CN102447401A - Power inverter - Google Patents
Power inverter Download PDFInfo
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- CN102447401A CN102447401A CN2011104585256A CN201110458525A CN102447401A CN 102447401 A CN102447401 A CN 102447401A CN 2011104585256 A CN2011104585256 A CN 2011104585256A CN 201110458525 A CN201110458525 A CN 201110458525A CN 102447401 A CN102447401 A CN 102447401A
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- switch mosfet
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- power inverter
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- circuit board
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Abstract
The invention discloses a power inverter. The power inverter comprises a circuit board, 24 MOSFET (metal-oxide-semiconductor field effect transistor) switch elements, 24 follow current diodes which are reversely connected with MOSFET switch elements in parallel and 24 electrolysis capacitors, wherein 4 MOSFET switch elements are combined into one path of power switch device, 24 MOSFET switch elements are divided into six paths of power switch devices, and three-phase bridge connection is formed among the six paths of power switch devices; the 24 electrolysis capacitors are respectively connected in parallel between the drain electrodes and the source electrodes of the 24 MOSFET switch elements; and the six paths of power switch devices are of a symmetrical structure on the circuit board. The power inverter is simple in structure and is easy to manufacture. The power inverter is simple in manufacturing process, and the follow current capacity of the power inverter is enhanced.
Description
Technical field
The invention belongs to electric and electronic technical field, particularly a kind of power inverter.。
Background technology
Domesticly done many research work at the high-power speed-adjusting system aspects, that studies comparative maturity at present has a thyristor dc electric machine speed regulation, thyristor AC-AC frequency speed governing, thyristor frequency conversion device of step-down-common frequencies-boost etc.These install not only complex structure, and adopt thyristor SCR maybe can turn-off transistor GTO as switch element mostly, because switching frequency has only hundreds of HZ, cause the pulsation of current of electric, torque, problems such as bad dynamic performance.This type systematic side harmonics is bigger in addition, and is serious to electric network pollution, and the additional electrical network filter of still needing makes system cost increase.Add the impact of external product in recent years, therefore homemade high power contravariant device development prospect allows of no optimist, and it is significant for the industrial energy saving of using energy source and China to study powerful high-performance motor driver.
Eighties of last century is since the eighties; Can turn-off transistor GTO, bipolar transistor BJT, be that the switching device of representative obtains significant progress with insulated gate bipolar transistor npn npn IGBT, metal oxide semiconductor field effect tube MOSFET; Be accompanied by the develop rapidly of power electronic device; Especially be the surprising development of the bipolarity multiple device of representative with IGBT, MOSFET, make power electronic device just advance along big capacity, high frequency, easy driving, low-loss, intelligent modularized direction.Be accompanied by the develop rapidly of power electronic device, the development of high power contravariant device is high performance day by day also.
In some low pressure applications occasions (like electric automobile, electri forklift etc.); Vehicle-mounted dc power supply is a low-voltage dc power supply; Usually have only tens volts (like 48V); As satisfying the demand of real system power, the afterflow ability of power inverter will reach hundreds of ampere (like 600A) like this.
Summary of the invention
The objective of the invention is deficiency, a kind of power inverter is provided to existing technology existence.
The technical solution that realizes the object of the invention is: a kind of power inverter comprises circuit board, 24 switch mosfet elements, 24 and the fly-wheel diode of switch mosfet element reverse parallel connection, 24 electrochemical capacitors; With 4 switch mosfet elements and make one road device for power switching, 24 switch mosfet elements are divided into 6 road device for power switching, are that three phase bridge connects between 6 road device for power switching; 24 electrolytic capacitors are connected in parallel on respectively between the drain electrode and source electrode of 24 switch mosfet elements; 6 road device for power switching are symmetrical structure on circuit board.
The present invention compared with prior art, its remarkable advantage: one, structure is simpler, makes easily.The switch mosfet element that the present invention adopted, reverse fly-wheel diode etc. are conventional device, and manufacture craft is comparatively simple; Two, inverter afterflow ability of the present invention is stronger.The power output of power inverter is subject to the direct current supply electric pressure of inverter and the overcurrent capability of power switch component; The present invention is just on the basis of existing battery tension grade; Replace single power switch component with four power switch component parallel connections, strengthened power inverter afterflow ability.
Description of drawings
Fig. 1 is a power inverter circuit plate front schematic view.
Fig. 2 is a power inverter circuit plate reverse side sketch map.
Fig. 3 is the topology diagram of power inverter.
Embodiment
Below in conjunction with accompanying drawing further explain is done in invention:
In conjunction with Fig. 3, a kind of power inverter of the present invention comprises 10,24 electrolytic capacitors 9 of 11,24 reverse fly-wheel diodes of 24 switch mosfet elements; With 4 switch mosfet elements 11 and make one road device for power switching, 24 switch mosfet elements 11 are divided into 6 road device for power switching, are that three phase bridge connects between 6 road device for power switching; 24 reverse fly-wheel diodes 10 are connected in parallel on respectively between the drain electrode and source electrode of 24 switch mosfet elements 11, and 24 electrolytic capacitors 9 are connected in parallel on respectively between the drain electrode and source electrode of 24 switch mosfet elements 11.
In conjunction with Fig. 1, Fig. 2, a kind of power inverter of the present invention, per No. 1 components and parts comprise 4,4 electrolytic capacitors 1 of 7,4 reverse fly-wheel diodes of 4 switch mosfet elements; Wherein, 4 switch mosfet elements 7 are 90 ° of mutual deviations spatially, rounded distribution, and the positive pole of the switch mosfet element 7 of going up brachium pontis and external power source near, the switch mosfet element 7 of following brachium pontis and the negative pole of external power source near; Be connected in parallel nearby between 4 reverse fly-wheel diodes 4 and the switch mosfet element 7; Be connected in parallel nearby between 4 electrolytic capacitors 1 and the switch mosfet element 7; 6 road device for power switching are symmetrical structure on circuit board; Signal plug 5 is the input of external control signal;
A kind of power inverter of the present invention; One of difficult point of its switch mosfet element parallel connection is equal flow problem; The principal element that influences the electric current distribution is the conducting resistance Rds of MOSFET switch element, and when each switch mosfet element conductive resistance of parallel connection did not match, electric current and conducting resistance that the switch mosfet element is flow through were inversely proportional to; The minimum switch mosfet element of conducting resistance Rds will flow through maximum electric current; Cause the inequality of quiescent drain current, if surpass the electric current afterflow limit of switch mosfet element, will be abnormally dangerous; Therefore the conducting voltage difference that is elected to be 4 switch mosfet elements of one tunnel needs in 0～0.1V;
A kind of power inverter of the present invention, the back side of said circuit board 6 covers one deck copper sheet 8, is covered with one deck scolding tin on the surface of copper sheet 8; Usually the thickness of Copper Foil lead is 35 microns, and on every square millimeter of Copper Foil lead, suitable electric current through 10-15A will make the Copper Foil lead just need to increase the sectional area of lead through the electric current of hundreds of ampere, also promptly increases the width and the thickness of lead; Increase the width of lead, board area must increase, and can not satisfy the limited requirement of side circuit plate area; Increase the thickness of lead, just need on the Copper Foil of base plate, cover scolding tin, but because the fusing point of scolding tin is lower, when long-time during on the lead through big electric current, the scolding tin thawing of can generating heat, the Copper Foil from base plate under the effect of gravity comes off, and method is also inadvisable; So the present invention proposes a kind of wiring trend according to circuit board; Use that line cutting technology cuts out that shape is consistent with circuit board Copper Foil wire shape, thickness is 2 millimeters copper sheet; Using thickness again is that 3 millimeters scolding tin is overlying on copper sheet on the Copper Foil; The thickness of lead will reach 5 millimeters like this, applicable to direct current supply voltage in the 30-150V scope, the afterflow requirement below the 600A.
Claims (4)
1. power inverter is characterized in that: the fly-wheel diode [10], 24 electrochemical capacitors [9] that comprise circuit board, 24 switch mosfet elements [11], 24 and switch mosfet element reverse parallel connection; With 4 switch mosfet elements [11] and make one road device for power switching, 24 switch mosfet elements [11] are divided into 6 road device for power switching, are that three phase bridge connects between 6 road device for power switching; 24 electrolytic capacitors [9] are connected in parallel on respectively between the drain electrode and source electrode of 24 switch mosfet elements [11]; 6 road device for power switching are symmetrical structure on circuit board.
2. power inverter according to claim 1 is characterized in that: the back side of said circuit board covers one deck copper sheet, at surface coverage one deck scolding tin of copper sheet.
3. power inverter according to claim 1 is characterized in that: in described 24 switch mosfet elements [11], and mutual deviation 90 degree between 4 switch mosfet elements [11], rounded distribution; Wherein on the inverter positive pole of the switch mosfet element [11] of brachium pontis and external power source near, the switch mosfet element [11] of following brachium pontis and the negative pole of external power source near.
4. power inverter according to claim 1 is characterized in that: said switch mosfet element [11] is when just beginning conducting, and the voltage between the drain-source of switch mosfet element [11] is reduced to 0～0.1V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104585256A CN102447401A (en) | 2011-12-31 | 2011-12-31 | Power inverter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104585256A CN102447401A (en) | 2011-12-31 | 2011-12-31 | Power inverter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102447401A true CN102447401A (en) | 2012-05-09 |
Family
ID=46009572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011104585256A Pending CN102447401A (en) | 2011-12-31 | 2011-12-31 | Power inverter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102447401A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106972737A (en) * | 2017-04-20 | 2017-07-21 | 天索（苏州）控制技术有限公司 | With the MOSFET parallel driver circuits for flowing protection |
| CN109768696A (en) * | 2018-11-23 | 2019-05-17 | 西安电子科技大学 | Variable on-resistance switching circuit for the boost converter that thermoelectric energy obtains |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62178174A (en) * | 1986-01-30 | 1987-08-05 | Toshiba Corp | Control circuit for inverter |
| JPS6481669A (en) * | 1987-09-21 | 1989-03-27 | Fuji Electric Co Ltd | Transistor inverter for threephase ac motor |
| EP0586793A2 (en) * | 1992-09-11 | 1994-03-16 | GRÜNDL UND HOFFMANN GmbH GESELLSCHAFT FÜR ELEKTROTECHNISCHE ENTWICKLUNGEN | Half-bridge configuration |
| CN1350420A (en) * | 2001-12-05 | 2002-05-22 | 全懋精密科技股份有限公司 | Soldering tin electroplating method to organic circuit board |
| CN202424543U (en) * | 2011-12-31 | 2012-09-05 | 南京理工大学 | Power inverter |
-
2011
- 2011-12-31 CN CN2011104585256A patent/CN102447401A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62178174A (en) * | 1986-01-30 | 1987-08-05 | Toshiba Corp | Control circuit for inverter |
| JPS6481669A (en) * | 1987-09-21 | 1989-03-27 | Fuji Electric Co Ltd | Transistor inverter for threephase ac motor |
| EP0586793A2 (en) * | 1992-09-11 | 1994-03-16 | GRÜNDL UND HOFFMANN GmbH GESELLSCHAFT FÜR ELEKTROTECHNISCHE ENTWICKLUNGEN | Half-bridge configuration |
| CN1350420A (en) * | 2001-12-05 | 2002-05-22 | 全懋精密科技股份有限公司 | Soldering tin electroplating method to organic circuit board |
| CN202424543U (en) * | 2011-12-31 | 2012-09-05 | 南京理工大学 | Power inverter |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106972737A (en) * | 2017-04-20 | 2017-07-21 | 天索（苏州）控制技术有限公司 | With the MOSFET parallel driver circuits for flowing protection |
| CN106972737B (en) * | 2017-04-20 | 2023-06-23 | 天索（苏州）控制技术有限公司 | MOSFET parallel driving circuit with current sharing protection |
| CN109768696A (en) * | 2018-11-23 | 2019-05-17 | 西安电子科技大学 | Variable on-resistance switching circuit for the boost converter that thermoelectric energy obtains |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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Application publication date: 20120509 |