CN105006520B - Tunnelling pressure sensor - Google Patents
Tunnelling pressure sensor Download PDFInfo
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- CN105006520B CN105006520B CN201510335552.2A CN201510335552A CN105006520B CN 105006520 B CN105006520 B CN 105006520B CN 201510335552 A CN201510335552 A CN 201510335552A CN 105006520 B CN105006520 B CN 105006520B
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Abstract
The present invention relates to a kind of tunnelling pressure sensor, its cell sensor uses double potential barrier unipotential trap system, and potential well layer uses well structure, is made up of the hexagonal boron nitride and the Be ion doping boron nitride being clipped in the middle at two ends；First barrier layer and the second barrier layer are graphene film layer and are respectively equipped with metal electrode；Silica base top is with hexagonal boron nitride substrate, and the first barrier layer and the second barrier layer length are in hexagonal boron nitride substrate top surface, and oxidation silicon base bottom sets silicon electrode；Cell sensor is arranged in hexagonal boron nitride substrate surface in the way of N × N；Apply bias voltage V between the first barrier layer and the second barrier layerb=0.3 0.5V, applies grid voltage V between second layer potential barrier and silicon electrodeg=14‑16V.Compared to other kinds of pressure sensor, more preferably, remolding sensitivity silicon power sensitive film sensor will high nearly an order of magnitude for the stability of the tunnelling pressure sensor designed by the present invention.
Description
Technical field
The present invention relates to a kind of tunnelling pressure sensor, belong to MEMS technology field, it is particularly a kind of based on graphene
Tunnelling pressure sensor.
Background technology
Widely, existing MEMS pressure sensor generally uses silicon thin film, due to silicon for the application of MEMS pressure sensor
Physical property it is limited, existing MEMS pressure sensor size is larger, and sensitivity is limited, can only achieve micro-meter scale, in nanometer
Field is difficult to be used widely.This just awaits being based on new principle, and the device of new effect breaks through the limit of micro electro mechanical device.
Because the physical limit of conditional electronic material gradually shows, researcher's serious hope finds some new materials and carrys out preparing device
Part, therefore seek the nano material with particular characteristic and prepare electronic device as focus.In the research process of nano material
In, the nano structural material of carbon receives much concern always.Graphene is the new carbon that thickness is individual layer atom, with uniqueness
Electronic structure and high mobility carrier properties.The dilute valence band of graphite and conduction band intersect at the drift angle of hexagon Brillouin zone,
The semiconductor that energy gap is zero, at the drift angle near electronics and hole be presented linear dispersion relation, its equation of motion with effectively
The Dirac equation that quality is met by zero fermion is similar.This phenomenon causes graphene quantum hall effect, most occur
The novel electrical properties such as a small amount of electron conductivity, quantum Interferences have in terms of microelectronics, surface treatment and catalysis
Important application prospect.
The theory for the tunneling effect of graphene system is mainly in two fields with application study in recent years：One is to carry
The ability and its stability of high tunnelling current；Two be the physical process of resonance tunnel-through.In order to solve the above problems, Northcentral University
Li Meng committees et al. once use a kind of use unipotential of the design of material such as graphene/hexagonal boron nitride to build pair pressure of potential well systems
Sensor.In the above-described techniques, double potential well systems are built as sensing unit structure using unipotential, biasing can only be applied in potential barrier
Voltage VbTo produce tunnel current, it is impossible to reach effectively control barrier height and the purpose of additional transmission coefficient, therefore, resonate tunnel
Wear effect unobvious.
The content of the invention
The technical problem to be solved in the present invention is to provide it is a kind of be conducive to improving stability and sensitivity based on graphene
MEMS tunnelling pressure sensors.
To solve above technical problem, the technical solution adopted by the present invention is：
A kind of tunnelling pressure sensor, including cell sensor, oxidation silicon base,
Cell sensor use double potential barrier unipotential trap system, potential well layer be clipped in top the first barrier layer and bottom second
In the middle of barrier layer；Potential well layer uses well structure, hexagonal boron nitride and the Be ion doping boron nitride groups being clipped in the middle by two ends
Into；First barrier layer and the second barrier layer are graphene film layer and are respectively equipped with metal electrode；Silica base top with
Hexagonal boron nitride substrate, the first barrier layer and the second barrier layer length are in hexagonal boron nitride substrate top surface, oxidation silicon base bottom
If silicon electrode；
Cell sensor is arranged in oxidation silicon substrate surface in the way of N × N；
Apply bias voltage V between the first barrier layer and the second barrier layerb=0.3-0.5V, in second layer potential barrier and silicon
Apply grid voltage V between electrodeg=14-16V。
Linear dispersion relation of the graphene near dirac point makes it have zero band gap, and is used as function material using graphene
The nano-device of material but requires to open band gap.Common solution has：Change quantum size, chemical regulation, construction multilayer knot
Structure and plus external electric field, regulation and control dilute double-layer nanostructured quantum size of graphite etc..Because boron nitride and graphene have what is matched
Lattice constant, the present invention regulates and controls the electronic structure of graphene by building graphene/boron nitride heterojunction structure, reaches opening band
The purpose of gap.Have strong electric charge transfer between heterogeneous double-decker, the band gap of double layer heterojunction structure and carrier it is effective
Quality can be regulated and controled by way of changing interfloor distance and heap behaviour.This heterogeneous double-decker is special for the dilute electronics of regulation and control graphite
Property provide a kind of effective ways.
Analyzed based on more than, the operation principle of pressure sensor of the present invention is：Under pressure, graphene nano
Stress distribution and changing rule in band structure change, and built in field make it that quantum level is sent out in graphene nano band structure
Changing, quantum level change is so as to cause resonant tunnel current to change, by measuring the change of resonant tunnel current signal, just
A pressure mechanical signal can be obtained indirectly.
Potential well layer uses sub- well structure, in favor of improving the gold on current peak-to-valley ratio, the first barrier layer and the second barrier layer
Belong to electrode, tunelling electrons are provided to occur tunneling effect.In order to improve tunnelling current and its stability, the present invention is in the first potential barrier
Apply bias voltage V between layer and the second barrier layerb=0.3-0.5V, to produce stable tunnel current.In second layer potential barrier and
Aoxidize application grid voltage V between the silicon electrode of silicon base bottomg=14-16V, to adjust the neat dirac point of two layers of potential barrier, from
And reach effectively control barrier height and the purpose of additional transmission coefficient.By measuring the change of resonant tunnel current signal, just
Pressure measxurement can be realized.
As preferred scheme, the height of the first barrier layer and the second barrier layer is set as V1=285meV。
As preferred scheme, effective contact portion of the first barrier layer and potential well layer is the cylinder that section is semicircle, half
Footpath is set as D1=80nm;Effective contact portion of second barrier layer and potential well layer is cylinder, and radius is set as D2=120nm。
As preferred scheme, the gross thickness of potential well layer is set as 12 atomic layers thicks, and radius is set as d=120nm, gesture
The thickness of three straton well structures is uniformly distributed in well layer.
Compared to other kinds of pressure sensor, the range of the tunnelling pressure sensor designed by the present invention is larger, most
Big detection pressure is up to 1GPa, 1~2 order of magnitude big compared to other kinds of conventional pressure sensor.It is of the invention designed
Tunnelling pressure sensor can also realize the regulation of sensitivity by adjusting bias, sensed compared to other silicon power sensitive films
Big 1 order of magnitude is wanted in the sensitivity of device, and highly sensitive sensing unit can not only reduce the gain of modulate circuit, but also can
To improve the signal to noise ratio of measuring system.
Brief description of the drawings
Fig. 1 is the stereogram of cell sensor of the present invention；
Fig. 2 is the stereogram of array of pressure sensors of the present invention；
Fig. 3 is the tunnelling current measuring principle figure of pressure sensor of the present invention.
In figure, 1- silicon electrodes, 2- oxidation silicon bases, 3- hexagonal boron nitride substrates, metals of the 4- on the first barrier layer
Electrode, the barrier layers of 5- first, the hexagonal boron nitride on 6- tops, 7- Be ion doping boron nitride, the hexagonal boron nitride of 8- bottoms,
Metal electrodes of the 9- on the second barrier layer, the barrier layers of 10- second.
Embodiment-
The MEMS tunnelling pressure sensors based on graphene shown in Fig. 1, including cell sensor, oxidation silicon base 2.Its
In, cell sensor uses double potential barrier unipotential trap system, and potential well layer is clipped in first barrier layer 5 on top and the second potential barrier of bottom
In the middle of layer 10.First barrier layer 5 and the second barrier layer 10 are graphene film layer and are respectively equipped with metal electrode, i.e., located at first
Metal electrode 4 on barrier layer and the metal electrode on the second barrier layer 9.Potential well layer uses well structure, and six by top
Square boron nitride 6 and the hexagonal boron nitride 8 of bottom are constituted with the Be ion dopings boron nitride 7 for being clipped between which.
The height of first barrier layer 5 is set as V1=285meV, effective contact portion of the first barrier layer 5 and potential well layer is
Section is the cylinder of semicircle, and radius is set as D1=80nm.The height of second barrier layer 10 is set as V1=285meV, the second potential barrier
Effective contact portion of layer 10 and potential well layer is cylinder, and radius is set as D2=120nm.The gross thickness of potential well layer is set as 12
Individual atomic layers thick, radius is set as that the thickness of three straton well structures in d=120nm, potential well layer is uniformly distributed, and sets hvFor 4 originals
Sublayer is thick.
Grown with hexagonal boron nitride substrate 3, the first barrier layer 5 and the second barrier layer 10 in six sides at the top of oxidation silicon base 2
The upper surface of boron nitride substrate 3, oxidation silicon base 2 bottom sets silicon electrode 1.
As shown in Fig. 2 cell sensor is arranged in oxidation silicon base 2 surface in the way of N × N, N is the nature more than 1
Number, decomposition pressure sensor array.
As shown in figure 3, applying bias voltage V between the first barrier layer 5 and the second barrier layer 10b=0.3-0.5V,
Apply grid voltage V between two layers of potential barrier 10 and silicon electrode 1g=14-16V。
Claims (4)
1. a kind of tunnelling pressure sensor, including cell sensor, oxidation silicon base（2）, it is characterised in that：
Cell sensor uses double potential barrier unipotential trap system, and potential well layer is clipped in first barrier layer on top（5）With the second of bottom
Barrier layer（10）It is middle；Potential well layer uses well structure, the hexagonal boron nitride by two ends（6、8）With the Be ion dopings being clipped in the middle
Boron nitride（7）Composition；First barrier layer（5）With the second barrier layer（10）For graphene film layer and it is respectively equipped with metal electrode
（4、9）；
Aoxidize silicon base（2）Top is with hexagonal boron nitride substrate（3）, the first barrier layer（5）With the second barrier layer（10）Length exists
Hexagonal boron nitride substrate（3）Upper surface, aoxidizes silicon base（2）Bottom sets silicon electrode（1）；
Cell sensor is arranged in oxidation silicon base in the way of N × N（2）Surface；
In the first barrier layer（5）With the second barrier layer（10）Between apply bias voltage Vb=0.3-0.5V, in second layer potential barrier
（10）And silicon electrode（1）Between apply grid voltage Vg=14-16V。
2. tunnelling pressure sensor according to claim 1, it is characterised in that：First barrier layer（5）With the second barrier layer
（10）Height be set as V1=285meV。
3. tunnelling pressure sensor according to claim 2, it is characterised in that：First barrier layer（5）With having for potential well layer
Effect contact portion is the cylinder that section is semicircle, and radius is set as D1=80nm;Second barrier layer（10）It is effective with potential well layer
Contact portion is cylinder, and radius is set as D2=120nm。
4. tunnelling pressure sensor according to claim 3, it is characterised in that：The gross thickness of potential well layer is set as 12 originals
Sublayer is thick, and radius is set as that the thickness of three straton well structures in d=120nm, potential well layer is uniformly distributed.
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| CN201510335552.2A CN105006520B (en) | 2015-06-17 | 2015-06-17 | Tunnelling pressure sensor |
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| CN201510335552.2A CN105006520B (en) | 2015-06-17 | 2015-06-17 | Tunnelling pressure sensor |
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| CN105006520A CN105006520A (en) | 2015-10-28 |
| CN105006520B true CN105006520B (en) | 2017-08-11 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107941385B (en) * | 2017-08-14 | 2023-12-08 | 中北大学 | Pressure sensor based on graphene piezoresistance junction |
| CN107359235B (en) * | 2017-08-14 | 2023-10-03 | 中北大学 | Graphene pressure sensor |
| CN112129434B (en) * | 2019-06-25 | 2022-12-06 | 海宁先进半导体与智能技术研究院 | Electronic skin design for detecting pressure size and position by adopting two-dimensional material heterostructure |
| CN115683440B (en) * | 2022-11-18 | 2023-11-03 | 哈尔滨工业大学 | High-resolution graphene heterojunction air pressure sensor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199106A (en) * | 2011-12-23 | 2013-07-10 | Ihp有限责任公司/莱布尼茨创新微电子研究所 | P-type graphene base transistor |
| CN103400859A (en) * | 2013-08-13 | 2013-11-20 | 中国科学院上海微系统与信息技术研究所 | Graphene-based tunneling field-effect transistor unit and array and forming method of array |
| CN103493203A (en) * | 2011-03-22 | 2014-01-01 | 曼彻斯特大学 | Transistor device and materials for making the same |
| CN104155051A (en) * | 2014-08-21 | 2014-11-19 | 中北大学 | Wide range graphene high temperature pressure sensor |
| CN104409498A (en) * | 2014-12-10 | 2015-03-11 | 上海电机学院 | Graphene differential negative resistance transistor |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103493203A (en) * | 2011-03-22 | 2014-01-01 | 曼彻斯特大学 | Transistor device and materials for making the same |
| CN103199106A (en) * | 2011-12-23 | 2013-07-10 | Ihp有限责任公司/莱布尼茨创新微电子研究所 | P-type graphene base transistor |
| CN103400859A (en) * | 2013-08-13 | 2013-11-20 | 中国科学院上海微系统与信息技术研究所 | Graphene-based tunneling field-effect transistor unit and array and forming method of array |
| CN104155051A (en) * | 2014-08-21 | 2014-11-19 | 中北大学 | Wide range graphene high temperature pressure sensor |
| CN104409498A (en) * | 2014-12-10 | 2015-03-11 | 上海电机学院 | Graphene differential negative resistance transistor |
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