CN100534900C - Method for controlling transfer single-wall carbon nanotube array structure - Google Patents
Method for controlling transfer single-wall carbon nanotube array structure Download PDFInfo
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- CN100534900C CN100534900C CNB2006101132130A CN200610113213A CN100534900C CN 100534900 C CN100534900 C CN 100534900C CN B2006101132130 A CNB2006101132130 A CN B2006101132130A CN 200610113213 A CN200610113213 A CN 200610113213A CN 100534900 C CN100534900 C CN 100534900C
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- carbon nanotube
- wall carbon
- nanotube array
- array structure
- polyester film
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Abstract
The present invention provides process of controlling the structure of transferred single wall carbon nanotube array and belongs to the field of nanometer structure preparing and processing technology. The process includes the following steps: 1. preparing single wall carbon nanotube array structure on a growth substrate; 2. spin coating polyester solution onto the substrate with single wall carbon nanotube array structure, and stoving in an oven to eliminate solvent and form polyester film; 3. heating in alkali solution to slight boiling to strip the polyester film; 4. washing the polyester film with ultra pure water, adhering the polyester film onto target substrate, blowing to dry with ultra pure nitrogen and roasting in the oven; and 5. exposing, developing and fixing to eliminate polyester film and to obtain transferred single wall carbon nanotube array on the target substrate.
Description
Technical field
The invention belongs to nanostructure preparation and processing technique field, especially a kind of method that shifts single-wall carbon nanotube array structure of controlling.
Background technology
The silicon electron device is one of the invention of great significance in 20th century, it to the effect of science and technology, production, economy and human society be any other invention can not compare with it.But according to the Moore law, the minimum size 0.08 μ m based on the microelectronics to 2011 of silicon materials year reaches physics limit, after this will be the nanoelectronics epoch.And carbon nanotube becomes the nano electron device of future generation that is hopeful to replace silicon device most with its excellent electrical properties and mechanical properties.
For over ten years, for the research of the CNT (carbon nano-tube) concern of scientific circles and industrial community extremely both at home and abroad always.Experiment finds that the electronic band structure of Single Walled Carbon Nanotube is special, and ripple loses and is limited to axially, and quantum effect is obvious, is real quantum lead.Make smaller and more exquisite, the key of computer faster especially and make the electron device that is better than current best silicon semiconductor chip with Single Walled Carbon Nanotube.At present, the method for preparing Single Walled Carbon Nanotube mainly contains chemical Vapor deposition process (CVD), arc process and laser evaporation method etc.These methods have strict requirement to growing environment, can't be applicable to various substrates.Therefore, need a kind of energy being beneficial to the single-wall carbon nanotube array structure for preparing on the particular substrate of growth, the method on the target substrate is transferred in control, realizes the structure of nano electron device.The method of existing transfer carbon nanotube has contact method and solution dispersion method etc., and these methods exist the defective that success ratio is low, can't keep the structure original appearance.
Summary of the invention
At above-mentioned existing in prior technology problem and shortage, the purpose of this invention is to provide a kind of method that shifts single-wall carbon nanotube array structure of controlling, with the PMMA polyester film as media, efficiently, keep the control of original appearance to transfer in the arbitrary target substrate single-wall carbon nanotube array structure for preparing on the growth substrate easily.
Above-mentioned purpose of the present invention is achieved by the following technical solutions:
A kind of method that shifts single-wall carbon nanotube array structure of controlling, its step comprises:
(1) on growth substrate, prepares single-wall carbon nanotube array structure;
(2) at the methyl-phenoxide solution that is shaped on spin coating one deck polymethylmethacrylate on the growth substrate surface of single-wall carbon nanotube array structure, and place baking oven to toast, remove and desolvate, form the polyester film that contains single-wall carbon nanotube array structure;
(3) growth substrate that will be covered with polyester film places the alkaline solution heating to make its little boiling, and breaks away from growth substrate and floats to polyester film;
(4) clean polyester film with ultrapure water, and it is affixed on the target substrate surface, dry up, place baking oven to toast once more with high pure nitrogen;
(5) target substrate of posting polyester film is removed polyester film through exposure, development, fixing, single-wall carbon nanotube array structure can be kept the control of original appearance transfer on the target substrate.
The present invention prepares single-wall carbon nanotube array structure on growth substrate method is surperficial vapour deposition process (CVD).Polymethylmethacrylate (polymethyl methacrylate, the mass percent of methyl-phenoxide PMMA) (methoxybenzene) solution can be 3% to 9%, and the rotating speed of the methyl-phenoxide solution of spin coating polymethylmethacrylate can be 1500 to be changeed minute
-1Change minute to 3000
-1Storing temperature can be 110 ℃ to 200 ℃, and storing time can be 15 minutes to 45 minutes.Peel off the used alkaline solution of polyester film and can be potassium hydroxide solution or sodium hydroxide solution, concentration can be 1molL
-1To 4molL
-1Removing the used exposure method of polyester film after the transfer is ultra violet lamp, irradiation time is 2 hours to 4 hours, developing solution is 4-methyl-2 pentanone (methylisobutyl ketone, MIBK) with Virahol (isopropyl alcohol, IPA) volume ratio is 1: 3 a solution, stop bath is that (isopropyl alcohol, IPA), development and fixing time are 1 minute to Virahol.
Advantage of the present invention:
Earlier in the substrate that is beneficial to growth, prepare single-wall carbon nanotube array structure, keep the control of original appearance to transfer in any substrate it then.Utilize the present invention, can shift the required single-wall carbon nanotube array structure of preparation by control, as decussate texture, pleated sheet structure etc.; Same array structure repeatedly can be controlled transfer, study its character and application on different base; And single-wall carbon nanotube array structure control can be transferred in the various substrates that have an electrode structure, make FET, LED, logic NOT or even based on electronic component SOG at the bottom of the organic radical (system on glass) etc., thereby provide strong technical support for the structure of extensive integrated Single Walled Carbon Nanotube electron device.
Description of drawings
Fig. 1 is the process flow sheet that single-wall carbon nanotube array structure is shifted in control.
Fig. 2 is that chemical Vapor deposition process (CVD) is at SiO
2The electromicroscopic photograph of the parallel single-wall carbon nanotube array structure of overlength of growth air-flow orientation on the/Si substrate surface, magnification is 400 times.
Fig. 3 is with SiO
2The parallel single-wall carbon nanotube array structure of the overlength of growing on/Si the substrate surface, another sheet SiO is transferred in control
2The electromicroscopic photograph that obtains behind/Si the substrate surface, magnification are 400 times.
Fig. 4 is with the parallel single-wall carbon nanotube array structure of the overlength of growing on the Si substrate surface, and the SiO that has the Pt electrode structure is transferred in control
2Behind/Si the substrate surface, the local electromicroscopic photograph of the Single Walled Carbon Nanotube that obtains on the Pt electrode, magnification is 40000 times.
Fig. 5 is grow on a of the Sapphire substrate crystal face electromicroscopic photograph of single-wall carbon nanotube array structure of crystal plane orientation of chemical Vapor deposition process (CVD), and magnification is 8000 times.
Fig. 6 is the single-wall carbon nanotube array structure of the crystal plane orientation of will grow on the Sapphire substrate a crystal face, and SiO is transferred in control
2The electromicroscopic photograph that obtains behind/Si the substrate surface, magnification are 10000 times.
Among the figure:
The used substrate of 1-single-wall carbon nanotube array structure 2-growing single-wall carbon nano tube array structure
3-target substrate 4-polymer P MMA film
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail.
(1) adopt chemical Vapor deposition process (CVD) at SiO
2The parallel single-wall carbon nanotube array structure of overlength of growth air-flow orientation on the/Si substrate surface, as shown in Figure 2;
(2) at the methyl-phenoxide solution of its surperficial spin coating one deck PMMA, and removed in 45 minutes in 110 ℃ of bakings and to desolvate, form the PMMA film;
(3) this is covered with the SiO of PMMA film
2/ Si substrate places 1molL
-1Heating makes its little boiling in the sodium hydroxide solution, breaks away from the surface to the PMMA film and floats;
(4) clean the PMMA film with ultrapure water, and it is affixed on another sheet SiO
2On/Si the substrate surface, dry up, in 110 ℃ of bakings 45 minutes with high pure nitrogen;
(5) surface is posted second SiO of PMMA film
2/ Si substrate places under the ultraviolet lamp shone 3 hours, and through developing, fixing is removed the PMMA film, can be with SiO again
2The parallel single-wall carbon nanotube array structure of the overlength of growing on/Si the substrate surface keeps the control of original appearance to transfer to another sheet SiO fully
2In/Si the substrate, as shown in Figure 3.
Embodiment 2
(1) adopts on the Si substrate surface, the grow parallel single-wall carbon nanotube array structure of overlength of air-flow orientation of chemical Vapor deposition process (CVD);
(2) at the methyl-phenoxide solution of its surperficial spin coating one deck PMMA, and removed in 40 minutes in 130 ℃ of bakings and to desolvate, form the PMMA film;
(3) the Si substrate that this is covered with the PMMA film places 2molL
-1Heating makes its little boiling in the sodium hydroxide solution, breaks away from the surface to the PMMA film and floats;
(4) clean the PMMA film with ultrapure water, and it is affixed on the SiO that has the Pt electrode structure
2In/Si the substrate, dry up, in 130 ℃ of bakings 40 minutes with high pure nitrogen;
(5) surface is posted the SiO that has the Pt electrode structure of PMMA film
2/ Si substrate places under the ultraviolet lamp shone 3 hours, and through developing, fixing is removed the PMMA film again, and the SiO that has the Pt electrode structure is transferred in the parallel single-wall carbon nanotube array structure control of overlength that can will be grown on the Si substrate surface
2In/Si the substrate, as shown in Figure 4.
(1) adopts on a of Sapphire substrate crystal face, the grow single-wall carbon nanotube array structure of crystal plane orientation of chemical Vapor deposition process (CVD), as shown in Figure 5;
(2) at the methyl-phenoxide solution of its surperficial spin coating one deck PMMA, and removed in 30 minutes in 170 ℃ of bakings and to desolvate, form the PMMA film;
(3) the Sapphire substrate that will scribble the PMMA film places 4molL
-1Heating makes its little boiling in the potassium hydroxide solution, breaks away from the surface to the PMMA film and floats;
(4) clean the PMMA film with ultrapure water, and it is affixed on SiO
2In/Si the substrate, dry up, in 170 ℃ of bakings 30 minutes with high pure nitrogen;
(5) surface is posted the SiO of PMMA film
2/ Si substrate places under the ultraviolet lamp shone 3 hours, and through developing, fixing is removed the PMMA film again, and the parallel single-wall carbon nanotube array structure that can will be grown on the Sapphire substrate a crystal face is transferred to SiO
2In/Si the substrate, as shown in Figure 6.
(1) adopts on the Si substrate surface, the grow parallel single-wall carbon nanotube array structure of overlength of air-flow orientation of chemical Vapor deposition process (CVD);
(2) at the toluene solution of its surperficial spin coating one deck PMMA, and removed in 35 minutes in 150 ℃ of bakings and to desolvate, form the PMMA film;
(3) the Si substrate that will scribble the PMMA film places 1molL
-1Heating makes its little boiling in the potassium hydroxide solution, breaks away from the surface to the PMMA film and floats;
(4) clean the PMMA film with ultrapure water, and it is affixed on the thick polyester film of 0.1mm (Mylar) surface, dry up, in 130 ℃ of bakings 30 minutes with high pure nitrogen;
(5) polyester film (Mylar) substrate of the surface being posted the PMMA film placed under the ultraviolet lamp irradiation 3 hours, again through developing, fixing is removed the PMMA film, the parallel single-wall carbon nanotube array structure control of the overlength of growing on the Si substrate surface can be transferred in polyester film (Mylar) substrate.
The present invention utilizes the control of PMMA polymeric film to shift single-wall carbon nanotube array structure, the single-wall carbon nanotube array structure for preparing on the growth substrate can be kept the control of original appearance transfer in the arbitrary target substrate, as SiO
2/ Si substrate, metal base, polyester film (Mylar) substrate, SrTiO
3Superconduction substrate etc.Have high success rate, easy to operate, characteristics such as suitability is wide.
In sum, the invention discloses a kind of method that shifts single-wall carbon nanotube array structure of controlling.Above-described application scenarios and embodiment are not to be used to limit the present invention, and any those skilled in the art without departing from the spirit and scope of the present invention, can do various changes and retouching, so protection scope of the present invention is looked the claim scope and defined.
Claims (9)
1, a kind of method that shifts single-wall carbon nanotube array structure of controlling, its step comprises:
(1) on growth substrate, prepares single-wall carbon nanotube array structure;
(2) at the methyl-phenoxide solution that is shaped on spin coating one deck polymethylmethacrylate on the growth substrate surface of single-wall carbon nanotube array structure, and place baking oven to toast, remove and desolvate, form the polyester film that contains single-wall carbon nanotube array structure;
(3) growth substrate that will be covered with polyester film places the alkaline solution heating to make its little boiling, and breaks away from growth substrate and floats to polyester film;
(4) clean polyester film with ultrapure water, and it is affixed on the target substrate surface, dry up, place baking oven to toast once more with high pure nitrogen;
(5) target substrate of posting polyester film is removed polyester film through exposure, development, fixing, single-wall carbon nanotube array structure can be kept the control of original appearance transfer on the target substrate.
2, the method for single-wall carbon nanotube array structure is shifted in control as claimed in claim 1, and it is characterized in that: the mass percent scope of the methyl-phenoxide solution of described polymethylmethacrylate is 3%---and 9%.
3, the method for single-wall carbon nanotube array structure is shifted in control as claimed in claim 1 or 2, and it is characterized in that: described alkaline solution is potassium hydroxide or sodium hydroxide solution, and its concentration is at 1molL
-1To 2molL
-1Between.
4, the method for single-wall carbon nanotube array structure is shifted in control as claimed in claim 1 or 2, and it is characterized in that: described storing temperature scope is 110 ℃ to 200 ℃, and storing time is between 15 minutes to 45 minutes.
5, the method for single-wall carbon nanotube array structure is shifted in control as claimed in claim 1 or 2, it is characterized in that: spin coating polyester liquid, the scope of spin coating rotating speed are 1500 to change minute
-1Change minute to 3000
-1
6, the method for single-wall carbon nanotube array structure is shifted in control as claimed in claim 1, and it is characterized in that: the described method for preparing single-wall carbon nanotube array structure is surperficial vapour deposition process.
7, the method for single-wall carbon nanotube array structure is shifted in control as claimed in claim 1, it is characterized in that: removing in the polyester film method of described step (5), adopt ultraviolet light irradiation exposure, irradiation time is between 2 hours to 4 hours.
8, shift the method for single-wall carbon nanotube array structures as claim 1 or 7 described controls, it is characterized in that: removing in the polyester film method of described step (5), adopting developing solution is that 4-methyl-2 pentanone and Virahol volume ratio are 1: 3 solution, and development time is 1 minute.
9, the method for single-wall carbon nanotube array structure is shifted in control as claimed in claim 8, and it is characterized in that: removing in the polyester film method of described step (5), the employing stop bath is a Virahol, and fixing time is 1 minute.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9067393B2 (en) | 2012-10-29 | 2015-06-30 | Industrial Technology Research Institute | Method of transferring carbon conductive film |
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| CN101734619B (en) * | 2009-12-16 | 2013-03-20 | 北京大学 | Method for preparing material with highly gradient surface micronano structure |
| FI125151B (en) * | 2010-03-05 | 2015-06-15 | Canatu Oy | Process for making a conformal element |
| CN102294852B (en) * | 2010-06-24 | 2014-07-16 | 鸿富锦精密工业（深圳）有限公司 | Nano wire film and manufacturing method thereof |
| CN102372254A (en) * | 2010-08-06 | 2012-03-14 | 鸿富锦精密工业（深圳）有限公司 | Method for transfer printing nano wire |
| CN102731949B (en) * | 2012-05-29 | 2014-07-09 | 复旦大学 | Highly oriented carbon nano-tube/polymer composite film, and preparation method and application thereof |
| CN104876181B (en) * | 2014-02-28 | 2017-04-26 | 清华大学 | Nano-structure transfer method |
| CN104876177B (en) * | 2014-02-28 | 2016-10-19 | 清华大学 | The transfer method of nanostructured |
| CN105329842B (en) * | 2014-06-18 | 2017-06-06 | 清华大学 | The transfer method of carbon nano pipe array and the preparation method of carbon nano tube structure |
| CN105439117A (en) * | 2014-09-19 | 2016-03-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | Rapid losses transfer method for large-area carbon nanotube vertical array |
| CN111115615B (en) * | 2018-11-01 | 2021-08-31 | 清华大学 | Transfer method of carbon nano tube array |
| CN115615965B (en) * | 2022-11-17 | 2023-04-14 | 中国工程物理研究院材料研究所 | Hydrogen sensor, preparation method thereof and method for detecting hydrogen concentration |
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| CN1388058A (en) * | 2002-04-12 | 2003-01-01 | 上海交通大学 | Control method of arranging carbon nanotube orientationally on the surface of substrate |
Non-Patent Citations (2)
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|---|
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9067393B2 (en) | 2012-10-29 | 2015-06-30 | Industrial Technology Research Institute | Method of transferring carbon conductive film |
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