CN103683936A - Two-way digital DC-DC convertor with wide load range - Google Patents
Two-way digital DC-DC convertor with wide load range Download PDFInfo
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- CN103683936A CN103683936A CN201310705358.XA CN201310705358A CN103683936A CN 103683936 A CN103683936 A CN 103683936A CN 201310705358 A CN201310705358 A CN 201310705358A CN 103683936 A CN103683936 A CN 103683936A
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Abstract
The invention discloses a two-way digital DC-DC convertor with a wide load range. The two-way digital DC-DC convertor comprises a high-voltage end, a low-voltage end, a dsPIC30F single chip microcomputer and a transformer. The output end of the dsPIC30F single chip microcomputer is connected with a drive circuit which is provided with a plurality of PWM output ends; the high-voltage end is connected with a high-voltage part rectifying circuit, the low-voltage end is connected with a low-voltage part rectifying circuit, and the transformer is arranged between the high-voltage part rectifying circuit and the low-voltage part rectifying circuit; the output end of the drive circuit is respectively connected to the control end of the high-voltage part rectifying circuit and the control end of the low-voltage part rectifying circuit. Dead time of phase-shifted full-bridge control is adjusted according to the magnitude of loads, meanwhile different rectification modes are selected according to the magnitude of the loads, and therefore the convertor has high efficiency within the wide load range. The convertor is provided with an active clamping circuit preventing vice edge parasitic oscillation, so voltage overshoot can be effectively prevented. Accordingly, the two-way convertor is especially suitable for occasions having a high requirement for efficiency of convertors and a requirement for large changes of the loads.
Description
Technical field
The invention belongs to converters technical field, be specifically related to a kind of bi-directional digital DC-DC converter of wide loading range.
Background technology
In fields such as Aero-Space, solar power generation, wind power generation, electric automobile, uninterrupted power supplys, generally adopt bidirectional DC-DC converter, bidirectional DC-DC converter can be realized the two-way flow of energy, input/output voltage polarity remains unchanged, but the I/O sense of current can change, high-pressure side can be given low-pressure end transmitted power, and in the time of necessary, low-pressure end also can be given high-pressure side energy feedback.
In the larger application scenario of load change, load changes always in 3%-100% scope, existing converter efficiency when load is larger is generally higher, but when load is lower, efficiency is lower, and the parasitism concussion meeting simultaneously existing in circuit causes and has a strong impact on circuit working.
Simultaneously existing bidirectional DC-DC converter adopts analog element, analog control mode mostly, and advantage is that response is fast, but Shortcomings in many aspects.Such as switching loss is excessive, cause the problems such as transducer effciency is low, simultaneously, traditional simulation two-way DC converter needs a large amount of discrete component and circuit board, the components and parts that use are many, and the cost bringing is thus also higher, and between analogue device, connect complicated, bring larger difficulty to fault detect and maintenance, and simulation control is subject to environment (as noise, ambient temperature, humidity, vibrations etc.) impact, less stable.
Summary of the invention
The object of the invention is to solve the defects such as in prior art, bidirectional DC-DC converter loading range is narrow, cost is high, efficiency is low, a kind of bi-directional digital DC-DC converter of wide loading range has been proposed, the Dead Time that this bi-directional digital DC-DC converter can regulate phase-shifting full-bridge to control according to load, according to load, select different rectification patterns, thereby make converter in wider loading range, all there is very high efficiency simultaneously.
To achieve these goals, the technical solution adopted in the present invention is: comprise high-pressure side, low-pressure end, dsPIC30F single-chip microcomputer and transformer; On dsPIC30F single-chip microcomputer input, be connected with for gathering the electric current of high-pressure side and low-pressure end, the sample circuit of voltage data; The output of dsPIC30F single-chip microcomputer is connected with the drive circuit with some PWM outputs; On high-pressure side, be connected with high-pressure section rectification circuit, on low-pressure end, be connected with low-pressure section rectification circuit, and transformer is arranged between high-pressure section rectification circuit and low-pressure section rectification circuit; The output of drive circuit is connected respectively on the control end of high-pressure section rectification circuit and low-pressure section finishing circuit.
On described low-pressure end, be provided with the active clamp circuit that prevents the parasitic concussion of secondary.
Described transformer is the transformer of a former limit winding and two secondary windings, and its Central Plains becomes winding and is connected with high-pressure section rectification circuit, and two secondary windings are connected with low-pressure section rectification circuit.
Described high-pressure section rectification circuit comprises the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the first diode, the second diode, the 3rd diode, the 4th diode, the first electric capacity, the second electric capacity, the 3rd electric capacity, the 4th electric capacity, high-pressure side electrochemical capacitor and former limit leakage inductance; Wherein, the drain electrode of the drain electrode of the first metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor is connected with high-pressure side is anodal, the source electrode of the first metal-oxide-semiconductor is connected with the drain electrode of the second metal-oxide-semiconductor, and the source electrode of the 3rd metal-oxide-semiconductor is connected with the drain electrode of the 4th metal-oxide-semiconductor, and the source electrode of the source electrode of the second metal-oxide-semiconductor and the 4th metal-oxide-semiconductor is ground connection respectively; The positive pole of high-pressure side electrochemical capacitor is connected with high-pressure side is anodal, minus earth;
The grid of the first metal-oxide-semiconductor is connected with a PWM output of drive circuit; The grid of the second metal-oxide-semiconductor is connected with the 2nd PWM output of drive circuit; The grid of the 3rd metal-oxide-semiconductor is connected with the 3rd PWM output of drive circuit; The grid of the 4th metal-oxide-semiconductor is connected with the 4th PWM output of drive circuit;
The Same Name of Ends of transformer primary side winding is connected with the source electrode of the first metal-oxide-semiconductor by former limit leakage inductance, and different name end is connected with the drain electrode of the 4th metal-oxide-semiconductor;
The negative electrode of the first diode is connected with the drain electrode of the first metal-oxide-semiconductor, and the anode of the first diode is connected with the source electrode of the first metal-oxide-semiconductor, and the first Capacitance parallel connection is at the two ends of the first diode; The negative electrode of the second diode is connected with the drain electrode of the second metal-oxide-semiconductor, and the anode of the second diode is connected with the source electrode of the second metal-oxide-semiconductor, and the second Capacitance parallel connection is at the two ends of the second diode; The negative electrode of the 3rd diode is connected with the drain electrode of the 3rd metal-oxide-semiconductor, and the anode of the 3rd diode is connected with the source electrode of the 3rd metal-oxide-semiconductor, and the 3rd Capacitance parallel connection is at the two ends of the 3rd diode; The negative electrode of the 4th diode is connected with the drain electrode of the 4th metal-oxide-semiconductor, and the anode of the 4th diode is connected with the source electrode of the 4th metal-oxide-semiconductor, and the 4th Capacitance parallel connection is at the two ends of the 4th diode;
Described low-pressure section rectification circuit comprises the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 5th diode, the 6th diode, low-pressure end electrochemical capacitor and filtering leakage inductance; Wherein, the source ground of the source electrode of the 5th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor; The negative electrode of the 5th diode is connected with the drain electrode of the 5th metal-oxide-semiconductor, and anode is connected with the source electrode of the 5th metal-oxide-semiconductor; The negative electrode of the 6th diode is connected with the drain electrode of the 6th metal-oxide-semiconductor, and anode is connected with the source electrode of the 6th metal-oxide-semiconductor; The grid of the 5th metal-oxide-semiconductor is connected on the 5th PWM output of drive circuit, and the grid of the 6th metal-oxide-semiconductor is connected on the 6th PWM output of drive circuit; The Same Name of Ends of the first secondary winding of transformer is connected with the drain electrode of the 6th metal-oxide-semiconductor, and the different name end of the first secondary winding is connected with the Same Name of Ends of the second secondary winding, and the different name end of the second secondary winding is connected with the drain electrode of the 5th metal-oxide-semiconductor; One end of filtering leakage inductance is connected on the tie point of the different name end of the first secondary winding and the Same Name of Ends of the second secondary winding, and the other end is connected with the positive pole of low-pressure end; The positive pole of low-pressure end electrochemical capacitor is connected with the positive pole of low-pressure end, minus earth.
Described active clamp circuit comprises the 7th metal-oxide-semiconductor, the 7th diode and the 7th electric capacity; Wherein, the drain electrode of the 7th metal-oxide-semiconductor is connected with the tie point of the Same Name of Ends of the second secondary winding with the different name end of the first secondary winding, and the source electrode of the 7th metal-oxide-semiconductor is connected with one end of the 7th electric capacity, the other end ground connection of the 7th electric capacity; The grid of the 7th metal-oxide-semiconductor is connected on the 7th PWM output of drive circuit; The negative electrode of the 7th diode is connected with the drain electrode of the 7th metal-oxide-semiconductor, and anode is connected with the source electrode of the 7th metal-oxide-semiconductor.
Described sample circuit comprises high-pressure side voltage sampling circuit, high-pressure side current sampling circuit, low-pressure end voltage sampling circuit and low-pressure end current sampling circuit; Wherein, the input of high-pressure side voltage sampling circuit is connected with high-pressure side is anodal, and output is connected with first via mould/number end of dsPIC30F single-chip microcomputer; The input of high-pressure side current sampling circuit is connected on the node between high-pressure side positive pole and the drain electrode of the first metal-oxide-semiconductor; The input of low-pressure end voltage sampling circuit is connected with low-pressure end is anodal, and output is connected with the second road mould/number end of dsPIC30F single-chip microcomputer; The input of low-pressure end current sampling circuit is connected on the node between the 6th metal-oxide-semiconductor (Q6) and ground.
Compared with prior art, the present invention has following beneficial effect:
The present invention is by the rectification circuit between dsPIC30F Single-chip Controlling high-pressure side and low-pressure end, have that loading range is wide, efficiency advantages of higher, its loading range can reach 3%～100%, loads on 20% efficiency when following and reaches 80%, and load 20% reaches more than 85% when above; Cost of the present invention is low, the digital control a large amount of analogue device that reduced of sampling; Circuit reliability of the present invention is high, and the voltage overshoot in circuit is controlled, and guarantees circuit reliably working; When circuit generation overcurrent, overvoltage, when under-voltage, can realize the protection to circuit by lockout switch pipe.
Further, the present invention is provided with the active clamp circuit that prevents the parasitic concussion of secondary, can effectively prevent voltage overshoot.Meanwhile, this high performance dsPIC30F detects and controls circuit, by inside programming, can realize complicated algorithm, during fault, also can protect circuit.
Accompanying drawing explanation
Fig. 1 is circuit diagram of the present invention;
Fig. 2 is the oscillogram of boost mode circuit working of the present invention.
Wherein, T1 is transformer; C1 is the first electric capacity; C2 is the second electric capacity; C3 is three electric capacity; C4 is the 4th electric capacity; Cb is high-pressure side electrochemical capacitor; C6 is low-pressure end electrochemical capacitor; C7 is the 7th electric capacity; D1 is the first diode; D2 is the second diode; D3 is the 3rd diode; D4 is the 4th diode; D5 is the 5th diode; D6 is the 6th diode; D7 is the 7th diode; Q1 is the first metal-oxide-semiconductor; Q2 is the second metal-oxide-semiconductor; Q3 is the 3rd metal-oxide-semiconductor; Q4 is the 4th metal-oxide-semiconductor; Q5 is the 5th metal-oxide-semiconductor; Q6 is the 6th metal-oxide-semiconductor; Q7 is the 7th metal-oxide-semiconductor.
Embodiment
Below in conjunction with accompanying drawing, to of the present invention, be described in further detail:
Referring to Fig. 1, the present invention includes high-pressure side, low-pressure end, dsPIC30F single-chip microcomputer and transformer T1; On dsPIC30F single-chip microcomputer input, be connected with for gathering the electric current of high-pressure side and low-pressure end, the sample circuit of voltage data; The output of dsPIC30F single-chip microcomputer is connected with the drive circuit with some PWM outputs; On high-pressure side, be connected with high-pressure section rectification circuit, on low-pressure end, be connected with low-pressure section rectification circuit, and transformer T1 is arranged between high-pressure section rectification circuit and low-pressure section rectification circuit, on low-pressure end, be also provided with the active clamp circuit that prevents the parasitic concussion of secondary; Transformer T1 is the transformer T1 of a former limit winding and two secondary windings, and its Central Plains becomes winding and is connected with high-pressure section rectification circuit, and two secondary windings are connected with low-pressure section rectification circuit; The output of drive circuit is connected respectively on the control end of high-pressure section rectification circuit and low-pressure section finishing circuit.
High-pressure section rectification circuit comprises the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4, the first diode D1, the second diode D2, the 3rd diode D3, the 4th diode D4, the first capacitor C 1, the second capacitor C 2, the 3rd capacitor C 3, the 4th capacitor C 4, high-pressure side electrochemical capacitor Cb and former limit leakage inductance Lr; Wherein, the drain electrode of the drain electrode of the first metal-oxide-semiconductor Q1 and the 3rd metal-oxide-semiconductor Q3 is connected with high-pressure side is anodal, the source electrode of the first metal-oxide-semiconductor Q1 is connected with the drain electrode of the second metal-oxide-semiconductor Q2, the source electrode of the 3rd metal-oxide-semiconductor Q3 is connected with the drain electrode of the 4th metal-oxide-semiconductor Q4, and the source electrode of the source electrode of the second metal-oxide-semiconductor Q2 and the 4th metal-oxide-semiconductor Q4 is ground connection respectively; The positive pole of high-pressure side electrochemical capacitor Cb is connected with high-pressure side is anodal, minus earth; The grid of the first metal-oxide-semiconductor Q1 is connected with a PWM output of drive circuit; The grid of the second metal-oxide-semiconductor Q2 is connected with the 2nd PWM output of drive circuit; The grid of the 3rd metal-oxide-semiconductor Q3 is connected with the 3rd PWM output of drive circuit; The grid of the 4th metal-oxide-semiconductor Q4 is connected with the 4th PWM output of drive circuit; The Same Name of Ends of the former limit of transformer T1 winding is connected with the source electrode of the first metal-oxide-semiconductor Q1 by former limit leakage inductance Lr, and different name end is connected with the drain electrode of the 4th metal-oxide-semiconductor Q4; The negative electrode of the first diode D1 is connected with the drain electrode of the first metal-oxide-semiconductor Q1, and the anode of the first diode D1 is connected with the source electrode of the first metal-oxide-semiconductor Q1, and the first capacitor C 1 is connected in parallel on the two ends of the first diode D1; The negative electrode of the second diode D2 is connected with the drain electrode of the second metal-oxide-semiconductor Q2, and the anode of the second diode D2 is connected with the source electrode of the second metal-oxide-semiconductor Q2, and the second capacitor C 2 is connected in parallel on the two ends of the second diode D2; The negative electrode of the 3rd diode D3 is connected with the drain electrode of the 3rd metal-oxide-semiconductor Q3, and the anode of the 3rd diode D3 is connected with the source electrode of the 3rd metal-oxide-semiconductor Q3, and the 3rd capacitor C 3 is connected in parallel on the two ends of the 3rd diode D3; The negative electrode of the 4th diode D4 is connected with the drain electrode of the 4th metal-oxide-semiconductor Q4, and the anode of the 4th diode D4 is connected with the source electrode of the 4th metal-oxide-semiconductor Q4, and the 4th capacitor C 4 is connected in parallel on the two ends of the 4th diode D4;
Low-pressure section rectification circuit comprises the 5th metal-oxide-semiconductor Q5, the 6th metal-oxide-semiconductor Q6, the 5th diode D5, the 6th diode D6, low-pressure end electrochemical capacitor C6 and filtering leakage inductance L; Wherein, the source ground of the source electrode of the 5th metal-oxide-semiconductor Q5 and the 6th metal-oxide-semiconductor Q6; The negative electrode of the 5th diode D5 is connected with the drain electrode of the 5th metal-oxide-semiconductor Q5, and anode is connected with the source electrode of the 5th metal-oxide-semiconductor Q5; The negative electrode of the 6th diode D6 is connected with the drain electrode of the 6th metal-oxide-semiconductor Q6, and anode is connected with the source electrode of the 6th metal-oxide-semiconductor Q6; The grid of the 5th metal-oxide-semiconductor Q5 is connected on the 5th PWM output of drive circuit, and the grid of the 6th metal-oxide-semiconductor Q6 is connected on the 6th PWM output of drive circuit; The Same Name of Ends of the first secondary winding of transformer T1 is connected with the drain electrode of the 6th metal-oxide-semiconductor Q6, and the different name end of the first secondary winding is connected with the Same Name of Ends of the second secondary winding, and the different name end of the second secondary winding is connected with the drain electrode of the 5th metal-oxide-semiconductor Q5; One end of filtering leakage inductance L is connected on the tie point of the different name end of the first secondary winding and the Same Name of Ends of the second secondary winding, and the other end is connected with the positive pole of low-pressure end; The positive pole of low-pressure end electrochemical capacitor C6 is connected with the positive pole of low-pressure end, minus earth.
Active clamp circuit comprises the 7th metal-oxide-semiconductor Q7, the 7th diode D7 and the 7th capacitor C 7; Wherein, the drain electrode of the 7th metal-oxide-semiconductor Q7 is connected with the tie point of the Same Name of Ends of the second secondary winding with the different name end of the first secondary winding, and the source electrode of the 7th metal-oxide-semiconductor Q7 is connected with one end of the 7th capacitor C 7, the other end ground connection of the 7th capacitor C 7; The grid of the 7th metal-oxide-semiconductor Q7 is connected on the 7th PWM output of drive circuit; The negative electrode of the 7th diode D7 is connected with the drain electrode of the 7th metal-oxide-semiconductor Q7, and anode is connected with the source electrode of the 7th metal-oxide-semiconductor Q7.
Sample circuit comprises high-pressure side voltage sampling circuit, high-pressure side current sampling circuit, low-pressure end voltage sampling circuit and low-pressure end current sampling circuit; Wherein, the input of high-pressure side voltage sampling circuit is connected with high-pressure side is anodal, and output is connected with first via mould/number end of dsPIC30F single-chip microcomputer; The input of high-pressure side current sampling circuit is connected on the node between high-pressure side positive pole and the drain electrode of the first metal-oxide-semiconductor; The input of low-pressure end voltage sampling circuit is connected with low-pressure end is anodal, and output is connected with the second road mould/number end of dsPIC30F single-chip microcomputer; The input of low-pressure end current sampling circuit is connected on the node between the 6th metal-oxide-semiconductor Q6 and ground.
The bi-directional digital DC-DC converter of a kind of wide loading range of the present invention, can in the loading range of non-constant width, realize the two-way flow of energy, by transformer, realized the isolation of low-pressure end and high-pressure side, by sample circuit and drive circuit, realize DC-isolation, be specially adapted to the occasion to transducer effciency is had relatively high expectations and load change is larger.
As shown in Figure 1, high conversion efficiency reversible transducer of the present invention, comprise: dsPIC30F, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, transformer, drive circuit, sample circuit, inductance, electric capacity, load, transformer comprises a former limit winding and two secondary windings.
The drain electrode of the first metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor connects respectively high-pressure side, and the source electrode of the first metal-oxide-semiconductor is connected with the drain electrode of the second metal-oxide-semiconductor, and the source electrode of the 3rd metal-oxide-semiconductor is connected with the drain electrode of the 4th metal-oxide-semiconductor, and the second and the 4th source electrode is ground connection respectively; Wherein four PWM outputs of dsPIC30F are connected with the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor grid respectively by drive circuit, its first via mould of dsPIC30F/number end is connected with high-pressure side by voltage sampling circuit, the second road mould/number end is connected with low-pressure end by voltage sampling circuit, and the high-pressure side current sample of dsPIC30F is connected between high-pressure side and the drain electrode of the first metal-oxide-semiconductor; The low-pressure end current sample of dsPIC30F is connected between the source electrode of the 6th metal-oxide-semiconductor and the tie point on ground;
The Same Name of Ends of the former limit winding of transformer is connected with the tie point of the second metal-oxide-semiconductor with the first metal-oxide-semiconductor by leakage inductance, and different name end is connected with the tie point of the 4th metal-oxide-semiconductor with the 3rd metal-oxide-semiconductor; High-pressure side electrochemical capacitor Cb positive pole is connected on high-pressure side, minus earth; Transformer secondary the first Motor Winding Same Name of Ends is connected with the drain electrode of the 6th metal-oxide-semiconductor, and different name end is connected with transformer secondary the second Motor Winding Same Name of Ends, and transformer secondary the second winding different name end is connected with the drain electrode of the 5th metal-oxide-semiconductor.Inductance L one end is connected with the tie point of two windings of transformer secondary, and the other end is connected with low-pressure end, capacitor C
6positive pole is connected with low-pressure end, minus earth, and other three PWM output of dsPIC30F is connected with the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor grid respectively by drive circuit.
Active clamp circuit of the present invention comprises the 7th metal-oxide-semiconductor, the 7th diode, the 7th electric capacity, the drain electrode of the 7th metal-oxide-semiconductor is connected with inductance one end, source electrode is connected with the 7th electric capacity one end, the 7th electric capacity other end is connected with ground, the negative electrode of the 7th diode is connected with the drain electrode of the 7th metal-oxide-semiconductor, and the anode of the 7th diode is connected with the source electrode of the 7th metal-oxide-semiconductor.
When energy flows to low-pressure end from high-pressure side, DSC drives the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor to carry out phase-shifting full-bridge control by drive circuit, and drives the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, carries out synchronous rectification; When energy flows to high-pressure side from low-pressure end, DSC drives the 5th metal-oxide-semiconductor, the 6th MOS to recommend conversion by drive circuit, and utilizes the parasitic diode of the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor self to carry out full-bridge rectification.
During concrete enforcement, the present invention also comprises the first diode, the second diode, the 3rd diode, the 4th diode, the first electric capacity, the second electric capacity, the 3rd electric capacity, the 4th electric capacity, the 5th diode, the 6th diode; The negative electrode of the first diode is connected with the drain electrode of the first metal-oxide-semiconductor with first electric capacity one end, and anode is connected with the source electrode of the first metal-oxide-semiconductor with the first electric capacity other end; The negative electrode of the second diode is connected with the drain electrode of the second metal-oxide-semiconductor with second electric capacity one end, and anode is connected with the source electrode of the second metal-oxide-semiconductor with the second electric capacity other end; The negative electrode of the 3rd diode is connected with the drain electrode of the 3rd metal-oxide-semiconductor with the 3rd electric capacity one end, and anode is connected with the source electrode of the 3rd metal-oxide-semiconductor with the 3rd electric capacity other end; The negative electrode of the 4th diode is connected with the drain electrode of the 4th metal-oxide-semiconductor with the 4th electric capacity one end, and anode is connected with the source electrode of the 4th metal-oxide-semiconductor with the 4th electric capacity other end.The negative electrode of the 5th diode is connected with the drain electrode of the 5th metal-oxide-semiconductor, and anode is connected with the source electrode of the 5th metal-oxide-semiconductor; The negative electrode of the 6th diode is connected with the drain electrode of the 6th metal-oxide-semiconductor, and anode is connected with the source electrode of the 6th metal-oxide-semiconductor.
Energy flows to low-pressure end from high-pressure side, be that circuit working is when decompression mode, dsPIC30F judges according to the low-pressure side electric current gathering: when load factor is larger, circuit is controlled and is carried out work according to general phase-shifting full-bridge, but when load hour, regulate the Dead Time of two switching tubes of same brachium pontis, thereby realize the ZVS condition of lagging leg; The 5th metal-oxide-semiconductor Q5 of low-pressure end and two switching tubes of the 6th metal-oxide-semiconductor Q6 carry out synchronous rectification according to the size of load current, when load very hour, synchronous rectifier is only open-minded when diagonal angle brachium pontis drives signal overlap, when load hour, synchronous rectifier turn-offs, only with the parasitic diode of himself, carry out rectification, when other situations, synchronous rectifier carries out work according to common mode.
Below, take boost mode as example, its operation principle is elaborated, under this pattern, low-pressure end one push-pull circuit form improves energy to high-pressure side, the switching tube of full-bridge circuit all turn-offs, only utilize the diode of himself parasitism to carry out full-bridge rectification, the driving signal dutyfactor of the 5th metal-oxide-semiconductor Q5 and two switching tubes of the 6th metal-oxide-semiconductor Q6 is greater than 50% and have a phase difference of 180 degree, switching tube the 7th metal-oxide-semiconductor Q7 only when the 5th metal-oxide-semiconductor Q5 or the 6th metal-oxide-semiconductor Q6 turn-off conducting limit its transient peaks voltage, circuit working waveform as shown in Figure 2:
T
0-t
1: t
0constantly, the 6th metal-oxide-semiconductor Q6 is open-minded, and the 5th metal-oxide-semiconductor Q5 turn-offs.T=t
0time, the 5th metal-oxide-semiconductor Q5 is open-minded.Filter inductance L energy storage, inductive current increases;
T
1-t
2: t=t
1time, the 6th metal-oxide-semiconductor Q6 turn-offs.Inductance L releases energy, the first diode D1, the 3rd diode D3 conducting.When inductance releases energy, there is peak voltage in switching tube the 6th metal-oxide-semiconductor Q6.Now, the 7th metal-oxide-semiconductor Q7 is open-minded, and the 7th capacitor C 7 is charged, thus the due to voltage spikes that clamper is caused by inductance and leakage inductance;
T
2-t
3: t=t
2time, the 7th metal-oxide-semiconductor Q7 turn-offs, switching tube is only open-minded in peak voltage lasting that time, when the voltage of switching tube the 7th metal-oxide-semiconductor Q7 leakage inductance drops to electric capacity the 7th capacitor C 7 voltages and deducts the 7th metal-oxide-semiconductor Q7 pressure drop, in electric capacity the 7th capacitor C 7, the energy back of storage is to system, this process lasts till t4, and the first diode D1, the 3rd diode D3 keep conducting;
T
3-t
6: t
3-t
4working condition is during this period of time with t
0-t
1the same.Except t=t
4time the 5th metal-oxide-semiconductor Q5 turn-off outside the first diode D1, the 3rd diode D3 conducting, t
4-t
6working condition is with t
1-t
3the same.
The present invention is under decompression mode, according to the difference of load, regulate the Dead Time of two switching tubes of same brachium pontis, be conducive to realize the ZVS condition of lagging leg, to the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4, adopt phase-shifting full-bridge to control the switching loss that reduces switching tube, the 5th metal-oxide-semiconductor Q5, the 6th metal-oxide-semiconductor Q6 according to the different choice difference rectification pattern of load to reduce switching tube loss, thereby realize the high efficiency under wide loading range.Under discharge mode, the 5th metal-oxide-semiconductor Q5, the 6th metal-oxide-semiconductor Q6 recommend conversion, increase clamp circuit and prevent due to voltage spikes, the first diode D1, the second diode D2, the 3rd diode D3, the 4th diode D4 carry out bridge rectifier, thereby realize energy, have low-pressure end to be delivered to high-pressure side.
System adopts high performance dsPIC30F chip to detect, control; sample circuit is sampled to high-low pressure terminal voltage, electric current; sampled data is carried out analog-to-digital conversion, and dsPIC30F chip is processed data, thereby regulates the duty ratio of PWM; PWM controls switching tube after drive circuit; output is regulated, if sampled data is abnormal, illustrate that fault has occurred circuit; now can block all switching tubes, realize the protection to circuit.
Above-described embodiment of the present invention, does not form limiting the scope of the present invention.Any modification of making within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in the protection range of claims of the present invention.
Claims (7)
1. a bi-directional digital DC-DC converter for wide loading range, is characterized in that: comprise high-pressure side, low-pressure end, dsPIC30F single-chip microcomputer and transformer (T1); On dsPIC30F single-chip microcomputer input, be connected with for gathering the electric current of high-pressure side and low-pressure end, the sample circuit of voltage data; The output of dsPIC30F single-chip microcomputer is connected with the drive circuit with some PWM outputs; On high-pressure side, be connected with high-pressure section rectification circuit, on low-pressure end, be connected with low-pressure section rectification circuit, and transformer (T1) is arranged between high-pressure section rectification circuit and low-pressure section rectification circuit; The output of drive circuit is connected respectively on the control end of high-pressure section rectification circuit and low-pressure section finishing circuit.
2. the bi-directional digital DC-DC converter of wide loading range according to claim 1, is characterized in that: on described low-pressure end, be provided with the active clamp circuit that prevents the parasitic concussion of secondary.
3. the bi-directional digital DC-DC converter of wide loading range according to claim 2, it is characterized in that: described transformer (T1) is the transformer of a former limit winding and two secondary windings, its Central Plains becomes winding and is connected with high-pressure section rectification circuit, and two secondary windings are connected with low-pressure section rectification circuit.
4. the bi-directional digital DC-DC converter of wide loading range according to claim 3, is characterized in that: described high-pressure section rectification circuit comprises the first metal-oxide-semiconductor (Q1), the second metal-oxide-semiconductor (Q2), the 3rd metal-oxide-semiconductor (Q3), the 4th metal-oxide-semiconductor (Q4), the first diode (D1), the second diode (D2), the 3rd diode (D3), the 4th diode (D4), the first electric capacity (C1), the second electric capacity (C2), the 3rd electric capacity (C3), the 4th electric capacity (C4), high-pressure side electrochemical capacitor (Cb) and former limit leakage inductance (Lr); Wherein, the drain electrode of the drain electrode of the first metal-oxide-semiconductor (Q1) and the 3rd metal-oxide-semiconductor (Q3) is connected with high-pressure side is anodal, the source electrode of the first metal-oxide-semiconductor (Q1) is connected with the drain electrode of the second metal-oxide-semiconductor (Q2), the source electrode of the 3rd metal-oxide-semiconductor (Q3) is connected with the drain electrode of the 4th metal-oxide-semiconductor (Q4), and the source electrode of the source electrode of the second metal-oxide-semiconductor (Q2) and the 4th metal-oxide-semiconductor (Q4) is ground connection respectively; The positive pole of high-pressure side electrochemical capacitor (Cb) is connected with high-pressure side is anodal, minus earth;
The grid of the first metal-oxide-semiconductor (Q1) is connected with a PWM output of drive circuit; The grid of the second metal-oxide-semiconductor (Q2) is connected with the 2nd PWM output of drive circuit; The grid of the 3rd metal-oxide-semiconductor (Q3) is connected with the 3rd PWM output of drive circuit; The grid of the 4th metal-oxide-semiconductor (Q4) is connected with the 4th PWM output of drive circuit;
The Same Name of Ends of the former limit of transformer (T1) winding is connected with the source electrode of the first metal-oxide-semiconductor (Q1) by former limit leakage inductance (Lr), and different name end is connected with the drain electrode of the 4th metal-oxide-semiconductor (Q4);
The negative electrode of the first diode (D1) is connected with the drain electrode of the first metal-oxide-semiconductor (Q1), and the anode of the first diode (D1) is connected with the source electrode of the first metal-oxide-semiconductor (Q1), and the first electric capacity (C1) is connected in parallel on the two ends of the first diode (D1); The negative electrode of the second diode (D2) is connected with the drain electrode of the second metal-oxide-semiconductor (Q2), and the anode of the second diode (D2) is connected with the source electrode of the second metal-oxide-semiconductor (Q2), and the second electric capacity (C2) is connected in parallel on the two ends of the second diode (D2); The negative electrode of the 3rd diode (D3) is connected with the drain electrode of the 3rd metal-oxide-semiconductor (Q3), and the anode of the 3rd diode (D3) is connected with the source electrode of the 3rd metal-oxide-semiconductor (Q3), and the 3rd electric capacity (C3) is connected in parallel on the two ends of the 3rd diode (D3); The negative electrode of the 4th diode (D4) is connected with the drain electrode of the 4th metal-oxide-semiconductor (Q4), and the anode of the 4th diode (D4) is connected with the source electrode of the 4th metal-oxide-semiconductor (Q4), and the 4th electric capacity (C4) is connected in parallel on the two ends of the 4th diode (D4).
5. the bi-directional digital DC-DC converter of wide loading range according to claim 3, is characterized in that: described low-pressure section rectification circuit comprises the 5th metal-oxide-semiconductor (Q5), the 6th metal-oxide-semiconductor (Q6), the 5th diode (D5), the 6th diode (D6), low-pressure end electrochemical capacitor (C6) and filtering leakage inductance (L); Wherein, the source ground of the source electrode of the 5th metal-oxide-semiconductor (Q5) and the 6th metal-oxide-semiconductor (Q6); The negative electrode of the 5th diode (D5) is connected with the drain electrode of the 5th metal-oxide-semiconductor (Q5), and anode is connected with the source electrode of the 5th metal-oxide-semiconductor (Q5); The negative electrode of the 6th diode (D6) is connected with the drain electrode of the 6th metal-oxide-semiconductor (Q6), and anode is connected with the source electrode of the 6th metal-oxide-semiconductor (Q6); The grid of the 5th metal-oxide-semiconductor (Q5) is connected on the 5th PWM output of drive circuit, and the grid of the 6th metal-oxide-semiconductor (Q6) is connected on the 6th PWM output of drive circuit; The Same Name of Ends of the first secondary winding of transformer (T1) is connected with the drain electrode of the 6th metal-oxide-semiconductor (Q6), and the different name end of the first secondary winding is connected with the Same Name of Ends of the second secondary winding, and the different name end of the second secondary winding is connected with the drain electrode of the 5th metal-oxide-semiconductor (Q5); One end of filtering leakage inductance (L) is connected on the tie point of the different name end of the first secondary winding and the Same Name of Ends of the second secondary winding, and the other end is connected with the positive pole of low-pressure end; The positive pole of low-pressure end electrochemical capacitor (C6) is connected with the positive pole of low-pressure end, minus earth.
6. the bi-directional digital DC-DC converter of wide loading range according to claim 5, is characterized in that: described active clamp circuit comprises the 7th metal-oxide-semiconductor (Q7), the 7th diode (D7) and the 7th electric capacity (C7); Wherein, the drain electrode of the 7th metal-oxide-semiconductor (Q7) is connected with the tie point of the Same Name of Ends of the second secondary winding with the different name end of the first secondary winding, and the source electrode of the 7th metal-oxide-semiconductor (Q7) is connected with one end of the 7th electric capacity (C7), the other end ground connection of the 7th electric capacity (C7); The grid of the 7th metal-oxide-semiconductor (Q7) is connected on the 7th PWM output of drive circuit; The negative electrode of the 7th diode (D7) is connected with the drain electrode of the 7th metal-oxide-semiconductor (Q7), and anode is connected with the source electrode of the 7th metal-oxide-semiconductor (Q7).
7. the bi-directional digital DC-DC converter of wide loading range according to claim 5, is characterized in that: described sample circuit comprises high-pressure side voltage sampling circuit, high-pressure side current sampling circuit, low-pressure end voltage sampling circuit and low-pressure end current sampling circuit; Wherein, the input of high-pressure side voltage sampling circuit is connected with high-pressure side is anodal, and output is connected with first via mould/number end of dsPIC30F single-chip microcomputer; The input of high-pressure side current sampling circuit is connected on the node between high-pressure side positive pole and the drain electrode of the first metal-oxide-semiconductor; The input of low-pressure end voltage sampling circuit is connected with low-pressure end is anodal, and output is connected with the second road mould/number end of dsPIC30F single-chip microcomputer; The input of low-pressure end current sampling circuit is connected on the node between the 6th metal-oxide-semiconductor (Q6) and ground.
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| CN104779805A (en) * | 2015-04-16 | 2015-07-15 | 陕西科技大学 | Phase-shifted full-bridge ZVS convertor with wide load range |
| CN105743355A (en) * | 2016-04-11 | 2016-07-06 | 魏腾飞 | Bidirectional converter structure of energy storage device and control method |
| CN106026754A (en) * | 2016-05-24 | 2016-10-12 | 国网福建省电力有限公司 | Multi-purpose two-way power electric test power supply system and control method thereof |
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| CN104779805A (en) * | 2015-04-16 | 2015-07-15 | 陕西科技大学 | Phase-shifted full-bridge ZVS convertor with wide load range |
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| CN106787775A (en) * | 2016-12-30 | 2017-05-31 | 深圳市崧盛电子股份有限公司 | A kind of bidirectional, dc converter and its control method |
| CN106787775B (en) * | 2016-12-30 | 2019-08-13 | 深圳市崧盛电子股份有限公司 | A kind of bidirectional, dc converter and its control method |
| CN107370385A (en) * | 2017-08-01 | 2017-11-21 | 合肥华耀电子工业有限公司 | A kind of novel liquid cooling DC/DC power supplys |
| CN107465131A (en) * | 2017-09-14 | 2017-12-12 | 国网山东省电力公司 | A kind of intelligent mobile integrated power supply |
| CN110015140A (en) * | 2017-11-30 | 2019-07-16 | 比亚迪股份有限公司 | Electric car and its power circuit |
| CN109861539A (en) * | 2017-11-30 | 2019-06-07 | 比亚迪股份有限公司 | Electric car and its power circuit |
| CN109861539B (en) * | 2017-11-30 | 2022-02-08 | 比亚迪股份有限公司 | Electric automobile and power supply circuit thereof |
| CN108712082A (en) * | 2018-07-06 | 2018-10-26 | 华域汽车电动系统有限公司 | A kind of control circuit inhibiting the oscillation of phase-shifting full-bridge secondary-side voltage |
| CN108712082B (en) * | 2018-07-06 | 2024-02-06 | 华域汽车电动系统有限公司 | Control circuit for inhibiting phase-shifting full-bridge secondary side voltage oscillation |
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