A kind of power inverter common mode disturbances inhibition method
Technical field
The present invention relates to the common mode electromagnetic interference (EMI) inhibition method of power inverter.
Background technology
The source of the power inverter conduction common mode electromagnetic interference electrical nodes that mainly current potential acutely changes in time in the circuit produces displacement current and flows through earth-return and causes in its distributed capacitance over the ground.
Usually, the drain electrode of metal-oxide-semiconductor field effect t (MOSFET) is fixed on the external radiator by insulation spacer through its heat radiating metal shell, radiator ground connection, and therefore, there is a big distributed capacitance over the ground in the drain electrode of MOSFET.In like manner, for common diode, the heat radiating metal shell of its encapsulation links to each other with diode cathode, is fixed on the external radiator by insulation spacer equally, promptly forms diode cathode distributed capacitance over the ground.In addition, also there is over the ground distributed capacitance in lead in the circuit.
In sort circuit, the node potential that links to each other with the drain electrode of MOSFET is acute variation with the change of the on off operating mode of MOSFET, and promptly du/dt is very big.The distributed capacitance over the ground of MOSFET and the distributed capacitance over the ground that is attached thereto lead can produce a big displacement current, by loop, radiator inflow place, form the common mode disturbances electric current.
Usually, the distributed capacitance that lead produces can reduce by the reasonable line arrangement of printed circuit board (PCB), but but can't reduce the to the ground distributed capacitance of the drain electrode of MOSFET.
In order to suppress the common mode disturbances in the sort circuit, many scholars have proposed certain methods, as: the method for the anti-phase counteracting of common mode current, this need increase an additional winding and a MOSFET, has increased cost; The method of the passive elimination of common mode current, this still needs an additional winding and an additional capacitor; The method of dynamic node balance, this is difficult to be applied to boosting power factor and proofreaies and correct (Boost PFC) circuit, has increased circuit again
In dynamic node, increased the difficulty of printed circuit board wiring.
Summary of the invention
The objective of the invention is by structure stable state node in circuit, reduce the drain influence of to the ground branch electric capacity of MOSFET, promptly provide a kind of node potential stable, distributed capacitance is to the little power inverter common mode disturbances inhibition method of common mode disturbances influence.
The objective of the invention is to realize: constitute by the current rectifying and wave filtering circuit and the Boost circuit that boosts by following proposal, in the described Boost of boosting circuit be with inductance by the drain node of current rectifying and wave filtering circuit positive output node and power field effect pipe between reconfiguration to the drain node of direct-connected current rectifying and wave filtering circuit negative output node and power field effect pipe in primary circuit, the drain node of current rectifying and wave filtering circuit positive output node and power field effect pipe directly is connected, change its diode commonly used into co-anode diode that its heat radiating metal shell links to each other with anode, and with it by reconfiguration between drain node that is connected on power field effect pipe and the storage capacitor cathode node to direct-connected power field effect pipe source node in primary circuit and the storage capacitor negative pole node, the power field effect pipe drain node directly is connected with the storage capacitor cathode node.
The present invention removes owing to inductance on the current rectifying and wave filtering circuit positive output end being connected on the current rectifying and wave filtering circuit negative output terminal and with the diode between power field effect pipe drain electrode and the storage capacitor positive pole, adopt co-anode diode to be connected between power field effect pipe source electrode and the storage capacitor negative pole, and on the positive bus-bar that direct current input and direct current are exported no any components and parts, therefore the lead node potential is stable, and node distribution electric capacity is very little to the common mode disturbances influence on to the ground distributed capacitance of the drain electrode of MOSFET and the current rectifying and wave filtering circuit positive output end line.Again because output dc voltage is stable when normal operating conditions, so co-anode diode anode distributed capacitance and current rectifying and wave filtering circuit negative output end line dc output end branch electric capacity over the ground over the ground can be ignored the influence of common mode disturbances.At this moment, when switch mosfet moves, the node that only has inductance to be connected with the co-anode diode negative electrode in circuit has the high potential rate of change, this node distributed capacitance over the ground can become the principal element that influences common mode disturbances, but, can be easy to reduce this node distributed capacitance over the ground by the reasonable line arrangement of printed circuit board (PCB).And have simple and practically, and can be applied in more existing power inverter topologys, proofread and correct (Boost PFC) circuit, step-down (Buck) circuit, lifting (Buck-Boost) circuit etc. as boosting power factor.
Description of drawings
Fig. 1 is circuit theory diagrams of the present invention;
Fig. 2 is the prior art reference diagram.
Embodiment
With reference to Fig. 1, the present invention is made of the current rectifying and wave filtering circuit and the Boost circuit that boosts.Current rectifying and wave filtering circuit is formed bridge rectifier and capacitor C by 4 diodes
1Formation in parallel has the current rectifying and wave filtering circuit of connection positive output end node n5, current rectifying and wave filtering circuit negative output terminal node n6 in circuit.Boost the Boost circuit by metal-oxide-semiconductor field effect t (MOSFET) Q, radiator T, inductance L, co-anode diode D and storage capacitor C
2Constitute.MOSFET has the drain node of connection n1, source node n2 in circuit, its drain electrode d is connected with drain node n1, and there is a big distributed capacitance C over the ground in its drain electrode d
mInductance L is connected between current rectifying and wave filtering circuit negative output terminal node n6 and the source node n2.Storage capacitor C
2The cathode node of connection n3, negative pole node n4 are arranged in circuit.Co-anode diode D is connected between MOSFET source node n2 and the storage capacitor C2 negative pole node n4.The heat radiating metal shell of MOSFET and co-anode diode D is fixed on the radiating tube T by insulation spacer respectively.At this moment positive anode diode D is to the distributed capacitance C of radiating tube T
dBe actually diode anode distributed capacitance over the ground.C in the circuit
P1, C
P2, C
P3And C
P4It is respectively the lead distributed capacitance over the ground that links to each other with drain node n1, source node n2, storage capacitor C2 cathode node n3, the negative pole node n4 of power field effect pipe Q.This shows that power field effect pipe Q drain node n1, storage capacitor C2 cathode node n3 directly link to each other, so its current potential is stable, distributed capacitance C
m, C
P1And C
P3Very little to the common mode disturbances influence.Simultaneously, output dc voltage is stable when the circuit operate as normal, so storage capacitor C2 negative pole node n4 current potential also is stable, and distributed capacitance C
dAnd C
P4Influence to common mode disturbances can be ignored.At this moment, when the metal-oxide-semiconductor field effect t Q switching moves, only there is power field effect pipe Q source node n2 current potential that high du/dt, capacitor C are arranged in the circuit
P2Become the principal element that influences common mode disturbances, this can be easy to reduce this electric capacity by the reasonable line arrangement of printed circuit board (PCB), thereby has reached the purpose that suppresses common mode disturbances in the circuit.