CN102957332B - Three-level power conversion device - Google Patents
Three-level power conversion device Download PDFInfo
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- CN102957332B CN102957332B CN201210280660.0A CN201210280660A CN102957332B CN 102957332 B CN102957332 B CN 102957332B CN 201210280660 A CN201210280660 A CN 201210280660A CN 102957332 B CN102957332 B CN 102957332B
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Abstract
The present invention relates to a three-level power conversion device. In a buffer circuit of a dual switch of the prior three-level conversion circuit, as a voltage clamp type buffer cannot be used, buffer losses increase, and the device is large and the conversion efficiency is low as a plurality of switch components are needed in the buffer. The dual switch of the three-level power conversion device is composed of a first semiconductor switch series-connected circuit and a second semiconductor switch series-connected circuit which are connected in parallel, the first semiconductor switch series-connected circuit is series-connected with a first semiconductor switch and a second semiconductor switch which are reversely connected in parallel with a diode, the second semiconductor switch series-connected circuit is series-connected with a third semiconductor switch and a fourth semiconductor switch which are reversely connected in parallel, and the voltage clamp type buffer is connected with the first and second semiconductor switch or the third and fourth semiconductor switch in parallel.
Description
Technical field
The present invention relates to the DC-AC conversion equipment of three level or the circuit constructive method of AC-DC conversion equipment, and the surge voltage suppression technology of thyristor.
Background technology
Figure 11 represents that the circuit of the prior art shown in patent documentation 1 is formed.Figure 11 represents single-phase or the amount of a phase of polyphase inverter (inverter).At this, so-called inverter is circuit direct current power being converted to alternating electromotive force, but as well-known, also may be action alternating electromotive force being converted to direct current power.The action, the function that are applicable to two aspects are below described.
The series circuit of the semiconductor switch (in this case IGBT:Integrated Gate BipolarTransistor) 5 and 6 that the series circuit of DC power supply 1 and 2, the series circuit of capacitor 3 and 4 and diode reverse are connected in parallel is connected in parallel.DC power supply 1 and 2 be connected in series and a little be connected with being connected in series of capacitor 3 and 4, a little be connected bidirectional switch with between being connected in series a little of semiconductor switch 5 and 6 above-mentioned being connected in series, above-mentioned bidirectional switch differential concatenation connects the semiconductor switch 7 and 8 being connected in antiparallel diode respectively.And the voltage clamp bit-type buffer be made up of diode 202, capacitor 201 and resistance 203 is connected to semiconductor switch 8.In such formation, DC power supply 1 with 2 voltage E1 with E2 generally as identical value.Bidirectional switch can control forward/ON/OFF of the electric current in reverse two directions.
In fig. 11, the current potential of ac output end U point is equal with the current potential of the positive pole P point of DC power supply during semiconductor switch 5 conducting, equal with the current potential of N point during semiconductor switch 6 conducting, also equal with the current potential of M point when semiconductor switch 7 and 8 conducting.That is, this circuit is the three level change-over circuit that according to the conducting state of each semiconductor switch, three kinds of voltage levels can be outputted to U point.The feature of this circuit is, semiconductor switch 7,8 withstand voltage forming bidirectional switch is withstand voltage 1/2nd of semiconductor switch 5,6 just.Namely, when semiconductor switch 6 conducting, voltage E1+E2 between DC power supply PN is applied on semiconductor switch 5, when semiconductor switch 5 conducting, voltage E1+E2 similarly between DC power supply PN is applied on semiconductor switch 6, on the other hand, when semiconductor switch 5 conducting, only the voltage E1 of DC power supply 1 is applied on semiconductor switch 7, when semiconductor switch 6 conducting, only the voltage E2 of DC power supply 2 is applied on semiconductor switch 8, there is not the pattern applying direct current power source voltage E1+E2.
Symbol 100 ~ 105 is the stray inductances (hereinafter referred to as " distribution inductance ") be present on distribution.As well-known, during each semiconductor switch cut-off current, the voltage (hereinafter referred to as " surge voltage ") proportional with current changing rate appears on distribution inductance, and this voltage is applied to semiconductor switch in the mode be added on direct voltage (E1, E2 or E1+E2) under most of the cases.The overvoltage becoming semiconductor switch due to this voltage destroys, so be necessary to suppress it.For this reason, buffer circuit is used.
The buffer circuit example of Figure 11 is voltage clamp bit-type buffer, and itself and semiconductor switch 8 are connected in parallel the series circuit of capacitor 201 and diode 202, is connected in series a little is connected with resistance 203 at this between the negative pole N of DC power supply.Capacitor 201 is connected to the two ends of DC power supply 2 by resistance 203, therefore stably charges with the voltage E2 of DC power supply 2 to capacitor 201.Such as, when semiconductor switch 8 blocks with the electric current of the path flow of the diode of M point → distribution inductance 104 → semiconductor switch 8 → semiconductor switch 7 → distribution inductance 105 → U point, electric current continue with the path flow of diode → distribution inductance 105 → U point of M point → distribution inductance 104 → capacitor 201 → diode 202 → semiconductor switch 7, distribution inductance 104 with 105 current changing rate minimizing compared with the situation not having buffer circuit.
At this moment, the both end voltage of semiconductor switch 8 is equal with the voltage Vs1 of capacitor 201 substantially.By this action, capacitor 201 is charged, and voltage Vs1 is higher than the voltage E2 of DC power supply 2.At this moment, the electric current flowed out from U point keeps certain because of the inductance of load or AC reactor (reactor) (all not shown) before and after switch.Therefore, electric current relatively in above-mentioned path reduces, the diode current flow of semiconductor switch 6, and with the electric current that the supply of the path of semiconductor switch 6 → distribution inductance 103 → U point and reducing portion are minute suitable, therefore U point current potential is roughly equal with N point (negative pole) current potential.In this condition, the voltage difference of the voltage Vs1 of capacitor 201 and the voltage E2 of DC power supply 2 is as reactance voltage being applied to distribution inductance 104,105, therefore the electric current in above-mentioned path reduces, soon 0A is become, on the other hand, the electric current flowed by semiconductor switch 6 is equal with the output current from U point, and the change of current terminates.
After this, with the path gradual discharge of capacitor 201 → distribution inductance 104 → DC power supply 2 → resistance 203 → capacitor 201, the voltage Vs1 of capacitor 201 becomes the voltage E2 of DC power supply 2 again.This buffer is known by people as voltage clamp bit-type RCD buffer.Diagram is omitted, and semiconductor switch 5 and 6 also can be suitable for same buffer.
On the other hand, for semiconductor switch 7, be suitable for voltage clamp bit-type RCD buffer very difficult, the protection for surge voltage is very difficult.Its reason is described with reference to Figure 12.Figure 12 is situation voltage clamp bit-type RCD buffer being arranged on semiconductor switch 7.In the action of semiconductor switch 5 and 7 alternate conduction, in figure, A point (tie point of semiconductor switch 7 and 8) is equal with M point current potential, can carry out the action identical with Figure 11.
On the other hand, in the action of semiconductor switch 6 conducting, the reverse conducting of semiconductor switch 7, A point becomes N point current potential, therefore carries out the charging of capacitor 204 via resistance 206, and the voltage Vs2 of capacitor 204 rises to E1+E2.Again conducting semiconductor switch 7,8 time, U point current potential gets back to M point current potential, and via resistance 206, capacitor 204 discharges, and therefore the voltage Vs2 of capacitor 204 is reduced to the voltage E1 of DC power supply 1.That is, the voltage Vs2 of capacitor 204 rises excessively, near the voltage E1 that the voltage of semiconductor switch 7 can not be limited in DC power supply 1, by the charging and discharging of capacitor 204 repeatedly, produces very large loss.
As buffer circuit, premised on large charging and discharging action, such as RC buffer etc. is known by people, and also goes for the part that potential change occurs like this, but, the performance of general suppression surge voltage is inferior to voltage clamp bit-type buffer, and the loss that charging and discharging causes increases.Therefore, need the withstand voltage height of semiconductor switch, as mentioned above, withstand voltage 1/2nd advantages just of the semiconductor switch between the withstand voltage PN for being connected to DC power supply forming the semiconductor switch of bidirectional switch suffer damage.
As a kind of means of head it off, there is the circuit shown in Figure 13.It is the circuit shown in patent documentation 3 in bidirectional switch portion buffer being applicable to three level change-over circuit shown in patent documentation 2.In fig. 13, bidirectional switch portion is made up of the semiconductor switch 9 ~ 12 and capacitor 13 being connected in antiparallel diode respectively.By the series circuit of semiconductor switch 9 and 10, and the series circuit of semiconductor switch 11 and 12 is connected in parallel, and forms bidirectional switch, capacitor 13 and above-mentioned series circuit is connected in parallel, forming circuit.
When conducting bidirectional switch portion, apply Continuity signal at the grid of semiconductor switch 9 and 11 or 10 and 12.Conducting when semiconductor switch 9 and 10,11 and 12 is different.As described later, this is the unnecessary electric discharge in order to avoid capacitor 13.
Then, the action of this circuit is described.First, become the switch motion of capacitor 13 because of last time, and be charged to the state of the voltage equal with the voltage E2 of DC power supply 2.Electric current is such as with the path flow of the diode of the M of DC power supply point → distribution inductance 104 → semiconductor switch 12 → semiconductor switch 10 → distribution inductance 105 → U point, when electric current being blocked by the disconnection of semiconductor switch 12, electric current continues with the path flow of the diode of the diode → capacitor 13 → semiconductor switch 10 of M point → distribution inductance 104 → semiconductor switch 11 → distribution inductance 105 → U point, capacitor 13 is charged, voltage rise, current changing rate is inhibited simultaneously.At this moment, illustrate identical with Figure 11, the diode current flow of semiconductor switch 6, U point current potential is roughly equal with N point current potential.The voltage difference of the voltage of capacitor 13 and the voltage E2 of DC power supply 2 is as being applied to distribution inductance 104 and 105 to reactance voltage, therefore above-mentioned electric current reduces, and becomes 0A soon.
Then, during the grid of conducting semiconductor switch 10 and 11, discharge with the path of diode → distribution inductance 103 → U point → distribution inductance 105 → semiconductor switch 10 → capacitor 13 of the negative pole N → distribution inductance 101 → semiconductor switch 6 of capacitor 13 → semiconductor switch 11 → distribution inductance 104 → M point → DC power supply 2 → DC power supply, the voltage of capacitor 13 is reduced to the voltage E2 of DC power supply 2.Note the timing (timing, moment) that electric discharge terminates, disconnect semiconductor switch 10 and 11.In the circuit of Figure 12, when discharge path is normal, (always) is connected with DC power portion, on the other hand, in Figure 13 circuit, can according to the ON/OFF state of semiconductor switch 9 ~ 12, management connects the timing (timing, time) of discharge path, therefore, it is possible to the defective mode avoiding Figure 12 circuit such.
Further, in the circuit, become semiconductor switch 9 and 10,11 and 12 formation be connected in series.This is formed in circuit for power conversion is the most general form, and the module etc. tandem tap being loaded a packaging part (package) is also commercially extensively sold.Such module can be utilized also can to enumerate as advantage.When the circuit of Figure 11, not general type because differential concatenation connects and composes, so need to connect the module that two load elements in outside, or need to prepare special module.
But there is following shortcoming in the circuit of Figure 13.The voltage of capacitor 13 keeps equal with the voltage E1 of DC power supply 1 or the voltage E2 of DC power supply 2 substantially, and during semiconductor switch 9 and 10 or 11 and 12 conducting simultaneously, capacitor 13 discharges into 0V and produces very large loss, and therefore this action is improper.Therefore, the conducting in bidirectional switch portion by conducting semiconductor switch 9 and 11 or conducting 10 and 12 wherein a side carry out, do not carry out the action of whole conducting semiconductor switch 9 ~ 12.Namely, although this circuit is provided with bidirectional switch with two circuit in parallel, once only one party is used.Therefore, two parallel connections can not be used as prerequisite, the current capacity of each semiconductor switch is reduced to 1/2nd, therefore the total capacity of semiconductor switch becomes large, causes plant bulk to maximize, and price rises.
Prior art document
Patent documentation
[patent documentation 1] Japanese Unexamined Patent Publication 2010-288415 publication
[patent documentation 2] Japanese Patent Publication 63-38952 publication
[patent documentation 3] Japanese Unexamined Patent Publication 2000-358359 publication
Summary of the invention
The problem that invention will solve
As mentioned above, in the circuit of prior art is formed, because of not being suitable for voltage clamp bit-type buffer circuit, buffering loss becomes greatly, in order to form buffer circuit, needs multiple switch elements etc., therefore there is larger-scale unit, problem that conversion efficiency is low.Therefore, problem of the present invention is, provides and applicable circuit can form three-level power conversion device that is simple, that lose little buffer circuit.
For solving the method for problem
In order to solve above-mentioned problem, in the present invention first invention, relate to a kind of three-level power conversion device, DC power supply series circuit connected in series is connected with the first DC power supply and the second DC power supply, semiconductor switch series circuit connected in series is connected with the semiconductor switch that reverse parallel connection respectively has diode, described DC power supply series circuit and described semiconductor switch series circuit are connected in parallel, be connected in series a little between being connected in series a little of above-mentioned semiconductor switch series circuit at above-mentioned DC power supply series circuit, be connected with the bidirectional switch that can control bidirectional current ON/OFF, above-mentioned bidirectional switch is made up of the parallel circuits of the first semiconductor switch series circuit and the second semiconductor switch series circuit, described first semiconductor switch series circuit connected in series is connected with first and second semiconductor switch being connected in antiparallel diode respectively, described second semiconductor switch series circuit connected in series is connected with the 3rd and the 4th semiconductor switch being connected in antiparallel diode respectively, voltage clamp bit-type buffer is connected in parallel with first and second semiconductor switch above-mentioned or the above-mentioned 3rd and the 4th semiconductor switch, above-mentioned voltage clamp bit-type buffer by the both end voltage clamper of semiconductor switch above-mentioned first or second direct current power source voltage.
In the three-level power conversion device of above-mentioned first invention in the present invention second invention, during above-mentioned bidirectional switch cut-off current, relative to be not connected in parallel current flowing above-mentioned voltage clamp bit-type buffer semiconductor switch control terminal supply cut-off signal, to be connected in parallel to current flowing above-mentioned voltage clamp bit-type buffer semiconductor switch control terminal supply cut-off signal be delayed by supply.
In the three-level power conversion device of the above-mentioned first or second invention in the present invention the 3rd invention, when the module being built-in with above-mentioned first semiconductor switch series circuit is connected in parallel multiple with the module being built-in with above-mentioned second semiconductor switch series circuit respectively, the alternately configuration in parallel of the module that will be built-in with above-mentioned first semiconductor switch series circuit and the module being built-in with above-mentioned second semiconductor switch series circuit.
In the three-level power conversion device in the above-mentioned first to the 3rd invention described in any one in the present invention the 4th invention, the semiconductor switch of the above-mentioned part be connected in series or form its part or all of semiconductor element, is accommodated in same module by each series connectors.
In the three-level power conversion device in above-mentioned first to fourth invention described in any one in the present invention the 5th invention, adopt following diode: the forward drop-out voltage of the diode be connected in antiparallel with the semiconductor switch being connected in parallel above-mentioned voltage clamp bit-type buffer, higher than the forward drop-out voltage of the diode be connected in antiparallel with the semiconductor switch not being connected in parallel above-mentioned voltage clamp bit-type buffer.
The present invention the 6th invention is in the three-level power conversion device in the above-mentioned first to the 5th invention described in any one, adopt the diode of following characteristic: the reverse recovery current of the diode be connected in antiparallel with the semiconductor switch being connected in parallel above-mentioned voltage clamp bit-type buffer, less than the reverse recovery current of the diode be connected in antiparallel with the semiconductor switch not being connected in parallel above-mentioned voltage clamp bit-type buffer.
In the present invention the 7th invention, relate to a kind of three-level power conversion device, DC power supply series circuit connected in series is connected with the first DC power supply and the second DC power supply, first semiconductor switch series circuit connects the first ~ four semiconductor switch being connected in antiparallel diode respectively according to the first ~ four semiconductor switch sequential series, described DC power supply series circuit and described first semiconductor switch series circuit are connected in parallel, above-mentioned second semiconductor switch and above-mentioned 3rd semiconductor switch be connected in series a little as ac terminal, second semiconductor switch series circuit connected in series is connected with the 5th and the 6th semiconductor switch being connected in antiparallel diode respectively, described second semiconductor switch series circuit is connected in parallel the series circuit of above-mentioned second semiconductor switch and above-mentioned 3rd semiconductor switch, being connected in series of above-mentioned second semiconductor switch series circuit a little to be connected with being connected in series of above-mentioned DC power supply series circuit, at above-mentioned 5th semiconductor switch and the 6th semiconductor switch, being provided with the voltage clamping being applied to these above-mentioned semiconductor switchs is the so-called voltage clamp bit-type buffer of the first direct current power source voltage or the second direct current power source voltage, and the buffer be directly connected with above-mentioned second semiconductor switch and above-mentioned 3rd semiconductor switch is not set, or the buffer fully little with above-mentioned voltage clamp bit-type buffer phase specific capacity is set, when above-mentioned first and second semiconductor switchs of conducting when above-mentioned ac terminal exports positive voltage, above-mentioned third and fourth semiconductor switch of conducting when exporting negative voltage, the conducting above-mentioned second respectively when exporting no-voltage, 3rd, 5th and the 6th semiconductor switch, when moving on to positive voltage from no-voltage output and exporting, carry out first applying cut-off signal to above-mentioned 3rd semiconductor switch, then cut-off signal is applied to the above-mentioned 5th and the 6th semiconductor switch, after this above-mentioned first semiconductor switch is applied to the action of Continuity signal, when moving on to negative voltage from no-voltage output and exporting, carry out first applying cut-off signal to above-mentioned second semiconductor switch, then cut-off signal is applied to the above-mentioned 5th and the 6th semiconductor switch, after this 4th semiconductor switch is applied to the action of Continuity signal.
The present invention the 8th invention is in the three-level power conversion device of above-mentioned 7th invention, above-mentioned first and the 4th semiconductor switch be made up of a branch road built-in module, second and third semiconductor switch above-mentioned is made up of two branch road built-in modules, above-mentioned 5th and the 6th semiconductor switch is made up of two branch road built-in modules, when being connected in parallel above-mentioned each module, close to the module configuring the module being built-in with two path built-ins of second and third semiconductor switch above-mentioned and two path built-ins being built-in with the above-mentioned 5th and the 6th semiconductor switch.
The present invention the 9th invention is in the three-level power conversion device of above-mentioned 7th invention, first and second semiconductor switch above-mentioned, above-mentioned 3rd and the 4th semiconductor switch, above-mentioned 5th and the 6th semiconductor switch is formed with two branch road built-in modules respectively, when being connected in parallel above-mentioned each module, the block configuration being built-in with the above-mentioned 5th and the 6th semiconductor switch is being built-in with between the module of first and second semiconductor switch above-mentioned and the module being built-in with the above-mentioned 3rd and the 4th semiconductor switch.
The present invention the tenth invention is in the three-level power conversion device of above-mentioned 7th to the 9th invention described in any one, above-mentioned second, third, the 5th, the 6th semiconductor switch is respectively equipped with parallel diode, the forward drop-out voltage of the parallel diode of second and third semiconductor switch above-mentioned is higher than the forward drop-out voltage of the parallel diode of the above-mentioned 5th and the 6th semiconductor switch.
The present invention the 11 invention is in the three-level power conversion device of above-mentioned 7th to the tenth invention described in any one, adopt the diode of following characteristic: the reverse recovery current of the parallel diode of second and third semiconductor switch above-mentioned, less than the reverse recovery current of the parallel diode of the above-mentioned 5th and the 6th semiconductor switch.
The following describes effect of the present invention:
In the present invention, the bidirectional switch of the three-level power conversion device of bidirectional switch is used to be made up of the parallel circuits of the first semiconductor switch series circuit and the second semiconductor switch series circuit, described first semiconductor switch series circuit connected in series is connected with first and second semiconductor switch being connected in antiparallel diode respectively, described second semiconductor switch series circuit connected in series is connected with the 3rd and the 4th semiconductor switch being connected in antiparallel diode respectively, voltage clamp bit-type buffer is connected in parallel with first and second semiconductor switch above-mentioned or the above-mentioned 3rd and the 4th semiconductor switch, above-mentioned voltage clamp bit-type buffer by the both end voltage clamper of thyristor at the above-mentioned first or second direct current power source voltage.In addition, when being connected in parallel above-mentioned semiconductor switch series circuit, alternately configuration is provided with the series circuit of voltage clamp bit-type buffer and does not arrange the series circuit of buffer.
In addition, in the three-level power conversion device of neutral point clamper type, semiconductor switch and neutral point clamper diode reverse are connected in parallel, at each switch-linear hybrid voltage clamp bit-type buffer, do not need buffer maybe can make its minimization at the semiconductor switch be connected in parallel with it thus.
Consequently, voltage clamp bit-type buffer can be suitable for, reduce buffer circuit loss, bidirectional switch circuit is simplified, small-sized three-level power conversion device can be realized with low loss.
Accompanying drawing explanation
Fig. 1 is the circuit diagram representing first embodiment of the invention.
Fig. 2 is the circuit diagram representing second embodiment of the invention.
Fig. 3 is the distribution structure figure representing third embodiment of the invention.
Fig. 4 is the circuit diagram of the prior art for illustration of fourth embodiment of the invention.
Fig. 5 is the circuit diagram representing fourth embodiment of the invention.
Fig. 6 is the circuit diagram for illustration of fifth embodiment of the invention.
Fig. 7 is the structure chart for illustration of fifth embodiment of the invention.
Fig. 8 is the circuit diagram for illustration of sixth embodiment of the invention.
Fig. 9 is the structure chart for illustration of sixth embodiment of the invention.
Figure 10 represents the example of semiconductor module.
Figure 11 is the circuit diagram of the first embodiment representing prior art.
Figure 12 is the circuit diagram of the problem of the second embodiment for illustration of prior art.
Figure 13 is the circuit diagram of the 3rd embodiment representing prior art.
In figure, symbolic significance is as follows:
1,2-DC power supply
20,21,202,205,207,208-diode
3,4,13,201,204,209,210-capacitor
5 ~ 12-semiconductor switch (IGBT)
13 ~ 18-MOSFET(Metal-Oxide-Semiconductor Field-EffectTransistor, MOSFET: mos field effect transistor)
203,206,211,212-resistance
207a ~ 207d-buffer module
15a ~ 15d, 17a ~ 17d, MD3, MD4-semiconductor module (in a module two branch roads)
MD1, MD2-semiconductor module (in a module branch road)
300 ~ 303, UB1, UB2, UPB1, UPB2, UNB1, UNB2-DP distributing pole (bar)
Embodiment
, with reference to accompanying drawing, the embodiment of the present invention is described below, in the examples below, although to inscape, kind, combination, position, shape, quantity, relative configuration etc. has done various restriction, these only exemplify, and the present invention is not limited thereto.
Main points of the present invention are as follows:
First main points are as follows: relate to three-level power conversion device, DC power supply series circuit and semiconductor switch series circuit are connected in parallel, described DC power supply series circuit connected in series is connected with DC power supply, described semiconductor switch series circuit connected in series is connected with semiconductor switch, what bidirectional switch is connected to above-mentioned DC power supply series circuit is connected in series a little between being connected in series a little of above-mentioned semiconductor switch series circuit, above-mentioned bidirectional switch is made up of the parallel circuits of the first semiconductor switch series circuit and the second semiconductor switch series circuit, described first semiconductor switch series circuit connected in series is connected with first and second semiconductor switch being connected in antiparallel diode respectively, described second semiconductor switch series circuit connected in series is connected with the 3rd and the 4th semiconductor switch being connected in antiparallel diode respectively.Be connected in parallel the voltage clamp bit-type buffer of the direct current power source voltage of the both end voltage clamper (clamp) of semiconductor switch to above-mentioned first or second with first and second semiconductor switch above-mentioned or the 3rd and the 4th semiconductor switch.
Second main points are as follows: DC power supply series circuit and the first semiconductor switch series circuit are connected in parallel, described DC power supply series circuit connected in series is connected with the first DC power supply and the second DC power supply, described first semiconductor switch series circuit is connected with the first ~ four semiconductor switch being connected in antiparallel diode respectively according to the first ~ four semiconductor switch sequential series, above-mentioned second semiconductor switch and above-mentioned 3rd semiconductor switch be connected in series a little as ac terminal, second semiconductor switch series circuit connected in series is connected with the 5th and the 6th semiconductor switch being connected in antiparallel diode respectively, this the second semiconductor switch series circuit is connected in parallel the series circuit of above-mentioned second semiconductor switch and above-mentioned 3rd semiconductor switch, connect above-mentioned second being connected in series a little of semiconductor switch series circuit and being connected in series a little of above-mentioned DC power supply series circuit.At above-mentioned 5th semiconductor switch and the 6th semiconductor switch, be provided with so-called voltage clamp bit-type buffer, by the voltage of voltage clamping to the first DC power supply that is applied to above-mentioned semiconductor switch or the voltage of the second DC power supply, and do not establish the buffer that is directly connected with above-mentioned second semiconductor switch and above-mentioned 3rd semiconductor switch or arrange and buffer that above-mentioned voltage clamp bit-type buffer phase specific capacity is fully little.When conducting first and second semiconductor switch above-mentioned when above-mentioned ac terminal exports positive voltage, conducting the above-mentioned 3rd and the 4th semiconductor switch when exporting negative voltage.When exporting no-voltage respectively conducting above-mentioned second, third, the 5th and the 6th semiconductor switch, when moving on to positive voltage from no-voltage output and exporting, first cut-off signal is applied to above-mentioned 3rd semiconductor switch, then cut-off signal is applied to the above-mentioned 5th and the 6th semiconductor switch, after this Continuity signal is applied to above-mentioned first semiconductor switch.When moving on to negative voltage from no-voltage output and exporting, first cut-off signal is applied to above-mentioned second semiconductor switch, then cut-off signal is applied to the above-mentioned 5th and the 6th semiconductor switch, after this Continuity signal is applied to the 4th semiconductor switch.
[embodiment 1]
Fig. 1 represents first embodiment of the invention.The formation of integrated circuit is in the circuit of prior art shown in Fig. 6, removes capacitor 13, voltage clamp bit-type buffer is connected to semiconductor switch 11 and 12.At this, as semiconductor switch, it is the embodiment using IGBT.In FIG, the series circuit of diode 207 and capacitor 209 is parallel-connected to semiconductor switch 11, is connected in series some contact resistance 211 between the positive pole (P point) of DC power supply 1 at diode 207 and capacitor 209.And the series circuit of diode 208 and capacitor 210 is parallel-connected to semiconductor switch 12, be connected in series some contact resistance 212 between the negative pole (N point) of DC power supply 2 at diode 208 and capacitor 210.In addition, symbol 106,107 is distribution inductance of inside, bidirectional switch portion.
In this circuit, during conducting bidirectional switch portion, conducting semiconductor switch 9 ~ 12 simultaneously.Such as, from M point in the current path of U point, there is the path from diode → distribution inductance 106 → semiconductor switch 9 → distribution inductance 105 → U point of M point → distribution inductance 104 → semiconductor switch 11, and the path of diode → distribution inductance 105 → U point from M point → distribution inductance 104 → semiconductor switch 12 → distribution inductance 107 → semiconductor switch 10, electric current respectively flows 1/2nd.Disconnect semiconductor switch 12 time identical with the explanation of background technology for the protection act of surge voltage.
On the other hand, when disconnecting semiconductor switch 9, the electric current of distribution inductance 106 sharply reduces, the electric current of the amount reduced increases in the path of the diode of distribution inductance 104 → capacitor 210 → diode 208 → distribution inductance 107 → semiconductor switch 10, therefore the electric current of distribution inductance 107 sharply increases, and the voltage proportional with this current changing rate is applied on semiconductor switch 9.But, even if for this current component, also can suppress the rate of change of distribution inductance 104,105, therefore suppress the surge voltage caused thus.Therefore, if the inductance value of distribution inductance 106,107 is fully little, being then applied to the surge voltage of semiconductor switch 9, i.e. (voltage of the voltage+distribution inductance 107 of the voltage+distribution inductance 106 of capacitor 210) can suppress in allowed band.
In other words, at this moment the buffer being equivalent to semiconductor switch 12 by distribution inductance 106, semiconductor switch 11,10, distribution inductance 107 is connected in semiconductor switch 9 in parallel, although the increase part of the surge voltage having distribution inductance 106,107 to cause, the surge voltage of semiconductor switch 9 is also because the buffer of semiconductor switch 12 is inhibited.And the cut-off current of semiconductor switch 9 is 1/2nd of load current, therefore favourable to suppression surge voltage.
Even now, when the surge voltage of semiconductor switch 9 exceedes permissible value, can be avoided by following method.When disconnecting bidirectional switch portion, semiconductor switch 9 is first made first to disconnect than other semiconductor switch.Consequently, although produce voltage at distribution inductance 106,107, due to semiconductor switch 12 conducting, so surge voltage is (voltage of the voltage+107 of distribution inductance 106), significantly reduce than above-mentioned.Then, semiconductor switch 12 is disconnected.Until disconnect during semiconductor switch 12, flow total current in the path of the diode of semiconductor switch 12 → semiconductor switch 10, but due to the time short, so it is little of unquestioned degree to generate heat.In addition, semiconductor switch 12 blocks total current, but is having buffer close to place, and therefore surge voltage also can suppress.
[embodiment 2]
Fig. 2 represents second embodiment of the invention.Fig. 2 is the example using MOSFET at semiconductor switch.Main circuit is formed and buffer forms identical with Fig. 1.Identical with Fig. 1, when conducting bidirectional switch part, conducting MOSFET15 ~ 18 simultaneously.Under MOSFET conducting state, there is the resistance characteristic of voltage drop and current in proportion.Also there is the characteristic of reverse also conducting when applying grid voltage.Therefore, the little MOSFET of conducting resistance, such as superjunction close (SuperJunction) MOSFET or by SiC(carborundum) in the MOSFET that formed, compared with the forward drop of parallel diode (parasitic diode or external diode), determine that revers voltage falls by the voltage drop of MOSFET body.In the circuit in fig. 1, although bidirectional switch portion carries out two actions arranged side by side, no matter in which path, as voltage drop, the amount of the forward drop one of the amount+diode of the saturation voltage one of IGBT is produced.The saturation voltage of IGBT, the forward drop of diode have the constant voltage composition not relying on electric current, therefore in two actions arranged side by side, although minimizing falls in total voltage, can not become 1/2nd.
On the other hand, in Fig. 2 circuit, the series circuit of two MOSFET becomes two and is connected in parallel, therefore due to above-mentioned resistance characteristic, total voltage reduce to MOSFET mono-amount, namely become 1/2nd in bidirectional switch among conducting MOSFET15 and 17 or 16 and 18 when a side, conduction losses also becomes 1/2nd.Otherwise, consider above-mentioned situation, the conducting resistance can selecting MOSFET15 ~ 18 be two times, namely the chip area of energized part be a side of 1/2nd.Therefore, the bidirectional switch of relative Figure 11 is formed, and seem that parts number doubles, but total semiconductor amount does not change.
[embodiment 3]
Fig. 3 represents third embodiment of the invention.Fig. 3 represents the minimizing method of the distribution inductance 106,107 of Fig. 1 or Fig. 2.Fig. 3 (a) is the formation of semiconductor module as used herein, become by two series connection MOSFET(IGBT or other semiconductor chip also can) structure be accommodated in the formation of a packaging part.Fig. 3 (b) is its configuration and wiring method, and 15a ~ 15d is the MOSFET15 of Fig. 2, the module of 16 parts, and 17a ~ 17d is the MOSFET17 of Fig. 2, the semiconductor module of 18 parts, is connected in parallel four respectively at this.
And 207a ~ 207d is buffer module diode 207 and capacitor 209 and diode 208 and capacitor 210 being accommodated in a module, and 300 ~ 303 is DP distributing pole (bar).300 is DP distributing poles of the P terminal being connected in parallel eight modules, 301 is DP distributing poles of the N terminal being connected in parallel eight modules, 302 is be connected in parallel the DP distributing pole that four do not connect the U terminal of the module of buffer, and 303 is be connected in parallel the DP distributing pole that four are connected with the AC terminal of the module of buffer 207a ~ 207d.DP distributing pole 303 is connected with the M point of DC power supply, and DP distributing pole 302 is connected with the interchange end U point of change-over circuit.About the part (DP distributing pole 300 and 301, DP distributing pole 302 and 303) that the DP distributing pole of module is overlapping up and down, by being sandwiched in therebetween by not shown insulating material, avoid short circuit.
By alternately configuring the module of MOSFET15, the module of 16 sides and MOSFET17,18 sides, making to be respectively the shortest from MOSFET15,16 side form blocks to the distance of buffer, by making distribution inductance minimize, suppressing surge voltage.Moreover, by making DP distributing pole have lap each other, the magnetic flux produced separately when current flows being cancelled each other, compared with the situation of DP distributing pole individualism, can significantly reduce its inductance.This is the known methods of people.
But, produce surge voltage except when semiconductor switch disconnects, also have when diode reverse recovery.Such as, the situation that electric current flows out from U point in Fig. 2 circuit is considered.As conducting MOSFET13, electric current flows to outside with the path of MOSFET13 → distribution inductance 102 → U point.When MOSFET13 disconnects, by conducting MOSFET15 and 18 in advance, electric current is with the path of M point → distribution inductance 104 → MOSFET17 → distribution inductance 106 → MOSFET15 → distribution inductance 105 → U point, and the path flow of M point → distribution inductance 104 → MOSFET18 → distribution inductance 107 → MOSFET16 → distribution inductance 105 → U point.At this moment, as mentioned above, give Continuity signal to whole grids of MOSFET15 ~ 18, electric current is all in MOSFET bulk flow.Then, again when conducting MOSFET13, cut-off signal (so-called Dead Time (deadtime) is set) is given to the grid of MOSFET16 and 17 in advance.This is owing under the state of conducting during conducting MOSFET13, can make the cause of DC power supply 1 short circuit in MOSFET13,15,17 and 13,16,18 as MOSFET16,17 at forward.Therefore, in this time, MOSFET16,17 electric current parallel diode effluent move.
By conducting MOSFET13, to MOSFET16,17 parallel diode part apply back voltage, cut-off current.Generally, if apply back voltage when diode flowing forward current, then short-time current (reverse recovery current) blocks after reverse flow, produces so-called reverse recovery phenomena.In the above cases, electric current with MOSFET13 → distribution inductance 102 → distribution inductance 105 → MOSFET16(diode against conducting) path of → distribution inductance 107 → MOSFET18 → distribution inductance 104 → M point, and MOSFET13 → distribution inductance 102 → distribution inductance 105 → MOSFET15 → distribution inductance 106 → MOSFET17(diode is against conducting) path flow of → distribution inductance 104 → M point, the diode of MOSFET16 and the diode of MOSFET17 block this electric current.
Now, when disconnecting (turn-off) semiconductor switch, produce surge voltage at distribution inductance equally.Surge voltage for MOSFET17 suppresses with close buffer, but it is large for the surge voltage ratio of MOSFET16.Blocking of diode can not the control time at grid, therefore can not block MOSFET16 in advance as mentioned above.About MOSFET15 too.So, reduce surge voltage with following methods.
First method is that the forward drop of parallel diode by making MOSFET15 and 16 is larger than the forward drop of the parallel diode of MOSFET17 and 18, makes current convergence in MOSFET17 or 18 sides in Dead Time.When forward current diminishes or become 0A, reverse recovery current also diminishes or disappears, therefore, it is possible to avoid blocking because of above-mentioned the surge voltage caused.
Second method is compared with the parallel diode of MOSFET17 and 18, uses the side that reverse recovery current is little in the parallel diode of MOSFET15 and 16.
In fact, the diode that reverse recovery current is little has the large tendency of forward drop, therefore mostly also by first method and second method.
[embodiment 4]
Fig. 5 represents fourth embodiment of the invention.As three-level inverter circuit, shown in Fig. 4, be called that the circuit of neutral point clamp is known by people.The series circuit of DC power supply 1 and 2 and the series circuit of semiconductor switch (IGBT) 5,9,10,6 are connected in parallel, and, at the tie point of semiconductor switch 5 and 9 and these two tie points of tie point of 10 and 6 and between DC power supply 1 and the tie point of 2, connect diode 20 or 21 respectively.Capacitor 3 and 4 is also referred to as voltage-dividing capacitor.
In Figure 5, conducting semiconductor switch 5 and 9 time, export P point current potential at U point, conducting semiconductor switch 9 and 10 time, export M point current potential at U point, conducting semiconductor switch 6 and 10 time, export N point current potential at U point.At this, semiconductor switch 9 with 10 two ends be all connected with potential change point, be therefore difficult to be suitable for the buffer of clamper at the voltage of the capacitor 3 or 4 as DC power supply.In the past, the RC buffer etc. of the such charging/discharging type represented in such as Japanese Unexamined Patent Publication 2003-52178 publication is used.
Fig. 5 represents the Application Example of the present invention of this circuit formation relatively.Be provided with semiconductor switch 11,12, replace the diode 20,21 of Fig. 4, the voltage clamp bit-type buffer be made up of diode 207, capacitor 209 and resistance 211 is connected with semiconductor switch 11, and the voltage clamp bit-type buffer be made up of diode 208, capacitor 210 and resistance 212 is connected with semiconductor switch 12.
Below action is described.When making U point current potential equal with M point current potential, the whole conducting of semiconductor switch 9,10,11,12.Flow to the pattern of M point at electric current from U point, current distributing is the path of the diode → semiconductor switch 11 → M point by U point → semiconductor switch 9, and the path of diode → M point by U point → semiconductor switch 10 → semiconductor switch 12.
The state of such as semiconductor switch 5 and 9 conducting is moved on to from this state, when U point exports P current potential (E1), first cut-off semiconductor switch 10.At this moment, semiconductor switch 11 is conducting state, and therefore semiconductor switch 10 can block to apply voltage 0V.As its result, by the current commutation of the path flow of the diode of semiconductor switch 10 → semiconductor switch 12 to the path of the diode → semiconductor switch 11 of semiconductor switch 9.Then, semiconductor switch 11,12 is disconnected.At this moment; become voltage between P-M and be applied to semiconductor switch 11; and two of cut-off semiconductor switch 10 times of electric currents, but owing to being provided with the voltage clamp bit-type buffer be made up of diode 207, capacitor 209 and resistance 211 close to place, therefore protection is avoided damaging by surge voltage.
In addition, conducting semiconductor switch 9 ~ 12 is described, the state being zero potential from U point moves on to semiconductor switch 10,6 conducting state, the example under U point exports N current potential (-E2) situation.The pattern that electric current flows from M point to U point, current distributing is the path of the diode → semiconductor switch 9 → U point by M point → semiconductor switch 11, and the path of diode → U point by M point → semiconductor switch 12 → semiconductor switch 10.In this condition, first semiconductor switch 9 is disconnected.At this moment, because semiconductor switch 12 is conducting state, therefore semiconductor switch 9 can disconnect to apply voltage 0V.As its result, by the current commutation of the path flow of the diode → semiconductor switch 9 of semiconductor switch 11 to the path of the diode of semiconductor switch 12 → semiconductor switch 10.Then, semiconductor switch 11,12 is disconnected.At this moment; become voltage between M-N and be applied to semiconductor switch 12; and two of cut-off semiconductor switch 9 times of electric currents, but owing to being provided with the voltage clamp bit-type buffer be made up of diode 208, capacitor 210 and resistance 212 close to place, therefore, it is possible to protection is avoided damaging by surge voltage.About beyond above-mentioned other pattern too, semiconductor switch is avoided damaging by surge voltage by the protection of voltage clamp bit-type buffer.
Identical with Fig. 2, semiconductor switch can use MOSFET.In addition, for the Reverse recovery action of the parallel diode of semiconductor switch 9 ~ 12, same as described above, by at semiconductor switch 9 and 10, between 11 and 12, make the forward drop-out voltage of diode have difference, or make reverse recovery current have difference, identical effect can be played.
[embodiment 5]
Fig. 6 and Fig. 7 represents fifth embodiment of the invention.Use two kinds of semiconductor modules: the semiconductor module (in a module branch road) being built-in with a branch road (arm) shown in Figure 10 (a); With the semiconductor module (in a module two branch roads) being built-in with two branch roads shown in Figure 10 (b).Configuration and the distribution structure of the semiconductor switch for realizing three-level power conversion device are proposed.In the circuit diagram of Fig. 6, semiconductor switch 5 and 6 is made up of semiconductor module MD1, MD2 of being built-in with a branch road respectively.And semiconductor switch 9 and 10 is made up of the semiconductor module MD3 being built-in with two branch roads, semiconductor switch 11 and 12 is made up of the semiconductor module MD4 being built-in with two branch roads.
Fig. 7 represents configuration when being connected in parallel three each semiconductor modules and distribution structure example.At this, MD1a ~ MD1c and MD2a ~ MD2c is the semiconductor module being built-in with a branch road, and MD3a ~ MD3c and MD4a ~ MD4c is the semiconductor module being built-in with two branch roads, and 207a ~ 207c is voltage clamp bit-type buffer.And UB1 is ac terminal DP distributing pole, UPB1, UNB1 are the DP distributing poles of neutral point clamping diode circuit, and MB1 is the DP distributing pole of zero pole.About the part (DP distributing pole UB1 and MB1, DP distributing pole UPB1 and UNB1) that the DP distributing pole of module is overlapping up and down, by being sandwiched in therebetween by not shown insulating material, avoid short circuit.In order to reduce the distribution inductance between module MD3a and MD4a, effectively suppressing surge voltage, being connected with MD4a and the close configuration of module MD3a of buffer 207a.The formation of module MD3b, MD4b and buffer 207b is also identical with the formation of module MD3c, MD4c and buffer 207c.
[embodiment 6]
Fig. 8 and Fig. 9 represents sixth embodiment of the invention.Using the semiconductor module (in a module two branch roads) being built-in with two branch roads shown in Figure 10 (b), proposing configuration and the distribution structure of the semiconductor switch for realizing three-level power conversion device.In fig. 8, MD5 ~ MD7 is the semiconductor module (in a module two branch roads) of the semiconductor switch being built-in with two branch road parts.Fig. 9 represents block configuration when being connected in parallel three each semiconductor modules and distribution structure.MD5a ~ MD5c, MD6a ~ MD6c, MD7a ~ MD7c are the semiconductor modules (in a module two branch roads) being built-in with two branch roads shown in Figure 10 (b), and 207a ~ 207c is voltage clamp bit-type buffer.And UB2 is ac terminal DP distributing pole, UPB2, UNB2 are the DP distributing poles of neutral point clamping diode circuit, and MB2 is the DP distributing pole of zero pole, connect each semiconductor module be connected in parallel.In order to reduce distribution inductance, effectively suppress surge voltage, the semiconductor module MD7a being connected with buffer 207a is configured between semiconductor module MD6a and MD5a.The formation of module MD7b, MD6b and MD5b is also identical with the formation of module MD7c, MD6c and MD5c.
In the above-described embodiments, represent the example of phase part for inverter circuit (inverse transform circuit) or converter circuit (PWM rectification circuit), but if use two circuit to foregoing circuit, two-phase device can be formed, if use three-circuit, can three-phase installation be formed.
The following describes the present invention's utilizability industrially:
The present invention is when direct voltage is high or requires that high voltage is as the three-level power conversion device used when alternating voltage, can be applicable to uninterrupted power supply(ups), motor driving conversion equipment etc.
Above with reference to illustrating example of the present invention, but the present invention is not limited to above-mentioned example.Can do all changes in the technology of the present invention thought range, they all belong to protection scope of the present invention.
Claims (10)
1. a three-level power conversion device, DC power supply series circuit connected in series is connected with the first DC power supply and the second DC power supply, semiconductor switch series circuit connected in series is connected with the semiconductor switch of anti-parallel diodes respectively, described DC power supply series circuit and described semiconductor switch series circuit are connected in parallel, described semiconductor switch series circuit is connected in series a little as ac terminal, be connected in series a little between being connected in series a little of described semiconductor switch series circuit at described DC power supply series circuit, be connected with the bidirectional switch that can control bidirectional current ON/OFF, the feature of described three-level power conversion device is:
Described bidirectional switch is made up of the parallel circuits of the first semiconductor switch series circuit and the second semiconductor switch series circuit, described first semiconductor switch series circuit connected in series is connected with the first and second semiconductor switchs being connected in antiparallel diode respectively, described second semiconductor switch series circuit connected in series is connected with the third and fourth semiconductor switch being connected in antiparallel diode respectively, voltage clamp bit-type buffer is connected in parallel with described first and second semiconductor switchs or described third and fourth semiconductor switch, described voltage clamp bit-type buffer by the both end voltage clamper of semiconductor switch described first or second direct current power source voltage,
During described bidirectional switch cut-off current, relative to be not connected in parallel current flowing described voltage clamp bit-type buffer semiconductor switch control terminal supply cut-off signal, to be connected in parallel current flowing described voltage clamp bit-type buffer semiconductor switch control terminal supply cut-off signal be delayed by supply.
2. three-level power conversion device according to claim 1, is characterized in that:
When the module being built-in with described first semiconductor switch series circuit is connected in parallel multiple with the module being built-in with described second semiconductor switch series circuit respectively, the alternately configuration in parallel of the module that will be built-in with described first semiconductor switch series circuit and the module being built-in with described second semiconductor switch series circuit.
3. three-level power conversion device according to claim 1 and 2, is characterized in that:
The semiconductor switch of the described part be connected in series or form its part or all of semiconductor element, is accommodated in same module by each series connectors.
4. three-level power conversion device according to claim 1 and 2, is characterized in that:
Adopt following diode: the forward drop-out voltage of the diode be connected in antiparallel with the semiconductor switch being connected in parallel described voltage clamp bit-type buffer, higher than the forward drop-out voltage of the diode be connected in antiparallel with the semiconductor switch not being connected in parallel described voltage clamp bit-type buffer.
5. three-level power conversion device according to claim 1 and 2, is characterized in that:
Adopt the diode of following characteristic: the reverse recovery current of the diode be connected in antiparallel with the semiconductor switch being connected in parallel described voltage clamp bit-type buffer, less than the reverse recovery current of the diode be connected in antiparallel with the semiconductor switch not being connected in parallel described voltage clamp bit-type buffer.
6. a three-level power conversion device, consist of: DC power supply series circuit connected in series is connected with the first DC power supply and the second DC power supply, first semiconductor switch series circuit is connected with the first ~ four semiconductor switch being connected in antiparallel diode respectively according to the first ~ four semiconductor switch sequential series, described DC power supply series circuit and described first semiconductor switch series circuit are connected in parallel, described second semiconductor switch and described 3rd semiconductor switch be connected in series a little as ac terminal, second semiconductor switch series circuit connected in series is connected with the 5th and the 6th semiconductor switch being connected in antiparallel diode respectively, described second semiconductor switch series circuit is connected in the series circuit of described second semiconductor switch and described 3rd semiconductor switch in parallel, being connected in series of described second semiconductor switch series circuit a little to be connected with being connected in series of described DC power supply series circuit,
The feature of described three-level power conversion device is:
At described 5th semiconductor switch and the 6th semiconductor switch, being provided with the voltage clamping being applied to these semiconductor switchs is the so-called voltage clamp bit-type buffer of the voltage of the first DC power supply or the voltage of the second DC power supply, and the buffer be directly connected with described second semiconductor switch and described 3rd semiconductor switch is not set, or the buffer fully little with described voltage clamp bit-type buffer phase specific capacity is set, the first and second semiconductor switchs described in conducting when exporting positive voltage to described ac terminal, the third and fourth semiconductor switch described in conducting when exporting negative voltage, when exporting no-voltage respectively described in conducting second, 3rd, 5th and the 6th semiconductor switch, carry out first applying cut-off signal to described 3rd semiconductor switch when exporting from no-voltage to move on to when positive voltage exports, then cut-off signal is applied to the described 5th and the 6th semiconductor switch, after this described first semiconductor switch is applied to the action of Continuity signal, carry out first applying cut-off signal to described second semiconductor switch when exporting from no-voltage to move on to when negative voltage exports, then cut-off signal is applied to the described 5th and the 6th semiconductor switch, after this 4th semiconductor switch is applied to the action of Continuity signal.
7. three-level power conversion device according to claim 6, is characterized in that:
Described first and the 4th semiconductor switch be made up of a branch road built-in module, second and third semiconductor switch described is made up of two branch road built-in modules, described 5th and the 6th semiconductor switch is made up of two branch road built-in modules, when being connected in parallel described each module, close to configuration be built-in with described second and the 3rd semiconductor switch two path built-ins module and be built-in with the module of two path built-ins of the described 5th and the 6th semiconductor switch.
8. three-level power conversion device according to claim 6, is characterized in that:
First and second semiconductor switch described, described 3rd and the 4th semiconductor switch, and the described 5th and the 6th semiconductor switch respectively with two branch road built-in modules form, when being connected in parallel described each module, will the block configuration of the described 5th and the 6th semiconductor switch be built-in with between the module being built-in with first and second semiconductor switch described and the module being built-in with the described 3rd and the 4th semiconductor switch.
9., according to the three-level power conversion device in claim 6 ~ 8 described in any one, it is characterized in that:
Described second, third, the 5th, the 6th semiconductor switch is respectively equipped with parallel diode, the forward drop-out voltage of the parallel diode of second and third semiconductor switch described is higher than the forward drop-out voltage of the parallel diode of the described 5th and the 6th semiconductor switch.
10., according to the three-level power conversion device in claim 6 ~ 8 described in any one, it is characterized in that:
Adopt the parallel diode of following characteristic: the reverse recovery current of the parallel diode of second and third semiconductor switch described, less than the reverse recovery current of the parallel diode of the described 5th and the 6th semiconductor switch.
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| JP2011-178970 | 2011-08-18 | ||
| JP2011178970 | 2011-08-18 | ||
| JP2012026343A JP5929277B2 (en) | 2011-08-18 | 2012-02-09 | 3-level power converter |
| JP2012-026343 | 2012-02-09 |
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| CN102957332B true CN102957332B (en) | 2015-07-01 |
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| EP2804301A1 (en) * | 2013-05-13 | 2014-11-19 | Vincotech GmbH | Power conversion circuit for use in an uninterruptable power supply, and uninterruptable power supply including the power conversion circuit |
| CN105099246B (en) * | 2014-04-18 | 2018-07-20 | 台达电子企业管理（上海）有限公司 | Converter and voltage clamping circuit therein |
| CN105099151A (en) * | 2014-04-18 | 2015-11-25 | 台达电子企业管理（上海）有限公司 | Converter |
| WO2015194585A1 (en) * | 2014-06-17 | 2015-12-23 | 株式会社明電舎 | Resonant load power conversion device and time division operation method for resonant load power conversion device |
| CN106208793A (en) * | 2015-04-30 | 2016-12-07 | 深圳市健网科技有限公司 | A kind of AC-DC translation circuit and converting power source |
| CN110417248A (en) * | 2019-08-08 | 2019-11-05 | 成都运达科技股份有限公司 | A kind of diode clamping tri-level RCD absorbing circuit |
| CN110838800B (en) * | 2019-10-11 | 2021-08-10 | 科华恒盛股份有限公司 | Conversion circuit and corresponding three-phase conversion circuit and conversion device |
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| US5982646A (en) * | 1998-06-30 | 1999-11-09 | General Electric Company | Voltage clamp snubbers for three level converter |
| EP1047180A3 (en) * | 1999-04-20 | 2001-04-11 | ABBPATENT GmbH | ARCP three-point power converter or multi-point power converter |
| JP3634982B2 (en) * | 1999-06-11 | 2005-03-30 | 財団法人理工学振興会 | Current forward / reverse bidirectional switch to regenerate snubber energy |
| JP2002247862A (en) * | 2001-02-20 | 2002-08-30 | Hitachi Ltd | Power converter |
| US8611120B2 (en) * | 2009-06-19 | 2013-12-17 | Mitsubishi Electric Corporation | Power conversion apparatus |
| CN101640498B (en) * | 2009-09-08 | 2011-09-21 | 西安交通大学 | Tri-level zero-current conversion soft switching inverter of active middle voltage clamp |
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