CN1050454C - Detecting and analysing method and apparatus for reliability of semiconductor laser - Google Patents
Detecting and analysing method and apparatus for reliability of semiconductor laser Download PDFInfo
- Publication number
- CN1050454C CN1050454C CN 95107991 CN95107991A CN1050454C CN 1050454 C CN1050454 C CN 1050454C CN 95107991 CN95107991 CN 95107991 CN 95107991 A CN95107991 A CN 95107991A CN 1050454 C CN1050454 C CN 1050454C
- Authority
- CN
- China
- Prior art keywords
- current
- voltage
- semiconductor laser
- detected device
- reliability
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The present invention relates to a method and a device for the parameter testing and the reliability analysis of semiconductor lasers. The device is mainly composed of a microcomputer (1), a sample box (3), a data collection plate (4), a current-voltage conversion circuit (7), a photoelectric detector (30), a voltage-current steering circuit (10), a signal source (11), a phase-lock amplifier (8), etc. The tested parameters are used for carrying out reliability analysis to a device by testing the electrical derivative curve, the thermal resistance, the power, the variable temperature curve, etc. of the device (29). The present invention has the characteristic of computerization, automation, even heating, testing of a plurality of devices for one time, etc. The device can be tested and analyzed quickly and simply without damaging the reliability of the device.
Description
The invention belongs to a kind of method for testing and analyzing and device, particularly the method and apparatus of semiconductor laser parameter test, fail-safe analysis.
Existing reliability of semiconductor laser (life-span) detection method adopts electric aging process.Threshold current by measuring detected device, power output etc. by improving temperature, strengthen the quick aging method of electric current, are fallen the big device screening of optical power change rate under the electric current necessarily.Concrete steps are that detected device is positioned on the agingtable, are under 80 ℃, electric current 150mA condition aging 72 hours in temperature, measure the variation before and after aging of luminous power certain electric current under or threshold current, think rate of change big be unreliable device.This check and analysis method, spended time is long, can not detect in real time, and agingtable will have enough capacity (making very greatly), and this not only will have very high cost, expend very big electric energy, and production efficiency is low; This check and analysis method is vulnerable to thermoelectric the impact because detected device energising warm-up time is long, makes device damage or decreases ring; This check and analysis method is because condition is identical, and load is different concerning different components under stabling current or firm power, if any device not luminous substantially under this current condition, the but generation that has swashs penetrates.That is, the device that has has been harsh to this condition, and the device that has seems again, and condition is too wide, thereby or do not reach the purpose of screening, influence the quality of product, perhaps condition is too harsh, and device is obviously reduced useful life.
With this bright device that is close most be " laser diode integrated test system ".Constitute by DC power supply, microcomputer, data acquisition board, integrating sphere luminous power detection system, temperature control system, Digital PID Controller, double monochromator, far-field measurement system, measuring head and ancillary equipment mainly that current source card control 0～2A DC power supply adds continuous adjustable direct current to laser in the controller, the analogue measurement card also is contained in the controller slot, come the various parameters of Laser Measurement device, the temperature control card sends instruction by computer and removes to drive the TE drive plate, heat or desuperheat to laser, finally reach the temperature that controller is set.This cover test macro can be measured the threshold current I of semiconductor laser
Th, forward junction voltage Vs, the relation curve P-I curve of luminous power and drive current, parameter or parameters such as differential luminous power dP/dI and far-field intensity distribution, spectral response, but have characteristics such as alternating temperature, easy to operate, precision height.But this test macro can only provide the parameter of some devices, can not make evaluation to the q﹠r of device; But also knot characteristic parameter m that can not measuring element, b parameter, height h and thermal resistance R sink
TAnd the rate of temperature change of these parameters.The prior art data can be published referring to " HT9401 automatic laser device test macro specification " (HT-9401Automatic LD Test System Instruction Manual) Beijing HITECH photoelectricity company, Institute of Semiconductors,Academia Sinica.
The present invention utilizes the device of complete micro-processor controlled semiconductor laser parameter test and reliability check and analysis, by test to electric derivative curve, thermal resistance etc., obtain characteristic parameter or parameter, through the quality of analysis-by-synthesis differentiation device, reach easy, harmless, apace a plurality of devices carried out the purpose that reliability detects.
Reliability of semiconductor laser check and analysis method of the present invention mainly is by the test to the electric derivative curve of detected device and alternating temperature electricity derivative curve, the Partial Feature parameter that obtains device varies with temperature rate, these data that obtain are compared with normal parameter, and the noise spectra of semiconductor lasers q﹠r is estimated.
Concrete step is described below:
The first, measure the electric derivative curve of detected semiconductor laser, i.e. Idv/dI～I, curve.Wherein I is the drive current of detected device, and V is the junction voltage of detected device.General IdV/dI～the I curve shape as shown in Figure 1.
The second, from electric derivative curve, obtain threshold current I
Th, to threshold current I
ThTwo sections curves of front and back carry out fitting a straight line, obtain two slopes and intercept, and the intercept of threshold value forward part is mkT/q, and slope is R
S1, threshold value rear section intercept is b, slope R
S2, m wherein is the knot characteristic parameter, and k is a Boltzmann constant, and T is a probe temperature, and q is an electron charge, b is the b parameter, R
S1, R
S2Be the series resistance before and after the threshold value.By threshold current I
ThThe maximum and the minimizing difference of near curve record threshold current I
ThThe full degree of closing of the junction voltage at place, height h (mV) promptly sinks.
The 3rd, change probe temperature T, record Δ b/ Δ T by the electric derivative curve before and after the alternating temperature, promptly the b parameter is with the rate of change of temperature T.Can also record threshold current I
ThRate of change Δ I with temperature T
Th/ Δ T, and extrapolate characteristic temperature T
0
The 4th, each parameter of gained is compared with the normal value (normal parameter value) of these parameters of the semiconductor laser of this structure, q﹠r to detected device is made evaluation, the rule of estimating is: the height h value of sinking is not less than the normal parameter value, b parameter, knot characteristic parameter m, series resistance R
s, the b parameter is not more than the normal parameter value with variation of temperature rate Δ b/ Δ T is the device of good reliability.
The 5th, said normal parameter value is to detected a collection of device sampling, selects qualified samples with conventional reliability detection and aging method and obtains after tested.
The electricity derivative curve is at threshold current I
ThThe place occurs, and due to be that junction voltage is full closed, to device of the same race, the h value difference is different to be that factors such as material parameter in the device preparation process, structural parameters difference and technology dispersiveness cause the device that the h value is less than normal, often poor reliability.Knot characteristic parameter m is subjected to contact nonlinear, heterojunction boundary situation: non-radiative compound, and the influence of factors such as electric leakage, to a semiconductor laser, the size of m value is the sign of quality of materials and technological level.Therefore, in general the device m value of good reliability is less.Series resistance Rs generally represents the contact quality of device, R
sBigger than normal may be higher etc. relevant with dimension of picture or pressure welding quality or cap layer resistivity.The b parameter value is big, and electric derivative curve is at threshold current I
ThThe rear section is bent downwardly, normally because there is one and to tie the non-linear channels that is in parallel etc. relevant in device.The big device of Δ b/ Δ T is unreliable device certainly so the b parameter value is big.
The method of test among the present invention electricity derivative curve I dV/dI～I be by one of microcomputer software control digital to analog converter output with to be added in the corresponding voltage of the electric current that drives on the detected device, obtaining time dependent drive current I through the voltage-to-current conversion is added on the detected device, with a sinusoidal signal drive current I is modulated simultaneously, the frequency of sinusoidal signal can be 10KHz, detect its fundamental component through lock-in amplifier and get dV/dI, send into microcomputer through analog to digital converter again, software is finished the product with I, and screen provides I dv/dI～I curve and calculates each parameter.
Because thermal resistance R
TBe the parameter that shows the semiconductor laser heat dispersion, thermal resistance R
TSize relevant with the thermal conductivity and the geometry of material.Thermal resistance R
TBeing the key factor that causes knot to heat up, is the main cause that causes the device parameters deterioration, thermal resistance R
TBig device can not at room temperature be done continuously mutually.Therefore, thermal resistance R
TIt also is one of foundation of judging reliability of semiconductor laser.
Of the present invention to thermal resistance R
TTest adopt the forward voltage drop method, concrete test process comprises: when temperature is T, detected device is added a measuring current that duty ratio is minimum, record the forward junction pressure drop V under this electric current
LA broad pulse heating current I again superposes
T, record the forward junction voltage V under the measuring current after the heat balance
HWith heating current I
TUnder knot pressure drop V, must heat electrical power P
T=I
TV δ, wherein δ is heating current I
TDuty ratio; In another temperature T ' time under measuring current, record forward junction voltage V '
L, then obtain the temperature coefficient K=(V of the forward voltage drop of device
L-V '
L)/(T-T '); Get thermal resistance R at last
T=(V
L-V
H)/KP
T
The present invention adopts the large tracts of land Ge detector to make luminous power to detect to luminous power curve (P-I curve) and the luminous power differential dP/dI to drive current, by analog to digital converter light intensity magnitude is sent into microcomputer with digital form and records.
With reliability of semiconductor laser check and analysis method of the present invention PBC structure In Ga/AsP/InP laser is carried out check and analysis, each parameter value of the device of good reliability is Rs＜10 Ω, m＜3.5, b＜10mV, Δ b/ Δ T＜0.4mV/K, h＞50mV, R
T＜50 Ω.
Invented test function and the device of device reliability check and analysis function---the reliability of semiconductor laser check and analysis instrument that has the multiple parameter of test component concurrently according to reliability of semiconductor laser check and analysis method of the present invention.Device of the present invention with existing " laser diode integrated test system " relatively except that identical function, can be tested and draws the electric derivative curve of device; Can one by one test each parameter fast to a plurality of detected devices; Can record the unavailable b parameter of other instruments, the height h that sinks, knot characteristic parameter m and with variation of temperature etc.; Can provide the result of determination of device quality and reliability.
To express method and apparatus of the present invention in order knowing, to provide five width of cloth accompanying drawings:
Fig. 1 is the electric derivative curve and the partial parameters of semiconductor laser.
Fig. 2 is a device complete machine structure block diagram of the present invention.
Fig. 3 is that the sales kit (SK) structure of device of the present invention is partly cutd open figure.
Fig. 4 is the channel conversion circuit figure of device of the present invention.
Fig. 5 is the polar switching socket plug schematic diagram of device of the present invention.
The structure of reliability of semiconductor laser check and analysis instrument of the present invention mainly includes microcomputer 1, main frame 2,3 three parts of sales kit (SK).Wherein in the main frame 2 data acquisition board 4 is arranged, voltage-current conversion circuit 7 and single-chip microcomputer temperature-controlling system 9; Specimen holder, electric current-voltage conversion circuit 10, photodetector 30, incubator 22, temperature sensor, calandria 23 etc. are arranged in the sales kit (SK) 3.Said data acquisition board 4 includes digital to analog converter 5 and analog to digital converter 6, be inserted on microcomputer 1 expansion slot, digital to analog converter 5 is electrically connected with voltage-current conversion circuit 7, by microcomputer 1 software control, the drive current I of linear change is added on the detected device 29 to make the voltage signal of digital to analog converter 5 output become in time through voltage-current conversion circuit 7; Said photoconductive detector 30 is converted into the photoelectric current of detected device 29 outputs voltage signal through electric current-voltage conversion circuit 10 and is defeated by analog to digital converter 6, finishes the test to P～I curve and dP/dI～I curve; The junction voltage signal that detected device 29 provides is defeated by analog to digital converter 6, finishes thermal resistance R
TAnd the measurement of volt-ampere characteristic (V～I curve); The invention is characterized in, lock-in amplifier 8 and signal source 11 also are housed in main frame 2, the input of lock-in amplifier 8 is connected with signal source 11 and detected device 29 electricity, and output is connected with analog to digital converter 6 electricity; The sinusoidal signal of signal source 11 outputs is defeated by the drive current I of detected device 29 with the current constant mode modulation by voltage-to-current translation circuit 7, detect fundamental component dV/dI through lock-in amplifier 8, send into microcomputer 1 through analog to digital converter 6, finish the product of dV/dI and I, obtain electric derivative curve by software.
The concrete structure of sales kit (SK) 3 of the present invention can be referring to Fig. 3.Cabinet 21 is divided into movable the first half 31 and fixing the latter half 34.Can open loam cake easily like this, place detected device 29.The incubator of making of heat-insulating material 22 is housed in cabinet 21, and specimen holder, calandria 23 etc. places in the incubator 22.The invention is characterized in, place heating rod 24 in the middle of calandria 23, constitute the internal heat type structure, realization heat is transmitted fast, and detected device 29 is heated evenly; Said specimen holder includes sample holder 26, dovetail groove anchor clamps 27, heat sink anchor clamps 28.Sample holder 26 be fixed on calandria 23 above, such as fixing with screw 25, at a sample holder 26 plural dovetail groove anchor clamps 27 can be housed side by side, each dovetail groove anchor clamps 27 usefulness counter-sunk screw 37 is fixing with sample holder 26, screw 36 is electric insulation screws, guarantees that each dovetail groove anchor clamps 27 is with sample holder 26 electric insulations.Detected device 29 is placed on heat sink anchor clamps 28 tops, and heat sink anchor clamps 28 usefulness screws connect with the first half (cross section is the part of swallowtail shape) of dovetail groove anchor clamps 27.Because the dovetail groove anchor clamps 27 that used dovetail to work in coordination with dovetail groove are changed detected device 29 easily.Because with sample holder 26 electric insulations, making, dovetail groove anchor clamps 27 also are electrically insulated from one another between the plural detected device 29.The light-emitting window of each detected device 29 all follows the light center position that is subjected to of a photodetector 30 to align, photodetector 30 is installed on the rear board of incubator 22, and can change according to the long and short wavelength of detected device 29, plural detected device 29 realizes continuous detecting one by one by a channel converter, said channel converter adopts analog switch and designs with the mode of triode extend current.The electrode of each detected device 29 is by multiply flat electrode lead-in wire 32, and connection provides drive current I for detected device 29 with the channel converter current output terminal.Among Fig. 3 38 is the contact conductor printed circuit board (PCB), and 39 is heat insulation backing plate, and 40 is the installing hole of temperature sensor.
Single-chip microcomputer temperature-controlling system 9 of the present invention can be selected integrated temperature sensor for use, be loaded in the installing hole 40 on the calandria 23 such as AD590, can adopt double integrator pattern number converter, such as MC14433, temperature value is converted into digital quantity sends into single-chip microcomputer, through single-chip microcomputer output control signal, again through photoelectrical coupler, as 4N28, isolate back control bidirectional triode thyristor, give heating rod 24 power supplies with alternating current; Said single-chip microcomputer can adopt the MCS-8751 singlechip chip, by Rs232 serial communication interface and microcomputer 1 exchange message.Single-chip microcomputer temperature-controlling system 9 can also add the zero-crossing pulse circuit and single-chip microcomputer joins, and the break-make of heating rod 24 electric currents is all finished when zero-crossing of alternating current, avoids the influence of temperature-controlling system to test.
The physical circuit of passage conversion can be referring to Fig. 4.Q wherein is middle power NPN triode, requires penetrating current little, resistance R
1For preventing that the analog switch overload is provided with resistance R
2For the leakage current of avoiding analog switch misleads Q I is set
InAnd I
OutBe the input and output electric current of drive current I concerning switch.Analog switch can adopt 16 to select 1 K switch, because 16 conducting resistance and the Power Limitation of selecting 1 analog switch K do not allow directly to pass through big electric current, and drive current are bigger, so taked the mode of triode extend current.As analog switch K gating X
1The time, input current I
InThrough R
1With analog switch K be NPN triode Q
1Bias current is provided, makes Q
1Conducting, I as can be seen from circuit
Out=I
InAs analog switch k gating X not
1The time, Q
1End output current I
Out=0.So just finished the passage conversion of big electric current.Control to analog switch can be served as by the single-chip microcomputer of single-chip microcomputer temperature-controlling system 9 by control line L.
The electrical schematic diagram of reversal can be referring to Fig. 5.A among Fig. 5, B are two groups of reversal sockets 33, and their ground lead position is just the opposite, promptly are right side lead-in wire ground connection in each adjacent two lead-in wire of A group, and are left side lead-in wire ground connection in each adjacent two lead-in wire of B group; C is the contact conductor plug, electrically connects by multiply flat electrode lead-in wire 32 with detected device 29, and every two adjacent lead-in wires are connected a detected device 29.As shown in Figure 5, when contact conductor plug C inserts reversal socket 33A, the left end electrode grounding of each detected device 29, right-hand member electrode grounding then when inserting reversal socket 33B, thus realized the reversal of detected device 29 easily.Reversal socket 33 is connected with the channel converter current output terminal and is provided drive current I for detected device 29.
Reliability of semiconductor laser determination method of the present invention and device have following features: 1. be half-and-half The conductor laser reliability detects the completely new approach of analyzing, and device screening is had harmless, quick, easy spy Point, and can analyze the factor that affects device reliability. Device of the present invention have Microcomputer, intellectuality, The automation characteristics not only detect to be analyzed for reliability data are provided, and can test that existing apparatus can not finish Electricity derivative curve and some device parameters. 2. can be to more than two, namely the detected device of batch passes through multichannel Change-over circuit is once finished test job one by one; Can pass through the polarity conversion socket, finish by detector easily The electrode conversion of part. 3. can carry out temperature variation testing, it is fast equal to detected device that the single-chip microcomputer temperature-controlling system can reach Even heating can be avoided the interference to test process and result, the reliability height; The control of Chip Microprocessor Temperature is by the master The input of switch dish is finished by software, has saved single-chip microcomputer and has established in addition keyboard and display screen. 4. survey with the forward junction pressure decline method Thermal resistance is than additive method is flexible, convenient, speed is fast, accuracy rate is high. 5. hardware is few in electric derivative curve test, Cost is low, can by microcomputer software to the lock-in amplifier calibration once, remedy the analogue measurement system before every measurement Drift, can realize real-time testing, each Measuring Time was less than two minutes, start does not need preheating. 6. dovetail groove presss from both sides The use of tool can conveniently be detected the replacing of device, is conducive to measure batch. 7. overall structure letter of the present invention Single, function is more complete, dependable performance, convenient operation. Namely can test component, again can test dies, can be used for giving birth to Produce, by the test to device parameters, instruct and produce and device is screened. Just finish the electrode conversion of detected device. 3. can carry out temperature variation testing, single-chip microcomputer temperature control System can reach detected device Quick uniform is heated, and can avoid test process and result Interference, the reliability height; The control of Chip Microprocessor Temperature is by the host keyboard input, by soft Part is finished, and has saved single-chip microcomputer and has established in addition keyboard and display screen. 4. use forward junction pressure decline method calorimetric Resistance is than additive method is flexible, convenient, speed is fast, accuracy rate is high. 5. at electric derivative curve Hardware is few in the test, and cost is low, can be by microcomputer software to lock-in amplifier before every measurement Calibration once remedies the drift of analogue measurement system, can realize real-time testing, the each measurement Time, start did not need preheating less than two minutes. 6. the use of dovetail groove anchor clamps can make things convenient for quilt The replacing of detection means is conducive to measure batch. 7. overall structure of the present invention is simple, merit Can be more complete, dependable performance, convenient operation. Namely can test component, again can test dies, Can be used for producing, by the test to device parameters, instruct and produce and device is screened.
Claims (7)
1, a kind of reliability of semiconductor laser check and analysis method is used for the semiconductor laser with a kind of structure is carried out parameter testing and fail-safe analysis, and this method comprises the steps:
1. measure the electric derivative curve of detected semiconductor laser, i.e. IdV/dI～I curve, wherein I is the drive current of semiconductor laser, dV/dI is the differential of junction voltage to drive current;
2. from electric derivative curve, obtain threshold current I
Th, to threshold current I
ThFront and back two parts curve carries out fitting a straight line, obtains two slopes and intercept, and the intercept of threshold value forward part is mKT/q, and slope is R
S1, the intercept of threshold value rear section is b, slope is R
S2, wherein, m is the knot characteristic parameter, and k is a Boltzmann constant, and T is a probe temperature, and q is an electron charge, b is the b parameter, R
S1, R
S2, be the series resistance before and after the threshold value; By threshold current I
ThThe maximum and the minimizing difference of near curve record the full degree of closing of junction voltage at threshold current place, and height h promptly sinks;
3. change probe temperature T,, record Δ b/ Δ T and reach/Δ I by the electric derivative curve before and after the alternating temperature
Th/ Δ T;
4. each parameter of gained is compared with the normal value of these parameters of the semiconductor laser of this structure, the q﹠r of detected semiconductor laser is made evaluation; Estimating rule is that the h value is not less than the normal parameter value, and b, m, Δ b/ Δ T, Rs are not more than the device that the normal parameter value is a good reliability;
5. said normal parameter value is to detected a collection of device sampling, selects qualified samples with conventional reliability detection and aging method and obtains after tested.
2, according to the described reliability of semiconductor laser check and analysis of claim 1 method, the parameter that it is characterized in that being used to carrying out the reliability check and analysis also includes thermal resistance R
T, luminous power P and drive current relation curve are P-I curve, the luminous power differential dP/dI to drive current; Said thermal resistance R
TMeasure by the forward voltage drop method, promptly detected device is added the less measuring current of duty ratio and measure forward junction voltage V under this electric current
L, a broad pulse heating current I again superposes
T, record forward junction voltage V under the measuring current after the heat balance
HWith heating current I
TUnder tie pressure drop V, can heat electrical power P
T, survey the forward junction voltage V ' under the measuring current under another temperature again
L, can get the temperature coefficient K=(V of the forward voltage drop of device
L-V '
LTemperature difference when)/Δ T, Δ T are twice measurement forward junction voltage gets thermal resistance R at last
T=(V
L-V
H)/kPT; Said luminous power curve and luminous power are to adopt the large tracts of land Ge detector to make luminous power to detect to the differential of drive current, will send into microcomputer with digital form by the analog to digital converter light intensity magnitude and record.
3, according to claim 1 or 2 described reliability of semiconductor laser check and analysis methods, it is characterized in that, said electric derivative curve test is by one of microcomputer software control digital to analog converter output and the corresponding voltage of drive current I that will be added on the detected device, obtaining time dependent drive current I through voltage-current transformation is added on the detected device, with a sinusoidal signal drive current is modulated simultaneously, detect its fundamental component through lock-in amplifier and obtain dV/dI, send into microcomputer through analog to digital converter, software is finished the product with I, and screen is painted IdV/dI～I curve and calculated each parameter.
4, according to claim 1 or 2 described reliability of semiconductor laser check and analysis methods, it is characterized in that, the PBC structure I
nThe Ga/AsP/InP laser, Rs＜10 Ω, m＜3.5, b＜10mV, Δ b/ Δ T＜0.4mV/K, h＞50mV, R
T＜50 Ω are reliable devices.
5, a kind of reliability of semiconductor laser check and analysis instrument, this analyzer is made up of microcomputer (1), main frame (2), sales kit (SK) (3),
Described main frame (2) is made of data acquisition board (4), voltage-current conversion circuit (7), single-chip microcomputer temperature-controlling system (9) and lock-in amplifier (8), signal source (11);
Data acquisition board wherein (4) contains digital to analog converter (5) and analog to digital converter (6), is inserted on microcomputer (1) accessory slot; Digital to analog converter (5) is electrically connected with voltage-current conversion circuit (7), by microcomputer (1) software control, the drive current of linear change is added on the detected device (29) to make the voltage signal of digital to analog converter (5) output become in time through voltage one current conversion circuit (7); The input of lock-in amplifier (8) is electrically connected with signal source (11) and detected device (29), output is electrically connected with analog to digital converter (6), and the sinusoidal signal of signal source (11) output is defeated by the drive current of detected device (29) by voltage-current conversion circuit (7) with the current constant mode modulation;
Specimen holder, electric current-voltage conversion circuit (10), photodetector (30), incubator (22) and temperature sensor, calandria (23) are housed in the described sales kit (SK) (3); Specimen holder places in the incubator (22);
Photodetector wherein (30) turns to the photoelectric current of detected device (29) output voltage signal through electric current-voltage conversion circuit (10) and is defeated by analog to digital converter (6); The junction voltage signal of detected device (29) output is defeated by analog to digital converter (6);
Said specimen holder includes sample holder (26) dovetail groove anchor clamps (27) and heat sink anchor clamps (28), sample holder (26) is fixed on above the calandria (23), plural dovetail groove anchor clamps (27) electric insulation ground is fixing with sample holder (26), heat sink anchor clamps (28) are gone up and are placed detected device (29), and heat sink anchor clamps (28) connect with the first half of dovetail groove anchor clamps (27); Said photodetector (30) has more than two, is installed on the rear board of incubator (22), is subjected to the position of light center to follow the light-emitting window of detected device (29) to align; The electrode of detected device (29) is connected with the channel converter current output terminal by multiply flat electrode lead-in wire (32) and is provided drive current for detected device (29), and realizes continuous detecting one by one.
6,, it is characterized in that said single-chip microcomputer temperature-controlling system (9) is to be loaded in the installing hole (40) on the calandria (23) with integrated temperature sensor according to the described reliability of semiconductor laser check and analysis of claim 5 instrument; With double integrator pattern number converter temperature value is transferred to digital quantity and send into single-chip microcomputer, through single-chip microcomputer output control signal; By controlling bidirectional triode thyristor after the photoelectric coupler isolation, give heating rod (24) power supply again with alternating current; Single-chip microcomputer is followed microcomputer (1) exchange message by the Rs232 serial communication interface; Single-chip microcomputer in the said single-chip microcomputer temperature-controlling system (9) is the MCS8175 singlechip chip, and by control line (L) analog switch (K) of channel converter is controlled.
7, according to claim 5 or 6 described reliability of semiconductor laser check and analysis instrument, the electrode that it is characterized in that each detected device (29) electrically connects with reversal plug (C) by multiply flat electrode lead-in wire (32), and every two adjacent lead-in wires connect a detected device (29); Reversal socket (33) have two groups (A, B), their ground lead position is just the opposite, i.e. lead-in wire ground connection in right side in each two adjacent lead-in wire of A group, then left side lead-in wire ground connection in each two adjacent lead-in wire of B group; Reversal socket (33) is connected with the channel converter current output terminal and is provided drive current I for detected device (29).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95107991 CN1050454C (en) | 1995-08-11 | 1995-08-11 | Detecting and analysing method and apparatus for reliability of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95107991 CN1050454C (en) | 1995-08-11 | 1995-08-11 | Detecting and analysing method and apparatus for reliability of semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1117136A CN1117136A (en) | 1996-02-21 |
| CN1050454C true CN1050454C (en) | 2000-03-15 |
Family
ID=5076570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 95107991 Expired - Fee Related CN1050454C (en) | 1995-08-11 | 1995-08-11 | Detecting and analysing method and apparatus for reliability of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1050454C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1299408C (en) * | 2004-09-09 | 2007-02-07 | 长春理工大学 | Filling liquid heat conductive medium temperature control device for semiconductor laser parameter test |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100386611C (en) * | 2004-03-02 | 2008-05-07 | 华为技术有限公司 | Apparatus and method for detecting invalidation and aging of laser device |
| CN101114002B (en) * | 2007-09-07 | 2010-08-04 | 中国科学院长春光学精密机械与物理研究所 | Aging and selecting circuit applied to photoelectric collection tube in photoelectric shaft-position encoder |
| CN101672889B (en) * | 2009-08-19 | 2013-01-02 | 哈尔滨工业大学 | Device and method for detecting characteristics of pulse type semiconductor laser |
| CN102125913B (en) * | 2011-01-28 | 2013-01-02 | 成都优博创技术有限公司 | System and method for screening transmission performances of semiconductor laser |
| CN102288888B (en) * | 2011-06-12 | 2013-04-10 | 华北电力大学（保定） | Device and method for monitoring performance of semiconductor laser device of electric pump |
| CN102353517B (en) * | 2011-06-30 | 2013-08-14 | 成都优博创技术有限公司 | Temperature grading and screening platform and method for semiconductor lasers |
| CN102306904A (en) * | 2011-08-04 | 2012-01-04 | 南昌航空大学 | High-precision semiconductor laser system based on feedforward decoupling control |
| CN102520329A (en) * | 2011-11-30 | 2012-06-27 | 江苏飞格光电有限公司 | Reliability test method of semiconductor laser |
| CN102882123A (en) * | 2012-08-30 | 2013-01-16 | 中国科学院长春光学精密机械与物理研究所 | Multi-output aging power supply for pulse lasers |
| CN103235173B (en) * | 2013-04-24 | 2016-02-24 | 成都优博创技术有限公司 | A kind of method of testing of laser threshold current and driving sampling apparatus |
| CN103412170A (en) * | 2013-07-09 | 2013-11-27 | 成都华正元科技有限公司 | Laser threshold current testing method and device thereof |
| CN103576068A (en) * | 2013-11-05 | 2014-02-12 | 吉林大学 | General electric derivative tester for semiconductor laser |
| CN104833446B (en) * | 2015-05-08 | 2017-07-04 | 福州大学 | A kind of CMOS TEMPs chip test system |
| DE102015115140B4 (en) | 2015-09-09 | 2023-12-21 | Infineon Technologies Ag | Power converter arrangement with improved fastening |
| CN105717170A (en) * | 2016-02-18 | 2016-06-29 | 工业和信息化部电子第五研究所 | Laser-induced impedance change test method and system |
| CN106324469A (en) * | 2016-09-30 | 2017-01-11 | 深圳新飞通光电子技术有限公司 | Multiplex PIV (peak inverse voltage) testing system suitable for optical transmitter module and testing method of multiplex PIV testing system |
| CN110749782B (en) * | 2018-07-23 | 2021-07-02 | 潍坊华光光电子有限公司 | Pulse drive test method for semiconductor laser |
| CN109029930A (en) * | 2018-07-26 | 2018-12-18 | 昆山丘钛微电子科技有限公司 | A kind of plummer and camera lens temperature drift test device |
| CN109212399B (en) * | 2018-08-10 | 2021-01-01 | 全球能源互联网研究院有限公司 | Device and method for testing high-temperature electrical characteristics of semiconductor device |
| CN109490744A (en) * | 2018-12-14 | 2019-03-19 | 北京航空航天大学 | A kind of PN junction device impurity concentration/concentration gradient automatic measurement system and method |
| CN111366884B (en) * | 2018-12-26 | 2023-05-16 | 西安西电高压开关有限责任公司 | Active electronic current transformer and laser life evaluation method and device thereof |
| CN109798937A (en) * | 2019-02-18 | 2019-05-24 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Low-power semiconductor laser reliability Auto-Test System |
| CN110736909B (en) * | 2019-10-18 | 2022-09-20 | 北京华峰测控技术股份有限公司 | Semiconductor device package inspection method, computer device, and readable storage medium |
| CN116243133B (en) * | 2023-05-11 | 2023-08-01 | 中国科学院长春光学精密机械与物理研究所 | Nondestructive prediction system and method for radiation damage resistance of semiconductor laser |
-
1995
- 1995-08-11 CN CN 95107991 patent/CN1050454C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1299408C (en) * | 2004-09-09 | 2007-02-07 | 长春理工大学 | Filling liquid heat conductive medium temperature control device for semiconductor laser parameter test |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1117136A (en) | 1996-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1050454C (en) | Detecting and analysing method and apparatus for reliability of semiconductor laser | |
| CN101183136A (en) | High power semiconductor laser device reliability detection method | |
| KR101209082B1 (en) | Real time aging test equipment for LED device | |
| CN109164136A (en) | Thermoelectricity transports parameter high pass system for measuring quantity and method | |
| CN103713253A (en) | System and method for online detection of illumination, chrominance and junction temperature decay characteristics of LED | |
| CN1186865C (en) | Aging and screening equipment and method of semiconductor laser | |
| CN109738777A (en) | A kind of bipolar transistor device thermal resistance constitutes measuring device and method | |
| CN111257721A (en) | Photoinduced current transient spectrum automatic analysis method and system | |
| CN102017116B (en) | Device characterisation utilising spatially resolved luminescence imaging | |
| CN109282897B (en) | Automatic spectrum optical power detection equipment | |
| CN205353177U (en) | Transient state photovoltage test system that lightning was independently maked | |
| CN103278781B (en) | Electric characteristic analyzer for a pulse xenon lamp | |
| Bellone et al. | An analog circuit for accurate OCVD measurements | |
| CN108303628A (en) | A method of carrying out junction temperature test using square-wave signal driving semiconductor devices | |
| CN1271544C (en) | Method for semiconductor material specific property characterization and its system | |
| CN114112314A (en) | Detection performance test method for multifunctional photoelectric detection system | |
| CN115792347B (en) | Alternating current measuring and calculating method based on microwave frequency shift | |
| US5302883A (en) | Automated apparatus and method for the reproduction of same color temperature luminous intensity standard light source | |
| Karnobatev | Develop Test and Implementation of Low Cost DC Power Data Logger | |
| CN216900318U (en) | Thermal diffusion coefficient measuring device | |
| CN217787242U (en) | Integrated system for measuring superconductor alternating current loss | |
| CN1358986A (en) | Characterization system for property measurement of intermediate infrared waveband semiconductor laser | |
| CN112858401B (en) | Thermal resistance testing device and method for detecting brazing defects of heterogeneous workpieces | |
| CN103576068A (en) | General electric derivative tester for semiconductor laser | |
| CN115291071B (en) | LED array photo-thermal integrated detection device and method based on lock-in amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |