CN104113192A - IGBT three-level power module - Google Patents
IGBT three-level power module Download PDFInfo
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- CN104113192A CN104113192A CN201410290882.XA CN201410290882A CN104113192A CN 104113192 A CN104113192 A CN 104113192A CN 201410290882 A CN201410290882 A CN 201410290882A CN 104113192 A CN104113192 A CN 104113192A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/70—Wind energy
- Y02E10/76—Power conversion electric or electronic aspects
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Abstract
The invention relates to an IGBT three-level power module that can be applied to a converter of a high-power wind generating set. The IGBT packaging mode used by the module is a crimping packaging mode; and the NPC three-level single-phase circuit topology is used. A bus support capacitor, an IGBT drive circuit, a bus discharge circuit, a direct-current power-taking circuit and the like are integrated inside the module. The whole module does not need the external power supply; and the power supply demand of the IGBT drive circuit can be satisfied in a self-sufficiency mode. Meanwhile, multiple protection measures including IGBT over-current protection, IGBT over-voltage protection, short-circuit detection protection, door trigger drive power supply detection protection, pulse width detection protection, and over-temperature protection and the like are configured in the module. And the module also provides temperature collection analog quantity for the set.
Description
Technical field
The present invention relates to a kind of IGBT tri-electrical level power module.
Background technology
Along with the progress of human society, the development of productivity, the contradiction between the mankind and nature is progressively aggravation also, and the energy progressively becomes one of subject matter of restriction social progress.The conventional energy resource using at present, taking coal, oil, natural gas as main, is non-renewable ore resource, along with passage of time will drain off.Therefore, the exploitation of regenerative resource are more and more paid attention in countries in the world.Regenerative resource comprises solar energy, wind energy, and biomass energy, water energy etc., all can continuous utilization.Wherein, solar energy and wind energy are as the representative of new forms of energy, and resource potential is large, and cleanliness without any pollution is more and more subject to the attention of countries in the world in recent years, and China clearly proposes using New Energy Industry as giving priority to object in 12 planning.Comparatively speaking, wind technology is that in generation of electricity by new energy technology, technology is the most ripe, one of generation mode of tool exploitation scale.In some developed country, wind-powered electricity generation has become a part indispensable in electrical network, and its energy output accounts for the 10-20% of national gross generation, and according to authority's prediction, to the year two thousand twenty, wind-powered electricity generation will become one of most important energy in the world.
And turn one's attention to domesticly, and the wind energy resources of China is very abundant, and the rough estimates of tool wind energy resources show, and on Chinese Continental, liftoff more than 10 meters wind energy gross reserves is about 4,300,000,000 kilowatts, can development capacity be about 2.5 hundred million kilowatts.At present, the built several gigawatt wind-powered electricity generations of China base, develops very rapidly, and within 2009, newly-increased installed capacity of wind-driven power is about 1,303 ten thousand kilowatts, occupies the first in the world.And along with the development of wind generating technology, wind turbine pool-size increases just rapidly, the wind power system of operation is all MW class system mostly at present in the world, and all commercializations, and domestic main flow wind-powered electricity generation unit also just progressively shifts to MW class unit.From following development trend, wind-powered electricity generation capacity of power unit will be to development in more large-scale.Wind-powered electricity generation capacity of power unit is generally 1.5 megawatts to 3 megawatts at present, and the grid side voltage of wind-powered electricity generation unit is 690V.If continue to increase the single-machine capacity of wind-powered electricity generation unit by the observation to wind-power market, need the grid side voltage of wind-powered electricity generation unit to be increased to 3.3kV.And the semiconductor device that in current wind-powered electricity generation unit, current transformer uses is difficult to reach this electric pressure.So need to seek a kind of new circuit topology addresses this problem.
1981, the Japan Chang Gang Nabae of university etc. proposes diode neutral-point-clamped (neutral-point-clamped, NPC) since type three level structures, three-level inverter is widely applied in mesohigh frequency control, active electric filter device, power system reactive power compensation and field of wind power generation.Compared with traditional two level structures, three level structure tools have the following advantages: the DC voltage that 1) only bears half on each power tube; 2), under identical switching frequency, output voltage, current harmonic content are little; 3) in each power tube turn-on and turn-off process, power tube is only born the DC voltage of half, and therefore devices switch loss is low.
For the structure of three electrical level power module, main direction of studying is to make to improve the multiple performances such as heat dispersion, protective value, stability in use, and reduces volume and reduce cost.
Summary of the invention
The object of this invention is to provide a kind of three electrical level power module, in order to solve, existing three electrical level power module volumes are large, the not good problem of heat dispersion.
For achieving the above object, the solution of the present invention comprises:
A kind of IGBT tri-electrical level power module, it is the upper and lower bridge arm part of a phase, comprise the first switching tube (T1), second switch pipe (T2), the 3rd switching tube (T3), the 4th switching tube (T4), the first diode (D1), the second diode (D2), the first resistance (R1), the second resistance (R2), the first electric capacity (C1), the second electric capacity (C2); IGBT tri-electrical level power module comprise casing (1), in casing, side by side interval is fixedly installed the first switching tube (T1), second switch pipe (T2), the first diode (D1), the second diode (D2) successively, and the 3rd switching tube (T3), the 4th switching tube (T4); Between described the first diode (D1), the second diode (D2), be provided with central point and connect copper bar (10); Between second switch pipe (T2) and the first diode (D1), be provided with the first insulating part (3), between the 3rd switching tube (T3) and the second diode (D2), be equipped with the second insulating part (4); Between the first switching tube (T1), second switch pipe (T2), the first insulating part (3), the first diode (D1), be equipped with heating panel; Between the second diode (D2), the second insulating part (4), the 3rd switching tube (T3), the 4th switching tube (T4), be also provided with heating panel; The first switching tube (T1) and cabinet exterior, be also provided with heating panel between the 4th switching tube (T4) and cabinet exterior.
Casing (1) is provided with cover plate (13), and the drive circuit module that each switching tube is corresponding (5,6,7,8) and direct current electricity-fetching module (9) are installed on cover plate (13); Described drive circuit module is near the heating panel position of corresponding switching tube.
The first resistance (R1), the second resistance (R2), the first electric capacity (C1), the second electric capacity (C2) are positioned at casing outside, are set up in parallel, and connect copper bar (10) connection by central point; The first resistance R 1, the second resistance R 2 lay respectively at the first capacitor C 1, the second capacitor C 2 belows.
Copper bar (11) short circuit is arranged at the radiator bottom of installing between the radiator of installing between the first diode (D1) and the first insulating part (3) and the first switching tube (T1) and second switch pipe (T2); Copper bar (11) short circuit is arranged at the water-filled radiator bottom of installing between the water-filled radiator of installing between the second diode (D2) and the second insulating part (4) and the 3rd switching tube (T3) and the 4th switching tube (T4).
Described the first switching tube (T1), second switch pipe (T2), the 3rd switching tube (T3), the 4th switching tube (T4) are compression joint type IGBT; The first diode (D1), the second diode (D2) are compression joint type diode.
Described heating panel is water-cooling plate.
Object of the present invention provides a kind of single-phase IBGT three phase power module, can be adapted to wind power generation requirement, ensures under identical switching frequency simultaneously, and output voltage, current harmonic content are little, reduces electric network pollution.The present invention adopts compression joint type IGBT and compression joint type diode, according to being used in conjunction with of specific built-up sequence and water-filled radiator, insulating part, becomes a complete NPC tri-level single circuitry phase topology by compression joint technique.Inside modules is integrated with bus Support Capacitor, IGBT drive circuit, bus bleed off circuit, direct current power-supply circuit simultaneously, and module is completed, and reach object simple, easy to maintenance is installed, its compact conformation, rationally distributed, save space and perfect heat-dissipating.
Drive circuit module and direct current electricity-fetching module are all arranged on casing outside, conveniently carry out dismounting.Radiator adopts water-filled radiator, and drive circuit module is installed on the water-filled radiator top that IGBT closes on.
Brief description of the drawings
Fig. 1 is the IGBT tri-electrical level power module electrical schematic diagrams of the embodiment of the present invention;
Fig. 2 is the IGBT tri-electrical level power module front views (removing casing front panel) of the embodiment of the present invention;
Fig. 3 is the vertical view (removing box cover) of Fig. 2;
1 casing, 2 heating panels, 3 first insulating parts, 4 second insulating parts, 5,6,7,8 drive circuit modules, 9 direct current electricity-fetching modules, 10 center tie points connect copper bar, and 11 first connect copper bar, and 12 second connect copper bar, 13 cover plates.
Embodiment
Below in conjunction with accompanying drawing, the present invention will be further described in detail.
A kind of IGBT tri-electrical level power module as shown in Figure 1, for single-phase upper and lower bridge arm part, comprise the first switch transistor T 1, second switch pipe T2, the 3rd switch transistor T 3, the 4th switch transistor T 4 (T1, T2, T3, T4 are IGBT), the first diode D1, the second diode D2, the first resistance R 1, the second resistance R 2, the first capacitor C 1, the second capacitor C 2; T1, T2, D1, R1, C1 belong to brachium pontis, and T3, T4, D2, R2, C2 belong to lower brachium pontis.T1, T2 are respectively used to connect DC bus, and T2, T3 tie point are used for connecting AC.The first resistance R 1, the second resistance R 2 form bleed off loop.
IGBT tri-electrical level power module comprise casing 1, and in casing, side by side interval is fixedly installed the first switch transistor T 1, second switch pipe T2, the first diode D1, the second diode D2 successively, and the 3rd switch transistor T 3, the 4th switch transistor T 4; Between described the first diode D1, the second diode D2, be provided with central point and connect copper bar 10; Between second switch pipe T2 and the first diode D1, be provided with between the first insulating part 3, the three switch transistor T 3 and the second diode D2 and be equipped with the second insulating part 4; Between the first switch transistor T 1, second switch pipe T2, the first insulating part 3, the first diode D1, be equipped with heating panel; Between the second diode D2, the second insulating part 4, the 3rd switch transistor T 3, the 4th switch transistor T 4, be also provided with heating panel; The first switch transistor T 1 and cabinet exterior, is also provided with heating panel (only having identified a heating panel 2 in figure) between the 4th switch transistor T 4 and cabinet exterior.
Drive circuit module 5,6,7,8 and direct current electricity-fetching module are installed on the cover plate of casing 1.
The first resistance R 1, the second resistance R 2, the first capacitor C 1, the second capacitor C 2 are positioned at casing outside, and C1, C2 are set up in parallel, and connect copper bar 10 connect by central point.The first resistance R 1, the second resistance R 2 lay respectively at the first capacitor C 1, the second capacitor C 2 belows.
Concrete, as shown in Figure 2 and Figure 3, above-mentioned switching tube, diode are compression joint type structure to the IGBT tri-electrical level power module structures of the present embodiment; Capacitor C 1, C2 are metal thin film capacitor.As Fig. 2, the crimping order of compression joint type IGBT and compression joint type diode is T1, T2, D1, D2, T3, T4.Heating panel adopts water-filled radiator.Between T1 left side and crimp assemblies, a water-filled radiator is installed, a water-filled radiator is installed between T1 and T2, a water-filled radiator is installed between T2 and insulating part 1, a water-filled radiator is installed between D1 and insulating part 1, between D1 and D2, mounting center point is connected copper bar, and a water-filled radiator is installed between D2 and insulating part 2, a water-filled radiator of installation between T3 and insulating part 2, a water-filled radiator is installed between T3 and T4, a water-filled radiator is installed between T4 right side and crimp assemblies.Copper bar 11 short circuits are arranged at the water-filled radiator bottom of installing between the water-filled radiator of installation and T1 and T2 between D1 and the first insulating part 3.Copper bar 12 short circuits are arranged at the water-filled radiator bottom of installing between the water-filled radiator of installation and T3 and T4 between D2 and the second insulating part 4.
The installation site in IGBT drive circuit module and direct current power taking loop.Between the gate pole of the gate pole of IGBT drive circuit, collector electrode, emitter and IGBT, collector electrode, emitter, adopt coaxial line to be connected, and line has magnet ring outward, prevent the generation of electromagnetism misoperation.While drive circuit module is integrated IGBT overcurrent protection, IGBT overvoltage protection, short-circuit detection protection, door triggering driving power detection protection, pulse duration detection protection.
Direct current electricity-fetching module is powered by the both positive and negative polarity of bus Support Capacitor, and when bus Support Capacitor voltage reaches 300V when above, direct current power taking power module starts, and is that provide+24V of loop output is provided.
Direct current power taking loop input and positive and negative busbar are that between positive pole and the C2 of C1, negative pole is connected.Output is connected with the power input of the drive circuit module of each water-filled radiator top, is provide+24V of drive circuit module power supply.In direct current power taking installation module, draw excess temperature signal and temperature survey analog signals simultaneously.Excess temperature signal serviceability temperature relay with the capable insulating part of U be fixed on potsherd potsherd and water-filled radiator contact-making surface heat-conducting silicone grease smoothen rear with fastened by screw on water-filled radiator.Temperature survey analog signals uses the thermocouple capable insulating part of U to be fixed on potsherd and water-filled radiator contact-making surface heat-conducting silicone grease on potsherd and smoothens rear use fastened by screw on water-filled radiator.
Temperature acquisition uses thermistor, overheat protector serviceability temperature relay, and both are installed in cooled plate.So there is higher voltage in water-filled radiator because the water-filled radiator of compression joint type IGBT need to conduct electricity, thermistor and temperature relay all can not be directly installed on water-filled radiator top for this reason, and intermediate demand increases between potsherd and thermistor and temperature relay and potsherd needs U-shaped fixed mount to be fixed.
Fig. 3 is that three electrical level power module of compression joint type IGBT are overlooked layout plan, and this figure indicates the position of metal thin film capacitor C1, C2.Anodal short circuit between the negative pole of C1 and C2, the mid point of its short circuit is connected copper bar 10 with the central point in crimping module and connects.The water-filled radiator of installing between the positive pole of C1 and T1 left side and crimp assemblies is connected.The water-filled radiator of installing between the negative pole of C2 and T4 right side and crimp assemblies is connected.
Metal thin film capacitor C1, C2 below bleed off loop R1, R2 are installed.R1 one end is connected with DC bus is anodal, and one end short circuit of the R1 other end and R2 is also connected to electric capacity central point.The other end of R2 is connected with DC bus negative pole.
Bus Support Capacitor of the present invention adopts two metal thin film capacitors, and both positive and negative polarity is drawn in two capacitances in series uses simultaneously and capacitances in series central point uses for switch element.The water-cooled thick-film resistor of the positive and negative connection high value of electric capacity simultaneously, forms bus bleed off loop, makes module in the time not operating, and bleed off capacitance voltage, guarantees maintenance safe as early as possible.Capacitances in series central point, except being connected with switch element, also needs together with module whole grounding connection, reduces the suspended voltage over the ground of module whole.
Power model externally provides the analog quantity transmission of overheat protector interface and temperature acquisition.Module whole is by conducting and the shutoff of 4 road optical fiber control IGBT; module externally provides 4 road optical fiber feedback signals simultaneously; for judging whether IGBT breaks down in running, the fault of being fed back by optical fiber has IGBT overcurrent protection, IGBT overvoltage protection, short-circuit detection protection, door to trigger driving power detection protection, pulse duration detects protection.
More than provided concrete execution mode, but the present invention is not limited to described execution mode.Basic ideas of the present invention are above-mentioned basic scheme, and for those of ordinary skill in the art, according to instruction of the present invention, model, formula, the parameter of designing various distortion do not need to spend creative work.Variation, amendment, replacement and the modification of without departing from the principles and spirit of the present invention execution mode being carried out still fall within the scope of protection of the present invention.
Claims (6)
1. IGBT tri-electrical level power module, it is the upper and lower bridge arm part of a phase, comprise the first switching tube (T1), second switch pipe (T2), the 3rd switching tube (T3), the 4th switching tube (T4), the first diode (D1), the second diode (D2), the first resistance (R1), the second resistance (R2), the first electric capacity (C1), the second electric capacity (C2); It is characterized in that:
IGBT tri-electrical level power module comprise casing (1), in casing, side by side interval is fixedly installed the first switching tube (T1), second switch pipe (T2), the first diode (D1), the second diode (D2) successively, and the 3rd switching tube (T3), the 4th switching tube (T4); Between described the first diode (D1), the second diode (D2), be provided with central point and connect copper bar (10); Between second switch pipe (T2) and the first diode (D1), be provided with the first insulating part (3), between the 3rd switching tube (T3) and the second diode (D2), be equipped with the second insulating part (4); Between the first switching tube (T1), second switch pipe (T2), the first insulating part (3), the first diode (D1), be equipped with heating panel; Between the second diode (D2), the second insulating part (4), the 3rd switching tube (T3), the 4th switching tube (T4), be also provided with heating panel; The first switching tube (T1) and cabinet exterior, be also provided with heating panel between the 4th switching tube (T4) and cabinet exterior.
2. a kind of IGBT tri-electrical level power module according to claim 1, it is characterized in that, casing (1) is provided with cover plate (13), and the drive circuit module that each switching tube is corresponding (5,6,7,8) and direct current electricity-fetching module (9) are installed on cover plate (13); Described drive circuit module is near the heating panel position of corresponding switching tube.
3. a kind of IGBT tri-electrical level power module according to claim 2, it is characterized in that, the first resistance (R1), the second resistance (R2), the first electric capacity (C1), the second electric capacity (C2) are positioned at casing outside, be set up in parallel, and connect copper bar (10) connection by central point; The first resistance R 1, the second resistance R 2 lay respectively at the first capacitor C 1, the second capacitor C 2 belows.
4. a kind of IGBT tri-electrical level power module according to claim 3, it is characterized in that, the first copper bar (11) short circuit is arranged at the heating panel bottom of installing between the radiator of installing between the first diode (D1) and the first insulating part (3) and the first switching tube (T1) and second switch pipe (T2); The second copper bar (12) short circuit is arranged at the heating panel bottom of installing between the heating panel of installing between the second diode (D2) and the second insulating part (4) and the 3rd switching tube (T3) and the 4th switching tube (T4).
5. a kind of IGBT tri-electrical level power module according to claim 1, it is characterized in that, described the first switching tube (T1), second switch pipe (T2), the 3rd switching tube (T3), the 4th switching tube (T4) are compression joint type IGBT; The first diode (D1), the second diode (D2) are compression joint type diode.
6. a kind of IGBT tri-electrical level power module according to claim 1, is characterized in that, described heating panel is water-cooling plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410290882.XA CN104113192A (en) | 2014-06-24 | 2014-06-24 | IGBT three-level power module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410290882.XA CN104113192A (en) | 2014-06-24 | 2014-06-24 | IGBT three-level power module |
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| CN104113192A true CN104113192A (en) | 2014-10-22 |
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Application publication date: 20141022 |