CN105119516A - Quasi Z-source inverter with high boost gain - Google Patents
Quasi Z-source inverter with high boost gain Download PDFInfo
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- CN105119516A CN105119516A CN201510594072.8A CN201510594072A CN105119516A CN 105119516 A CN105119516 A CN 105119516A CN 201510594072 A CN201510594072 A CN 201510594072A CN 105119516 A CN105119516 A CN 105119516A
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Abstract
The invention relates to a quasi Z-source inverter with high boost gain. The quasi Z-source inverter comprises a DC power supply Vin, a quasi Z-source boost network, and a three-phase inverter. The quasi Z-source boost network comprises a tap inductor, a first diode D1, a first capacitor C1, a second capacitor C2, and a switched inductor group. When the three-phase inverter is in a non shoot-through state, the tap inductor charges the first capacitor C1 and the switched inductor group charges the second capacitor C2 in order to improve the boost capability of the Z-source inverter and reduce the voltage stress of the first capacitor C1, the second capacitor C2, and the switched inductor group. Compared with a product in the prior art, the quasi Z-source inverter uses single-stage structure and reduces circuit size and cost. A shoot-through zero vector enables the top bridge arm and the bottom bridge arm of an inverter bridge to be simultaneously switched on, thereby improving circuit security. The quasi Z-source inverter reduces voltage stress of devices while achieving high boost gain.
Description
Technical field
The present invention relates to a kind of converters, especially relate to the accurate Z-source inverter of a kind of high boosting gain.
Background technology
Along with the worsening shortages of the energy, environmental pollution are serious, clean energy resource more and more receives the concern of people, as wind power generation, photovoltaic generation etc., obtains development by leaps and bounds in the industry cycle.But, the impact of the change of natural environmental condition to be subject to due to part clean energy resource as the output voltage of wind power generation, photovoltaic generation, for the problems referred to above, to need before inverter circuit, add one-level DC-DC conversion circuit.This structure can cause circuit cost to increase, conversion efficiency decline etc. problem.In order to address this problem, Peng Fang full professor proposes a kind of Z-source inverter.
DC-DC conversion circuit and DC-AC translation circuit are coupled by Z-source inverter, and introduce the concept of shoot-through zero vector, make inverter bridge upper and lower bridge arm can simultaneously conducting, add the fail safe of circuit.Therefore Z-source inverter overcomes the restriction of conventional inverter, improves energy conversion efficiency and circuit reliability, reduction circuit cost.Above-mentioned good characteristic makes Z-source inverter have development prospect widely in clean energy resource field.
But, the same Shortcomings of Z-source inverter is as higher in Z-source inverter device voltage stress, boost capability is not enough etc.Therefore, the improvement of Z-source inverter topology is necessary.
Accurate Z-source inverter circuit topology is developed by Z-source inverter topology, it is the class novel circuit topological proposed in recent years, because it has plurality of advantages, in the renewable energy power generation such as photovoltaic, fuel cell field, there is important researching value and wide application prospect.Accurate Z-source inverter is by carrying out minor modifications to Z-source inverter topology thus overcoming the deficiency of the latter, retain all advantages of Z-source inverter simultaneously, higher requirement can be met in grid-connected application, but the boost capability of accurate Z-source inverter is realized by the modulation of inverter usually, and what Control System Design of modulation strategy is comparatively complicated, cost is high, boost capability is limited, the limitation of therefore device voltage stress reduction.
Summary of the invention
Object of the present invention is exactly provide the boosting gain of a kind of boost capability is strong, step-up ratio is adjustable, device voltage stress is little height accurate Z-source inverter to overcome defect that above-mentioned prior art exists.
Object of the present invention can be achieved through the following technical solutions:
The accurate Z-source inverter of a kind of high boosting gain, comprises DC power supply V
in, accurate Z source boost network and three-phase inverter, it is characterized in that, described accurate Z source boost network comprises tap inductor, the first diode D
1, the first electric capacity C
1, the second electric capacity C
2with switched inductors group, described tap inductor comprises the first winding L
11with the second winding L
12, described DC power supply V
inpositive pole and the first winding L
11one end connect, the first described winding L
11the other end respectively with the second winding L
12one end, the second electric capacity C
2negative terminal connects, the second described winding L
12the other end and the first diode D
1anode connect, the first described diode D
1negative electrode respectively with the first electric capacity C
1one end of anode, switched inductors group connects, the other end of described switched inductors group respectively with the second electric capacity C
2the anode of anode, three-phase inverter connects, the first described electric capacity C
1negative terminal respectively with negative terminal, the DC power supply V of three-phase inverter
innegative pole connect; Under three-phase inverter pass-through state, the second described electric capacity C
2to tap inductor charging, the first electric capacity C
1to the charging of switched inductors group, under the non-pass-through state of three-phase inverter, described tap inductor gives the first electric capacity C
1charging, switched inductors group gives the second electric capacity C
2charging, thus improve accurate Z-source inverter boost capability, reduce the first electric capacity C
1, the second electric capacity C
2and switched inductors group voltage stress.
Described switched inductors group comprises second switch inductance L
2, the 3rd inductance L
3, the 3rd electric capacity C
3, the second diode D
2and the 3rd diode D
3, the first described electric capacity C
1anode respectively with the second diode D
2anode, second switch inductance L
2one end connect, the second described diode D
2negative electrode respectively with the 3rd electric capacity C
3anode, the 3rd inductance L
3one end connect, the 3rd described electric capacity C
3negative terminal respectively with second switch inductance L
2the other end, the 3rd diode D
3anode connect, the 3rd diode D
3negative electrode respectively with anode, the 3rd inductance L of three-phase inverter
3the other end and the second electric capacity C
2anode connect.
The first described electric capacity C
1, the second electric capacity C
2with the 3rd electric capacity C
3for polar capacitor.
The first described electric capacity C
1, the second electric capacity C
2with the 3rd electric capacity C
3capacitance equal.
Described second switch inductance L
2, the 3rd inductance L
3inductance value equal.
Described three-phase inverter is three phase inverter bridge.
Described tap inductor and three-phase inverter meet: d<1/ (2N+3), wherein the switch periods of three-phase inverter is T, and the time being in pass-through state is T
0, straight-through duty ratio is d=T
0/ T, N=N
2/ N
1for tap inductor N
2the number of turn of winding and tap inductor N
1umber of turn ratio.
Compared with prior art, the present invention has the following advantages:
(1) compared with conventional voltage source inventer, the accurate Z-source inverter of height boosting gain of the present invention adopts single stage type structure, reduces circuit volume and cost; Shoot-through zero vector can allow the conducting simultaneously of inverter bridge upper and lower bridge arm, improves circuit safety.
(2) the accurate Z-source inverter of height boosting gain of the present invention improves the accurate Z-source inverter of voltage-type, two single inductance are replaced with tap inductor and switched inductors group respectively, switched inductors can improve boost capability, and introduce the turn ratio by tap inductor, the turn ratio can be increased and improve boost capability further, thus while there is high boosting gain, reduce device voltage stress.
(3) first electric capacity C
1, the second electric capacity C
2with the 3rd electric capacity C
3adopt polar capacitor, and capacitance is equal, is convenient to theory analysis, the first electric capacity C can be made simultaneously
1with the 3rd electric capacity C
3both end voltage is equal, plays and reduces the first electric capacity C simultaneously
1, the second electric capacity C
2with the 3rd electric capacity C
3the effect of voltage stress.
(4) second switch inductance L
2, the 3rd inductance L
3inductance value equal, make second switch inductance L under pass-through state
2, the 3rd inductance L
3both end voltage and the first electric capacity C
1with the 3rd electric capacity C
3both end voltage is equal, plays and reduces second switch inductance L
2with the 3rd inductance L
3the effect of voltage stress.
Accompanying drawing explanation
Fig. 1 is the circuit structure diagram of the accurate Z-source inverter of height boosting gain of the present invention;
Fig. 2 (a) is the equivalent circuit diagram of the height boosting accurate Z-source inverter of gain of the present invention under pass-through state;
Fig. 2 (b) is the equivalent circuit diagram of the height boosting accurate Z-source inverter of gain of the present invention under non-pass-through state;
Fig. 3 (a) is the simulation result of the height boosting accurate Z-source inverter of gain of the present invention when the turn ratio is 1;
Fig. 3 (b) is the simulation result of the height boosting accurate Z-source inverter of gain of the present invention when the turn ratio is 2.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.The present embodiment is implemented premised on technical solution of the present invention, give detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
Embodiment
As shown in Figure 1, the accurate Z-source inverter of the present invention's height boosting gain comprises DC power supply V
in, high boosting gain accurate Z source boost network and three phase inverter bridge composition three-phase inverter.Described height boosting gain accurate Z source boost network is by tap inductor, switched inductors group, the first electric capacity C
1, the second electric capacity C
2and the first diode D
1composition.Described tap inductor is by N
1winding L
11and N
2winding L
12be formed by connecting, described switched inductors group is by second switch inductance L
2, the 3rd inductance L
3, the 3rd electric capacity C
3, the second diode D
2and the 3rd diode D
3composition.First electric capacity C
1, the second electric capacity C
2and the 3rd electric capacity C
3for polar capacitor, and capacitance is equal, is convenient to theory analysis, can make the first electric capacity C simultaneously
1with the 3rd electric capacity C
3both end voltage is equal, plays and reduces the first electric capacity C simultaneously
1with the 3rd electric capacity C
3the effect of voltage stress; Second switch inductance L
2, the 3rd inductance L
3inductance value equal, make second switch inductance L under pass-through state
2, the 3rd inductance L
3both end voltage and the first electric capacity C
1with the 3rd electric capacity C
3both end voltage is equal, plays and reduces second switch inductance L simultaneously
2with the 3rd inductance L
3the effect of voltage stress.
DC power supply V
inpositive pole be connected to tap inductor N
1winding L
11one end; Tap inductor N
1winding L
11the other end and tap inductor N
2winding L
12one end, the second electric capacity C
2negative terminal connect; Tap inductor N
2winding L
12the other end and the first diode D
1anode connect; First diode D
1negative electrode and the first electric capacity C
1anode, the second diode D
2anode and second switch inductance L
2one end connect; First electric capacity C
1negative terminal and DC power supply V
innegative pole, three phase inverter bridge negative terminal connect; Second diode D
2negative electrode and the 3rd electric capacity C
3anode, the 3rd inductance L
3one section of connection; 3rd electric capacity C
3negative terminal and second switch inductance L
2the other end, the 3rd diode D
3anode connect; 3rd diode D
3negative electrode and anode, the 3rd inductance L of three phase inverter bridge
3the other end and the second electric capacity C
2anode connect.
The present embodiment inverter operation principle: in a switch periods, operating state can be divided into pass-through state and non-pass-through state.If the switch periods of inverter is T, the time being in pass-through state is T
0, straight-through duty ratio is d=T
0/ T.Make C
1=C
2=C
3=C, L
2=L
3=L.
Equivalent electric circuit under pass-through state is as shown in Fig. 2 (a).Inverter bridge short circuit and DC bus-bar voltage V
ibe 0.Diode D
1disconnect, D
2, D
3conducting, DC input voitage V
inwith electric capacity C
2to tap inductor N
1winding charges, electric capacity C
1give inductance L respectively
2, L
3and electric capacity C
3charging.Then under pass-through state, can obtain:
V
in+V
C2＝V
L11(1)
V
C1＝V
C3＝V
L2＝V
L3(2)
In formula, V
infor DC input voitage; V
l11for tap inductor N
1winding voltage; V
c1, V
c2, V
c3be respectively the first electric capacity C
1, the second electric capacity C
2, the 3rd electric capacity C
3voltage; V
l2, V
l3be respectively second switch inductance L
2, the 3rd inductance L
3voltage.
Equivalent electric circuit under non-pass-through state is as shown in Fig. 2 (b).By Fig. 2 (b), inverter bridge DC side is equivalent to a current source.First diode D
1conducting, the second diode D
2, the 3rd diode D
3disconnect, DC input voitage V
inwith tap inductor N
1winding and tap inductor N
2winding gives the first electric capacity C
1charging, the 3rd electric capacity C
3, second switch inductance L
2, the 3rd inductance L
3and tap inductor N
2winding gives the second electric capacity C
2charging.Then under non-pass-through state, can obtain:
V
in+V
L11+V
L12＝V
C1(3)
V
L12＝NV
L11(4)
V
L12+V
L2+V
L3+V
C3＝V
C2(5)
V
i＝V
C1+V
C2-V
L12(6)
In formula, V
l12for tap inductor N
2winding voltage; N=N
2/ N
1for tap inductor N
2the number of turn of winding and tap inductor N
1umber of turn ratio.
By formula (3) and formula (4), tap inductor N under non-pass-through state
1winding both end voltage is:
Under non-pass-through state, by L
2=L
3, obtain V
l2=V
l3.Simultaneous formula (4), formula (5) and formula (7), inductance L under non-pass-through state
2both end voltage is:
First electric capacity C
1, the 3rd electric capacity C
3enough large and switching frequency is enough high, therefore in a switch periods, the first electric capacity C
1with the 3rd electric capacity C
3both end voltage remains unchanged.Therefore, by electric capacity C under pass-through state
1with C
3both end voltage is equal, plays and reduces the first electric capacity C simultaneously
1with the 3rd electric capacity C
3the effect of voltage stress.Can draw under non-pass-through state
V
C1＝V
C3(9)
Formula (9) is substituted into formula (8), inductance L under non-pass-through state
2both end voltage arranges:
According to voltage-second balance, in a switch periods T, tap inductor winding N
1and second switch inductance L
2two ends average voltage should be 0,
By formula (11), solve:
Simultaneous formula (6), (8), (12) and (13), obtain busbar voltage peak value
for:
In formula, step-up ratio is:
In formula, d<1/ (2N+3).Coefficient before turn ratio N is called turn ratio coefficient, and turn ratio coefficient is 2 herein.
The output phase voltage peak value of inverter should be
In formula, M is modulation factor.
From formula (15), this Z-source inverter has very strong boost capability, regulates, and can reduce device voltage stress by controlling turn ratio coefficient.
In order to verify the correctness that above-mentioned theory is analyzed, simulation study is carried out to this Z-source inverter.
Main circuit parameter: tap inductor N
1winding L
11=80 μ H, N
2winding L
12depending on turn ratio N.Electric capacity C
1=C
2=C
3=1000 μ F, inductance L
2=L
3=1mH, output inductor L
f=1mH, output filter capacitor C
f=33 μ F, load resistance R=10 Ω, switching frequency T
s=10kHz.Adopt simple boosting rectifier control.
Concrete implementation result:
Fig. 3 (a) is simulation result when this Z-source inverter N is 1, and simulation parameter is as follows: input voltage V
in=38V, tap inductor N
2winding L
12=80 μ H (N=1)/320 μ H (N=2), straight-through duty ratio d=0.1.Fig. 3 (a) median generatrix voltage peak
export phase voltage peak value
capacitance voltage V
c1=V
c3=67V, V
c2=96V.
Fig. 3 (b) is simulation result when this Z-source inverter N is 2, simulation parameter except N is replaced to 2, other parameter constants.In Fig. 3 (b)
v
c1=V
c3=111V, V
c2=185V.Data in Fig. 3 (a), Fig. 3 (b) and theoretical value basically identical.
As the above analysis, the accurate Z-source inverter major advantage of the present embodiment is: compared with conventional voltage source inventer, and the accurate Z-source inverter of the present embodiment adopts single stage type structure, reduces circuit volume and cost; Shoot-through zero vector can allow the conducting simultaneously of inverter bridge upper and lower bridge arm, improves circuit safety; Compared with traditional Z source inventer, the accurate Z-source inverter of the present embodiment utilizes switched inductors and tap inductor, wherein the first electric capacity C
1, the second electric capacity C
2with the 3rd electric capacity C
3adopt polar capacitor, and capacitance is equal, second switch inductance L
2, the 3rd inductance L
3inductance value equal, make second switch inductance L under pass-through state
2, the 3rd inductance L
3both end voltage and the first electric capacity C
1with the 3rd electric capacity C
3both end voltage is equal, substantially increases boosting stress, reduces device voltage stress simultaneously.
Claims (6)
1. the accurate Z-source inverter of high boosting gain, comprises DC power supply V
in, accurate Z source boost network and three-phase inverter, it is characterized in that, described accurate Z source boost network comprises tap inductor, the first diode D
1, the first electric capacity C
1, the second electric capacity C
2with switched inductors group, described tap inductor comprises the first winding L
11with the second winding L
12, described DC power supply V
inpositive pole and the first winding L
11one end connect, the first described winding L
11the other end respectively with the second winding L
12one end, the second electric capacity C
2negative terminal connects, the second described winding L
12the other end and the first diode D
1anode connect, the first described diode D
1negative electrode respectively with the first electric capacity C
1one end of anode, switched inductors group connects, the other end of described switched inductors group respectively with the second electric capacity C
2the anode of anode, three-phase inverter connects, the first described electric capacity C
1negative terminal respectively with negative terminal, the DC power supply V of three-phase inverter
innegative pole connect; Under three-phase inverter pass-through state, the second described electric capacity C
2to tap inductor charging, the first electric capacity C
1to the charging of switched inductors group, under the non-pass-through state of three-phase inverter, described tap inductor gives the first electric capacity C
1charging, switched inductors group gives the second electric capacity C
2charging.
2. the accurate Z-source inverter of a kind of high boosting gain according to claim 1, it is characterized in that, described switched inductors group comprises second switch inductance L
2, the 3rd inductance L
3, the 3rd electric capacity C
3, the second diode D
2and the 3rd diode D
3, the first described electric capacity C
1anode respectively with the second diode D
2anode, second switch inductance L
2one end connect, the second described diode D
2negative electrode respectively with the 3rd electric capacity C
3anode, the 3rd inductance L
3one end connect, the 3rd described electric capacity C
3negative terminal respectively with second switch inductance L
2the other end, the 3rd diode D
3anode connect, the 3rd diode D
3negative electrode respectively with anode, the 3rd inductance L of three-phase inverter
3the other end and the second electric capacity C
2anode connect.
3. the accurate Z-source inverter of a kind of high boosting gain according to claim 2, is characterized in that, the first described electric capacity C
1, the second electric capacity C
2with the 3rd electric capacity C
3for polar capacitor.
4. the accurate Z-source inverter of a kind of high boosting gain according to claim 2, is characterized in that, the first described electric capacity C
1, the second electric capacity C
2with the 3rd electric capacity C
3capacitance equal.
5. the accurate Z-source inverter of a kind of high boosting gain according to claim 2, is characterized in that, described second switch inductance L
2, the 3rd inductance L
3inductance value equal.
6. the accurate Z-source inverter of a kind of high boosting gain according to claim 1, it is characterized in that, described three-phase inverter is three phase inverter bridge.
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|---|---|---|---|
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|---|---|---|---|
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Cited By (9)
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|---|---|---|---|---|
| CN105529923A (en) * | 2015-12-31 | 2016-04-27 | 华南理工大学 | Novel Trans-Z source boost converter |
| CN105529921A (en) * | 2015-12-31 | 2016-04-27 | 华南理工大学 | Quasi Z source converter employing transformer and switched inductor |
| CN105529919A (en) * | 2015-12-31 | 2016-04-27 | 华南理工大学 | Quasi Z source converter employing transformer |
| CN105529920A (en) * | 2015-12-31 | 2016-04-27 | 华南理工大学 | Hybrid quasi Z source converter employing transformer |
| CN105529922A (en) * | 2015-12-31 | 2016-04-27 | 华南理工大学 | Trans-Z source converter employing switched inductor |
| CN105553257A (en) * | 2015-12-31 | 2016-05-04 | 华南理工大学 | Quasi Z source converter employing transformer and voltage lift technique |
| CN107612395A (en) * | 2017-09-26 | 2018-01-19 | 上海电力学院 | A kind of new double quasi- Z sources five-electrical level inverter |
| CN109525137A (en) * | 2018-12-30 | 2019-03-26 | 盐城工学院 | A kind of DC communication translation circuit |
| CN109617397A (en) * | 2018-12-30 | 2019-04-12 | 盐城工学院 | A kind of DC communication electric power conversion apparatus |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105529923A (en) * | 2015-12-31 | 2016-04-27 | 华南理工大学 | Novel Trans-Z source boost converter |
| CN105529921A (en) * | 2015-12-31 | 2016-04-27 | 华南理工大学 | Quasi Z source converter employing transformer and switched inductor |
| CN105529919A (en) * | 2015-12-31 | 2016-04-27 | 华南理工大学 | Quasi Z source converter employing transformer |
| CN105529920A (en) * | 2015-12-31 | 2016-04-27 | 华南理工大学 | Hybrid quasi Z source converter employing transformer |
| CN105529922A (en) * | 2015-12-31 | 2016-04-27 | 华南理工大学 | Trans-Z source converter employing switched inductor |
| CN105553257A (en) * | 2015-12-31 | 2016-05-04 | 华南理工大学 | Quasi Z source converter employing transformer and voltage lift technique |
| CN107612395A (en) * | 2017-09-26 | 2018-01-19 | 上海电力学院 | A kind of new double quasi- Z sources five-electrical level inverter |
| CN109525137A (en) * | 2018-12-30 | 2019-03-26 | 盐城工学院 | A kind of DC communication translation circuit |
| CN109617397A (en) * | 2018-12-30 | 2019-04-12 | 盐城工学院 | A kind of DC communication electric power conversion apparatus |
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