltd | Photonic integrated device and manufacturing method thereof |
| CN108695414A (en) * | 2018-05-18 | 2018-10-23 | 中国科学院半导体研究所 | On piece infrared LED and preparation method based on two-dimensional material hetero-junctions |
| CN109698260A (en) * | 2019-01-30 | 2019-04-30 | 上海电力学院 | The luminescent device of two-dimensional material luminous intensity and peak position can be precisely controlled |
| CN109698260B (en) * | 2019-01-30 | 2024-02-27 | 上海电力学院 | Light-emitting device capable of precisely controlling light-emitting intensity and peak position of two-dimensional material |
| CN109950403B (en) * | 2019-03-29 | 2024-03-26 | 中国科学院上海技术物理研究所 | Ferroelectric field regulated two-dimensional material PN junction photoelectric detector and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Yang et al. | An 8.68% efficiency chemically-doped-free graphene–silicon solar cell using silver nanowires network buried contacts | |
| Lin et al. | Graphene/semiconductor heterojunction solar cells with modulated antireflection and graphene work function | |
| Lu et al. | Piezoelectric nanogenerator using p-type ZnO nanowire arrays | |
| He et al. | A van der Waals pn heterojunction with organic/inorganic semiconductors | |
| Weisse et al. | Fabrication of flexible and vertical silicon nanowire electronics | |
| Pryce et al. | Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells | |
| Ye et al. | Graphene-based Schottky junction solar cells | |
| Zhao et al. | Self-powered, high-speed and visible–near infrared response of MoO3–x/n-Si heterojunction photodetector with enhanced performance by interfacial engineering | |
| Lee et al. | Graphene-based transparent conductive films | |
| Cho et al. | Molecular monolayers for conformal, nanoscale doping of InP nanopillar photovoltaics | |
| Fan et al. | Emerging devices based on two-dimensional monolayer materials for energy harvesting | |
| KR102526649B1 (en) | Semiconductor device including two-dimensional material and method of manufacturing the same | |
| Cui et al. | Multifunctional graphene and carbon nanotube films for planar heterojunction solar cells | |
| CN105185884A (en) | Flexible two-dimensional material light emitting device | |
| CN102339735B (en) | Preparation method for graphene transistor | |
| Son et al. | Transparent and flexible ultraviolet photodetectors based on colloidal ZnO quantum dot/graphene nanocomposites formed on poly (ethylene terephthalate) substrates | |
| CN102354668B (en) | Preparation method of carbon-based nanometer material transistor | |
| CN105023969A (en) | A luminous absorption enhanced graphene transistor based on a metal nanostructure | |
| CN103646855A (en) | Manufacturing method of graphene device | |
| KR101571351B1 (en) | Production method of silicon-graphene heterojunction solar cell and silicon-graphene heterojunction solar cell producted by the same | |
| Li et al. | Dry exfoliation of large-area 2D monolayer and heterostructure arrays | |
| Xu et al. | Multilayer graphene with chemical modification as transparent conducting electrodes in organic light-emitting diode | |
| Liu et al. | Hybrid film of silver nanowires and carbon nanotubes as a transparent conductive layer in light-emitting diodes | |
| Kadam et al. | Enhanced and passivated Co-doping effect of organic molecule and bromine on graphene/HfO2/silicon metal–insulator–semiconductor (MIS) Schottky junction solar cells | |
| CN107123468B (en) | A kind of transparent conductive film containing function point analysis layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151223 |
|
| RJ01 | Rejection of invention patent application after publication |