CN101656509A - High and low power combination circuit of radio frequency power amplifier - Google Patents
High and low power combination circuit of radio frequency power amplifier Download PDFInfo
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- CN101656509A CN101656509A CN200910192109A CN200910192109A CN101656509A CN 101656509 A CN101656509 A CN 101656509A CN 200910192109 A CN200910192109 A CN 200910192109A CN 200910192109 A CN200910192109 A CN 200910192109A CN 101656509 A CN101656509 A CN 101656509A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21136—An input signal of a power amplifier being on/off switched
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21139—An impedance adaptation circuit being added at the output of a power amplifier stage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7215—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the input of the amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)
Abstract
The invention discloses a high and low power combination circuit of a radio frequency power amplifier. The high and low power combination circuit is connected between an output signal and a load and comprises a high-power amplifier as a power level, a low-power amplifier and a control circuit, wherein the high-power amplifier and the low-power amplifier are connected in parallel, the control circuit is used for switching the two amplifiers to work and controlling the two amplifiers, the high-power amplifier and the low-power amplifier are connected with another amplifier as an output signal driving level, and the control circuit is used for controlling the continuous conduction of the driving-level amplifier and outputting bias current which is suitable for a high or low power working mode of the power level amplifier. In the high and low power combination circuit, the radio frequency power amplifier shares a driving level under the high and low power modes, simplifies inputting and matching network design and reduces the design difficulty of the circuit; and the high and low power combination circuit has the high and low power working modes, eliminates the efficiency influence ofthe low power mode by switch insertion loss through reasonably controlling the on-off of a radio frequency switch, effectively increases the average efficiency of the radio frequency power amplifierand prolongs the service life of batteries.
Description
Technical field
The present invention relates to the radio-frequency power amplifier technical field, specifically be meant a kind of have respectively high and low power output channel, stable performance, efficient height and the succinct relatively radio-frequency (RF) power amplifier circuit of circuit.
Background technology
Radio-frequency power amplifier is a circuit module indispensable in the wireless communication system, and the radiofrequency signal after main responsible will the modulation is amplified to the certain power value, launches by antenna again.In the TD-SCDMA/CDMA/WCDMA system, the power output of radio-frequency power amplifier is not to remain at maximum, in order to optimize capacity of cellular network (base station can simultaneously treated transmission quantity), every mobile phone all needs to control its radio frequency power output, so that the base station keeps identical effective received signal to noise ratio for every mobile phone.From the probability distribution of most of mobile phones at the given area average output power, TD-SCDMA/CDMA/WCDMA standard mobile phone is no matter be in the city or the suburb, during the radio-frequency power amplifier most of the time works in, under the low power level.Radio-frequency power amplifier is as the parts of power consumption maximum in the transceiver, the power loss that reduces itself promptly improves efficient under the efficient, particularly low-power mode of radio-frequency power amplifier (in the TD-SCDMA/CDMA/WCDMA standard be high-low power switching point with 16dBm) for just seeming particularly crucial the service time that prolongs battery of mobile phone.Efficient when all only paying close attention to high-power mode usually in traditional Design of RF Power Amplifier, thereby its average efficiency is very low, has had a strong impact on the service time of battery.
In the method for existing raising radio-frequency power amplifier average efficiency, mainly contain dynamic power supplies control technology, dynamic bias control technology and parallel high and low power synthetic technique.The dynamic power supplies control technology promptly is to adopt the buck DC-DC switching regulaor to drive radio-frequency power amplifier, supply power voltage by the dynamic adjustments radio-frequency power amplifier, make it just can satisfy the amplitude requirement of radiofrequency signal in the radio-frequency power amplifier, thereby reach the purpose that improves efficiency of RF power amplifier, but the dynamic power supplies control technology needs special DC-DC switching regulaor, and this has increased the circuit complexity of radio-frequency power amplifier and production cost greatly and has seemed not too practical.The dynamic bias control technology improves the efficient of radio-frequency power amplifier by the bias current that reduces radio-frequency power amplifier when the low-power mode, adopt this technology to have advantages such as the simple and cost of circuit structure is lower, but the radio-frequency power amplifier that utilizes this method (is generally 16dBm) under low-power mode power added efficiency be PAE still less than 10%, be difficult to satisfy high efficiency requirement.
Adopt parallel high and low power synthetic technique, utilize parallel two-way amplifier that radiofrequency signal is amplified, as shown in Figure 1, when high-power mode is worked, control circuit control SW1, PA1 conducting, SW2, SW3, PA2 turn-off, realize power amplification by PA1, when low-power mode is worked, control circuit control SW2, SW3, PA2 conducting, SW1, PA1 turn-off, and realize power amplification by PA2; This height, the low-power synthetic technology is because PA1, input impedance difference when PA2 works alone is very big, thereby need be respectively its increase matching network realization input coupling, this has increased the complexity of radio-frequency power amplifier input matching Design, secondly, this power synthetic technique is when low-power mode is worked, switch SW 3 conductings, matching network four and capacitor C 1 convert impedance Z in_load to a higher impedance to improve the efficient under the low-power mode, because switch SW 3 is not the perfect switch element in integrated circuit, the Insertion Loss that switch SW 3 conductings exist can directly influence the low-power mode efficient of radio-frequency power amplifier, thereby the average efficiency of the radio-frequency power amplifier of this power synthetic method is adopted in influence.
Summary of the invention
The present invention is intended to solve the high and low power synthesis circuit of radio-frequency power amplifier in the prior art and causes average efficiency low owing to the low-power mode efficient of cause influence radio-frequency power amplifiers such as switch Insertion Loss, and matching network circuit complexity, the problem that design difficulty is big, and then provide a kind of stable performance, average efficiency height and circuit the succinct relatively high and low power synthesis circuit of radio-frequency power amplifier.
For addressing the above problem, the technical solution used in the present invention is: a kind of high-low power combining circuit for radio-frequency power amplifier is provided, this circuit is connected between input signal and the load, comprise parallel high power amplifier PA2 as power stage, low power amplifier PA3 and being used to selects the control circuit that switches two amplifier work and two amplifiers are controlled, it is characterized in that, described height, low power amplifier PA2, PA3 is connected with amplifier PA1 as the input signal driving stage simultaneously, and described control circuit control amplifier PA1 continues conducting and export to be suitable for the high power of described radio-frequency power amplifier or the bias current of low-power working mode.Described low power amplifier PA3 input, output are connected to matching network five, matching network six respectively, and low power amplifier PA3 input matching network five-way is crossed the switch SW 1 connection driving stage that is controlled by control circuit.
Preferably, described amplifier PA1 input, output can be connected with matching network one, matching network two respectively.Described load front end also can connect matching network four.
Concrete, described low power amplifier PA3 output is by capacity earth, and another electric capacity and the switch SW 2 by series connection arrives ground simultaneously, and described switch SW 2 is controlled by control circuit.
Perhaps, described low power amplifier PA3 output matching network six connects load by switch SW 2, the resonant network one that is controlled by control circuit successively, and matching network six also is connected to load by matching network seven simultaneously.
Again or, the switch SW 2 of described low power amplifier PA3 output matching network six by being controlled by control circuit, electric capacity is to ground, and connects matching network seven simultaneously.
Compare with conventional art, the present invention has the following advantages:
1) in the described circuit, radio-frequency power amplifier is a shared driving stage under high and low power mode, has simplified the input matching network design, has reduced the circuit design difficulty;
2) described circuit has high and low power modes of operation, and passes through the reasonable break-make of controlling radio-frequency (RF) switch to eliminate the influence of switch Insertion Loss to low-power mode efficient, has effectively improved the average efficiency of radio-frequency power amplifier, has prolonged the service time of battery.
Description of drawings
Fig. 1 is existing high-low power combining circuit for radio-frequency power amplifier schematic diagram;
Fig. 2 is the embodiment of the invention one circuit theory diagrams;
Fig. 3 is the embodiment of the invention two circuit theory diagrams;
Fig. 4 is an embodiment of the invention three-circuit schematic diagram.
Embodiment
For the ease of it will be appreciated by those skilled in the art that the present invention is described in further detail below in conjunction with drawings and Examples.
At the not high shortcoming of existing radio-frequency (RF) power amplifier circuit average efficiency, the present invention proposes a kind of radio-frequency power amplifier height, the low-power synthetic method, promptly utilize the driving stage conducting always of control circuit control radio-frequency power amplifier, but at height, the low-power mode below-center offset is in different bias currents, and the power stage that radio-frequency power amplifier walks abreast is at height, has only one tunnel conducting under the low-power mode, thereby help to simplify the design of radio-frequency power amplifier input matching network and increase high, isolation between low-power mode, and pass through reasonably to control the break-make of radio-frequency (RF) switch to eliminate of the influence of switch Insertion Loss to low-power mode efficient, thereby improve the average efficiency of radio-frequency power amplifier, and then under limited battery capacity, prolong the air time of mobile phone effectively.
Specific embodiment of the invention circuit such as Fig. 2, Fig. 3, shown in Figure 4.
Fig. 2 implements circuit diagram for the present invention first.Its implementation is amplified the radiofrequency signal after amplifying through driving stage for adopting parallel power level amplifier, and realizes high and low power mode work by the break-make that control circuit is controlled each power amplifier and switch.
When high-power mode is worked, control circuit control amplifier PA1, PA2, and radio-frequency (RF) switch SW2 conducting, and amplifier PA1 is offset to high gain mode, and amplifier PA3, radio-frequency (RF) switch SW1 turn-off.Then input signal is exported to load by constituting the high-power mode passage by matching network one, driving stage amplifier PA1, matching network two, matching network three, power stage amplifier PA2 and matching network four.Wherein, the matching network four-function is in converting load (being generally 50 ohm) to a low-resistance, to improve the power output ability of radio-frequency power amplifier; Matching network two and matching network three constitute inter-stage matching network, and the impedance transformation that is used for seeing into from amplifier PA2 input becomes a higher impedance, to improve the gain of radio-frequency power amplifier; Matching network one is used for realizing the input coupling, to reduce the reflection of input radio frequency signal; Switch SW 1 and SW2 are used to increase isolation between the high and low power mode (removing at the isolation Shi Qike that meets the demands), SW2 produces a low-resistance with capacitor C 2 when high-power mode is worked (effect of C2 is to provide one to exchange ground to switch SW 2, its capacitance is relatively large, under high frequency, can think its ac short circuit, and the position of itself and SW2 can be changed up and down).Because the output impedance of the amplifier PA3 that turn-offs is higher relatively, so the impedance of Zout1 position is mainly determined by the impedance of SW2 and capacitor C 2, low-resistance Zout1 converts a high resistant (with respect to the Zin_load position) to through matching network six, thereby guarantees the radiofrequency signal most of inflow matching network four after power stage amplifier PA2 amplifies and pass to load.
When low-power mode is worked, control circuit control amplifier PA1, PA3, switch SW 1 conducting and amplifier PA1 are offset to low gain mode, and amplifier PA2, switch SW 2 are turn-offed, and input signal constitutes the low-power mode passage via matching network one, amplifier PA1, switch SW 1, matching network five, amplifier PA3, capacitor C 1, matching network six and matching network four and exports to load.Wherein amplifier PA1 is a variable gain amplifier, thereby when low-power mode is worked, work in low gain mode with the efficient under the further raising low-power mode (when low-power mode requires high-gain, can utilize control circuit to produce control signal and make PA1 be offset to high gain mode) by the bias current that reduces PA1 by it; Because radio-frequency (RF) switch SW3 disconnects, thereby has eliminated the influence of the conducting Insertion Loss of switch SW 3 to low-power mode efficient; Matching network six and capacitor C 1 are used for converting impedance Z in load to a higher impedance, to improve low-power mode work limitation rate; Matching network two and matching network five constitute inter-stage matching network, and matching network one is an input matching network.When physical circuit was realized, switch in the scheme and matching network can be accepted or rejected according to actual conditions.
Fig. 3 implements circuit diagram for the present invention second.It is being connected between matching network six, matching network seven, switch SW 2 and the resonant network 1 with the difference of Fig. 2, and in the present embodiment, radio-frequency (RF) switch SW2 and resonant network 1 connected earlier in parallel with matching network seven again, connects with matching network six again.When high-power mode is worked, radio-frequency (RF) switch SW2 conducting, matching network six, matching network seven and resonant network 1 convert the output impedance of amplifier PA3 to a high resistant jointly, thereby guarantee the output signal most of inflow matching network four after power stage is amplified and pass to load.When low-power mode was worked, switch SW 2 was turn-offed to eliminate the influence of switch Insertion Loss to low-power mode efficient, and matching network six and matching network seven are used for converting impedance Z in_load to a higher impedance, to improve low-power mode work limitation rate; All the other of this embodiment are described with embodiment illustrated in fig. 2 identical, do not repeat them here.
Fig. 4 implements circuit diagram for the present invention the 3rd, and this example is being connected between matching network six, matching network seven, switch SW 2 and the capacitor C 1 with the difference of embodiment shown in Figure 2.Switch SW 2 is connected earlier in parallel with matching network seven again with capacitor C 1 in the present embodiment, connect with matching network six more at last, wherein the effect of C1 is to provide one to exchange ground to switch SW 2, its capacitance is relatively large, under high frequency, can think its ac short circuit, and the position of itself and SW2 can be changed up and down; When high-power mode is worked, switch SW 2 conductings, thereby matching network seven bypasses, the output impedance of PA3 is converted to a high resistant, thereby guarantee the radiofrequency signal most of inflow matching network four after power stage is amplified and pass to load by matching network six; When low-power mode was worked, switch SW 2 was turn-offed to eliminate the influence of switch Insertion Loss to low-power mode efficient, and matching network six and matching network seven convert impedance Z in load to a higher impedance, to improve low-power mode work limitation rate; All the other of present embodiment are described with embodiment illustrated in fig. 2 identical, do not repeat them here.
The specific implementation of each matching network described in the present invention, resonant network and the selection of amplifier etc., those skilled in the art can according to circumstances specifically determine, enumerate no longer one by one at this.
Below, it should be noted that, conceive under the prerequisite its any minor variations of doing and be equal to replacement not breaking away from the present invention, all should belong to protection scope of the present invention only for the present invention embodiment more preferably.
Claims (7)
1, high-low power combining circuit for radio-frequency power amplifier, be connected between input signal and the load, comprise parallel high power amplifier PA2 as power stage, low power amplifier PA3 and being used to selects the control circuit that switches two amplifier work and two amplifiers are controlled, it is characterized in that, described height, low power amplifier PA2, PA3 is connected with amplifier PA1 as the input signal driving stage simultaneously, and described control circuit control amplifier PA1 continues conducting and export to be suitable for the high power of described radio-frequency power amplifier or the bias current of low-power working mode.
2, high-low power combining circuit for radio-frequency power amplifier according to claim 1, it is characterized in that: described low power amplifier PA3 input, output are connected to matching network five, matching network six respectively, and low power amplifier PA3 input matching network five-way is crossed the switch SW 1 connection driving stage that is controlled by control circuit.
3, high-low power combining circuit for radio-frequency power amplifier according to claim 2, it is characterized in that, described low power amplifier PA3 output is by capacity earth, and another electric capacity and the switch SW 2 by series connection arrives ground simultaneously, and described switch SW 2 is controlled by control circuit.
4, high-low power combining circuit for radio-frequency power amplifier according to claim 2, it is characterized in that, described low power amplifier PA3 output matching network six connects load by switch SW 2, the resonant network one that is controlled by control circuit successively, and matching network six also is connected to load by matching network seven simultaneously.
5, high-low power combining circuit for radio-frequency power amplifier according to claim 2 is characterized in that, described low power amplifier PA3 output matching network six arrives ground, and connects matching network seven simultaneously by switch SW 2, the electric capacity that is controlled by control circuit.
According to claim 3 or 4 or 5 described high-low power combining circuit for radio-frequency power amplifier, it is characterized in that 6, described amplifier PA1 input, output can be connected with matching network one, matching network two respectively.
7, high-low power combining circuit for radio-frequency power amplifier according to claim 6 is characterized in that, described load front end also can connect matching network four.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910192109A CN101656509A (en) | 2009-09-04 | 2009-09-04 | High and low power combination circuit of radio frequency power amplifier |
| PCT/CN2009/076243 WO2011026298A1 (en) | 2009-09-04 | 2009-12-30 | Multi-mode power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910192109A CN101656509A (en) | 2009-09-04 | 2009-09-04 | High and low power combination circuit of radio frequency power amplifier |
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| Publication Number | Publication Date |
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| CN101656509A true CN101656509A (en) | 2010-02-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910192109A Pending CN101656509A (en) | 2009-09-04 | 2009-09-04 | High and low power combination circuit of radio frequency power amplifier |
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| CN (1) | CN101656509A (en) |
| WO (1) | WO2011026298A1 (en) |
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| CN103701412A (en) * | 2013-12-31 | 2014-04-02 | 天津朗波微电子有限公司 | Circuit for realizing high and low power of linear power amplifier by taking CMOS (complementary metal-oxide-semiconductor) transistors as switches |
| CN103873021A (en) * | 2012-12-17 | 2014-06-18 | 京信通信系统（中国）有限公司 | Radio frequency amplitude limiting protection circuit |
| CN103916110A (en) * | 2012-12-31 | 2014-07-09 | 特里奎恩特半导体公司 | Radio frequency switch circuit |
| WO2015027433A1 (en) * | 2013-08-29 | 2015-03-05 | Telefonaktiebolaget L M Ericsson (Publ) | Driver circuit and associated power amplifier assembly, radio base station and method |
| CN105978492A (en) * | 2016-04-27 | 2016-09-28 | 上海华虹宏力半导体制造有限公司 | Radio frequency power amplifier |
| CN103716869B (en) * | 2013-12-12 | 2016-12-07 | 浙江工业大学 | A kind of distributed power control method optimized based on efficiency in D2D communication |
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Family Cites Families (5)
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| US8130043B2 (en) * | 2003-09-25 | 2012-03-06 | Anadigics, Inc. | Multi-stage power amplifier with enhanced efficiency |
| DE102005050622A1 (en) * | 2005-10-21 | 2007-05-03 | Infineon Technologies Ag | Transmitter output stage for mobile communication system, has two matching networks connected at signal outputs of amplifier stages, where one of networks has matching unit and switch for alternatively changing impedance of unit |
| CN101364791A (en) * | 2007-08-07 | 2009-02-11 | 曹志明 | Low noise amplifier with multiband variable gain |
| CN101478291A (en) * | 2008-10-24 | 2009-07-08 | 锐迪科微电子（上海）有限公司 | Radio frequency power amplifier circuit and radio frequency power amplifying method |
-
2009
- 2009-09-04 CN CN200910192109A patent/CN101656509A/en active Pending
- 2009-12-30 WO PCT/CN2009/076243 patent/WO2011026298A1/en active Application Filing
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103873021A (en) * | 2012-12-17 | 2014-06-18 | 京信通信系统（中国）有限公司 | Radio frequency amplitude limiting protection circuit |
| CN103873021B (en) * | 2012-12-17 | 2016-08-10 | 京信通信系统（中国）有限公司 | Radio frequency limiter protection circuit |
| CN103916110A (en) * | 2012-12-31 | 2014-07-09 | 特里奎恩特半导体公司 | Radio frequency switch circuit |
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| WO2015027433A1 (en) * | 2013-08-29 | 2015-03-05 | Telefonaktiebolaget L M Ericsson (Publ) | Driver circuit and associated power amplifier assembly, radio base station and method |
| CN103716869B (en) * | 2013-12-12 | 2016-12-07 | 浙江工业大学 | A kind of distributed power control method optimized based on efficiency in D2D communication |
| CN103701412A (en) * | 2013-12-31 | 2014-04-02 | 天津朗波微电子有限公司 | Circuit for realizing high and low power of linear power amplifier by taking CMOS (complementary metal-oxide-semiconductor) transistors as switches |
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| EP3116122A3 (en) * | 2015-07-06 | 2017-03-22 | MediaTek Inc. | Matching network for load line change |
| US9882588B2 (en) | 2015-07-06 | 2018-01-30 | Mediatek Inc. | Matching network for load line change |
| US11424722B2 (en) | 2016-03-11 | 2022-08-23 | Intel Corporation | Ultra compact multi-band transmitter with robust AM-PM distortion self-suppression techniques |
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| CN105978492A (en) * | 2016-04-27 | 2016-09-28 | 上海华虹宏力半导体制造有限公司 | Radio frequency power amplifier |
| CN108075751A (en) * | 2016-11-18 | 2018-05-25 | 三星电机株式会社 | Radio frequency switch device with dynamic bias |
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| CN109687829A (en) * | 2018-12-19 | 2019-04-26 | 佛山臻智微芯科技有限公司 | A kind of broadband high-power high-efficiency radio-frequency power amplifier structure |
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| CN111641395A (en) * | 2020-06-10 | 2020-09-08 | 广州慧智微电子有限公司 | Radio frequency power amplifier and method for realizing radio frequency signal amplification |
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