CN100573838C - The preparation method of the hybrid integrated circuit structure of three-dimensional CMOS and molecule switching element - Google Patents
The preparation method of the hybrid integrated circuit structure of three-dimensional CMOS and molecule switching element Download PDFInfo
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- CN100573838C CN100573838C CNB2007101769336A CN200710176933A CN100573838C CN 100573838 C CN100573838 C CN 100573838C CN B2007101769336 A CNB2007101769336 A CN B2007101769336A CN 200710176933 A CN200710176933 A CN 200710176933A CN 100573838 C CN100573838 C CN 100573838C
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Abstract
The invention discloses the preparation method of the hybrid integrated circuit structure of a kind of three-dimensional CMOS and molecule switching element, comprising: at the cmos device of substrate preparation standard; On this cmos device, cover one deck passivation layer; This passivation layer is carried out photoetching, etching formation through hole; The plated metal filling vias, the excess metal layer is removed in the chemical machinery polishing, stays metal formation interconnection in the through hole; Prepare the molecule switching element metal electrode at the device surface that obtains, by through hole and cmos device interconnection, as bottom chip; Deposit has electric bi-stable switching characteristic molecular film on this bottom chip; Repeat above-mentioned steps and prepare the top layer chip; Be crossed as certain angle by two groups of metal electrodes about the molecule switching element,, be connected on the bottom chip top layer chip back-off.Utilize the present invention, avoided not at grade through hole and the influence of upper/lower electrode, simultaneously circuit level is doubled, have higher innovative significance and a practical value.
Description
Technical field
The present invention relates to the nanometer circuit preparing technical field in microelectronics and the molecular electronics, relate in particular to the preparation method of the hybrid integrated circuit structure of a kind of three-dimensional CMOS and molecule switching element.
Background technology
Along with the characteristic size of large scale integrated circuit enters into nanoscale, traditional si-substrate integrated circuit technology faces the challenge, and the research of new material and new construction becomes focus, and the molecular electronic device of one of nano-electron branch is just flourish.
Based on the crossed molecular electronic device of bistable switch characteristic (Chen Y, Jung G Y, OhlbergD A A et al.Nanotechnology, 2003, be one of the primary structure of present molecular electronic device 14:462), be subjected to extensive concern.Crossed molecular electronic device is a kind of two terminal device, and is different with traditional three terminal device transistor.Adopt which kind of circuit structure just can make full use of the advantage of crossed molecular electronic device, be the focus that scientist studies always.
CMOL hybrid integrated circuit structure (the Likharev that crossed molecular electronic device and cmos device are integrated, K.K., and Strukov, D.: ' CMOL:devices, circuits, andarchitectures ', in G.Cuniberti, et al. ' Introduction to molecular electronics ' (Springer, Berlin, 2005), pp.447-477), because the high and high advantage of molecular electronic device integrated level of its comprehensive cmos device reliability is having very high application potential aspect the molecular circuit in future.
In traditional two-dimentional CMOL structure, the upper/lower electrode of molecule switching element all is connected with cmos device by through hole.As shown in Figure 1, Fig. 1 is the schematic diagram of the hybrid integrated circuit structure of conventional two-dimensional CMOS and molecule switching element; Wherein, the through hole that connects cmos device and molecule switching element upper/lower electrode not at grade, it is very big to prepare difficulty.Because the upper/lower electrode of molecule switching element is on same plane,, never well solve so how to prepare these through holes and how to avoid influence between through hole and upper/lower electrode.
So be necessary to study new circuit structure and the preparation method solves these problems.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide the preparation method of the hybrid integrated circuit structure of a kind of three-dimensional CMOS and molecule switching element, with avoid not at grade through hole and the influence between the upper/lower electrode, and simplify manufacture craft, improve the integrated level of circuit.
(2) technical scheme
For achieving the above object, technical scheme of the present invention is achieved in that
The preparation method of the hybrid integrated circuit structure of a kind of three-dimensional CMOS and molecule switching element, this method comprises:
Step 1, at the cmos device of substrate preparation standard;
Step 2, on this cmos device, cover one deck passivation layer;
Step 3, this passivation layer is carried out photoetching or etching, form through hole;
Step 4, plated metal filling vias, the excess metal layer is removed in the chemical machinery polishing, stays metal formation interconnection in the through hole;
Step 5, the device surface that obtains in step 4 prepare the molecule switching element metal electrode, by through hole and cmos device interconnection, as bottom chip;
Step 6, deposit has electric bi-stable switching characteristic molecular film on this bottom chip;
Step 7, repeating step 1 to 5 preparation top layer chip;
Step 8, by molecule switching element up and down two groups of metal electrodes be crossed as certain angle, with top layer chip back-off, and be connected on the bottom chip, finish three-dimensional CMOL hybrid integrated circuit preparation.
In the such scheme, described cmos device adopts conventional microelectronic technique preparation.
In the such scheme, described passivation layer is for adopting the silicon nitride of PECVD method growth.
In the such scheme, metal described in the step 4 is Cu or Al.
In the such scheme, described molecule switching element is the chi structure two terminal device based on the bistable switch material.
In the such scheme, the method for the film of molecule deposition described in the step 6 comprises, self assembly Self-Assemble, LB method, vacuum evaporation and spin coating.
In the such scheme, described in the step 8 with top layer chip back-off and be connected on the bottom chip, employing be bonding.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, the preparation method of the hybrid integrated circuit structure of this three-dimensional CMOS provided by the invention and molecule switching element, the upper/lower electrode of molecule switching element is connected with top layer and bottom cmos device respectively, link together by bonding then, the centre accompanies the molecular layer with switching characteristic, avoided not at grade through hole and the influence of upper/lower electrode, simultaneously circuit level is doubled, has higher innovative significance and practical value.
2, the preparation method of the hybrid integrated circuit structure of this three-dimensional CMOS provided by the invention and molecule switching element with the CMOL circuit of two dimension before, has simplified preparation technology effectively, has improved integrated level simultaneously, has simple, the integrated level advantages of higher of technology.
3, the preparation method of the hybrid integrated circuit structure of this three-dimensional CMOS provided by the invention and molecule switching element has reduced technology difficulty, and has reused the high integration of molecule switching element, and the integrated level of hybrid circuit is increased many times.
4, the preparation method of the hybrid integrated circuit structure of this three-dimensional CMOS provided by the invention and molecule switching element compares with CMOS FPGA circuit structure, and three-dimensional CMOL structure integrated level has improved 16 times, and speed improves 1.4 times.
5, the preparation method of the hybrid integrated circuit structure of this three-dimensional CMOS provided by the invention and molecule switching element has a wide range of applications at aspects such as nanoelectronics and molecular electronicses.
Description of drawings
Fig. 1 is the schematic diagram of the hybrid integrated circuit structure of conventional two-dimensional CMOS and molecule switching element; Wherein, the through hole that connects cmos device and molecule switching element upper/lower electrode not at grade, it is very big to prepare difficulty;
Fig. 2 is the schematic diagram of the hybrid integrated circuit structure of three-dimensional CMOS provided by the invention and molecule switching element; Wherein, the molecule switching element upper/lower electrode is connected with top layer and bottom cmos device respectively, and bonding forms three-dimensional structure then;
Fig. 3 is the method flow diagram of the hybrid integrated circuit structure of preparation three-dimensional CMOS provided by the invention and molecule switching element;
Fig. 4 is the process chart of the hybrid integrated circuit structure of preparation three-dimensional CMOS provided by the invention and molecule switching element;
Fig. 5 is for preparing the process chart of the hybrid integrated circuit structure of three-dimensional CMOS and molecule switching element according to the embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The invention provides the preparation method of the hybrid integrated circuit structure of a kind of three-dimensional CMOS and molecule switching element, in order to reduce in the two dimensional surface CMOL hybrid integrated circuit requirement to through hole and interconnection, simplify preparation technology, upper/lower electrode in the molecule switching element is continuous with corresponding up and down cmos device respectively, form a kind of three-dimensional structure.
As shown in Figure 2, Fig. 2 is the schematic diagram of the hybrid integrated circuit structure of three-dimensional CMOS provided by the invention and molecule switching element; Wherein, the molecule switching element upper/lower electrode is connected with top layer and bottom cmos device respectively, and bonding forms three-dimensional structure then.The three-dimensional CMOS shown in Figure 2 and the hybrid integrated circuit structure of molecule switching element are formed by connecting by top layer cmos device, molecule switching element and bottom cmos device from top to bottom successively.Described top layer cmos device is connected with the molecule switching element top electrode by through hole, and the bottom cmos device is connected with the molecule switching element bottom electrode by through hole, and described top layer cmos device and bottom cmos device bonding link together.Described top layer cmos device, molecule switching element, bottom cmos device three interconnect and realize the hybrid integrated circuit function.
Based on the three-dimensional CMOS shown in Figure 2 and the hybrid integrated circuit structure of molecule switching element, Fig. 3 shows the method flow diagram of the hybrid integrated circuit structure of preparation three-dimensional CMOS provided by the invention and molecule switching element, and this method comprises:
Step 1, at the cmos device of substrate preparation standard; In the present invention, cmos device adopts conventional microelectronic technique preparation, and molecule switching element is the chi structure two terminal device based on the bistable switch material.
Step 2, on this cmos device, cover one deck passivation layer; Described passivation layer is for passivating material commonly used, as the silicon nitride of PECVD growth.
Step 3, this passivation layer is carried out photoetching, etching form through hole.
Step 4, plated metal filling vias, the excess metal layer is removed in the chemical machinery polishing, stays metal formation interconnection in the through hole; Described metal is Cu or Al etc.
Step 5, the device surface that obtains in step 4 prepare the molecule switching element metal electrode, by through hole and cmos device interconnection, as bottom chip;
Step 6, deposit has electric bi-stable switching characteristic molecular film on this bottom chip; The method of described molecule deposition film comprises, self assembly (Self-Assemble), LB (Langmuir-Blodgett) method, vacuum evaporation and spin coating etc.
Step 7, repeating step 1 to 5 preparation top layer chip;
Step 8, by molecule switching element up and down two groups of metal electrodes be crossed as certain angle, with top layer chip back-off, and be connected on the bottom chip, finish three-dimensional CMOL hybrid integrated circuit preparation; The technology that described layers of chips structure up and down couples together is a bonding.
Fig. 4 shows the process chart of the hybrid integrated circuit structure of preparation three-dimensional CMOS provided by the invention and molecule switching element, specifically may further comprise the steps:
Step 1, at the cmos device 101 of substrate preparation standard;
Step 2, covering one deck passivation layer 102;
Step 3, photoetching, etching form through hole 103;
Step 4, plated metal filling vias, the excess metal layer is removed in the chemical machinery polishing, stays metal formation interconnection 104 in the through hole;
Step 5, preparation molecule switching element metal electrode 105 are by through hole and cmos device interconnection, as bottom chip 106;
Step 6, has electric bi-stable switching characteristic molecular film 107 in the bottom chip deposit;
Step 7, repeating step 1 to 5 preparation top layer chip 108;
Step 8, by molecule switching element up and down two groups of metal electrodes be crossed as certain angle, with top layer chip 108 back-offs, and be connected on the bottom chip 106, finish three-dimensional CMOL hybrid integrated circuit preparation.
Fig. 5 shows the process chart for preparing the hybrid integrated circuit structure of three-dimensional CMOS and molecule switching element according to the embodiment of the invention, specifically may further comprise the steps:
Step 1, at the cmos device 201 of silicon chip preparation standard;
Step 2, PECVD cover one deck silicon nitride passivation 202;
Step 3, photoetching, etching form through hole 203;
Step 4, plated metal Cu filling vias, the excess metal layer is removed in the chemical machinery polishing, stays metal Cu formation interconnection 204 in the through hole;
Step 5, preparation molecule switching element metal A u electrode 205 interconnect with cmos device by 204, as bottom chip 206;
Step 6, at bottom chip LB (Langmuir-Blodgett) method deposition Rotaxane monomolecular film 207;
Step 7, repeating step 1 to 5 preparation top layer chip 208;
Step 8, up and down two groups of metal A u electrode crossing are angled to press molecule switching element, with top layer chip 208 back-offs and bottom chip 206 bondings, finish three-dimensional CMOL hybrid integrated circuit and prepare.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1, the preparation method of the hybrid integrated circuit structure of a kind of three-dimensional CMOS and molecule switching element is characterized in that, this method comprises:
Step 1, at the cmos device of substrate preparation standard;
Step 2, on this cmos device, cover one deck passivation layer;
Step 3, this passivation layer is carried out photoetching or etching, form through hole;
Step 4, plated metal filling vias, the excess metal layer is removed in the chemical machinery polishing, stays metal formation interconnection in the through hole;
Step 5, the device surface that obtains in step 4 prepare the molecule switching element metal electrode, by through hole and cmos device interconnection, as bottom chip;
Step 6, deposit has electric bi-stable switching characteristic molecular film on this bottom chip;
Step 7, repeating step 1 to 5 preparation top layer chip;
Step 8, by molecule switching element up and down two groups of metal electrodes be crossed as certain angle, with top layer chip back-off, and be connected on the bottom chip.
2, the preparation method of the hybrid integrated circuit structure of three-dimensional CMOS according to claim 1 and molecule switching element is characterized in that, described cmos device adopts conventional microelectronic technique preparation.
3, the preparation method of the hybrid integrated circuit structure of three-dimensional CMOS according to claim 1 and molecule switching element is characterized in that, described passivation layer is for adopting the silicon nitride of PECVD method growth.
4, the preparation method of the hybrid integrated circuit structure of three-dimensional CMOS according to claim 1 and molecule switching element is characterized in that, metal described in the step 4 is Cu or Al.
5, the preparation method of the hybrid integrated circuit structure of three-dimensional CMOS according to claim 1 and molecule switching element is characterized in that, described molecule switching element is the chi structure two terminal device based on the bistable switch material.
6, the preparation method of the hybrid integrated circuit structure of three-dimensional CMOS according to claim 1 and molecule switching element, it is characterized in that, the method of the film of molecule deposition described in the step 6 comprises, self assembly Self-Assemble, LB method, vacuum evaporation and spin coating.
7, the preparation method of the hybrid integrated circuit structure of three-dimensional CMOS according to claim 1 and molecule switching element is characterized in that, described in the step 8 with top layer chip back-off and be connected on the bottom chip, employing be bonding.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006079005A2 (en) * | 2005-01-21 | 2006-07-27 | William Marsh Rice University | Metal-free silicon-molecule-nanotube testbed and memory device |
| CN1916630A (en) * | 2005-08-19 | 2007-02-21 | 英特尔公司 | Method for molecular and nano material based on the electric reading of concrete affair of functionalized electrode, and cmod based device |
| CN1930699A (en) * | 2004-02-05 | 2007-03-14 | 剑桥显示技术有限公司 | Molecular electronic device fabrication methods and structures |
| CN1983490A (en) * | 2005-12-15 | 2007-06-20 | 复旦大学 | Dynamic molecular-based electronic device and its operation |
| CN101431070A (en) * | 2007-11-07 | 2009-05-13 | 中国科学院微电子研究所 | Hybrid integrated circuit structure of three-dimensional CMOS and molecule switching element |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1930699A (en) * | 2004-02-05 | 2007-03-14 | 剑桥显示技术有限公司 | Molecular electronic device fabrication methods and structures |
| WO2006079005A2 (en) * | 2005-01-21 | 2006-07-27 | William Marsh Rice University | Metal-free silicon-molecule-nanotube testbed and memory device |
| CN1916630A (en) * | 2005-08-19 | 2007-02-21 | 英特尔公司 | Method for molecular and nano material based on the electric reading of concrete affair of functionalized electrode, and cmod based device |
| CN1983490A (en) * | 2005-12-15 | 2007-06-20 | 复旦大学 | Dynamic molecular-based electronic device and its operation |
| CN101431070A (en) * | 2007-11-07 | 2009-05-13 | 中国科学院微电子研究所 | Hybrid integrated circuit structure of three-dimensional CMOS and molecule switching element |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130411 Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130411 |
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Effective date of registration: 20130411 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |