CN104231701A - Infrared radiating coating for photovoltaic module backing plate and preparation method of radiating photovoltaic module backing plate - Google Patents
Infrared radiating coating for photovoltaic module backing plate and preparation method of radiating photovoltaic module backing plate Download PDFInfo
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- CN104231701A CN104231701A CN201410525613.7A CN201410525613A CN104231701A CN 104231701 A CN104231701 A CN 104231701A CN 201410525613 A CN201410525613 A CN 201410525613A CN 104231701 A CN104231701 A CN 104231701A
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention discloses an infrared radiating coating for a photovoltaic module backing plate and a preparation method of a radiating photovoltaic module backing plate, relates to radiating coatings and preparation methods of photovoltaic module radiating backing plates and aims to solve the technical problems that existing metal heat conduction layers for reducing temperature of solar cell backing plates are poor in weather resistance and high in costs. The infrared radiating coating is formed by a carbon material, a binding agent and a solvent. The method for preparing the radiating photovoltaic module backing plate includes that (1) a radiating area of a backing plate of an already packaged photovoltaic module or module semi-finished product is cleaned; (2) the carbon material, the binding agent and the solvent are uniformly mixed to obtain a sizing agent; (3) the sizing agent coats the radiating area of the backing plate; (4) curing is performed to obtain the radiating photovoltaic module backing plate. Compared with modules without the infrared radiating coating, the prepared radiating photovoltaic module backing plate coated with the infrared radiating coating has the advantages that during working state, the average temperature of the backing plate is reduced by 3 DEG C-4 DEG C, and the output power of the photovoltaic module is increased by 1%-1.8%.
Description
Technical field
The present invention relates to a kind of heat radiation coating, especially relate to infrared heat radiation coating and preparation technology thereof that a kind of backboard for photovoltaic module dispels the heat, belong to technical field of photovoltaic power generation.
Background technology
Photovoltaic generation is a kind of new forms of energy, sun power can be transformed into electric energy by photovoltaic effect, generally speaking, continental rise photovoltaic generation is according to different electricity generation material, its efficiency of conversion is at 10-30%, mean that remaining sun power will be transformed into other forms such as heat energy and lose, the efficiency of conversion therefore improving constantly photovoltaic module is the direction that photovoltaic industry is made great efforts.
Photovoltaic generation is since widespread use, and there has been the use scale of up to a hundred GW in the whole world, and from independent family power generation system, centralized village power supply system, mixing or complementary power generation system, arrive grid-connected system etc., fairly large commercial applications of marching toward.Photovoltaic generating system in actual applications, under being generally in higher solar radiation, its power generation performance is comparatively large by the impact of natural environmental condition, and wherein system major parts---the working temperature of solar module is one of important factor affecting photovoltaic generating system performance.Solar energy power generating core cell is solar cell, drops into the mainly silicon system solar cell of large-scale commercial application at present: monocrystaline silicon solar cell, polysilicon solar cell and non-crystal silicon solar cell.
The structure of crystal silicon solar batteries assembly is made up of glass, cell piece string and backboard usually, is formed by EVA adhesive film encapsulation.Solar cell backboard is a kind of protectiveness material be used on solar module, is can normally work protection cell piece string 25 years and even longer time under various climatope.
Temperature, on the impact of silicon solar cell, is mainly reflected in the parameter variation with temperature such as the open circuit voltage of solar cell, short-circuit current, peak power and changes.The open circuit voltage of monomer solar cell reduces with the rising of temperature, and temperature conefficient of voltage is-(2.0 ~ 2.2) mv/ DEG C, and namely temperature often raises 1 DEG C, and monomer solar cell open circuit voltage reduces by 2.0 ~ 2.2mv; Solar cell short-circuit current raises with temperature and raises; The peak power of solar cell reduces with the rising of temperature (directly having influence on efficiency), namely temperature often raises 1 DEG C, the peak power rate of loss of solar cell is about 0.35 ~ 0.45%, such as: the silicon solar cell being operated in 20 DEG C, its output rating is than the high 17.5-22.5% being operated in 70 DEG C.Monolithic solar module is composed in series by 60 or 72 monomer solar cells usually.According to the result at Ningxia, China field survey, during summer, solar module back surface temperatures as high is to 70 DEG C, and solar cell working junction temperature now can reach 100 DEG C (nominal parameter is demarcated all under 25 DEG C of conditions).
Under silicon solar cell is operated in the higher situation of temperature, open circuit voltage declines to a great extent with the rising of temperature, causes the serious skew of charging working point simultaneously, easily makes system undercharge and damage; The output rating of silicon solar cell also declines to a great extent with the rising of temperature, causes solar module can not give full play to maximum performance.Existing assembly is by glass, EVA, cell piece, EVA, and backboard is lamination successively, then lamination.Not specific heat abstractor, existing silicon solar battery assembly does not have specific heat abstractor, the amount of heat absorbed in environment for use is out of doors difficult to scatter and disappear rapidly and accumulate, open circuit voltage is caused to decline to a great extent with the rising of temperature, cause the serious skew of charging working point simultaneously, easily make system undercharge and damage; The output rating of silicon solar cell also declines to a great extent with the rising of temperature, causes solar module can not give full play to maximum performance.
Back veneer material modification processing method main at present applies the heat-conducting layer of layer of metal micro mist composition (as zinc powder in back plate surface, aluminium powder etc.), this heat-conducting layer weathering resistance is very poor, easily corroded by the acid rain water smoke in climatope, and high expensive, be therefore badly in need of a kind of heat sink material solution of low cost.
In addition because back veneer material is macromolecule resin, its color mostly is shallow white, although while everybody makes great efforts to keep back veneer material insulating property, make great efforts to improve its capacity of heat transmission, but due to the restriction of organic resin itself, heat loss through conduction and the heat loss through radiation ability of backboard are still poor, effectively cannot dispel the heat, thus reduce the power generation performance of assembly under strong solar radiation.
Summary of the invention
The technical problem that weather resisteant is poor, cost is high of the metal guide thermosphere of existing reduction solar cell backboard temperature to be solved by this invention, and the preparation method of a kind of infrared heat radiation coating for photovoltaic component back plate and heat radiation photovoltaic component back plate is provided, this is a kind of lower cost solution, reduce the temperature of photovoltaic component back plate, thus improve the output rating of photovoltaic module, reduce the cost of electricity-generating of assembly.
A kind of infrared heat radiation coating for photovoltaic component back plate heat radiation of the present invention is made up of the raw material of following weight percent: carbon material 5% ~ 80%, binding agent 10% ~ 50%, solvent 10% ~ 45%, and described each component proportion sum is 100%; Described carbon material is carbon black, or carbon material is that carbon black and carbon propping material mix, and carbon propping material is a kind of or wherein several combination in Graphite Powder 99, Graphene and carbon nanotube;
The method utilizing the above-mentioned infrared heat radiation coating for photovoltaic component back plate heat radiation to prepare heat radiation photovoltaic component back plate is carried out according to the following steps:
One, to packaged photovoltaic module, or assembly work in-process, purge the region that clean back plate surface needs heat radiation;
Two, by carbon material be 5% ~ 80%, binding agent is 10% ~ 50%, solvent is 10% ~ 45%, described each component proportion sum is 100%, takes carbon material, binding agent and solvent, and mixing, stirs, obtain slurry; Wherein said carbon material is carbon black, or carbon material is that carbon black and carbon propping material mix, and carbon propping material is a kind of or wherein several combination in Graphite Powder 99, Graphene and carbon nanotube;
Three, step 2 is obtained the surface that slurry is evenly applied to the backboard after step one processes, coating thickness 5 ~ 200 μm;
Four, the assembly after step 3 process is placed 0.5 ~ 2h spontaneous curing at ambient temperature, or be placed in after baking oven is warming up to 40 ~ 80 DEG C, afterheat baking 0.5 ~ h is cured, and obtains heat radiation photovoltaic component back plate.
The heat radiation photovoltaic component back plate of prepared by the present invention be coated with infrared heat radiation coating, compared with the assembly of not this infrared heat radiation coating, time in working order, backboard medial temperature is low 3 ~ 4 DEG C, and the output rating of photovoltaic module is high by 1% ~ 1.8%, reduces the cost of photovoltaic generation.
The present invention compared with prior art, has following advantage:
(1) the infrared heat radiation coating that dispels the heat of the backboard for photovoltaic module of the present invention, can reduce the working temperature of photovoltaic module, thus improves the output rating of assembly, reduces photovoltaic generation cost;
(2) carbon material of the present invention's employing, price is low, and the cooling cost of backboard is reduced greatly, easy to operate, is conducive to enforcement in enormous quantities.
Embodiment
Embodiment one: a kind of infrared heat radiation coating for photovoltaic component back plate heat radiation of present embodiment is made up of the raw material of following weight percent: carbon material 5% ~ 80%, binding agent 10% ~ 50%, solvent 10% ~ 45%, described each component proportion sum is 100%; Described carbon material is carbon black, or carbon material is that carbon black and carbon propping material mix, and carbon propping material is a kind of or wherein several combination in Graphite Powder 99, Graphene and carbon nanotube.
Embodiment two: present embodiment and embodiment one are 200 ~ 2000 orders unlike described carbon black granularity; Other is identical with embodiment one.
Embodiment three: present embodiment and embodiment one or two are 200 ~ 2000 orders unlike the granularity of carbon propping material; Other is identical with embodiment one or two.
Embodiment four: one of present embodiment and embodiment one to three are epoxy resin or resol unlike described binding agent; Other is identical with one of embodiment one to three.
Embodiment five: present embodiment and embodiment one to one of be alcohol, acetone or water unlike described solvent; Other is identical with one of embodiment one to three.
Embodiment six: the method utilizing the infrared heat radiation coating for photovoltaic component back plate heat radiation of embodiment one to prepare heat radiation photovoltaic component back plate is carried out according to the following steps:
One, to packaged photovoltaic module, or assembly work in-process, purge the region that clean back plate surface needs heat radiation;
Two, by carbon material be 5% ~ 80%, binding agent is 10% ~ 50%, solvent is 10% ~ 45%, described each component proportion sum is 100%, takes carbon material, binding agent and solvent, and mixing, stirs, obtain slurry; Wherein said carbon material is carbon black, or carbon material is that carbon black and carbon propping material mix, and carbon propping material is a kind of or wherein several combination in Graphite Powder 99, Graphene and carbon nanotube;
Three, step 2 is obtained the surface that slurry is evenly applied to the backboard after step one processes, coating thickness 5 ~ 200 μm;
Four, the assembly after step 3 process is placed 0.5 ~ 2h spontaneous curing at ambient temperature, or be placed in after baking oven is warming up to 40 ~ 80 DEG C, afterheat baking 0.5 ~ h is cured, and obtains heat radiation photovoltaic component back plate.
Embodiment seven: present embodiment and embodiment six are 200 ~ 2000 orders unlike the granularity of the carbon black described in step 2; Other is identical with embodiment six.
Embodiment eight: present embodiment and embodiment six or seven are 200 ~ 2000 orders unlike the granularity of the carbon propping material described in step 2; Other is identical with embodiment six or seven.
Embodiment nine: one of present embodiment and embodiment six to eight are epoxy resin or resol unlike described binding agent; Other is identical with one of embodiment six to eight.
Embodiment ten: one of present embodiment and embodiment six to eight are alcohol, acetone or water unlike described solvent; Other is identical with one of embodiment six to eight.
Below in conjunction with embodiment, the invention will be further described.
Embodiment 1:
The method preparing heat radiation photovoltaic component back plate of the present embodiment, carry out according to the following steps:
One, to packaged photovoltaic module, the region that clean back plate surface needs heat radiation is purged; Back veneer material is polytetrafluoroethylene PTFE, and this material is thermoplastics;
Two, by carbon black 80%, the ratio that resol is 10%, acetone is 10% takes carbon black, resol and acetone, and mixing, stirs, obtain slurry; Wherein the granularity of carbon black is 2000 orders;
Three, step 2 is obtained the surface that slurry is evenly applied to the backboard after step one processes, coating thickness 200 μm;
Four, be placed on to be positioned in baking oven by the assembly after step 3 process and toast, after being warming up to 80 DEG C with the temperature rise rate of 60 ± 2 DEG C/h, afterheat baking 0.5h, solidifies completely, obtains heat radiation photovoltaic component back plate.
The present embodiment adopts carbon black to prepare heat-conducting layer, and carbon black is the infrared radiant material that coefficient of blackness is large, is coated on the backboard of module backside, when assembly front accepts to shine upon, after system temperature raises, its heat is come out to external irradiation by heat-conducting layer, thus reduces the temperature of system.The heat radiation photovoltaic component back plate of prepared by the present embodiment be coated with infrared heat radiation coating, compared with the assembly of not this infrared heat radiation coating, time in working order, backboard medial temperature is low 3 DEG C, and the output rating of photovoltaic module is high by 1.1%, reduces the cost of photovoltaic generation.
Embodiment 2
The method preparing heat radiation photovoltaic component back plate of the present embodiment, carry out according to the following steps:
One, to packaged photovoltaic module, the region that clean back plate surface needs heat radiation is purged; Back veneer material is PET, PET is a kind of not fluorine-containing line style saturated polyester resin, has environment friendly;
Two, by carbon black 5%, Graphite Powder 99 5%, the ratio that epoxy resin is 20%, alcohol is 70% takes carbon black, epoxy resin and alcohol, and mixing, stirs, obtain slurry; Wherein the granularity of carbon black is 2000 orders; The granularity of Graphite Powder 99 is 200 orders;
Three, step 2 is obtained the surface that slurry is evenly applied to the backboard after step one processes, coating thickness 200 μm;
Four, the assembly after step 3 process is placed 2h spontaneous curing at ambient temperature, obtain heat radiation photovoltaic component back plate.
The present embodiment adopts carbon black and Graphite Powder 99 to prepare heat-conducting layer, carbon black and Graphite Powder 99 are all the infrared radiant materials that coefficient of blackness is large, the blackness of carbon black is greater than Graphite Powder 99, the thermal conductivity coefficient of graphite is greater than carbon black, combinationally use, graphite makes the dispersed homogeneous degree of carbon black greatly improve, and forms best pipe radiating network, improves radiating effect.
The heat radiation photovoltaic component back plate of prepared by the present embodiment be coated with infrared heat radiation coating, compared with the assembly of not this infrared heat radiation coating, time in working order, backboard medial temperature is low 3 DEG C, and the output rating of photovoltaic module is high by 1.2%, reduces the cost of photovoltaic generation.
Embodiment 3
The method preparing heat radiation photovoltaic component back plate of the present embodiment, carry out according to the following steps:
One, to packaged photovoltaic module, the region that clean back plate surface needs heat radiation is purged; Back veneer material is that polyvinylidene difluoride (PVDF) PVDF, PVDF have good uvioresistant, weather-proof and ageing-resistant performance;
Two, by carbon black 36%, the ratio that Graphene 4%, aqueous epoxy resins are 40%, water is 20% takes carbon black, Graphene, aqueous epoxy resins and water, and mixing, stirs, obtain slurry; Wherein the granularity of carbon black is 2000 orders; The granularity of Graphene is 800 orders;
Three, step 2 is obtained the surface that slurry is evenly applied to the backboard after step one processes, coating thickness 100 μm;
Four, be placed on to be positioned in baking oven by the assembly after step 3 process and toast, after being warming up to 40 DEG C, afterheat baking 2h, solidifies completely, obtains heat radiation photovoltaic component back plate.
In this use embodiment, carbon black and Graphene is utilized to combine, form pipe radiating network, namely this pipe radiating network can carry out heat loss through radiation, cross conduction heat radiation can be carried out again, heat radiation evenly, while reducing backboard temperature, can also avoid the problem of the cracking that expands with heat and contract with cold caused because coating heat radiation is uneven.
The heat radiation photovoltaic component back plate of prepared by the present embodiment be coated with infrared heat radiation coating, compared with the assembly of not this infrared heat radiation coating, time in working order, backboard medial temperature is low 4 DEG C, and the output rating of photovoltaic module is high by 1.8%, reduces the cost of photovoltaic generation.
Embodiment 4
The method preparing heat radiation photovoltaic component back plate of the present embodiment, carry out according to the following steps:
One, to packaged photovoltaic module, the region that clean back plate surface needs heat radiation is purged; Back veneer material is polyvinylidene difluoride (PVDF) PVDF;
Two, by carbon black 47.5%, the ratio that carbon nanotube 2.5%, aqueous epoxy resins are 20%, water is 30% takes carbon black, carbon nanotube, aqueous epoxy resins and water, and mixing, stirs, obtain slurry; Wherein the granularity of carbon black is 2000 orders; The granularity of carbon nanotube is 800 orders;
Three, step 2 is obtained the surface that slurry is evenly applied to the backboard after step one processes, coating thickness 80 μm;
Four, be placed on to be positioned in baking oven by the assembly after step 3 process and toast, after being warming up to 80 DEG C, afterheat baking 0.5h, solidifies completely, obtains heat radiation photovoltaic component back plate.
The present embodiment utilizes carbon black and carbon nanotube to form pipe radiating network, namely this pipe radiating network can carry out heat loss through radiation, can carry out cross conduction heat radiation again, and heat radiation evenly, while reducing backboard temperature, the problem of the cracking that expands with heat and contract with cold caused because coating heat radiation is uneven can also be avoided.
The heat radiation photovoltaic component back plate of prepared by the present embodiment be coated with infrared heat radiation coating, compared with the assembly of not this infrared heat radiation coating, time in working order, backboard medial temperature is low 3.8 DEG C, and the output rating of photovoltaic module is high by 1.7%, reduces the cost of photovoltaic generation.
Embodiment 5
The method preparing heat radiation photovoltaic component back plate of the present embodiment, carry out according to the following steps:
One, to packaged photovoltaic module, the region that clean back plate surface needs heat radiation is purged; Back veneer material is polyvinylidene difluoride (PVDF) PVDF;
Two, by carbon black 27%, the ratio that Graphite Powder 99 27%, Graphene 3%, carbon nanotube 3%, aqueous epoxy resins are 20%, water is 20% takes carbon black, Graphite Powder 99, Graphene, carbon nanotube, aqueous epoxy resins and water, mixing, stirs, obtains slurry; Wherein the granularity of carbon black is 1000 orders; The granularity of Graphite Powder 99 is 1000 orders, and the granularity of Graphene, carbon nanotube is 800 orders;
Three, step 2 is obtained the surface that slurry is evenly applied to the backboard after step one processes, coating thickness 120 μm;
Four, the assembly after step 3 process is placed on is positioned over 1.5h in room temperature environment, obtain heat radiation photovoltaic component back plate.
The heat radiation photovoltaic component back plate of prepared by the present embodiment be coated with infrared heat radiation coating, compared with the assembly of not this infrared heat radiation coating, time in working order, backboard medial temperature is low 4.8 DEG C, and the output rating of photovoltaic module is high by 1.8%, reduces the cost of photovoltaic generation.
Claims (10)
1. the infrared heat radiation coating for photovoltaic component back plate heat radiation, it is characterized in that this heat radiation coating is made up of the raw material of following weight percent: carbon material 5% ~ 80%, binding agent 10% ~ 50%, solvent 10% ~ 45%, described each component proportion sum is 100%; Described carbon material is carbon black, or carbon material is that carbon black and carbon propping material mix, and carbon propping material is a kind of or wherein several combination in Graphite Powder 99, Graphene and carbon nanotube.
2. a kind of infrared heat radiation coating for photovoltaic component back plate heat radiation according to claim 1, is characterized in that carbon black granularity is 200 ~ 2000 orders.
3. a kind of infrared heat radiation coating for photovoltaic component back plate heat radiation according to claim 1 and 2, is characterized in that the granularity of carbon propping material is 200 ~ 2000 orders.
4. a kind of infrared heat radiation coating for photovoltaic component back plate heat radiation according to claim 1 and 2, is characterized in that described binding agent is epoxy resin or resol.
5. a kind of infrared heat radiation coating for photovoltaic component back plate heat radiation according to claim 1 and 2, is characterized in that described solvent is alcohol, acetone or water.
6. utilize the infrared heat radiation coating for photovoltaic component back plate heat radiation described in claim 1 to prepare the method for heat radiation photovoltaic component back plate, it is characterized in that the method is carried out according to the following steps:
One, to packaged photovoltaic module, or assembly work in-process, purge the region that clean back plate surface needs heat radiation;
Two, by carbon material be 5% ~ 80%, binding agent is 10% ~ 50%, solvent is 10% ~ 45%, described each component proportion sum is 100%, takes carbon material, binding agent and solvent, and mixing, stirs, obtain slurry; Wherein said carbon material is carbon black, or carbon material is that carbon black and carbon propping material mix, and carbon propping material is a kind of or wherein several combination in Graphite Powder 99, Graphene and carbon nanotube;
Three, step 2 is obtained the surface that slurry is evenly applied to the backboard after step one processes, coating thickness 5 ~ 200 μm;
Four, the assembly after step 3 process is placed 0.5 ~ 2h spontaneous curing at ambient temperature, or be placed in after baking oven is warming up to 40 ~ 80 DEG C, afterheat baking 0.5 ~ h is cured, and obtains heat radiation photovoltaic component back plate.
7. the method for heat radiation photovoltaic component back plate is prepared in utilization according to claim 6 for the infrared heat radiation coating that photovoltaic component back plate dispels the heat, and it is characterized in that the granularity of the carbon black described in step 2 is 200 ~ 2000 orders.
8. the utilization according to claim 6 or 7 prepares the method for heat radiation photovoltaic component back plate for the infrared heat radiation coating that photovoltaic component back plate dispels the heat, and it is characterized in that the granularity of the carbon propping material described in step 2 is 200 ~ 2000 orders.
9. the utilization according to claim 6 or 7 prepares the method for heat radiation photovoltaic component back plate for the infrared heat radiation coating that photovoltaic component back plate dispels the heat, and it is characterized in that described binding agent is epoxy resin or resol.
10. the utilization according to claim 6 or 7 prepares the method for heat radiation photovoltaic component back plate for the infrared heat radiation coating that photovoltaic component back plate dispels the heat, and it is characterized in that described solvent is alcohol, acetone or water.
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