CN103401517B - Radio frequency power amplifier system - Google Patents
Radio frequency power amplifier system Download PDFInfo
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- CN103401517B CN103401517B CN201310356451.4A CN201310356451A CN103401517B CN 103401517 B CN103401517 B CN 103401517B CN 201310356451 A CN201310356451 A CN 201310356451A CN 103401517 B CN103401517 B CN 103401517B
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Abstract
The invention provides a kind of radio frequency power amplifier system, including: radio-frequency power amplifier, microprocessor, temperature detection chip, the first adjustable potentiometer and Data control gain amplifier.The current temperature value of temperature detection chip detection radio-frequency power amplifier, and send current temperature value to microprocessor, the grid voltage value corresponding with current temperature value and yield value are compared by microprocessor respectively with standard gate voltage value and nominal gain value, and send grid voltage difference to first adjustable potentiometer, by the first adjustable potentiometer, the grid voltage value of radio-frequency power amplifier is adjusted, send gain difference to Data control gain amplifier, Data control gain amplifier the yield value of radio-frequency power amplifier is adjusted.The first adjustable potentiometer and Data control gain amplifier that the present invention provides are controlled by microprocessor, therefore controlled to the grid voltage of radio-frequency power amplifier and the regulation of gain, meet grid voltage and the regulation of gain of temperature excursion complete to radio-frequency power amplifier.
Description
Technical field
The present invention relates to radio communication device technical field, more particularly, it relates to a kind of radio-frequency power is put
Big device system.
Background technology
Along with the fast development of wireless communication technology, repeater gets a lot of applications, to repeater performance
Requirement also gradually step up, it as the important component part of repeater, is communicated by radio-frequency power amplifier
Quality requirement the most gradually provides high.Radio-frequency power amplifier along with working long hours and the difference of radiating effect,
Its temperature change also can be different accordingly.Temperature change directly results in radio-frequency power amplifier gain size
Change, change in gain directly affects the linear index of radio-frequency power amplifier work;Temperature change shadow simultaneously
Ringing the size of the grid voltage of radio-frequency power amplifier, the size of grid voltage determines the size of static working current, quiet
The change of state operating current directly affects the linear index of radio-frequency power amplifier work.And linear index is certainly
Determine the quality of radio-frequency power amplifier communication quality, therefore, for improving radio-frequency power amplifier work
Linear index, it is ensured that radio-frequency power amplifier performance parameter under different operating environment temperature is consistent, needs
Gain and grid voltage to radio-frequency power amplifier regulate accordingly.
Prior art typically utilizes diode and the PN junction temperature variation characteristic of triode in compensation circuit, right
The static working current of radio-frequency power amplifier is adjusted, so to the grid voltage of radio-frequency power amplifier and
Gain is adjusted, it is ensured that radio-frequency power amplifier is under different operating ambient temperatures the one of performance parameter
Cause.
But due to diode and the characteristic of triode itself so that the gain to radio-frequency power amplifier is mended
The scope of repaying is only about+3dB~-3dB, and the gain of radio-frequency power amplifier temperature excursion entirely is
+ 5dB~-5dB, therefore, prior art is to the compensation of the gain of radio-frequency power amplifier temperature excursion entirely not
Enough, the regulation of the linear index that causes working radio-frequency power amplifier is limited.
Summary of the invention
In view of this, the present invention provides a kind of radio frequency power amplifier system, to realize putting radio-frequency power
The gain of big device compensates in full temperature excursion, improves the work linear index of radio-frequency power amplifier,
Ensure radio-frequency power amplifier performance parameter consistent under different operating environment temperature.
A kind of radio frequency power amplifier system, including:
Radio-frequency power amplifier;
It is pre-stored with the normal temperature value of described radio-frequency power amplifier, corresponding with described normal temperature value
The standard gate voltage value of described radio-frequency power amplifier and nominal gain value, and described radio-frequency power amplifier
Temperature change interval in each temperature value, and the described radio-frequency power corresponding with each temperature value described put
The grid voltage value of big device and the microprocessor of yield value;
Output is connected with the first input end of described microprocessor, detects described radio-frequency power amplifier
Current temperature value, and described current temperature value is sent to the temperature detection chip of described microprocessor;
Input is connected with the first output of described microprocessor, and output amplifies with described radio-frequency power
The first input end of device connects, it is thus achieved that the first grid pressure difference of described microprocessor output, according to described the
The first adjustable potentiometer that the grid voltage value of described radio-frequency power amplifier is adjusted by one grid voltage difference, institute
Stating first grid pressure difference is grid voltage value corresponding to described radio-frequency power amplifier current temperature value and described standard
The difference of grid voltage value;
First input end is connected with the second output of described microprocessor, output and described radio-frequency power
Second input of amplifier connects, it is thus achieved that the gain difference of described microprocessor output, according to described increasing
The Data control gain amplifier that the yield value of described radio-frequency power amplifier is adjusted by benefit difference, described increasing
Benefit difference is yield value corresponding to described radio-frequency power amplifier current temperature value and described nominal gain value
Difference.
Preferably, also include:
Radio frequency driver amplifier and the second adjustable potentiometer;
Described radio frequency driver amplifier is arranged on described Data control gain amplifier and described radio-frequency power amplifier
Between, the first input end of described radio frequency driver amplifier connects with the output of described Data control gain amplifier
Connecing, output is connected with described second input of described radio-frequency power amplifier, and described radio-frequency driven is put
The frequency signal that described Data control gain amplifier is exported by big device carries out amplifying for the first time, and penetrates described in driving
Frequently described frequency signal is amplified by power amplifier again;
The input of described second adjustable potentiometer is connected with the 3rd output of described microprocessor, output
End is connected with the second input of described radio frequency driver amplifier, and described second adjustable potentiometer obtains described
The second gate pressure difference of microprocessor output, amplifies described radio-frequency driven according to described second gate pressure difference
The grid voltage value of device is adjusted, and described second gate pressure difference is described radio frequency driver amplifier current grid voltage value
Difference with the standard gate voltage value of the described radio frequency driver amplifier of described microprocessor pre-stored.
Preferably, also include: RF coupler and the first power detection chip;
The input of described RF coupler is connected with the output of described radio-frequency power amplifier, described in penetrate
Frequently the first output of coupler is connected with the input of described first power detection chip, described first merit
The output of rate detection chip is connected with the 3rd input of described microprocessor, described RF coupler pair
The radiofrequency signal of described radio-frequency power amplifier output is sampled, and described first power detection chip obtains
The power output of the described radio-frequency power amplifier of described RF coupler output, and by described power output
Send described microprocessor to;
The rated output power of the described power output received with pre-stored is compared by described microprocessor
Relatively, when described power output is more than described rated output power, described microprocessor is to described radio frequency merit
Rate amplifier output shutdown signal, controls described radio-frequency power amplifier and quits work, described specified output
Power is the rated output power of the described radio-frequency power amplifier of described microprocessor pre-stored.
Preferably, also include: voltage-controlled attenuator and operational amplifier;
The positive input terminal of described operational amplifier connects with the described output of described first power detection chip
Connecing, negative input end is connected with the 4th output of described microprocessor, and described operational amplifier is by described defeated
The described rated output power going out power and the output of described microprocessor compares, and power output difference;
Described voltage-controlled attenuator be arranged on described Data control gain amplifier and described radio frequency driver amplifier it
Between, the input of described voltage-controlled attenuator is connected with the output of described Data control gain amplifier, described pressure
The output of controlling attenuation device is connected with the described first input end of described radio frequency driver amplifier, described voltage-controlled
The end that controls of attenuator is connected with the output of described operational amplifier, and described voltage-controlled attenuator obtains described
Power difference, the frequency signal exported described Data control gain amplifier according to described power difference carries out phase
The power attenuation answered.
Preferably, also include:
RF isolator and the second power detection chip;
The input of described RF isolator is connected with the second output of described RF coupler, output
Be connected with the input of described second power detection chip, the output of described second power detection chip with
The four-input terminal of described microprocessor connects, and described second power detection chip obtains described radio frequency isolation
The output standing wave power of the described radio-frequency power amplifier of device output, and by described output standing wave power transmission
To described microprocessor;
The specified standing wave power of the described output standing wave power received with pre-stored is entered by described microprocessor
Row compares, and when described output standing wave power is more than described specified standing wave power, described microprocessor is to institute
State radio-frequency power amplifier output shutdown signal, control described radio-frequency power amplifier and quit work, described
Specified standing wave power is the specified standing wave merit of the described radio-frequency power amplifier of described microprocessor pre-stored
Rate.
Preferably, also include: current detecting chip;
The input of described current detecting chip is connected with the drain electrode of described radio-frequency power amplifier, described electricity
The output of stream detection chip is connected with the second input of described microprocessor, described current detecting chip
Detect the drain current of described radio-frequency power amplifier, and described drain current is sent to described micro-process
Device;
The rated drain electric current of the described drain current received with pre-stored is compared by described microprocessor
Relatively, when described drain current is more than described rated drain electric current, described microprocessor is to described radio frequency merit
Rate amplifier output shutdown signal, controls described radio-frequency power amplifier and quits work, described rated drain
Electric current is the rated drain electric current of the described radio-frequency power amplifier of described microprocessor pre-stored.
From above-mentioned technical scheme it can be seen that the invention provides a kind of radio frequency power amplifier system,
Including: radio-frequency power amplifier, microprocessor, temperature detection chip, the first adjustable potentiometer and numerical control
Gain amplifier.The current temperature value of temperature detection chip detection radio-frequency power amplifier, and will current temperature
Angle value sends microprocessor to, and microprocessor is by the grid voltage value corresponding with current temperature value and yield value difference
Compare with standard gate voltage value and nominal gain value, and send grid voltage difference to first adjustable potentiometer, by
The grid voltage value of radio-frequency power amplifier is adjusted by the first adjustable potentiometer, sends gain difference to number
Control gain amplifier, is adjusted the yield value of radio-frequency power amplifier by Data control gain amplifier.This
The first adjustable potentiometer and Data control gain amplifier that invention provides are controlled by microprocessor, therefore correlation
Frequently the grid voltage of power amplifier and the regulation of gain are controlled, can meet temperature complete to radio-frequency power amplifier and become
The grid voltage of change scope and the regulation of gain.Therefore, the present invention improves the active line of radio-frequency power amplifier
Property index, it is ensured that radio-frequency power amplifier performance parameter consistent under different operating environment temperature.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to reality
Execute the required accompanying drawing used in example or description of the prior art to be briefly described, it should be apparent that below,
Accompanying drawing in description is only some embodiments of the present invention, for those of ordinary skill in the art,
On the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of a kind of radio-frequency power amplification system disclosed in the embodiment of the present invention;
Fig. 2 is the structural representation of another kind of radio-frequency power amplification system disclosed in the embodiment of the present invention;
A kind of radio frequency driver amplifier disclosed in Fig. 3 embodiment of the present invention and the grid voltage of radio-frequency power amplifier
The structural representation of regulation circuit;
Fig. 4 is voltage-controlled attenuator circuit portion in a kind of radio frequency power amplifier system disclosed in the embodiment of the present invention
The structural representation divided;
Fig. 5 is standing wave detection branch portion in a kind of radio frequency power amplifier system disclosed in the embodiment of the present invention
The structural representation divided;
Fig. 6 is current detecting branch road portion in a kind of radio frequency power amplifier system disclosed in the embodiment of the present invention
The structural representation divided.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out
Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of the present invention, and
It is not all, of embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art are not making
Go out the every other embodiment obtained under creative work premise, broadly fall into the scope of protection of the invention.
See Fig. 1, the embodiment of the invention discloses the structural representation of a kind of radio-frequency power amplification system, bag
Include: radio-frequency power amplifier 1, microprocessor 2, temperature detection chip the 3, first adjustable potentiometer 4 and
Data control gain amplifier 5;
Wherein:
Radio-frequency power amplifier 1 can be class A amplifier or Class B amplifier.
Microprocessor 2 is pre-stored with the normal temperature value of radio-frequency power amplifier 1, with described standard temperature
The standard gate voltage value of the radio-frequency power amplifier 1 that angle value is corresponding and nominal gain value, and radio-frequency power puts
Each temperature value in the temperature change interval of big device 1, and the radio-frequency power corresponding with each temperature value described
The grid voltage value of amplifier 1 and yield value.
It should be noted is that, described normal temperature value can be a concrete temperature value, it is also possible to
Value for certain temperature section, in practice it has proved that, temperature value corresponding during radio-frequency power amplifier 1 quiescent operation
It is more or less the same, therefore, it can by temperature range during radio-frequency power amplifier 1 quiescent operation (generally
35 DEG C~45 DEG C) as normal temperature value;The grid corresponding when normal temperature value by radio-frequency power amplifier 1
Pressure value is as standard gate voltage value;Yield value corresponding when normal temperature value for radio-frequency power amplifier 1 is made
For nominal gain value.
Therefore, it can divide interval for the temperature change of radio-frequency power amplifier 1 according to identical temperature difference
For multiple temperature sections, the grid voltage value of all corresponding radio-frequency power amplifier 1 of each temperature section and yield value.
The output of temperature detection chip 3 is connected with the first input end of microprocessor 2, temperature detection core
Sheet 3 can detect the Current Temperatures of radio-frequency power amplifier 1, and sends described Current Temperatures to micro-place
Reason device 2.
Wherein, the digital temperature sensor that temperature detection chip 3 can use model to be ADT75, ADT75
The measurement temperature range of digital temperature sensor is-55 DEG C~+125 DEG C, and trueness error is ± 1 DEG C, resolution ratio
It it is 0.0625 DEG C.The temperature value of acquisition can be converted to the 12 megadyne temperature number of degrees by ADT75 digital temperature sensor
According to, and send described 12 megadyne temperature degrees of data to microprocessor 2.
The input of the first adjustable potentiometer 4 is connected with the first output of microprocessor 2, output with
The first input end of radio-frequency power amplifier 1 connects, and it is defeated that the first adjustable potentiometer 4 obtains microprocessor 2
The the first grid voltage value gone out, adjusts the grid voltage value of radio-frequency power amplifier 1 according to described first grid voltage value
Joint, wherein, the first grid voltage value is grid voltage value corresponding to radio-frequency power amplifier 1 current temperature value and standard
The difference of grid voltage value.
It is understood that when the first grid voltage value be on the occasion of time, represent and increase radio-frequency power amplifier 1
Grid voltage value, on the contrary, when the first grid voltage value is negative value, represents the grid voltage reducing radio-frequency power amplifier 1
Value.
Visible, the first adjustable potentiometer 4 that the present invention provides is controlled by microprocessor 2, and according to micro-place
The grid voltage value of radio-frequency power amplifier 1 is adjusted, so that penetrating by the first grid voltage value of reason device 2 output
Frequently power amplifier 1 has the default linearity.
The first input end of Data control gain amplifier 5 is connected with the second output of microprocessor 2, output
End is connected with the second input of radio-frequency power amplifier 1, and Data control gain amplifier 5 obtains microprocessor 2
The gain difference of output, is adjusted the yield value of radio-frequency power amplifier 1 according to described gain difference,
Wherein, gain difference is yield value corresponding to radio-frequency power amplifier 1 current temperature value and nominal gain value
Difference.
Wherein, Data control gain amplifier 5 being additionally provided with the second input, described second input is permissible
As the input of whole radio frequency power amplifier system, for the input of initial radio frequency signal.Numerical control increases
Benefit amplifier 5 has attenuation function to radiofrequency signal, and whether controlled attenuation is in micro-to input radio frequency signal
Processor 2, when microprocessor 2 exports high level, Data control gain amplifier 5 is decayed effectively, on the contrary,
When microprocessor 2 output low level, it is invalid that Data control gain amplifier 5 is decayed, the most not to radiofrequency signal
Decay.
The Data control gain amplifier that Data control gain amplifier 5 can use model to be HMC625, HMC625
The gain adjustment range of Data control gain amplifier is-13.5dB~18dB, and trueness error is ± 0.25dB.
In summary it can be seen, the first adjustable potentiometer 4 and Data control gain amplifier 5 that the present invention provides are equal
It is controlled by microprocessor 2, therefore controlled to the grid voltage of radio-frequency power amplifier 1 and the regulation of gain, permissible
Meet grid voltage and the regulation of gain of temperature excursion complete to radio-frequency power amplifier 1.And prior art is sharp
By the characteristic of diode and triode itself, radio-frequency power amplifier is regulated, diode and three can be limited to
The characteristic of pole pipe itself, so the regulation to radio-frequency power amplifier 1 is uncontrollable.Therefore, the present invention carries
The high work linear index of radio-frequency power amplifier 1, it is ensured that radio-frequency power amplifier 1 is in different works
Make the consistent of performance parameter under environment temperature.
On the basis of embodiment illustrated in fig. 1, see Fig. 2, the embodiment of the invention discloses another kind of radio frequency
The structural representation of power amplifying system, radio-frequency power amplification system can also include: radio-frequency driven is amplified
Device 6 and the second adjustable potentiometer 7.
Radio frequency driver amplifier 6 is arranged between Data control gain amplifier 5 and radio-frequency power amplifier 1,
The first input end of radio frequency driver amplifier 6 is connected with the output of Data control gain amplifier 5, output
Being connected with the second input of radio-frequency power amplifier 1, numerical control gain is amplified by radio frequency driver amplifier 6
The frequency signal of device 5 output carries out amplifying for the first time, and drives radio-frequency power amplifier 1 to frequency signal
Amplify again.
It will be appreciated by persons skilled in the art that at the same temperature, by radio-frequency power amplifier 1
Grid voltage value, it is possible to obtain the grid voltage value of radio frequency driver amplifier 6.Therefore, in the present embodiment, micro-process
Device 2 can also store the grid voltage value of radio frequency driver amplifier corresponding to each temperature section 6, and standard
The standard gate voltage value of the radio frequency driver amplifier 6 that temperature value is corresponding.
The input of the second adjustable potentiometer 7 is connected with the 3rd output of microprocessor 2, output with
Second input of radio frequency driver amplifier 6 connects, and it is defeated that the second adjustable potentiometer 7 obtains microprocessor 2
The second gate pressure difference gone out, adjusts the grid voltage value of radio frequency driver amplifier 6 according to second gate pressure difference
Joint, second gate pressure difference is the current grid voltage value of radio frequency driver amplifier 6 and the penetrating of microprocessor 2 pre-stored
Frequently the difference of the standard gate voltage value of driving amplifier 6.
In summary it can be seen, the first adjustable potentiometer 4 and the second adjustable potentiometer 7 constitute radio-frequency power
The grid voltage regulation part of amplification system.
Referring specifically to Fig. 3, radio frequency driver amplifier and the grid voltage of radio-frequency power amplifier that the present invention provides are adjusted
The structural representation on economize on electricity road, microprocessor 2 exports two-way grid voltage difference, and a road is through the first adjustable electric
Position device 4, the grid voltage value of regulation radio-frequency power amplifier 1;One tunnel is through the second adjustable potentiometer 7, regulation
The grid voltage value of radio frequency driver amplifier 6.Microprocessor 2 is by controlling the first adjustable potentiometer 4 and second
Adjustable potentiometer 7, can be simultaneously to the grid voltage value of radio-frequency power amplifier 1 and radio frequency driver amplifier 6
Grid voltage value is adjusted.
Microprocessor 2 according to temperature value to the grid voltage value of radio-frequency power amplifier 1 and radio frequency driver amplifier 6
The Principles of Regulation of grid voltage value be: the temperature of radio-frequency power amplifier 1 and radio frequency driver amplifier 6 raises
Time, its static working current is gradually increased, and linear index is progressively deteriorated, now, by reducing grid voltage value
To reduce static working current, thus improve the linear index of radio-frequency power amplifier 1 and radio-frequency driven is put
The linear index of big device 6.Otherwise, the temperature fall of radio-frequency power amplifier 1 and radio frequency driver amplifier 6
Time low, its static working current is gradually reduced, and linear index is progressively deteriorated, now, by increasing grid voltage
Value is to increase static working current, thus improves linear index and the radio-frequency driven of radio-frequency power amplifier 1
The linear index of amplifier 6.
It will be appreciated by persons skilled in the art that temperature changes the gain to radio-frequency power amplifier 1
The gain performance of performance and radio frequency driver amplifier 6 all has a certain impact.When temperature raises, radio frequency merit
The gain performance of rate amplifier 1 and radio frequency driver amplifier 6 all gradually reduces, and causes radio-frequency power to amplify
The gain performance of device system reduces, and now, is protected by the multiplication factor increasing Data control gain amplifier 5
The gain of card radio frequency power amplifier system is constant;Otherwise, when temperature reduces, radio-frequency power amplifier 1
All step up with the gain performance of radio frequency driver amplifier 6, cause the increasing of radio frequency power amplifier system
Benefit performance improves, and now, ensures radio-frequency power by the multiplication factor reducing Data control gain amplifier 5
The gain of amplifier system is constant.
Those skilled in the art it is well known that, the range of temperature of radio-frequency power amplifier 1 is generally
-40 DEG C~100 DEG C, in practice it has proved that, can be using 35 DEG C~45 DEG C as radio-frequency power amplifier 1 quiescent operation
Time temperature range, i.e. normal temperature value;Nominal gain value corresponding to normal temperature value becomes as yield value
The a reference value changed, namely preset value;The standard gate voltage of the radio-frequency power amplifier 1 that normal temperature value is corresponding
Value, as the initial voltage value of radio-frequency power amplifier 1;The radio-frequency driven amplification that normal temperature value is corresponding
The standard gate voltage value of device 6, as the initial voltage value of radio frequency driver amplifier 6.
Within the temperature range of-40 DEG C~100 DEG C, dividing temperature section according to every 5 DEG C, each temperature section is corresponding
Yield value with 0.5dB stepping, grid voltage value corresponding to each temperature section with 10mv stepping, each humidity province
Between corresponding Data control gain amplifier 5, radio frequency driver amplifier 6, the dependency number of radio-frequency power amplifier 1
Value sees table 1:
Table 1
Seeing table 1, when temperature is 35 DEG C~45 DEG C, the preset value of corresponding Data control gain amplifier 5 (is i.e. marked
Quasi-yield value), the initial voltage value (i.e. standard gate voltage value) of radio frequency driver amplifier 6 and radio-frequency power
The initial voltage value (i.e. standard gate voltage value) of amplifier 1, skilled person will appreciate that, above three
Numerical value is equal it is known that the most therefore, the yield value of the Data control gain amplifier that each temperature section is corresponding, radio-frequency driven
The grid voltage value of amplifier and the grid voltage value of radio-frequency power amplifier are the most known.Microprocessor 2 is according to acquisition
Current temperature value, from table 1, can find the Data control gain amplifier 5 corresponding with current temperature value
Yield value, the grid voltage value of radio frequency driver amplifier 6, and the grid voltage value of radio-frequency power amplifier 1.
Yield value and preset value are compared and can obtain gain difference;Grid voltage by radio frequency driver amplifier 6
Value compares with the initial voltage value of radio frequency driver amplifier 6, can obtain radio frequency driver amplifier 6
Grid voltage difference;Initial voltage by the grid voltage value of radio-frequency power amplifier 1 Yu radio-frequency power amplifier 1
Value compares, and can obtain the grid voltage difference of radio-frequency power amplifier 1.
For optimizing technique scheme further, the radio frequency power amplifier system that the present invention provides, also may be used
To include: RF coupler 8 and the first power detection chip 9;
The input of RF coupler 8 is connected with the output of radio-frequency power amplifier 1, RF coupler 8
The first output and the first power detection chip 9 input connect, the first power detection chip 9
Output is connected with the 3rd input of microprocessor 2, and RF coupler 8 is to radio-frequency power amplifier 1
The radiofrequency signal of output is sampled, and the first power detection chip 9 obtains penetrating of RF coupler 8 output
Frequently the power output of power amplifier 1, and send described power output to microprocessor 2;
The rated output power of the described power output received with pre-stored is compared by microprocessor 2,
When power output is more than rated output power, microprocessor 2 cuts out to radio-frequency power amplifier 1 output
Signal, controls radio-frequency power amplifier 1 and quits work, and wherein, described rated output power is micro-process
The rated output power of the radio-frequency power amplifier 1 of device 2 pre-stored.
In summary it can be seen, RF coupler the 8, first power detection chip 9 and microprocessor 2 can be with structures
Become the power output detection branch of radio-frequency power amplifier 1 in radio frequency power amplifier system, when radio frequency merit
When the power output of rate amplifier 1 is more than rated output power, illustrate that now radio-frequency power amplifier 1 is
Through breaking down, it is necessary to it is carried out closedown process, with reduction, radio frequency power amplifier system is brought
Harm.Wherein, too small for the power signal avoiding the first power detection chip 9 to gather, make microprocessor 2
React insensitive, can a computing be set between the first power detection chip 9 and microprocessor 2 and puts
Big device (not shown in Fig. 2).
For optimizing technique scheme further, the radio frequency power amplifier system that the present invention provides, also may be used
To include: voltage-controlled attenuator 10 and operational amplifier 11;
The positive input terminal of operational amplifier 11 and the output of the first power detection chip 9 connect, negative input
End is connected with the 4th output of microprocessor 2, and operational amplifier 11 will be from the first power detection chip 9
The rated output power that the power output obtained and microprocessor 2 export compares, and output work rate variance
Value;
Voltage-controlled attenuator 10 is arranged between Data control gain amplifier 5 and radio frequency driver amplifier 6, voltage-controlled
The input of attenuator 10 is connected with the output of Data control gain amplifier 5, voltage-controlled attenuator 10 defeated
Going out end to be connected with the first input end of radio frequency driver amplifier 6, voltage-controlled attenuator 10 obtains power difference,
The frequency signal exported Data control gain amplifier 5 according to this power difference carries out corresponding power attenuation.
Wherein, the operational amplifier that operational amplifier 11 can use model to be LM358.
The voltage-controlled attenuator that voltage-controlled attenuator 10 can use model to be HSMP3816, HSMP3816 presses
The attenuation range of controlling attenuation device is 0~38dB.
Preferably, between the first power detection chip 9 and the positive input terminal of operational amplifier 11, also may be used
To arrange an operational amplifier (not shown in Fig. 2), with to the first power detection chip 9 output
Power output is amplified.
In summary it can be seen, RF coupler the 8, first power detection chip 9, microprocessor 2, computing
Amplifier 11 and voltage-controlled attenuator 10 may be constructed the attenuator circuit of radio frequency power amplifier system.
Referring specifically to Fig. 4, voltage-controlled decay in a kind of radio frequency power amplifier system that the embodiment of the present invention provides
The structural representation of circuit part, the first power detection chip 9 obtains the radio frequency of RF coupler 8 output
The power output of power amplifier 1, and described power output is sent to microprocessor 2, microprocessor 2
The rated output power of the described power output received with pre-stored is compared, when power output is little
When rated output power, microprocessor 2 exports rated output power.Operational amplifier 11 will be from first
The rated output power that the power output that power detection chip 9 obtains and microprocessor 2 export compares,
And power output difference, voltage-controlled attenuator 10 obtains power difference, according to this power difference to numerical control gain
The frequency signal of amplifier 5 output carries out corresponding power attenuation, thus completes radio frequency power amplification
The control of device 1 power output.
For optimizing technique scheme further, the radio frequency power amplifier system that the present invention provides, also may be used
To include: RF isolator 12 and the second power detection chip 13;
The input of RF isolator 12 is connected with the second output of RF coupler 8, output and
The input of two power detection chips 13 connects, the output of the second power detection chip 13 and micro-process
The four-input terminal of device 2 connects, and the second power detection chip 13 obtains penetrating of RF isolator 12 output
Frequently the output standing wave power of power amplifier 1, and send described output standing wave power to microprocessor 2;
The specified standing wave power of the output standing wave power received with pre-stored is compared by microprocessor 2,
When exporting standing wave power more than specified standing wave power, microprocessor 2 exports to radio-frequency power amplifier 1
Shutdown signal, controls radio-frequency power amplifier 1 and quits work, and wherein, specified standing wave power is micro-process
The specified standing wave power of the radio-frequency power amplifier 1 of device 2 pre-stored.
In summary it can be seen, RF isolator the 12, second power detection chip 13 and microprocessor 2 are permissible
The standing wave power detection branch road of the radio-frequency power amplifier 1 in composition radio frequency power amplifier system, circuit
Block diagram is referring specifically to Fig. 5.
Wherein, a computing can also be arranged between the second power detection chip 13 and microprocessor 2 to put
Big device (not shown in Fig. 5), is amplified with the standing wave power to the second power detection chip 13 output.
For optimizing above-mentioned each technical scheme further, the radio frequency power amplifier system that the present invention provides, also
May include that current detecting chip 14;
The input of current detecting chip 14 is connected with the drain electrode of radio-frequency power amplifier 1, current detecting core
The output of sheet 14 is connected with the second input of microprocessor 2, and current detecting chip 14 detects radio frequency
The drain current of power amplifier 1, and send described drain current to microprocessor 2;
The rated drain electric current of the drain current received with pre-stored is compared by microprocessor 2, when
When drain current is more than rated drain electric current, microprocessor 2 cuts out letter to radio-frequency power amplifier 1 output
Number, control radio-frequency power amplifier 1 and quit work, wherein, rated drain electric current is that microprocessor 2 is pre-
The rated drain electric current of the radio-frequency power amplifier 1 of storage.
In summary it can be seen, radio-frequency power amplifier 1, current detecting chip 14 and microprocessor 2 are permissible
Current detecting branch road in composition, circuit block diagram is referring specifically to Fig. 6.
Wherein, an operational amplifier can also be set between current detecting chip 14 and microprocessor 2
(not shown in Fig. 6), is amplified with the drain current exporting current detecting chip 14.
It should be noted is that, in microprocessor 2, each rated value of pre-stored is radio-frequency power and puts
The maximum threshold of big device system protection.
Microprocessor 2 exports shutdown signal to radio-frequency power amplifier 1, controls radio-frequency power amplifier 1
Quit work, be specially the grid voltage turning off radio-frequency power amplifier 1.When in radio frequency power amplifier system
When including radio frequency driver amplifier 6, microprocessor 2 also can export to radio frequency driver amplifier 6 simultaneously
Shutdown signal, turns off the grid voltage of radio frequency driver amplifier 6, controls radio frequency driver amplifier 6 and quits work.
In this specification, each embodiment uses the mode gone forward one by one to describe, and each embodiment stresses
Being the difference with other embodiments, between each embodiment, identical similar portion sees mutually.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses
The present invention.Multiple amendment to these embodiments will be aobvious and easy for those skilled in the art
See, generic principles defined herein can without departing from the spirit or scope of the present invention,
Realize in other embodiments.Therefore, the present invention is not intended to be limited to the embodiments shown herein,
And it is to fit to the widest scope consistent with principles disclosed herein and features of novelty.
Claims (5)
1. a radio frequency power amplifier system, it is characterised in that including:
Radio-frequency power amplifier;
It is pre-stored with the normal temperature value of described radio-frequency power amplifier, corresponding with described normal temperature value
The standard gate voltage value of described radio-frequency power amplifier and nominal gain value, and described radio-frequency power amplifier
Temperature change interval in each temperature value, and the described radio-frequency power corresponding with each temperature value described put
The grid voltage value of big device and the microprocessor of yield value;
Output is connected with the first input end of described microprocessor, detects described radio-frequency power amplifier
Current temperature value, and described current temperature value is sent to the temperature detection chip of described microprocessor;
Input is connected with the first output of described microprocessor, and output amplifies with described radio-frequency power
The first input end of device connects, it is thus achieved that the first grid pressure difference of described microprocessor output, according to described the
The first adjustable potentiometer that the grid voltage value of described radio-frequency power amplifier is adjusted by one grid voltage difference, institute
Stating first grid pressure difference is grid voltage value corresponding to described radio-frequency power amplifier current temperature value and described standard
The difference of grid voltage value;
First input end is connected with the second output of described microprocessor, output and described radio-frequency power
Second input of amplifier connects, it is thus achieved that the gain difference of described microprocessor output, according to described increasing
The Data control gain amplifier that the yield value of described radio-frequency power amplifier is adjusted by benefit difference, described increasing
Benefit difference is yield value corresponding to described radio-frequency power amplifier current temperature value and described nominal gain value
Difference;
RF coupler and the first power detection chip;
The input of described RF coupler is connected with the output of described radio-frequency power amplifier, described in penetrate
Frequently the first output of coupler is connected with the input of described first power detection chip, described first merit
The output of rate detection chip is connected with the 3rd input of described microprocessor, described RF coupler pair
The radiofrequency signal of described radio-frequency power amplifier output is sampled, and described first power detection chip obtains
The power output of the described radio-frequency power amplifier of described RF coupler output, and by described power output
Send described microprocessor to;
The rated output power of the described power output received with pre-stored is compared by described microprocessor
Relatively, when described power output is more than described rated output power, described microprocessor is to described radio frequency merit
Rate amplifier output shutdown signal, controls described radio-frequency power amplifier and quits work, described specified output
Power is the rated output power of the described radio-frequency power amplifier of described microprocessor pre-stored.
Radio frequency power amplifier system the most according to claim 1, it is characterised in that also include:
Radio frequency driver amplifier and the second adjustable potentiometer;
Described radio frequency driver amplifier is arranged on described Data control gain amplifier and described radio-frequency power amplifier
Between, the first input end of described radio frequency driver amplifier connects with the output of described Data control gain amplifier
Connecing, output is connected with described second input of described radio-frequency power amplifier, and described radio-frequency driven is put
The frequency signal that described Data control gain amplifier is exported by big device carries out amplifying for the first time, and penetrates described in driving
Frequently described frequency signal is amplified by power amplifier again;
The input of described second adjustable potentiometer is connected with the 3rd output of described microprocessor, output
End is connected with the second input of described radio frequency driver amplifier, and described second adjustable potentiometer obtains described
The second gate pressure difference of microprocessor output, amplifies described radio-frequency driven according to described second gate pressure difference
The grid voltage value of device is adjusted, and described second gate pressure difference is described radio frequency driver amplifier current grid voltage value
Difference with the standard gate voltage value of the described radio frequency driver amplifier of described microprocessor pre-stored.
Radio frequency power amplifier system the most according to claim 2, it is characterised in that also include:
Voltage-controlled attenuator and operational amplifier;
The positive input terminal of described operational amplifier connects with the described output of described first power detection chip
Connecing, negative input end is connected with the 4th output of described microprocessor, and described operational amplifier is by described defeated
The described rated output power going out power and the output of described microprocessor compares, and power output difference;
Described voltage-controlled attenuator be arranged on described Data control gain amplifier and described radio frequency driver amplifier it
Between, the input of described voltage-controlled attenuator is connected with the output of described Data control gain amplifier, described pressure
The output of controlling attenuation device is connected with the described first input end of described radio frequency driver amplifier, described voltage-controlled
The end that controls of attenuator is connected with the output of described operational amplifier, and described voltage-controlled attenuator obtains described
Power difference, the frequency signal exported described Data control gain amplifier according to described power difference carries out phase
The power attenuation answered.
Radio frequency power amplifier system the most according to claim 3, it is characterised in that also include:
RF isolator and the second power detection chip;
The input of described RF isolator is connected with the second output of described RF coupler, output
Be connected with the input of described second power detection chip, the output of described second power detection chip with
The four-input terminal of described microprocessor connects, and described second power detection chip obtains described radio frequency isolation
The output standing wave power of the described radio-frequency power amplifier of device output, and by described output standing wave power transmission
To described microprocessor;
The specified standing wave power of the described output standing wave power received with pre-stored is entered by described microprocessor
Row compares, and when described output standing wave power is more than described specified standing wave power, described microprocessor is to institute
State radio-frequency power amplifier output shutdown signal, control described radio-frequency power amplifier and quit work, described
Specified standing wave power is the specified standing wave merit of the described radio-frequency power amplifier of described microprocessor pre-stored
Rate.
5. according to the radio frequency power amplifier system described in any one of Claims 1-4, it is characterised in that
Also include: current detecting chip;
The input of described current detecting chip is connected with the drain electrode of described radio-frequency power amplifier, described electricity
The output of stream detection chip is connected with the second input of described microprocessor, described current detecting chip
Detect the drain current of described radio-frequency power amplifier, and described drain current is sent to described micro-process
Device;
The rated drain electric current of the described drain current received with pre-stored is carried out by described microprocessor
Relatively, when described drain current is more than described rated drain electric current, described microprocessor is to described radio frequency
Power amplifier output shutdown signal, controls described radio-frequency power amplifier and quits work, described specified leakage
Electrode current is the rated drain electric current of the described radio-frequency power amplifier of described microprocessor pre-stored.
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CN105467177A (en) * | 2014-08-22 | 2016-04-06 | 中兴通讯股份有限公司 | Power amplification grid voltage adjustment method and power amplification grid voltage adjustment device |
CN104297537B (en) * | 2014-10-27 | 2018-03-27 | 上海原动力通信科技有限公司 | A kind of power amplifier grid voltage adjusting means and adjusting method |
CN106234557A (en) * | 2016-10-10 | 2016-12-21 | 成都沃特塞恩电子技术有限公司 | A kind of radio frequency power source and radio frequency thawing apparatus |
CN109088606A (en) * | 2017-06-14 | 2018-12-25 | 中兴通讯股份有限公司 | A kind of power amplifier quiescent current method of adjustment, device, system and storage medium |
CN107911861A (en) * | 2017-11-09 | 2018-04-13 | 广东欧珀移动通信有限公司 | Power regulating method and related product |
CN109088645A (en) * | 2018-08-29 | 2018-12-25 | 江苏本能科技有限公司 | Rfid transmissions Poewr control method and device |
CN109639247B (en) * | 2018-12-12 | 2023-07-04 | 上海剑桥科技股份有限公司 | Monitoring control system and method for output power of radio frequency power amplifier |
CN110012529B (en) * | 2019-03-13 | 2022-03-15 | 维沃移动通信有限公司 | Gain mode switching method and mobile terminal |
CN114265450B (en) * | 2021-12-22 | 2023-01-20 | 杭州长川科技股份有限公司 | Output control method and device of high-power amplifier and electronic equipment |
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