CN103021985B - Electric leading-out structure of sensor chip to be detected and application thereof - Google Patents
Electric leading-out structure of sensor chip to be detected and application thereof Download PDFInfo
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- CN103021985B CN103021985B CN201110281248.6A CN201110281248A CN103021985B CN 103021985 B CN103021985 B CN 103021985B CN 201110281248 A CN201110281248 A CN 201110281248A CN 103021985 B CN103021985 B CN 103021985B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The invention relates to an electric leading-out structure of a sensor chip to be detected and an application thereof. The sensor chip (16) to be detected is provided with a pad (9) and a metal welding point (10) located on the pad (9). The electric leading-out structure further comprises a flexible substrate (14) provided with the pad and an interconnecting line. The sensor chip to be detected is reversely welded on the pad of the flexible substrate (14) through the welding point (10). Electric lead-out is realized through a welding line (15) by the pad of the flexible substrate (14). According to the invention, electric lead-out of a stress/temperature sensor is realized through the flexible substrate, and then the sensor with electric lead-out is used as an analog chip which is packaged by a packaging technique to be detected. The stress led in by the packaging technique can be obtained by measuring stress changes before and after packaging. The method of electric lead-out through the flexible substrate solves the problem that the stress sensor for packaging is hard to calibrate before packaging. The sensor is further used to measure the packaging stress and temperature in real time online.
Description
Technical field
The invention belongs to IC manufacturing, encapsulation and field of measuring technique.Specifically refer to electric leading-out structure and the application thereof of sensor chip to be measured.
Background technology
Along with integrated antenna package technology is to the development in the directions such as miniaturization, high density and three-dimension packaging, and chip area constantly increases, and encapsulates the die stress problem caused and becomes increasingly conspicuous, become the one of the main reasons of component failure.Therefore, the testing and analyzing carrying out encapsulation stress becomes improvement packaging technology, improves the important step of device reliability.Compared with traditional stress test method, the stress test chip utilizing the piezoresistive effect of silicon to manufacture and custom integrated circuit process compatible, measuring equipment is fairly simple, and test result can reflect chip actual loading situation, is the powerful carrying out integrated antenna package stress measurement.
Pressure drag strain gauge is the piezoresistive effect utilizing silicon, and the resistance change caused by measuring additional stress calculates the stress distribution of chip surface.Based on the silicon chip of (100) crystal face as substrate due to what adopt in IC manufacturing, in order to the stress distribution in analog integrated circuit encapsulation process truly, so piezoresistance sensor is generally produced on (100) silicon substrate.In order to demarcate three piezoresistance coefficient ∏ of the piezoresistance sensor of silicon
11, ∏
12, and ∏
44and the stress of test different directions, the multiple of making mix B or P resistance generally along <100> and <110> different crystal orientations, the test structure of strain gauge just progressively defines the various structures along different crystal orientations such as 2 elements, 3 elements, off-axis 3 element, 4 elements and 6 elements, and this kind of piezoresistance sensor is confined to the measurement of silicon chip in-plane stress, the information of face external carbuncle also cannot be obtained.Recently, by strain gauge (the Marc Baumann that CMOS (Complementary Metal Oxide Semiconductor) technique makes, IEEE SENSORS 2009 Conference, 441), utilize along the piezoresistive effect perpendicular to silicon chip direction, achieve in face to the stress measurement face.
Generally speaking, strain gauge is measured and is exported and stress in theory linearly proportionate relationship, before testing sensor encapsulation, its output should be zero, but because transducer can introduce residual stress at process for making, simultaneously the impact of test bad border particularly temperature is very large, cause the test before sensor package export and non-vanishing, and transducer exports and stress departs from linear proportionate relationship, therefore, output before testing sensor chip package and the temperature of test chip most important, be the major issue affecting encapsulation stress measurement accuracy.
Conventional front value scaling method be generally utilize probe to be pressed onto chip to be measured pad on obtain, then connect external measurement device by metal bonding wire again and record the value after sensor package (Fig. 1), Fig. 1 (a) is worth instrumentation plan before before sensor package, be pressed onto on test chip 2 by probe 1, and value exports before the other end of probe connection external test arrangements being recorded, Fig. 1 (b) is for testing the schematic diagram of output after sensor package, transducer is connected on substrate 6 by metal lead wire 3, cover after shell 4 completes encapsulation, and connected after external test arrangements records sensor package by bonding wire 5 and be worth, stress intensity is obtained by comparing front and back value, and itself also introduce stress because probe when front value is measured is pressed onto to measure on chip, before making encapsulation there is error in value measurement, and the test mode difference before and after sensor package, therefore, the stress relative size that such method for measuring stress is introduced under can only being used for more different packaging technology condition, cannot realize in a certain potting process, introducing definitely accurately measuring of stress.
Another problem of existing strain gauge is, transducer does not realize electricity and draws before encapsulation completes, and just cannot realize the real-time monitoring to STRESS VARIATION in encapsulation process yet.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of electric leading-out structure of sensor chip to be measured, and utilizes this structure to realize the accurate measurement of encapsulation stress and the distribution of real time and on line monitoring stress.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme: the electric leading-out structure of sensor chip to be measured, is characterized in that: described sensor chip to be measured (16) is provided with pad (9) and is positioned at the metal solder joint (10) on pad (9); This electric leading-out structure also comprises the flexible base, board (14) being provided with pad and interconnection line, and described sensor chip to be measured is welded on the pad of flexible base, board (14) by metal solder joint (10) upside-down mounting; Realize electricity by the pad of flexible base, board (14) by bonding wire (15) to draw.
As one of the preferred technical solution of the present invention, described sensor chip to be measured comprises substrate, preparation strain gauge (12,13) over the substrate and temperature sensor (11).
As one of the preferred technical solution of the present invention, described substrate is (100) silicon chip or SOI sheet.
As one of the preferred technical solution of the present invention, described strain gauge is 10 by doping content
15/ cm
3~ 10
19/ cm
3the piezo-resistance that the boron of scope and phosphorus are made or MOS device.
As one of the preferred technical solution of the present invention, described temperature sensor is the metal platinum of deposit thickness 50 ~ 200 nanometer.
As one of the preferred technical solution of the present invention, described flexible base, board (14) is comb shape; This flexible base, board (14) nose of comb is suspended in the air, and the other end is fixed; The upside-down mounting of described sensor chip to be measured (16) is welded in the nose of comb of this flexible base, board (14).
The present invention also provide a kind of measure epoxy resin cure produce the method for stress, it is characterized in that, the method comprises the following steps:
1) prepare the electric leading-out structure of sensor chip to be measured and measure its stress;
2) epoxy resin is adopted to be attached on pcb board by above-mentioned electric leading-out structure;
3) baking step 2) after obtain structure;
4) measuring process 3) after stress;
5) calculation procedure 1) and step 4) stress difference, namely obtain the stress introduced of epoxy resin cure.
As one of the preferred technical solution of the present invention, described step 1) in measure its stress and comprise: after a) obtaining electric leading-out structure, outer meeting resistance forms resistance bridge, measures and records the voltage output variation with temperature curve of this electric bridge; B), after pulling down described outer meeting resistance, adopt epoxy resin described electric leading-out structure to be attached to pcb board (18) and go up and dry; C) resistance bridge of external identical resistance formation, measure and the voltage recording this electric bridge exports variation with temperature curve, curve d) compared before and after paster obtains absolute stress that epoxy resin cure introduces and the temperature variant rule of stress.
As one of the preferred technical solution of the present invention, described step 1) in the electric leading-out structure of sensor chip to be measured comprise sensor chip to be measured, described sensor chip to be measured (16) is provided with pad (9) and is positioned at the metal solder joint (10) on pad (9); This electric leading-out structure also comprises the flexible base, board (14) being provided with pad and interconnection line, and described sensor chip to be measured is welded on the pad of flexible base, board (14) by metal solder joint (10) upside-down mounting; Realize electricity by the pad of flexible base, board (14) by bonding wire (15) to draw.
The present invention also provide a kind of real-time online measuring epoxy resin cure produce the method for stress, it is characterized in that, the method comprises the following steps:
1) electric leading-out structure of sensor chip to be measured is prepared;
2) epoxy resin is adopted to be attached on pcb board by above-mentioned electric leading-out structure;
3) by step 2) after obtain structure put into baking oven (19) toast;
4) real-time online measuring step 3 is carried out) stress that produces in process.
As one of the preferred technical solution of the present invention, described step 1) in the electric leading-out structure of sensor chip to be measured comprise sensor chip to be measured, described sensor chip to be measured (16) is provided with pad (9) and is positioned at the metal solder joint (10) on pad (9); This electric leading-out structure also comprises the flexible base, board (14) being provided with pad and interconnection line, and described sensor chip to be measured is welded on the pad of flexible base, board (14) by metal solder joint (10) upside-down mounting; Realize electricity by the pad of flexible base, board (14) by bonding wire (15) to draw.
The present invention also provides a kind of method introducing stress in measuring transducer flip-chip interconnection process, it is characterized in that: the method comprises the following steps:
1) prepare the electric leading-out structure of sensor chip to be measured and measure its stress, described sensor chip to be measured (16) front is provided with pad (9) and is positioned at the metal solder joint (10) on pad (9); This electric leading-out structure also comprises the flexible base, board (14) being provided with pad and interconnection line, and described sensor chip to be measured is welded on the pad of flexible base, board (14) by metal solder joint (10) upside-down mounting; Realize electricity by the pad of flexible base, board (14) by bonding wire (15) to draw;
2) described sensor chip to be measured (16) back side is also provided with pad and is positioned at the metal solder joint on this pad;
3) by step 2) structure that obtains afterwards adopts the method for flip chip bonding to realize with the interconnection of pcb board (18) and the stress measured now;
4) comparison step 1) and step 3) the middle stress intensity obtained, just can obtain the value introducing stress in flip chip bonding interconnection process.
The invention has the advantages that: stress/temperature sensor is welded in the upper of flexible base, board by upside-down mounting, the electricity realizing transducer is drawn, and the problem of demarcating before solving strain gauge encapsulation, can measure the absolute stress introduced in encapsulation technology.And by temperature sensor measurement temperature, obtain the temperature variant rule of encapsulation stress, realize the real-time online measuring of encapsulation stress and temperature.
Accompanying drawing explanation
Fig. 1 is the front value of encapsulation of transducer routine and the schematic diagram of rear value scaling method.Fig. 1 a is front value instrumentation plan, and 1 is probe, and 2 is sensor chip, the schematic diagram of value measurement method after Fig. 1 b, and 3 is metal lead wire, and 4 is encapsulating package, and 5 is metal bonding wire, and 6 is substrate.
Fig. 2 is the profile of the temperature/strain gauge be produced on soi wafer.7 is bottom silicon, and adopt the basic technology of micro electronmechanical processing to be produced in the top layer silicon above insulating barrier 8 by temperature sensor 11, P type strain gauge 12 and N-type strain gauge 13,9 is metal pad, and 10 is metal solder joint.
Fig. 3 is the vertical view of sensor element (being respectively temperature sensor 11, P type strain gauge 12 and N-type strain gauge 13).
Fig. 4 the present invention is based on the structural representation that flexible base, board realizes temperature/strain gauge electricity extraction, soi wafer makes sensor element 11,12 and 13, realize interconnecting with flexible base, board 14 by metal pad 9 and salient point 10, and realize electricity extraction by bonding wire 15.
Fig. 5 is the vertical view of the flexible base, board being made into comb structure, sensor chip 16 to be measured is produced on the increment of flexible base, board 14.
Fig. 6 for analog chip for measure epoxy resin cure produce the schematic diagram of stress.16 for realizing the sensor chip to be measured that electricity is drawn, and 17 is epoxy resin, and 18 is pcb board (Printed Circuit board).
Fig. 7 by test chip in real-time online measuring Curing Process of Epoxy the schematic diagram of introducing stress.19 is baking oven.
Fig. 8 is test chip introduces stress schematic diagram for measuring flip chip bonding interconnection process.
Fig. 9 is resistance bridge structural representation, stress or temperature sensor resistance 20 are connected by the metallic resistance 22 that plain conductor 21 is identical with three resistances, form resistance bridge, electric bridge a, b two ends are connected respectively to the positive and negative electrode of DC power supply 23 by wire 21, the positive and negative electrode of universal instrument 24 is received at c, d two ends respectively.
Embodiment
Embodiments of the invention are further illustrated below in conjunction with accompanying drawing.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Refer to shown in Fig. 4, the invention provides the electric leading-out structure of sensor chip to be measured, described sensor chip 16 to be measured is provided with pad 9 and is positioned at the metal solder joint 10 on pad 9; This electric leading-out structure also comprises the flexible base, board 14 being provided with pad and interconnection line, and described sensor chip to be measured is welded on the pad of flexible base, board 14 by metal solder joint 10 upside-down mounting; Realize electricity by the pad of flexible base, board 14 by bonding wire 15 to draw.Described sensor chip to be measured comprises substrate, preparation strain gauge 12,13 over the substrate and temperature sensor 11.
The present invention adopts flexible base, board 14 strain gauge and temperature sensor to be realized electricity and draws, and it can be used as analog chip to adopt technology to be packaged to encapsulate, and is obtained the stress of this encapsulation technology introducing by the STRESS VARIATION before and after test package.The present invention is used for the temperature survey before and after sensor chip encapsulation by temperature sensor, obtain the temperature variant curve of output before and after strain gauge encapsulation respectively, the temperature variant rule of encapsulation stress just can be obtained by the curve of output compared before and after encapsulation, therefore, this transducer also can be used for the real-time online measuring of encapsulation stress and temperature.
It is by making metal solder joint 10 on the pad of sensor chip that described temperature/stress sensor chip realizes the method that electricity draws, and its upside-down mounting to be welded in flexible base, board realizes.Before and after described encapsulation, the output of transducer is voltage output.
Described stress/temperature sensor is produced on (100) silicon chip or SOI sheet (Silicon On Insulator), ensure that and the consistency of silicon chip crystal face that adopts in IC manufacturing.Strain gauge is 10 by doping content
15/ cm
3to 10
19/ cm
3the piezo-resistance that the boron of scope and phosphorus are made or MOS device, and temperature-sensing element (device) is the metal platinum (Pt) of deposit thickness 50 nanometer to 200 nanometer range.
Described flexible base, board is by making metal pad and interconnection line on poly-constitution imines film, then the flexible film plate of formation is peeled off, also can be the flexible base, board FPC (Flexible Printed Circuit Board) of business, its thickness is the scope of 0.1mm to 2mm, the feature of flexible base, board is very soft, collapsible, there is very strong elasticity, so this stress introducing generation in stress/temperature sensor chip flip chip bonding of adagio is very little.
The impact of flexible base, board can be reduced further by flexible base, board being made into comb shape, Fig. 5 is the vertical view of the flexible base, board being made into comb structure, sensor chip 16 to be measured is produced on the sawtooth end of flexible base, board 14, and flexible base, board sawtooth end is suspended in the air, and one end is fixed in addition.The stress major part of sensor chip to be measured is like this released, and reduces flexible base, board further to the impact of chip to be measured, thus the reliability of value test before improving encapsulation.
Application examples one
Traditional stress/array of temperature sensor needs the voltage before adopting probe station to encapsulate to export measurement, connect external measurement device by metal bonding wire after encapsulation and test the output of its voltage, stress intensity is calculated by comparing voltage output before and after encapsulation, and itself also introduce stress because probe when front value is measured is pressed onto on chip, before encapsulation there is error in value measurement, and the test mode difference before and after sensor package, therefore, the stress relative size that such method for measuring stress is introduced under can only being used for more different packaging technology condition, cannot realize in a certain potting process, introducing definitely accurately measuring of stress, and after achieving stress/temperature sensor electricity extraction based on flexible base, board, the output voltage that can realize before and after stress/array of temperature sensor encapsulation is accurately measured, and the voltage output before and after sensor package all completes based on flexible base, board, test mode is identical, therefore, the absolute stress that can realize introducing in a certain potting process is measured.Meanwhile, owing to measuring the temperature characteristics that strain gauge exports before packaging, by comparing the temperature characteristics that before and after encapsulation, strain gauge exports, may be used for measuring the temperature variant rule of encapsulation stress.
Fig. 4 is the structural representation adopting flexible base, board to realize stress/temperature sensor electricity extraction, Pt temperature sensor 11, P type strain gauge 12 and N-type strain gauge 13 are produced in the top layer silicon of SOI sheet, deposit thickness 100 nanometer of Pt metal, the doping content 10 of B and P
18/ cm
3.Implanted metal solder joint 10 on pad 9, and adopt the method for flip chip bonding to realize the interconnection with pad on flexible base, board 14, flexible base, board used is business FPC plate, and thickness is 0.15mm, and the electricity realizing stress/temperature sensor finally by bonding wire 15 is drawn.
Fig. 6 is the structural representation that stress/temperature sensor test wrapper epoxy resins paster introduces stress.After the chip 16 of stress/temperature sensor is realized electricity extraction based on adagio 14, outer meeting resistance forms resistance bridge, measures and the voltage of recording bridge output variation with temperature curve.After pulling down outer meeting resistance, chip to be attached on pcb board (Printed Circuitboard) 18 by epoxy resin and after drying, external identical resistance forms resistance bridge, measure and the voltage of recording bridge output variation with temperature curve, the curve compared before and after paster just can calculate absolute stress and the temperature variant rule of stress of epoxy resin cure introducing.
Fig. 9 is resistance bridge structural representation, stress or temperature sensor resistance 20 are connected by the metallic resistance 22 that plain conductor 21 is identical with three resistances, form resistance bridge, electric bridge a, b two ends are connected respectively to the positive and negative electrode of DC power supply 23 by wire 21, the positive and negative electrode of universal instrument 24 is received at c, d two ends respectively, and the voltage being carried out electric bridge before and after test package by universal instrument 24 is exported.
Application examples two
Traditional stress/array of temperature sensor is do not realize electricity to draw before packaging, can only be used for measuring the relative stress size introduced in packaging technology, the real-time online measuring introducing stress in encapsulation process cannot be realized, and after realizing electricity extraction based on flexible base, board stress/temperature sensor, may be used for the real-time online measuring of encapsulation stress and temperature.
Fig. 7 is the schematic diagram of this sensor chip real-time online measuring stress of application, stress/temperature sensor chip identical in exploration and application example one, after the chip 16 of stress/temperature sensor is realized electricity extraction based on adagio 14, outer meeting resistance forms resistance bridge, measures and the voltage of recording bridge output variation with temperature curve.After pulling down outer meeting resistance, adopt epoxy resin plaster by chip 16 back side of stress/temperature sensor on pcb board 18, put into baking oven 19, external identical resistance forms resistance bridge, measure and record voltage real-time in Curing Process of Epoxy and export and corresponding temperature, export the stress intensity that just can calculate solidification process and introduce in real time by the voltage before comparing voltage output real-time in solidification process and relevant temperature paster, thus realize the real-time online measuring introducing stress and temperature in Curing Process of Epoxy.
Application examples three
Fig. 8 is that temperature/stress sensor chip is for introducing the generalized section of stress intensity in analogue measurement flip chip bonding interconnection process, the manufacture method of temperature/strain gauge and identical in application examples one, just the back side of temperature/stress sensor chip 16 has also made pad 9 and metal solder joint 10, after realized temperature/strain gauge electricity extraction by flexible base, board 14, outer meeting resistance forms resistance bridge (ginseng Fig. 9), measures and the voltage of recording bridge output variation with temperature curve.After pulling down outer meeting resistance, the method of flip chip bonding is adopted by this analog chip to realize the interconnection with pcb board (Printed Circuit board) 18, external identical resistance forms resistance bridge, to measure and the voltage of electric bridge exports and variation with temperature curve after recording flip chip bonding, curve relatively before and after flip chip bonding just can calculate absolute stress and the temperature variant rule of stress of flip chip bonding introducing
The above-mentioned description to embodiment can understand and apply the invention for ease of those skilled in the art.Person skilled in the art obviously easily can make various amendment to these embodiments, and one principle described herein is applied in other embodiments and need not through performing creative labour.Therefore, the invention is not restricted to embodiment here, those skilled in the art are according to announcement of the present invention, and the improvement made for the present invention and amendment all should within protection scope of the present invention.
Claims (9)
1. an electric leading-out structure for sensor chip to be measured, is characterized in that: described sensor chip to be measured (16) is provided with pad (9) and is positioned at the metal solder joint (10) on pad (9); This electric leading-out structure also comprises the flexible base, board (14) being provided with pad and interconnection line, and described sensor chip to be measured is welded on the pad of flexible base, board (14) by metal solder joint (10) upside-down mounting; Realize electricity by the pad of flexible base, board (14) by bonding wire (15) to draw; Described flexible base, board (14) is comb shape; This flexible base, board (14) nose of comb is suspended in the air, and the other end is fixed; The upside-down mounting of described sensor chip to be measured (16) is welded in the nose of comb of this flexible base, board (14).
2. the electric leading-out structure of sensor chip to be measured as claimed in claim 1, is characterized in that: described sensor chip to be measured comprises substrate, preparation strain gauge (12,13) over the substrate and temperature sensor (11).
3. the electric leading-out structure of sensor chip to be measured as claimed in claim 2, is characterized in that: described substrate is (100) silicon chip or SOI sheet.
4. the electric leading-out structure of sensor chip to be measured as claimed in claim 2, is characterized in that: described strain gauge is 10 by doping content
15/ cm
3~ 10
19/ cm
3the piezo-resistance that the boron of scope and phosphorus are made or MOS device.
5. the electric leading-out structure of sensor chip to be measured as claimed in claim 2, is characterized in that: described temperature sensor is the metal platinum of deposit thickness 50 ~ 200 nanometer.
6. measure epoxy resin cure produce the method for stress, it is characterized in that, the method comprises the following steps:
1) prepare the electric leading-out structure of sensor chip to be measured and measure its stress;
2) epoxy resin is adopted to be attached on pcb board by above-mentioned electric leading-out structure;
3) baking step 2) after obtain structure;
4) measuring process 3) after stress;
5) calculation procedure 1) and step 4) stress difference, namely obtain the stress introduced of epoxy resin cure;
Described step 1) in the electric leading-out structure of sensor chip to be measured comprise sensor chip to be measured, described sensor chip to be measured (16) is provided with pad (9) and is positioned at the metal solder joint (10) on pad (9); This electric leading-out structure also comprises the flexible base, board (14) being provided with pad and interconnection line, and described sensor chip to be measured is welded on the pad of flexible base, board (14) by metal solder joint (10) upside-down mounting; Realize electricity by the pad of flexible base, board (14) by bonding wire (15) to draw; Described flexible base, board (14) is comb shape; This flexible base, board (14) nose of comb is suspended in the air, and the other end is fixed; The upside-down mounting of described sensor chip to be measured (16) is welded in the nose of comb of this flexible base, board (14).
7. as claimed in claim 6 measure epoxy resin cure produce the method for stress, it is characterized in that, described step 1) in measure its stress comprise: after a) obtaining electric leading-out structure, outer meeting resistance forms resistance bridge, measures and records the voltage output variation with temperature curve of this electric bridge; B), after pulling down described outer meeting resistance, adopt epoxy resin described electric leading-out structure to be attached to pcb board (18) and go up and dry; C) resistance bridge of external identical resistance formation, measure and the voltage recording this electric bridge exports variation with temperature curve, curve d) compared before and after paster obtains absolute stress that epoxy resin cure introduces and the temperature variant rule of stress.
8. real-time online measuring epoxy resin cure produce the method for stress, it is characterized in that, the method comprises the following steps:
1) electric leading-out structure of sensor chip to be measured is prepared;
2) epoxy resin is adopted to be attached on pcb board by above-mentioned electric leading-out structure;
3) by step 2) after obtain structure put into baking oven (19) toast;
4) real-time online measuring step 3 is carried out) stress that produces in process;
Described step 1) in the electric leading-out structure of sensor chip to be measured comprise sensor chip to be measured, described sensor chip to be measured (16) is provided with pad (9) and is positioned at the metal solder joint (10) on pad (9); This electric leading-out structure also comprises the flexible base, board (14) being provided with pad and interconnection line, and described sensor chip to be measured is welded on the pad of flexible base, board (14) by metal solder joint (10) upside-down mounting; Realize electricity by the pad of flexible base, board (14) by bonding wire (15) to draw; Described flexible base, board (14) is comb shape; This flexible base, board (14) nose of comb is suspended in the air, and the other end is fixed; The upside-down mounting of described sensor chip to be measured (16) is welded in the nose of comb of this flexible base, board (14).
9. introduce a method for stress in measuring transducer flip-chip interconnection process, it is characterized in that: the method comprises the following steps:
1) prepare the electric leading-out structure of sensor chip to be measured and measure its stress, described sensor chip to be measured (16) front is provided with pad (9) and is positioned at the metal solder joint (10) on pad (9); This electric leading-out structure also comprises the flexible base, board (14) being provided with pad and interconnection line, and described sensor chip to be measured is welded on the pad of flexible base, board (14) by metal solder joint (10) upside-down mounting; Realize electricity by the pad of flexible base, board (14) by bonding wire (15) to draw; Described flexible base, board (14) is comb shape; This flexible base, board (14) nose of comb is suspended in the air, and the other end is fixed; The upside-down mounting of described sensor chip to be measured (16) is welded in the nose of comb of this flexible base, board (14);
2) described sensor chip to be measured (16) back side is also provided with pad and is positioned at the metal solder joint on this pad;
3) by step 2) structure that obtains afterwards adopts the method for flip chip bonding to realize with the interconnection of pcb board (18) and the stress measured now;
4) comparison step 1) and step 3) the middle stress intensity obtained, just can obtain the value introducing stress in flip chip bonding interconnection process.
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| CN112649103B (en) * | 2020-12-03 | 2023-05-09 | 东南大学 | Chip temperature measurement system based on thin film metal thermal resistor |
| CN113097200B (en) * | 2021-03-09 | 2022-09-20 | 中国电子科技集团公司第二十九研究所 | Flip heat source chip and preparation method and application method thereof |
| CN113866603B (en) * | 2021-09-26 | 2024-01-30 | 安徽芯动联科微系统股份有限公司 | Wafer level testing device and method for MEMS pressure sensor chip |
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| CN1257209A (en) * | 1998-11-17 | 2000-06-21 | 埃皮技术公司 | Small interval contactor |
| CN101241039A (en) * | 2008-02-01 | 2008-08-13 | 苏州纳米技术与纳米仿生研究所 | Method and subassembly for testing two-sided chip photoelectric performance |
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| DE102010001023A1 (en) * | 2010-01-19 | 2011-07-21 | Robert Bosch GmbH, 70469 | sensor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1257209A (en) * | 1998-11-17 | 2000-06-21 | 埃皮技术公司 | Small interval contactor |
| CN101241039A (en) * | 2008-02-01 | 2008-08-13 | 苏州纳米技术与纳米仿生研究所 | Method and subassembly for testing two-sided chip photoelectric performance |
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