CN104393782A - Single-phase inverter used for high-voltage DC and switching circuit - Google Patents
Single-phase inverter used for high-voltage DC and switching circuit Download PDFInfo
- Publication number
- CN104393782A CN104393782A CN201410614392.0A CN201410614392A CN104393782A CN 104393782 A CN104393782 A CN 104393782A CN 201410614392 A CN201410614392 A CN 201410614392A CN 104393782 A CN104393782 A CN 104393782A
- Authority
- CN
- China
- Prior art keywords
- resistance
- effect transistor
- field effect
- connects
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/539—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency
- H02M7/5395—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency by pulse-width modulation
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/122—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters
- H02H7/1222—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters responsive to abnormalities in the input circuit, e.g. transients in the DC input
Abstract
The invention belongs to the electric energy conversion technical field and discloses a single-phase inverter used for high-voltage DC and a switching circuit. The single-phase inverter comprises an anti-reverse protection circuit, a voltage reduction module, the switching circuit and a control circuit; the input end of the anti-reverse protection circuit is connected with an external input end; the output end of the anti-reverse protection circuit is connected with the voltage reduction module and the switching circuit; the output end of the voltage reduction module is connected with the control circuit; the control circuit outputs two paths of mutually-complementary PWM signals; the switching circuit comprises four field-effect transistors from Q1 to Q4 which are connected with each other through adopting a bridge structure; high and low electric level of the first paths of PWM signals directly drive the field-effect transistor Q4 to be switched on and switched off; a driving circuit with a bootstrap function can drive the field-effect transistor Q3 to be switched on and switched off; high and low electric level of the second paths of PWM signals directly drive the field-effect transistor Q2 to be switched on and switched off; and a driving circuit with a bootstrap function can drive the field-effect transistor Q1 to be switched on and switched off. The single-phase inverter of the invention has the advantages of simple circuit structure as well as being flexible, practical, safe and reliable.
Description
Technical field
The present invention relates to electric energy switch technology field, particularly relate to a kind of reforming unit high voltage direct current being transformed into alternating current, specifically a kind of single-phase inverter being applicable to high voltage direct current conversion.
Background technology
Inverter is that direct current energy is transformed into alternating current (being generally 220v/50HZ sine or square wave).Popular says, inverter is a kind of device direct current (DC) being converted into alternating current (AC), generally comprise inverter bridge, control logic and filter circuit etc., its extensive use in our daily life, as: computer, TV, fan, illumination and automobile etc., the inverter but used in daily life is all a kind of electronic equipment low pressure (12V or 24V or 48V) direct current being changed into 220V alternating current substantially, and by transformer efficiency, the restriction of switching device parameter and heat radiation etc., the inverter output power sold on the market is general all less.Inverter for high voltage direct current is not yet visible at present.
Summary of the invention
The object of the invention is the defect for existing inverter technology, a kind of single-phase inverter is provided, thus solve the design defect that above-mentioned inverter can not realize high input voltage, high-power output.
For achieving the above object, the present invention adopts following technical scheme: a kind of single-phase inverter for high voltage direct current, comprise counnter attack protective circuit, voltage reduction module, switching circuit and control circuit, the input termination high voltage direct current outside input of counnter attack protective circuit, export the input of termination voltage reduction module and the direct-flow input end of switching circuit, the power input of the output connection control circuit of voltage reduction module, control circuit exports mutually complementary first via pwm signal and the second road pwm signal, it is characterized in that, described switching circuit comprises direct current positive input terminal for inputting high voltage direct current and direct current negative input end, first ac output end, second ac output end, first via pwm signal incoming end, second road pwm signal incoming end, field effect transistor Q1 is connected between direct current positive input terminal and the first ac output end, field effect transistor Q2 is connected between direct current negative input end and the first ac output end, field effect transistor Q3 is connected between direct current positive input terminal and the second ac output end, and field effect transistor Q4 is connected between direct current negative input end and the second ac output end, the high and low level Direct driver field effect transistor Q4 conducting of first via pwm signal and disconnection, and the drive circuit of band bootstrapping function drives field effect transistor Q3 to disconnect and conducting, the conducting of the high and low level Direct driver field effect transistor Q2 of the second road pwm signal and disconnection, and the drive circuit of band bootstrapping function drives field effect transistor Q1 to disconnect and conducting.
Further, described counnter attack protective circuit comprises at least one diode or at least one rectifier bridge, connects anti-ballisticly send a telegraph device in road and burn for preventing input direct current both positive and negative polarity.Described counnter attack protective circuit is divided into two kinds of patterns according to the multi-form of design circuit, and when one is the reversal connection of input both positive and negative polarity, this single-phase inverter does not work, and when another kind is the reversal connection of input both positive and negative polarity, this single-phase inverter normally works.
Further, described voltage reduction module, for the high voltage direct current of input being converted to the low-voltage DC that control circuit needs, ensureing the normal operation of control circuit, preferably having the DC-DC module of buck functionality.
Particularly, described counnter attack protective circuit comprises a rectifier bridge D7, and described voltage reduction module comprises a DC-DC step-down chip U2; The input of two-way high voltage direct current outside connects two inputs of rectifier bridge D7 respectively, the positive and negative output of rectifier bridge D7 connects two inputs of step-down chip U2 respectively, electric capacity C3 is connected between the positive and negative output of rectifier bridge D7, the positive output end of step-down chip U2 exports low-voltage DC through resistance R13, electric capacity C4 is connected between one end that negative output terminal and the resistance R13 of negative output termination GND, step-down chip U2 export low-voltage DC.
Further, in described switching circuit, field effect transistor Q1 drain electrode connects the positive output end of rectifier bridge D7, source electrode connects the first ac output end, grid is through one end of resistance R2, resistance R1, diode D1 connecting resistance R13 output low-voltage DC, and between triode Q5 collector electrode connecting resistance R1 and R2, emitter meets GND, base stage meets GND through resistance R4, and exports one end of low-voltage DC through resistance R3, resistance R5 connecting resistance R13; Electric capacity C1 anode connects between diode D1 and resistance R1, and negative electrode connects field effect transistor Q1 source electrode; Diode D2 anode connects field effect transistor Q1 source electrode, and negative electrode connects field effect transistor Q1 grid.
Field effect transistor Q2 drain electrode connects the first ac output end, and source electrode meets GND, and grid connects diode D3 anode.
Field effect transistor Q3 drain electrode connects the positive output end of rectifier bridge D7, and source electrode connects the second ac output end, and grid is through one end of resistance R8, resistance R7, diode D4 connecting resistance R13 output low-voltage DC; Between triode Q6 collector electrode connecting resistance R7 and R8, emitter meets GND, and base stage meets GND through resistance R10, and exports one end of low-voltage DC through resistance R9, resistance R11 connecting resistance R13; Electric capacity C2 anode connects between diode D4 and resistance R7, and negative electrode connects field effect transistor Q3 source electrode; Diode D5 anode connects field effect transistor Q3 source electrode, and negative electrode connects field effect transistor Q3 grid.
Field effect transistor Q4 drain electrode connects the second ac output end, and source electrode meets GND, and grid connects diode D6 anode.
Further, control circuit of telling, for driving the break-make of said switching circuit breaker in middle device, described control circuit comprises a pwm chip U1, the power input pin Vcc connecting resistance R13 of pwm chip U1 exports one end of low-voltage DC, pwm signal output pin CS1 connects between connecting resistance R9 and R11 and diode D6 negative electrode, and connects field effect transistor Q4 grid through resistance R12.With diode D3 negative electrode between pwm signal output pin CS2 connecting resistance R3 and R5, and connect field effect transistor Q2 grid through resistance R6.
Further, the preferred TL494C chip of described pwm chip U1, the positive output end of a termination rectifier bridge D7 of resistance R14, the other end meets GND through resistance R5; Diode D8 negative electrode connects the positive output end of rectifier bridge D7, between anode connecting resistance R14 and resistance R15; Electric capacity C6 positive terminating diode D8 anode, negative terminal meets GND; Resistance R17 mono-terminating diode D8 anode, the first negative input pin 1IN-of another termination control chip U1; Resistance R16 mono-termination capacitor C6 negative terminal, the DTC pin of another termination control chip U1 and electric capacity C6 anode; Connect between the DTC pin of control chip U1 and CS1 pin and be connected with electric capacity C8, and be connected with electric capacity C9 between CS2 pin; The RT pin of control chip U1 meets GND through resistance R18; The CT of control chip U1 draws foot meridian capacitor C7 and meets GND; Control chip U1 first negative input pin 1IN-, second negative input pin 2IN-, Verf pin, Ctrl pin are interconnected; First positive input pin 1IN+, the second positive input pin 2IN+ of control chip U1 meet GND.
In addition, another object of the present invention proposes separately a kind of switching circuit becoming interchange for high voltage direct current, comprise direct current positive input terminal for inputting high voltage direct current and direct current negative input end, the first ac output end, the second ac output end, for inputting the first via pwm signal incoming end of first via pwm signal, for inputting the second road pwm signal incoming end with the second road pwm signal of first via pwm signal complementation; Field effect transistor Q1 is connected between direct current positive input terminal and the first ac output end, field effect transistor Q2 is connected between direct current negative input end and the first ac output end, field effect transistor Q3 is connected between direct current positive input terminal and the second ac output end, and field effect transistor Q4 is connected between direct current negative input end and the second ac output end; The high and low level Direct driver field effect transistor Q4 conducting of first via pwm signal and disconnection, and the drive circuit of band bootstrapping function drives field effect transistor Q3 to disconnect and conducting; The conducting of the high and low level Direct driver field effect transistor Q2 of the second road pwm signal and disconnection, and the drive circuit of band bootstrapping function drives field effect transistor Q1 to disconnect and conducting.
In said switching circuit, field effect transistor Q1 drain electrode connects direct current positive input terminal, source electrode connects the first ac output end, grid connects low-voltage DC through resistance R2, resistance R1, diode D1, between triode Q5 collector electrode connecting resistance R1 and R2, emitter meets GND, and base stage meets GND through resistance R4, and connects low-voltage DC through resistance R3, resistance R5; Electric capacity C1 anode connects between diode D1 and resistance R1, and negative electrode connects field effect transistor Q1 source electrode; Diode D2 negative electrode connects field effect transistor Q1 source electrode, and anode connects field effect transistor Q1 grid.
Field effect transistor Q2 drain electrode connects the first ac output end, and source electrode connects direct current negative input end, and grid connects diode D3 negative electrode.
Field effect transistor Q3 drain electrode connects direct current positive input terminal, and source electrode connects the second ac output end, and grid connects low-voltage DC through resistance R8, resistance R7, diode D4; Between triode Q6 collector electrode connecting resistance R7 and R8, emitter meets GND, and base stage meets GND through resistance R10, and connects low-voltage DC through resistance R9, resistance R11; Electric capacity C2 anode connects between diode D4 and resistance R7, and negative electrode connects field effect transistor Q3 source electrode; Diode D5 negative electrode connects field effect transistor Q3 source electrode, and anode connects field effect transistor Q3 grid.
Field effect transistor Q4 drain electrode connects the second ac output end, and source electrode connects direct current negative input end, and grid connects diode D6 negative electrode.
With diode D6 anode between first pwm signal incoming end connecting resistance R9 and R11, and connect field effect transistor Q4 grid through resistance R12.
With diode D3 anode between second pwm signal incoming end connecting resistance R3 and R5, and connect field effect transistor Q2 grid through resistance R6.
Beneficial effect of the present invention comprises: the function that the conversion 1, achieving high voltage direct current by global design exchanges, and has filled up the blank of high-voltage d. c inverse transform device on market.2, create the switching circuit that two-way pwm signal controls four switching devices that bridge-type connects, simplify circuit structure, and greatly reduce the requirement to control circuit.3, full-bridge type counnter attack protection, connects arbitrarily outside input, practical flexibly.Selecting of DC-DC voltage reduction module, before realizing the function that step-down powers under topic, ensure that the safety and stability of circuit is reliable.
Accompanying drawing explanation
Fig. 1 is the theory diagram of high-voltage d. c inverse transform device of the present invention.
Fig. 2 is counnter attack protective circuit schematic diagram of the present invention.
Fig. 3 is the complementary PWM signals figure of high-voltage d. c inverse transform device of the present invention.
Fig. 4 is the schematic diagram of high-voltage d. c inverse transform device of the present invention.
Fig. 5 is switching circuit schematic diagram of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
With reference to Fig. 1, the invention provides a kind of high-voltage d. c inverse transform device, comprise counnter attack protective circuit, DC-DC module, switching circuit and control circuit.
The input termination high voltage direct current of counnter attack protective circuit; output connects the input of DC-DC module and the input of switching circuit respectively; the input of the output connection control circuit of DC-DC module; the control end of the output termination switching circuit of control circuit; the input of the output termination filter circuit of switching circuit, the output output AC signal of filter circuit.
With reference to Fig. 2, counnter attack protective circuit comprises at least one diode or at least one rectifier bridge, connects anti-ballisticly send a telegraph device in road and burn for preventing input direct current both positive and negative polarity.Described counnter attack protective circuit is divided into two kinds of patterns according to the multi-form of design circuit, when one is the reversal connection of input both positive and negative polarity, this single-phase inverter does not work, as shown in Figure 2 (a) shows, as can be seen from Fig. 2 (a), when HVCC+ and HVCC-reversal connection, be subject to the reverse cut-off effect of diode, can not loop be formed; When another kind is the reversal connection of input both positive and negative polarity, this single-phase inverter normally works, as shown in Fig. 2 (b) (c), wherein Fig. 2 (b) is the rectification circuit be made up of four diodes, no matter HVCC+ and HVCC-is just connecing or reversal connection, the polarity exported is all constant, the in like manner all-wave that forms for some diodes of Fig. 2 (c) or halfwave rectifier bridge module, principle is consistent with Fig. 2 (b).
DC-DC module, for the high voltage direct current of input being converted to the low-voltage DC that control circuit needs, for control circuit provides necessary power supply supply.
With reference to Fig. 3, control circuit is used for the break-make of driving switch circuit breaker in middle device, this control circuit at least exports two-way complementary PWM signals, wherein PWM1 and PWM2 is one group of complementary signal, this drive singal ensures that in Fig. 3, while first hush pipe Q1 and the 4th field effect transistor Q4 conducting, the second field effect transistor Q2 and the 3rd field effect transistor Q3 ends, the second field effect transistor Q2 and the 3rd field effect transistor Q3 conducting while first hush pipe Q1 and the 4th field effect transistor Q4 ends.
With reference to Fig. 4, intermediate portion is divided into switching circuit, comprises at least one semiconductor switch, at least one resistance, at least one diode, at least one electric capacity, inverter of the present invention comprises the first field effect transistor Q1, second field effect transistor Q2, 3rd field effect transistor Q3, 4th field effect transistor Q4, first diode D1, second diode D2, 3rd diode D3, 4th diode D4, 5th diode D5, 6th diode D6, first triode Q5, second triode Q6, first resistance R1, second resistance R2, 3rd resistance R3, 4th resistance R4, 5th resistance R5, 6th resistance R6, 7th resistance R7, 8th resistance R8, 9th resistance R9, tenth resistance R10, 11 resistance R11, 12 resistance R12, 13 resistance R13, 14 resistance R14, 15 resistance R15, 16 resistance R16, 17 resistance R17, 18 resistance R18, first electric capacity C1, second electric capacity C2, 3rd electric capacity C3, 4th electric capacity C4, 5th electric capacity C5, 6th electric capacity C6, 7th electric capacity C7, 8th electric capacity C8, power module U2, rectifier bridge D7, fuse F1, control chip U1, high-voltage DC power supply HVCC, low-voltage dc power supply VCC and ground GND.
Power supply is DC power supply, and concrete connected mode is as follows:
The one termination outside input of fuse F1, an input of another termination rectifier bridge D7, another input termination outside input of rectifier bridge D7, the positive output end of rectifier bridge D7 connects the anode of the 3rd electric capacity C3 and an input of rectification module U2 respectively, the negative output of rectifier bridge D7 connects another input of rectification module U2, one end of output termination the 13 resistance R13 of rectification module U2, the anode of the 13 another termination of resistance R13 the 4th electric capacity C4, the negative terminal of the 4th electric capacity C4 connects rectification module U2 negative output terminal, the anode of the positive termination first diode D1 of the 4th electric capacity C4,
First field effect transistor Q1 drain electrode is connected with high-voltage DC power supply HVCC, first field effect transistor Q1 grid is connected with second resistance R2 one end and the second diode D2 negative electrode respectively, the second resistance R2 other end is connected with first resistance R1 one end and the first triode Q5 collector electrode respectively, the first resistance R1 other end is connected with the first diode D1 negative electrode and the first electric capacity C1 positive pole respectively, first diode D1 anode is connected with low-voltage dc power supply VCC, first field effect transistor Q1 source electrode respectively with the second diode D2 anode, first electric capacity C1 negative pole is connected with the second field effect transistor Q2 drain electrode, low-voltage dc power supply VCC is connected with the 5th resistance R5 one end, the 5th resistance R5 other end is connected with the 3rd resistance R3 and the 3rd diode D3 negative electrode respectively, the 3rd resistance R3 other end is connected with the 4th resistance R4 one end and the first triode Q5 base stage respectively, the 4th resistance R4 other end is connected with the one or three extreme Q5 emitter.
Second field effect transistor Q2 grid is connected with the 3rd diode D3 anode and the 6th resistance R6 one end respectively, the 6th resistance R6 other end is connected with the 3rd diode D3 negative electrode, 3rd diode D3 negative electrode connects control signal, and the second field effect transistor Q2 source electrode is connected with the 3rd field effect transistor Q4 source electrode and GND respectively.
3rd field effect transistor Q3 drain electrode is connected with high-voltage DC power supply HVCC, 3rd field effect transistor Q3 grid is connected with the 8th resistance R8 one end and the 5th diode D5 negative electrode respectively, the 5th resistance R5 other end is connected with the 7th resistance R7 one end and the second triode Q6 collector electrode respectively, the 7th resistance R7 other end is connected with the 4th diode D4 negative electrode and the second electric capacity C2 positive pole respectively, 4th diode D4 anode is connected with low-voltage dc power supply VCC, 3rd field effect transistor Q3 source electrode respectively with the 5th diode D5 anode, second electric capacity C2 negative pole is connected with the 4th field effect transistor Q4 drain electrode, low-voltage dc power supply VCC is connected with the 11 resistance R11 one end, the other end of the 11 resistance R11 is connected with the 9th resistance R9 and the 6th diode D6 negative electrode respectively, the 9th resistance R9 other end is connected with the tenth resistance R10 one end and the second triode Q6 base stage respectively, the tenth resistance R10 other end is connected with the two or three extreme Q6 emitter.
4th field effect transistor Q4 grid is connected with the 6th diode D6 anode and the 12 resistance R12 one end respectively, and the 12 resistance R12 other end is connected with the 6th diode D6 negative electrode, and the 6th diode D6 negative electrode is connected with pwm control signal.
The anode of the 3rd electric capacity C3 connects one end of the 14 resistance R14 and the negative electrode of the 8th diode D8 respectively, the other end of the 14 resistance R14 connects the anode of the 8th diode D8 respectively, one end of 15 resistance R15 and the anode of the 6th electric capacity C6, the 15 resistance R15 other end connects the negative terminal of the 6th electric capacity C6 and one end of the 16 resistance R16 respectively, another termination pwm chip U1 the 4th pin of the 16 resistance R16, 2nd pin of the one termination pwm chip U1 of the 17 resistance R17, the anode of another termination the 6th electric capacity C6 of the 17 resistance R17, 1 pin of control chip U1 meets GND, 2nd pin of control chip U1 connects the 13rd of control chip U1 the respectively, 14 and 15 pin, 4th pin of control chip U1 connects the anode of the 16 resistance R16 and one end of the 8th electric capacity C8 respectively, 8th pin of another termination control chip U1 of the 8th electric capacity C8, 8th pin of control chip U1 connects the negative electrode of the 6th diode D6, 5th pin of control chip U1 connects one end of the 7th electric capacity C7, the other end of the 7th electric capacity C7 connects one end of the 18 resistance R18 and the 7th pin of control chip U1 respectively, 6th pin of another termination control chip U1 of the 18 resistance R18, 7th pin of control chip U1 meets GND, 9th pin of control chip U1 connects the 10th pin of control chip U1 and meets GND simultaneously, 11st pin of control chip U1 connects the negative electrode of the 3rd diode D3 and one end of the 9th electric capacity C9 respectively, the anode of another termination the 6th electric capacity C6 of the 9th electric capacity C9, 12nd pin of control chip U1 meets low-voltage dc power supply VCC, 16th pin of control chip U1 meets GND.
The anode of the one termination second diode D2 of the 5th electric capacity C5, the anode of another termination the 5th diode D5 of the 5th electric capacity C5, the two ends of the 5th electric capacity C5 are the output of inverter.
Claims (7)
1., for a single-phase inverter for high voltage direct current, comprise counnter attack protective circuit, voltage reduction module, switching circuit and control circuit; The input termination high voltage direct current outside input of counnter attack protective circuit, exports the input of termination voltage reduction module and the direct-flow input end of switching circuit; The power input of the output connection control circuit of voltage reduction module; Control circuit exports mutually complementary first via pwm signal and the second road pwm signal; It is characterized in that, described switching circuit comprises direct current positive input terminal for inputting high voltage direct current and direct current negative input end, and the first ac output end, the second ac output end, first via pwm signal incoming end, the second road pwm signal incoming end; Field effect transistor Q1 is connected between direct current positive input terminal and the first ac output end, field effect transistor Q2 is connected between direct current negative input end and the first ac output end, field effect transistor Q3 is connected between direct current positive input terminal and the second ac output end, and field effect transistor Q4 is connected between direct current negative input end and the second ac output end; The high and low level Direct driver field effect transistor Q4 conducting of first via pwm signal and disconnection, and the drive circuit of band bootstrapping function drives field effect transistor Q3 to disconnect and conducting; The conducting of the high and low level Direct driver field effect transistor Q2 of the second road pwm signal and disconnection, and the drive circuit of band bootstrapping function drives field effect transistor Q1 to disconnect and conducting.
2. the single-phase inverter for high voltage direct current according to claim 1, is characterized in that, counnter attack protective circuit comprises rectifier bridge D7, and voltage reduction module comprises DC-DC step-down chip U2; Two input termination two-way high voltage direct current outside input of rectifier bridge D7, positive and negative output connects two inputs of step-down chip U2 respectively, electric capacity C3 is connected between the positive and negative output of rectifier bridge D7, the positive output end of step-down chip U2 exports low-voltage DC through resistance R13, electric capacity C4 is connected between one end that negative output terminal and the resistance R13 of negative output termination GND, step-down chip U2 export low-voltage DC;
Field effect transistor Q1 drain electrode connects the positive output end of rectifier bridge D7, source electrode connects the first ac output end, grid is through one end of resistance R2, resistance R1, diode D1 connecting resistance R13 output low-voltage DC, between triode Q5 collector electrode connecting resistance R1 and R2, emitter meets GND, base stage meets GND through resistance R4, and exports one end of low-voltage DC through resistance R3, resistance R5 connecting resistance R13; Electric capacity C1 anode connects between diode D1 and resistance R1, and negative electrode connects field effect transistor Q1 source electrode; Diode D2 anode connects field effect transistor Q1 source electrode, and negative electrode connects field effect transistor Q1 grid;
Field effect transistor Q2 drain electrode connects the first ac output end, and source electrode meets GND, and grid connects diode D3 anode;
Field effect transistor Q3 drain electrode connects the positive output end of rectifier bridge D7, and source electrode connects the second ac output end, and grid is through one end of resistance R8, resistance R7, diode D4 connecting resistance R13 output low-voltage DC; Between triode Q6 collector electrode connecting resistance R7 and R8, emitter meets GND, and base stage meets GND through resistance R10, and exports one end of low-voltage DC through resistance R9, resistance R11 connecting resistance R13; Electric capacity C2 anode connects between diode D4 and resistance R7, and negative electrode connects field effect transistor Q3 source electrode; Diode D5 anode connects field effect transistor Q3 source electrode, and negative electrode connects field effect transistor Q3 grid;
Field effect transistor Q4 drain electrode connects the second ac output end, and source electrode meets GND, and grid connects diode D6 anode;
The power input pin Vcc connecting resistance R13 of pwm chip exports one end of low-voltage DC, and pwm signal output pin CS1 connects between connecting resistance R9 and R11 and diode D6 negative electrode, and connects field effect transistor Q4 grid through resistance R12; With diode D3 negative electrode between pwm signal output pin CS2 connecting resistance R3 and R5, and connect field effect transistor Q2 grid through resistance R6.
3. the single-phase inverter for high voltage direct current according to claim 1, is characterized in that, described counnter attack protective circuit comprises at least one diode or at least one rectifier bridge.
4. the single-phase inverter for high voltage direct current according to claim 2, is characterized in that, described pwm chip selects TL494C chip.
5. the single-phase inverter for high voltage direct current according to claim 4, is characterized in that, the positive output end of a termination rectifier bridge D7 of resistance R14, and the other end meets GND through resistance R5; Diode D8 negative electrode connects the positive output end of rectifier bridge D7, between anode connecting resistance R14 and resistance R15; Electric capacity C6 positive terminating diode D8 anode, negative terminal meets GND; Resistance R17 mono-terminating diode D8 anode, the first negative input pin 1IN-of another termination control chip U1; Resistance R16 mono-termination capacitor C6 negative terminal, the DTC pin of another termination control chip U1 and electric capacity C6 anode; Connect between the DTC pin of control chip U1 and CS1 pin and be connected with electric capacity C8, and be connected with electric capacity C9 between CS2 pin; The RT pin of control chip U1 meets GND through resistance R18; The CT of control chip U1 draws foot meridian capacitor C7 and meets GND; Control chip U1 first negative input pin 1IN-, second negative input pin 2IN-, Verf pin, Ctrl pin are interconnected; First positive input pin 1IN+, the second positive input pin 2IN+ of control chip U1 meet GND.
6. become the switching circuit exchanged for high voltage direct current, comprise direct current positive input terminal for inputting high voltage direct current and direct current negative input end, the first ac output end, the second ac output end, for input first via pwm signal first via pwm signal incoming end, for inputting the second road pwm signal incoming end with the second road pwm signal of first via pwm signal complementation; It is characterized in that, field effect transistor Q1 is connected between direct current positive input terminal and the first ac output end, field effect transistor Q2 is connected between direct current negative input end and the first ac output end, field effect transistor Q3 is connected between direct current positive input terminal and the second ac output end, and field effect transistor Q4 is connected between direct current negative input end and the second ac output end; The high and low level Direct driver field effect transistor Q4 conducting of first via pwm signal and disconnection, and the drive circuit of band bootstrapping function drives field effect transistor Q3 to disconnect and conducting; The conducting of the high and low level Direct driver field effect transistor Q2 of the second road pwm signal and disconnection, and the drive circuit of band bootstrapping function drives field effect transistor Q1 to disconnect and conducting.
7. the switching circuit becoming interchange for high voltage direct current according to claim 6, it is characterized in that, field effect transistor Q1 drain electrode connects direct current positive input terminal, source electrode connects the first ac output end, grid connects low-voltage DC through resistance R2, resistance R1, diode D1, and between triode Q5 collector electrode connecting resistance R1 and R2, emitter meets GND, base stage meets GND through resistance R4, and connects low-voltage DC through resistance R3, resistance R5; Electric capacity C1 anode connects between diode D1 and resistance R1, and negative electrode connects field effect transistor Q1 source electrode; Diode D2 negative electrode connects field effect transistor Q1 source electrode, and anode connects field effect transistor Q1 grid;
Field effect transistor Q2 drain electrode connects the first ac output end, and source electrode connects direct current negative input end, and grid connects diode D3 negative electrode;
Field effect transistor Q3 drain electrode connects direct current positive input terminal, and source electrode connects the second ac output end, and grid connects low-voltage DC through resistance R8, resistance R7, diode D4; Between triode Q6 collector electrode connecting resistance R7 and R8, emitter meets GND, and base stage meets GND through resistance R10, and connects low-voltage DC through resistance R9, resistance R11; Electric capacity C2 anode connects between diode D4 and resistance R7, and negative electrode connects field effect transistor Q3 source electrode; Diode D5 negative electrode connects field effect transistor Q3 source electrode, and anode connects field effect transistor Q3 grid;
Field effect transistor Q4 drain electrode connects the second ac output end, and source electrode connects direct current negative input end, and grid connects diode D6 negative electrode;
With diode D6 anode between first pwm signal incoming end connecting resistance R9 and R11, and connect field effect transistor Q4 grid through resistance R12; With diode D3 anode between second pwm signal incoming end connecting resistance R3 and R5, and connect field effect transistor Q2 grid through resistance R6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410614392.0A CN104393782A (en) | 2014-11-05 | 2014-11-05 | Single-phase inverter used for high-voltage DC and switching circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410614392.0A CN104393782A (en) | 2014-11-05 | 2014-11-05 | Single-phase inverter used for high-voltage DC and switching circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104393782A true CN104393782A (en) | 2015-03-04 |
Family
ID=52611632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410614392.0A Pending CN104393782A (en) | 2014-11-05 | 2014-11-05 | Single-phase inverter used for high-voltage DC and switching circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104393782A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110224617A (en) * | 2019-07-08 | 2019-09-10 | 维尔纳（福建）电机有限公司 | A kind of anti-reverse silicon controlled rectifier route |
| CN112105110A (en) * | 2020-09-12 | 2020-12-18 | 深圳市维盛泰光电有限公司 | Multipurpose two-wire drive circuit |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1557597A (en) * | 2004-01-15 | 2004-12-29 | 沈阳工业大学 | Multifunctional integrated welding and cutting equipment |
| CN102420539A (en) * | 2010-09-28 | 2012-04-18 | 常州锦旸太阳能科技有限公司 | Inverter |
| CN102510205A (en) * | 2011-11-08 | 2012-06-20 | 中国兵器工业集团第七0研究所 | Wide-range input direct-current rectification filter circuit |
| CN202424280U (en) * | 2011-11-29 | 2012-09-05 | 中国北车股份有限公司大连电力牵引研发中心 | Direct current (DC) charger |
| CN102916584A (en) * | 2012-10-29 | 2013-02-06 | 华为技术有限公司 | Method and device for controlling current of converter and UPS (uninterruptible power supply) |
| CN203339945U (en) * | 2013-05-29 | 2013-12-11 | 上海载德信息科技有限公司 | Vehicle-mounted power supply transformation protection device |
| CN203722534U (en) * | 2013-12-11 | 2014-07-16 | 深圳市联翔电机有限公司 | Cooling fan |
-
2014
- 2014-11-05 CN CN201410614392.0A patent/CN104393782A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1557597A (en) * | 2004-01-15 | 2004-12-29 | 沈阳工业大学 | Multifunctional integrated welding and cutting equipment |
| CN102420539A (en) * | 2010-09-28 | 2012-04-18 | 常州锦旸太阳能科技有限公司 | Inverter |
| CN102510205A (en) * | 2011-11-08 | 2012-06-20 | 中国兵器工业集团第七0研究所 | Wide-range input direct-current rectification filter circuit |
| CN202424280U (en) * | 2011-11-29 | 2012-09-05 | 中国北车股份有限公司大连电力牵引研发中心 | Direct current (DC) charger |
| CN102916584A (en) * | 2012-10-29 | 2013-02-06 | 华为技术有限公司 | Method and device for controlling current of converter and UPS (uninterruptible power supply) |
| CN203339945U (en) * | 2013-05-29 | 2013-12-11 | 上海载德信息科技有限公司 | Vehicle-mounted power supply transformation protection device |
| CN203722534U (en) * | 2013-12-11 | 2014-07-16 | 深圳市联翔电机有限公司 | Cooling fan |
Non-Patent Citations (1)
| Title |
|---|
| DWANDERING: "TL494单相正弦逆变--电源毕业设计", 《HTTP://WENKU.BAIDU.COM/LINK?URL=HCRF952JCMGDAP263IS9KQKCRLDR_GVRPLC0OEJTCJ_V6WE_ZNBQI-RNP9M4PUMIPY9Q5TPE-WSTEJZSIDOV6MJ0FJSXRH4Z111YAQAN7ZQ》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110224617A (en) * | 2019-07-08 | 2019-09-10 | 维尔纳（福建）电机有限公司 | A kind of anti-reverse silicon controlled rectifier route |
| CN110224617B (en) * | 2019-07-08 | 2024-03-29 | 维尔纳集电电子科技(福建)有限公司 | Reverse connection preventing silicon controlled rectifier circuit |
| CN112105110A (en) * | 2020-09-12 | 2020-12-18 | 深圳市维盛泰光电有限公司 | Multipurpose two-wire drive circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108736702A (en) | Totem non-bridge PFC circuits, power supply change-over device and air conditioner | |
| CN203674082U (en) | Relay control circuit | |
| CN104300769B (en) | A kind of isolated form H bridge driving devices | |
| CN103715869B (en) | The multi-path isolated power device switch drive module of power conversion controller | |
| CN201199743Y (en) | Lamp string control circuit | |
| CN208589916U (en) | It is a kind of with overvoltage protection and it is anti-sparking function dc power interface circuit | |
| CN104393782A (en) | Single-phase inverter used for high-voltage DC and switching circuit | |
| CN103929087A (en) | High-efficiency high-power-factor two-way AC/DC converter | |
| CN207426994U (en) | A kind of general inverter | |
| CN204406088U (en) | Safety energy-saving controller for home appliance | |
| CN106487249A (en) | A kind of high-gain non-bridge PFC changer for low-voltage, high-current occasion | |
| CN204290777U (en) | A kind of single-phase inverter for high voltage direct current | |
| CN206099744U (en) | Emergency lighting is power inverter for power | |
| CN208782557U (en) | A kind of solar charging/discharging control circuit | |
| CN204859030U (en) | Sinusoidal inverter of high voltage direct current | |
| CN206250980U (en) | Current mode Push-Pull power translation circuit | |
| CN203840244U (en) | Driving mechanism for electric riveting gun | |
| CN203537238U (en) | Interleaved parallel working DC buck circuit | |
| CN203151827U (en) | Ultra-long-life large-current light emitting diode (LED) drive power circuit | |
| CN206260106U (en) | A kind of twin-stage PFC dimming driving circuits | |
| CN206180992U (en) | There is not power consumption electronic switch | |
| CN204481708U (en) | A kind of high-voltage power pipe and power module | |
| CN212343649U (en) | Boost circuit and short-circuit protection circuit and LED drive circuit thereof | |
| CN204651943U (en) | A kind of distributed power source cutting-in control circuit | |
| CN204012794U (en) | Two-stage safeguard protection FEEDBACK CONTROL charger |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150304 |
|
| RJ01 | Rejection of invention patent application after publication |